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W Timothy Holman - Publications

Affiliations: 
Electrical Engineering Vanderbilt University, Nashville, TN 
Area:
Electronics and Electrical Engineering
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50 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Nsengiyumva P, Massengill LW, Kauppila JS, Maharrey JA, Harrington RC, Haeffner TD, Ball DR, Alles ML, Bhuva BL, Holman WT, Zhang EX, Rowe JD, Sternberg AL. Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies Ieee Transactions On Nuclear Science. 65: 223-230. DOI: 10.1109/Tns.2017.2775234  0.403
2017 Nsengiyumva P, Massengill LW, Alles ML, Bhuva BL, Ball DR, Kauppila JS, Haeffner TD, Holman WT, Reed RA. Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections Ieee Transactions On Nuclear Science. 64: 441-448. DOI: 10.1109/Tns.2016.2620940  0.428
2016 Nsengiyumva P, Ball DR, Kauppila JS, Tam N, McCurdy M, Holman WT, Alles ML, Bhuva BL, Massengill LW. A Comparison of the SEU Response of Planar and FinFET D Flip-Flops at Advanced Technology Nodes Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2508981  0.413
2016 Holman WT, Bhuva BL, Kauppila JS, Witulski AF, Massengill LW, Alles ML. Advanced node-splitting techniques for radiation-hardened analog/mixed-signal circuits Ieee Aerospace Conference Proceedings. 2016. DOI: 10.1109/AERO.2016.7500698  0.423
2015 Shetler KJ, Atkinson NM, Holman WT, Kauppila JS, Loveless TD, Witulski AF, Bhuva BL, Zhang EX, Massengill LW. Radiation Hardening of Voltage References Using Chopper Stabilization Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2499171  0.703
2013 Maharrey JA, Quinn RC, Loveless TD, Kauppila JS, Jagannathan S, Atkinson NM, Gaspard NJ, Zhang EX, Alles ML, Bhuva BL, Holman WT, Massengill LW. Effect of device variants in 32 nm and 45 nm SOI on SET pulse distributions Ieee Transactions On Nuclear Science. 60: 4399-4404. DOI: 10.1109/Tns.2013.2288572  0.748
2013 Maillard P, Holman WT, Loveless TD, Massengill LW. A new error correction circuit for delay locked loops Ieee Transactions On Nuclear Science. 60: 4387-4393. DOI: 10.1109/Tns.2013.2288103  0.452
2013 Atkinson NM, Holman WT, Kauppila JS, Loveless TD, Hooten NC, Witulski AF, Bhuva BL, Massengill LW, Zhang EX, Warner JH. The quad-path hardening technique for switched-capacitor circuits Ieee Transactions On Nuclear Science. 60: 4356-4361. DOI: 10.1109/Tns.2013.2282312  0.766
2013 Atkinson NM, Blaine RW, Kauppila JS, Armstrong SE, Loveless TD, Hooten NC, Holman WT, Massengill LM, Warner JH. RHBD technique for single-event charge cancellation in folded-cascode amplifiers Ieee Transactions On Nuclear Science. 60: 2756-2761. DOI: 10.1109/Tns.2013.2240316  0.765
2012 Blaine RW, Atkinson NM, Kauppila JS, Armstrong SE, Hooten NC, Loveless TD, Warner JH, Holman WT, Massengill LW. Differential charge cancellation (DCC) layout as an rhbd technique for bulk CMOS differential circuit design Ieee Transactions On Nuclear Science. 59: 2867-2871. DOI: 10.1109/Tns.2012.2222441  0.769
2012 Loveless TD, Kauppila JS, Jagannathan S, Ball DR, Rowe JD, Gaspard NJ, Atkinson NM, Blaine RW, Reece TR, Ahlbin JR, Haeffner TD, Alles ML, Holman WT, Bhuva BL, Massengill LW. On-chip measurement of single-event transients in a 45 nm silicon-on-insulator technology Ieee Transactions On Nuclear Science. 59: 2748-2755. DOI: 10.1109/Tns.2012.2218257  0.758
