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Sanghyun Ju, Ph.D. - Publications

Affiliations: 
2007 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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78 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kang Y, Ju S. Control of the threshold voltage of polyvinylpyrrolidone-coated SnO2 nanowire transistor using xenon flash light irradiation Aip Advances. 10: 25304. DOI: 10.1063/1.5139668  0.427
2019 Lim T, Kim Y, Jeong SM, Kim CH, Kim SM, Park SY, Yoon MH, Ju S. Human sweat monitoring using polymer-based fiber. Scientific Reports. 9: 17294. PMID 31754149 DOI: 10.1038/S41598-019-53677-2  0.538
2019 Choi YS, Yeo CS, Kim SJ, Lee JY, Kim Y, Cho KR, Ju S, Hong BH, Park SY. Multifunctional reduced graphene oxide-CVD graphene core-shell fibers. Nanoscale. PMID 31237267 DOI: 10.1039/C8Nr07527A  0.321
2018 Lim T, Kang Y, Ju S. Detection of chemicals in water using an oxide nanowire transistor covered with an aerogel microsphere thin film as a liquid-vapor separation filter Journal of the Korean Physical Society. 72: 144-150. DOI: 10.3938/Jkps.72.144  0.33
2018 Kang Y, Ju S. Graphene-filter-mounted tin-oxide-nanowire-transistor for chemical sensor Semiconductor Science and Technology. 33: 125013. DOI: 10.1088/1361-6641/Aae96A  0.33
2018 Kim Y, Lim T, Kim C, Yeo CS, Seo K, Kim S, Kim J, Park SY, Ju S, Yoon M. Organic electrochemical transistor-based channel dimension-independent single-strand wearable sweat sensors Npg Asia Materials. 10: 1086-1095. DOI: 10.1038/S41427-018-0097-3  0.43
2017 Kim HJ, Lee S, Sinh LH, Yeo CS, Son YR, Cho KR, Song Y, Ju S, Shin MK, Park S, Park S. Maximizing volumetric energy density of all-graphene-oxide-supercapacitors and their potential applications for energy harvest Journal of Power Sources. 346: 113-119. DOI: 10.1016/J.Jpowsour.2017.02.040  0.337
2017 Lim T, Ju S. Control of positive and negative threshold voltage shifts using ultraviolet and ultraviolet-ozone irradiation Current Applied Physics. 17: 262-266. DOI: 10.1016/J.Cap.2016.12.003  0.376
2016 Lee J, Han J, Yeo CS, Lim T, Park S, Ju S. Observation of a water droplet motion by using an oxide nanowire transistor covered by a nanofiber mesh. Nanotechnology. 27: 505203. PMID 27841161 DOI: 10.1088/0957-4484/27/50/505203  0.36
2016 Lim T, Lee J, Kim J, Seo S, Ju S. Detection of chlorobenzene in water using a wettability-controlled three-dimensional graphene selective filter Applied Physics Express. 10: 015101. DOI: 10.7567/Apex.10.015101  0.316
2016 Lim T, Lee J, Ju S. Detection of chemical substances in water using an oxide nanowire transistor covered with a hydrophobic nanoparticle thin film as a liquid-vapour separation filter Apl Materials. 4: 086110. DOI: 10.1063/1.4961512  0.322
2016 Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062  0.434
2016 Han J, Lee J, Ju S. Fabrication of flexible ultraviolet photodetectors using an all-spray-coating process Aip Advances. 6: 045218. DOI: 10.1063/1.4948460  0.399
2016 Lim T, Lee J, Lee J, Ju S. Detection of chemicals in water using a three-dimensional graphene porous structure as liquid-vapor separation filter Nano Research. 10: 971-979. DOI: 10.1007/S12274-016-1356-7  0.33
2015 Park JH, Lim T, Baik J, Seo K, Moon Y, Park N, Shin HJ, Kyu Kwak S, Ju S, Real Ahn J. Seamless lamination of a concave-convex architecture with single-layer graphene. Nanoscale. 7: 18138-46. PMID 26477976 DOI: 10.1039/C5Nr04004C  0.346
2015 Lim T, Bong J, Mills EM, Kim S, Ju S. Highly Stable Operation of Metal Oxide Nanowire Transistors in Ambient Humidity, Water, Blood, and Oxygen. Acs Applied Materials & Interfaces. 7: 16296-302. PMID 26200320 DOI: 10.1021/Acsami.5B03038  0.417
2015 Lim T, Han J, Seo K, Joo MK, Kim JS, Kim WY, Kim GT, Ju S. Fabrication of controllable and stable In₂O₃ nanowire transistors using an octadecylphosphonic acid self-assembled monolayer. Nanotechnology. 26: 145203. PMID 25771996 DOI: 10.1088/0957-4484/26/14/145203  0.483
