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Jeng-Ya Yeh, Ph.D. - Publications

Affiliations: 
2005 University of Wisconsin, Madison, Madison, WI 
Area:
Electronics and Electrical Engineering
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Xu L, Patel D, Menoni CS, Pikal JM, Yeh JY, Huang JYT, Mawst LJ, Tansu N. Carrier recombination dynamics investigations of strain-compensated InGaAsN quantum wells Ieee Photonics Journal. 4: 2382-2389. DOI: 10.1109/Jphot.2012.2233465  0.678
2012 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Experimental evidence of the impact of nitrogen on carrier capture and escape times in InGaAsN/GaAs Single quantum well Ieee Photonics Journal. 4: 2262-2271. DOI: 10.1109/Jphot.2012.2230251  0.699
2011 Xu L, Patel D, Menoni CS, Yeh JY, Mawst LJ, Tansu N. Investigation of the carrier escape and capture processes in InGaAsN quantum well lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 682-683. DOI: 10.1109/Pho.2011.6110733  0.732
2008 Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105  0.747
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486  0.719
2005 Yeh JY, Mawst LJ, Tansu N. The role of carrier transport on the current injection efficiency of InGaAsN quantum-well lasers Ieee Photonics Technology Letters. 17: 1779-1781. DOI: 10.1109/Lpt.2005.852331  0.706
2005 Anton OH, Patel D, Menoni CS, Yeh JY, Van Roy TT, Mawst LJ, Pikal JM, Tansu N. Frequency response of strain-compensated InGaAsN-GaAsP-GaAs SQW lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1079-1088. DOI: 10.1109/Jstqe.2005.853845  0.658
2005 Shterengas L, Belenky GL, Yeh JY, Mawst LJ, Tansu N. Differential gain and linewidth-enhancement factor in dilute-nitride GaAs-based 1.3-/spl mu/m diode lasers Ieee Journal On Selected Topics in Quantum Electronics. 11: 1063-1068. DOI: 10.1109/Jstqe.2005.853736  0.713
2005 Palmer DJ, Smowton PM, Blood P, Yeh JY, Mawst LJ, Tansu N. Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1868070  0.715
2004 Chang YH, Kuo HC, Chang YA, Tsai MY, Wang SC, Tansu N, Yeh J, Mawst LJ. Temperature dependent photoluminescence of highly strained InGaAsN/GaAs Quantum Well ( λ=1.28-1.45 μm) with GaAsP strain-compensated layer The Japan Society of Applied Physics. 2004: 82-83. DOI: 10.7567/Ssdm.2004.F-1-2  0.672
2004 Yeh JY, Tansu N, Mawst LJ. Temperature-Sensitivity Analysis of 1360-nm Dilute-Nitride Quantum-Well Lasers Ieee Photonics Technology Letters. 16: 741-743. DOI: 10.1109/Lpt.2004.823715  0.712
2004 Tansu N, Yeh JY, Mawst LJ. Physics and characteristics of high performance 1200 nm InGaAs and 1300-1400 nm InGaAsN quantum well lasers obtained by metal-organic chemical vapour deposition Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/020  0.73
2004 Yeh JY, Mawst LJ, Tansu N. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime Journal of Crystal Growth. 272: 719-725. DOI: 10.1016/J.Jcrysgro.2004.09.005  0.738
2003 Tansu N, Yeh JY, Mawst LJ. High-Performance 1200-nm InGaAs and 1300-nm InGaAsN Quantum-Well Lasers by Metalorganic Chemical Vapor Deposition Ieee Journal On Selected Topics in Quantum Electronics. 9: 1220-1227. DOI: 10.1109/Jstqe.2003.820911  0.73
2003 Tansu N, Yeh JY, Mawst LJ. Experimental evidence of carrier leakage in InGaAsN quantum-well lasers Applied Physics Letters. 83: 2112-2114. DOI: 10.1063/1.1611279  0.743
2003 Tansu N, Yeh JY, Mawst LJ. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm Applied Physics Letters. 82: 4038-4040. DOI: 10.1063/1.1581978  0.75
2003 Tansu N, Yeh JY, Mawst LJ. Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing Applied Physics Letters. 82: 3008-3010. DOI: 10.1063/1.1572470  0.705
2001 Ivanisevic A, Yeh JY, Mawst L, Kuech TF, Ellis AB. Light-emitting diodes as chemical sensors. Nature. 409: 476. PMID 11206534 DOI: 10.1038/35054131  0.454
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