2012 Blaine RW, Atkinson NM, Kauppila JS, Loveless TD, Armstrong SE, Holman WT, Massengill LW. Single-event-hardened CMOS operational amplifier design Ieee Transactions On Nuclear Science. 59: 803-810. DOI: 10.1109/TNS.2012.2200502  0.762
2012 Armstrong SE, Blaine RW, Holman WT, Massengill LW. Single-event analysis and hardening of mixed-signal circuit interfaces in high-speed communications devices Ieee Transactions On Nuclear Science. 59: 1027-1033. DOI: 10.1109/Tns.2012.2194166  0.798
2011 Kauppila AV, Bhuva BL, Massengill LW, Holman WT, Ball DR. Impact of process variations and charge sharing on the single-event-upset response of flip-flops Ieee Transactions On Nuclear Science. 58: 2658-2663. DOI: 10.1109/Tns.2011.2172691  0.387
2011 Gaspard NJ, Witulski AF, Atkinson NM, Ahlbin JR, Holman WT, Bhuva BL, Loveless TD, Massengill LW. Impact of well structure on single-event well potential modulation in bulk CMOS Ieee Transactions On Nuclear Science. 58: 2614-2620. DOI: 10.1109/Tns.2011.2171366  0.757
2011 Blaine RW, Armstrong SE, Kauppila JS, Atkinson NM, Olson BD, Holman WT, Massengill LW. RHBD bias circuits utilizing sensitive node active charge cancellation Ieee Transactions On Nuclear Science. 58: 3060-3066. DOI: 10.1109/Tns.2011.2171365  0.778
2011 Atkinson NM, Ahlbin JR, Witulski AF, Gaspard NJ, Holman WT, Bhuva BL, Zhang EX, Chen L, Massengill LW. Effect of transistor density and charge sharing on single-event transients in 90-nm bulk CMOS Ieee Transactions On Nuclear Science. 58: 2578-2584. DOI: 10.1109/Tns.2011.2168425  0.763
2011 Armstrong SE, Loveless TD, Hicks JR, Holman WT, McMorrow D, Massengill LW. Phase-dependent single-event sensitivity analysis of high-speed A/MS circuits extracted from asynchronous measurements Ieee Transactions On Nuclear Science. 58: 1066-1071. DOI: 10.1109/Tns.2011.2125989  0.32
2011 Atkinson NM, Witulski AF, Holman WT, Ahlbin JR, Bhuva BL, Massengill LW. Layout technique for single-event transient mitigation via pulse quenching Ieee Transactions On Nuclear Science. 58: 885-890. DOI: 10.1109/Tns.2010.2097278  0.758
2011 Ahlbin JR, Gadlage MJ, Atkinson NM, Narasimham B, Bhuva BL, Witulski AF, Holman WT, Eaton PH, Massengill LW. Effect of multiple-transistor charge collection on single-event transient pulse widths Ieee Transactions On Device and Materials Reliability. 11: 401-406. DOI: 10.1109/Tdmr.2011.2157506  0.779
2011 Maillard P, Holman WT, Loveless TD, Massengill LW. A radiation-hardened Delay-Locked Loop (DLL) utilizing a differential delay line topology Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 675-682. DOI: 10.1109/RADECS.2011.6131446  0.355
2011 Gaspard NJ, Ahlbin JR, Gouker PM, Atkinson NM, Gadlage MJ, Witulski AF, Holman WT, Bhuva BL, Zhang EX, Massengill LW. Characterization of single-event transients of body-tied vs. floating-body circuits in 150 nm 3D SOI Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 252-255. DOI: 10.1109/RADECS.2011.6131403  0.734
2011 Armstrong SE, Blaine RW, Holman WT, Massengill LW. Single-event vulnerability of mixed-signal circuit interfaces Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 485-488. DOI: 10.1109/RADECS.2011.6131356  0.804
2011 Blaine RW, Atkinson NM, Kauppila JS, Armstrong SE, Holman WT, Massengill LW. A single-event-hardened CMOS operational amplifier design Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 123-127. DOI: 10.1109/RADECS.2011.6131296  0.762