2015 Seo K, Bong J, Kim J, Song Y, Shin YH, Kim Y, Ju S. Substrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires Journal of Nanomaterials. 2015: 1-6. DOI: 10.1155/2015/201420  0.396
2015 Lim T, Kim CS, Song M, Ryu SY, Ju S. Organic solar cells with surface-treated graphene thin film as interfacial layer Synthetic Metals. 205: 1-5. DOI: 10.1016/J.Synthmet.2015.03.025  0.365
2015 Lee J, Bong J, Ha Y, Park S, Ju S. Durability of self-assembled monolayers on aluminum oxide surface for determining surface wettability Applied Surface Science. 330: 445-448. DOI: 10.1016/J.Apsusc.2015.01.043  0.308
2014 Seo JT, Han J, Lim T, Lee KH, Hwang J, Yang H, Ju S. Fully transparent quantum dot light-emitting diode integrated with graphene anode and cathode. Acs Nano. 8: 12476-82. PMID 25426762 DOI: 10.1021/Nn505316Q  0.332
2014 Jin B, Lim T, Ju S, Latypov MI, Kim HS, Meyyappan M, Lee JS. Ga-doped indium oxide nanowire phase change random access memory cells. Nanotechnology. 25: 055205. PMID 24406901 DOI: 10.1088/0957-4484/25/5/055205  0.319
2014 Seo K, Kim D, Ju S, Jung MW, An KS. Semiconducting channel self-imposed in metallic graphene using an oxygen ion reaction Journal of the Korean Physical Society. 64: 283-288. DOI: 10.3938/Jkps.64.283  0.346
2014 Seo J, Bong J, Cha J, Lim T, Son J, Park SH, Hwang J, Hong S, Ju S. Manipulation of graphene work function using a self-assembled monolayer Journal of Applied Physics. 116: 084312. DOI: 10.1063/1.4894392  0.306
2014 Han J, Lim T, Bong J, Seo K, Kim S, Ju S. Nanowire-based ternary transistor by threshold-voltage manipulation Applied Physics Letters. 104: 143509. DOI: 10.1063/1.4871413  0.421
2013 Kim S, Kim H, Janes DB, Ju S. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements. Nanotechnology. 24: 305201. PMID 23807306 DOI: 10.1088/0957-4484/24/30/305201  0.737
2013 Bong J, Han J, Lee J, Kim S, Ju S. Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes Applied Physics Express. 6: 055103. DOI: 10.7567/Apex.6.055103  0.613
2013 Lim T, Kim D, Ju S. Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment Applied Physics Letters. 103: 013107. DOI: 10.1063/1.4813016  0.371
2013 Song W, Kim Y, Hwan Kim S, Youn Kim S, Cha M, Song I, Sung Jung D, Jeon C, Lim T, Lee S, Ju S, Chel Choi W, Wook Jung M, An K, Park C. Homogeneous and stable p-type doping of graphene by MeV electron beam-stimulated hybridization with ZnO thin films Applied Physics Letters. 102: 053103. DOI: 10.1063/1.4790161  0.317
2013 Lee S, Kim S, Janes DB, Meyyappan M, Ju S. Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications Aip Advances. 3. DOI: 10.1063/1.4789405  0.719
2013 Seo K, Suh M, Ju S. Control of oxygen vacancy concentration in ZnO nanowires containing sulfur as a reducing agent Electronic Materials Letters. 9: 273-277. DOI: 10.1007/S13391-013-2176-5  0.393
2012 Lim T, Ryu SY, Ju S. Direct growth of SnO2 nanowires on WOx thin films. Nanotechnology. 23: 485702. PMID 23123512 DOI: 10.1088/0957-4484/23/48/485702  0.405
2012 Seo K, Kim S, Janes DB, Jung MW, An KS, Ju S. Effect of nitrogen plasma on the surface of indium oxide nanowires. Nanotechnology. 23: 435201. PMID 23060605 DOI: 10.1088/0957-4484/23/43/435201  0.71
2012 Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors. Acs Nano. 6: 7352-61. PMID 22775468 DOI: 10.1021/Nn302484C  0.679
2012 Lim T, Kim H, Meyyappan M, Ju S. Photostable Zn2SnO4 nanowire transistors for transparent displays. Acs Nano. 6: 4912-20. PMID 22578094 DOI: 10.1021/Nn300401W  0.468
2012 Kim H, Lee BK, An KS, Ju S. Direct growth of oxide nanowires on CuOx thin film. Nanotechnology. 23: 045604. PMID 22214566 DOI: 10.1088/0957-4484/23/4/045604  0.359
2012 Kim S, Ju S. Threshold voltage control for SnO 2 nanowire transistors by gas treatment Journal of the Korean Physical Society. 61: 1287-1291. DOI: 10.3938/Jkps.61.1287  0.386