2010 Maillard P, Holman WT, Loveless TD, Bhuva BL, Massengill LW. An RHBD technique to mitigate missing pulses in delay locked loops Ieee Transactions On Nuclear Science. 57: 3634-3639. DOI: 10.1109/Tns.2010.2087357  0.362
2010 Armstrong SE, Olson BD, Holman WT, Warner J, McMorrow D, Massengill LW. Demonstration of a differential layout solution for improved ASET tolerance in CMOS A/MS circuits Ieee Transactions On Nuclear Science. 57: 3615-3619. DOI: 10.1109/Tns.2010.2080320  0.402
2010 Loveless TD, Massengill LW, Holman WT, Bhuva BL, McMorrow D, Warner JH. A generalized linear model for single event transient propagation in phase-locked loops Ieee Transactions On Nuclear Science. 57: 2933-2947. DOI: 10.1109/Tns.2010.2066287  0.345
2010 Adell PC, Witulski AF, Schrimpf RD, Baronti F, Holman WT, Galloway KF. Digital control for radiation-hardened switching converters in space Ieee Transactions On Aerospace and Electronic Systems. 46: 761-770. DOI: 10.1109/Taes.2010.5461655  0.338
2010 Ahlbin JR, Gadlage MJ, Atkinson NM, Bhuva BL, Witulski AF, Holman WT, Massengill LW, Eaton PH, Narasimham B. Effect of multiple-transistor charge collection on SET pulse widths Ieee International Reliability Physics Symposium Proceedings. 198-202. DOI: 10.1109/IRPS.2010.5488828  0.748
2009 Narasimham B, Gadlage MJ, Bhuva BL, Schrimpf RD, Massengill LW, Holman WT, Witulski AF, Galloway KF. Test circuit for measuring pulse widths of single-event transients causing soft errors Ieee Transactions On Semiconductor Manufacturing. 22: 119-125. DOI: 10.1109/Tsm.2008.2010742  0.37
2009 Armstrong SE, Olson BD, Popp J, Braatz J, Loveless TD, Holman WT, McMorrow D, Massengill LW. Single-event transient error characterization of a radiation-hardened by design 90 nm SerDes transmitter driver Ieee Transactions On Nuclear Science. 56: 3463-3468. DOI: 10.1109/Tns.2009.2033924  0.414
2009 Kauppila AV, Loveless TD, Vaughn GL, Bhuva BL, Massengill LW, Holman WT. Analysis of the single event effects for a 90nm CMOS phase-locked loop Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 201-206. DOI: 10.1109/RADECS.2009.5994580  0.305
2008 Narasimham B, Amusan OA, Bhuva BL, Schrimpf RD, Holman WT. Extended SET pulses in sequential circuits leading to increased SE vulnerability Ieee Transactions On Nuclear Science. 55: 3077-3081. DOI: 10.1109/Tns.2008.2007121  0.379
2008 Olson BD, Holman WT, Massengill LW, Bhuva BL, Fleming PR. Single-event effect mitigation in switched-capacitor comparator designs Ieee Transactions On Nuclear Science. 55: 3440-3446. DOI: 10.1109/Tns.2008.2006895  0.393
2008 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Casey MC, Reed RA, Nation SA, McMorrow D, Melinger JS. A probabilistic analysis technique applied to a radiation-hardened-by- design voltage-controlled oscillator for mixed-signal phase-locked loops Ieee Transactions On Nuclear Science. 55: 3447-3455. DOI: 10.1109/Tns.2008.2005677  0.308
2008 Narasimham B, Shuler RL, Black JD, Bhuva BL, Schrimpf RD, Witulski AF, Holman WT, Massengill LW. Quantifying the reduction in collected charge and soft errors in the presence of guard rings Ieee Transactions On Device and Materials Reliability. 8: 203-208. DOI: 10.1109/Tdmr.2007.912778  0.33
2008 Fleming PR, Olson BD, Holman WT, Bhuva BL, Massengill LW. Design technique for mitigation of soft errors in differential switched-capacitor circuits Ieee Transactions On Circuits and Systems Ii: Express Briefs. 55: 838-842. DOI: 10.1109/Tcsii.2008.923437  0.386
2007 Narasimham B, Bhuva BL, Schrimpf RD, Massengill LW, Gadlage MJ, Amusan OA, Holman WT, Witulski AF, Robinson WH, Black JD, Benedetto JM, Eaton PH. Characterization of digital single event transient pulse-widths in 130-nm and 90-nm CMOS technologies Ieee Transactions On Nuclear Science. 54: 2506-2511. DOI: 10.1109/Tns.2007.910125  0.314
2007 Kelly AT, Fleming PR, Holman WT, Witulski AF, Bhuva BL, Massengill LW. Differential analog layout for improved ASET tolerance Ieee Transactions On Nuclear Science. 54: 2053-2059. DOI: 10.1109/Tns.2007.910124  0.385
2007 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Reed RA, McMorrow D, Melinger JS, Jenkins P. A single-event-hardened phase-locked loop fabricated in 130 nm CMOS Ieee Transactions On Nuclear Science. 54: 2012-2020. DOI: 10.1109/Tns.2007.908166  0.437
2007 Loveless TD, Massengill LW, Holman WT, Bhuva BL. Modeling and mitigating single-event transients in voltage-controlled oscillators Ieee Transactions On Nuclear Science. 54: 2561-2567. DOI: 10.1109/Tns.2007.907988  0.385
2007 Narasimham B, Shuler RL, Black JD, Bhuva BL, Schrimpf RD, Witulski AF, Holman WT, Massengill LW. Quantifying the effectiveness of guard bands in reducing the collected charge leading to soft errors Annual Proceedings - Reliability Physics (Symposium). 676-677. DOI: 10.1109/RELPHY.2007.369565  0.335
2006 Loveless TD, Massengill LW, Bhuva BL, Holman WT, Witulski AF, Boulghassoul Y. A hardened-by-design technique for RF digital phase-locked loops Ieee Transactions On Nuclear Science. 53: 3432-3438. DOI: 10.1109/Tns.2006.886203  0.404
2006 Narasimham B, Bhuva BL, Holman WT, Schrimpf RD, Massengill LW, Witulski AF, Robinson WH. The effect of negative feedback on single event transient propagation in digital circuits Ieee Transactions On Nuclear Science. 53: 3285-3290. DOI: 10.1109/Tns.2006.885380  0.4
2006 Ramachandran V, Narasimham B, Fleetwood DM, Schrimpf RD, Holman WT, Witulski AF, Pease RL, Dunham GW, Seiler JE, Platteter DG. Modeling total-dose effects for a low-dropout voltage regulator Ieee Transactions On Nuclear Science. 53: 3223-3231. DOI: 10.1109/Tns.2006.885377  0.305
2006 Boulghassoul Y, Massengill LW, Sternberg AL, Bhuva BL, Holman WT. Towards SET mitigation in RF digital PLLs: From error characterization to radiation hardening considerations Ieee Transactions On Nuclear Science. 53: 2047-2053. DOI: 10.1109/TNS.2006.876035  0.424
2006 Narasimham B, Ramachandran V, Bhuva BL, Schrimpf RD, Witulski AF, Holman WT, Massengill LW, Black JD, Robinson WH, McMorrow D. On-chip characterization of single-event transient pulsewidths Ieee Transactions On Device and Materials Reliability. 6: 542-548. DOI: 10.1109/Tdmr.2006.885589  0.324
2005 Adell PC, Schrimpf RD, Cirba CR, Holman WT, Zhu X, Barnaby HJ, Mion O. Single event transient effects in a voltage reference Microelectronics Reliability. 45: 355-359. DOI: 10.1016/J.Microrel.2004.05.029  0.351
2004 Boulghassoul Y, Buchner S, McMorrow D, Pouget V, Massengill LW, Fouillat P, Holman WT, Poivey C, Howard JW, Savage M, Maher MC. Investigation of millisecond-long analog single-event transients in the LM6144 op amp Ieee Transactions On Nuclear Science. 51: 3529-3536. DOI: 10.1109/Tns.2004.839196  0.413
1999 Schaffer V, Holman WT. Low-voltage CMOS analog computational circuits Midwest Symposium On Circuits and Systems. 1: 271-274.  0.315
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