2012 Kim H, Kwag P, Lee S, Kwon O, Ju S. Metallic, Linear, and Saturated Output Characteristics of Oxide Nanowire Transistors Ieee Transactions On Nanotechnology. 11: 386-389. DOI: 10.1109/Tnano.2011.2175404  0.465
2012 Ahn S, Kang J, In H, Ju S, Kwon O. A Low-Output-Noise Multistage Shift Register Using Tin Dioxide Nanowire Transistors Ieee Electron Device Letters. 33: 1411-1413. DOI: 10.1109/Led.2012.2207702  0.391
2012 Lim T, Lee S, Meyyappan M, Ju S. Tin oxide and indium oxide nanowire transport characteristics: influence of oxygen concentration during synthesis Semiconductor Science and Technology. 27: 035018. DOI: 10.1088/0268-1242/27/3/035018  0.408
2012 Kim S, Janes DB, Choi SY, Ju S. Nanoscale contacts between semiconducting nanowires and metallic graphenes Applied Physics Letters. 101. DOI: 10.1063/1.4745210  0.7
2012 Kim H, Park J, Suh M, Real Ahn J, Ju S. Horizontally aligned ZnO nanowire transistors using patterned graphene thin films Applied Physics Letters. 100: 063112. DOI: 10.1063/1.3684614  0.458
2011 Lim T, Kim S, Ju S. Controlled growth of related defects on oxide nanowires. Journal of Nanoscience and Nanotechnology. 11: 7022-6. PMID 22103116 DOI: 10.1166/Jnn.2011.4222  0.34
2011 Lim T, Ahn SJ, Suh M, Kwon OK, Meyyappan M, Ju S. A nanowire-based shift register for display scan drivers. Nanotechnology. 22: 405203. PMID 21896980 DOI: 10.1088/0957-4484/22/40/405203  0.416
2011 Kim S, Lim T, Ju S. Fabrication of reliable semiconductor nanowires by controlling crystalline structure. Nanotechnology. 22: 305704. PMID 21709348 DOI: 10.1088/0957-4484/22/30/305704  0.392
2011 Lim T, Lee S, Meyyappan M, Ju S. Control of semiconducting and metallic indium oxide nanowires. Acs Nano. 5: 3917-22. PMID 21504171 DOI: 10.1021/Nn200390D  0.402
2011 Lee C, Srisungsitthisunti P, Park S, Kim S, Xu X, Roy K, Janes DB, Zhou C, Ju S, Qi M. Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing. Acs Nano. 5: 1095-101. PMID 21222453 DOI: 10.1021/Nn102723W  0.739
2011 Kim H, Kwag P, Lee S, Kwon O, Ju S. Nanowire Transistor Behavior Under AC Drives Ieee Transactions On Nanotechnology. 10: 1449-1453. DOI: 10.1109/Tnano.2011.2169083  0.438
2011 Park J, Baik H, Lim T, Ju S. Response to “Comment on ‘Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment’” [Appl. Phys. Lett. 98, 176101 (2011)] Applied Physics Letters. 98: 176102. DOI: 10.1063/1.3584002  0.357
2011 Kim H, Choi H, Choi S, Ju S. Aligned Circular-Type Nanowire Transistors Grown on Multilayer Graphene Film The Journal of Physical Chemistry C. 115: 22163-22167. DOI: 10.1021/Jp2052008  0.479
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J  0.741
2011 Jung M, Kim S, Ju S. Enhancement of green emission from Sn-doped ZnO nanowires Optical Materials. 33: 280-283. DOI: 10.1016/J.Optmat.2010.08.029  0.33
2011 Lee S, Shin Y, Kim Y, Kim S, Ju S. Emission characteristics of diameter controlled SnO2 nanowires Journal of Luminescence. 131: 2565-2568. DOI: 10.1016/J.Jlumin.2011.05.054  0.334
2010 Kim S, Choi H, Jung M, Choi SY, Ju S. Hybrid nanowire-multilayer graphene film light-emitting sources. Nanotechnology. 21: 425203. PMID 20858932 DOI: 10.1088/0957-4484/21/42/425203  0.419
2010 Seo K, Lim T, Kim S, Park HL, Ju S. Tunable-white-light-emitting nanowire sources. Nanotechnology. 21: 255201. PMID 20516577 DOI: 10.1088/0957-4484/21/25/255201  0.335
2010 Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/Nn1006094  0.62
2010 Kim S, Delker C, Chen P, Zhou C, Ju S, Janes DB. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology. 21: 145207. PMID 20234086 DOI: 10.1088/0957-4484/21/14/145207  0.782
2010 Park J, Baik H, Lim T, Ju S. Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment Applied Physics Letters. 97: 203508. DOI: 10.1063/1.3518485  0.462
2010 Kim S, Lim T, Jung M, Kong K, An K, Ju S. Bright blue emission from Te-doped ZnS nanowires Journal of Luminescence. 130: 2153-2156. DOI: 10.1016/J.Jlumin.2010.06.010  0.342
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032  0.677
2009 Kim S, Lee C, Srisungsitthisunti P, Chen P, Zhou C, Xu X, Qi M, Mohammadi S, Ju S, Janes DB. Femtosecond laser annealing effects on indium oxide nanowire transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378138  0.655
2009 Kim S, Xu M, Yu L, Ye PD, Janes DB, Ju S, Mohammadi S. Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2009.5354867  0.646
2008 Ju S, Li J, Liu J, Chen PC, Ha YG, Ishikawa F, Chang H, Zhou C, Facchetti A, Janes DB, Marks TJ. Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry. Nano Letters. 8: 997-1004. PMID 18069874 DOI: 10.1021/Nl072538+  0.624
2008 Yu B, Sun X, Ju S, Janes DB, Meyyappan M. Chalcogenide-nanowire-based phase change memory Ieee Transactions On Nanotechnology. 7: 496-502. DOI: 10.1109/Tnano.2008.926374  0.367
2008 Sun X, Yu B, Ng G, Meyyappan M, Ju S, Janes DB. Germanium antimonide phase-change nanowires for memory applications Ieee Transactions On Electron Devices. 55: 3131-3135. DOI: 10.1109/Ted.2008.2005160  0.602
2008 Ju S, Chen P, Zhou C, Ha YG, Facchetti A, Marks TJ, Kim SK, Mohammadi S, Janes DB. 1f noise of SnO2 nanowire transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947586  0.638
2008 Ju S, Ishikawa F, Chen P, Chang H, Zhou C, Ha Y, Liu J, Facchetti A, Marks TJ, Janes DB. High performance In2O3 nanowire transistors using organic gate nanodielectrics Applied Physics Letters. 92: 222105. DOI: 10.1063/1.2937111  0.494
2008 Ju S, Kim S, Mohammadi S, Janes DB, Ha YG, Facchetti A, Marks TJ. Interface studies of ZnO nanowire transistors using low-frequency noise and temperature-dependent I-V measurements Applied Physics Letters. 92. DOI: 10.1063/1.2830005  0.678
2007 Ju S, Facchetti A, Xuan Y, Liu J, Ishikawa F, Ye P, Zhou C, Marks TJ, Janes DB. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics. Nature Nanotechnology. 2: 378-84. PMID 18654311 DOI: 10.1038/Nnano.2007.151  0.652
2007 Ju S, Mills AK, Hang Q, Elliott DS, Janes DB. Negative resist behavior of neutral sodium atoms deposited on self-assembled monolayers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25. DOI: 10.1116/1.2431351  0.541
2007 Ju S, Li J, Pimparkar N, Alam MA, Chang RPH, Janes DB. N-type field-effect transistors using multiple Mg-doped ZnO nanorods Ieee Transactions On Nanotechnology. 6: 390-394. DOI: 10.1109/Tnano.2007.893148  0.441
2007 Ju S, Lu G, Chen PC, Facchetti A, Zhou C, Marks TJ, Janes DB. High performance in2O3 nanowire transistors using organic gate nanodielectrics 65th Drc Device Research Conference. 169-170. DOI: 10.1109/DRC.2007.4373702  0.585
2007 Ju S, Lee K, Yoon MH, Facchetti A, Marks TJ, Janes DB. High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: Effects of metal contacts and ozone treatment Nanotechnology. 18. DOI: 10.1088/0957-4484/18/15/155201  0.793
2007 Yu B, Ju S, Sun X, Ng G, Nguyen TD, Meyyappan M, Janes DB. Indium selenide nanowire phase-change memory Applied Physics Letters. 91. DOI: 10.1063/1.2793505  0.596
2006 Ju S, Janes DB, Lu G, Facchetti A, Marks TJ. Effects of bias stress on ZnO nanowire field-effect transistors fabricated with organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2378445  0.615
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon M, Facchetti A, Marks TJ. Erratum: “Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics” [Appl. Phys. Lett. 89, 073510 (2006)] Applied Physics Letters. 89: 139902. DOI: 10.1063/1.2356893  0.748
2006 Ju S, Lee K, Janes DB, Dwivedi RC, Baffour-Awuah H, Wilkins R, Yoon MH, Facchetti A, Mark TJ. Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics Applied Physics Letters. 89. DOI: 10.1063/1.2336744  0.775
2005 Ju S, Lee K, Janes DB, Yoon MH, Facchetti A, Marks TJ. Low operating voltage single ZnO nanowire field-effect transistors enabled by self-assembled organic gate nanodielectrics. Nano Letters. 5: 2281-6. PMID 16277468 DOI: 10.1021/Nl051658J  0.795
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