| Year |
Citation |
Score |
| 2024 |
Zhao Y, Yao Y, Chai Y, Zhou Z, Li Y, Guo Y, Lu Q, Liu H, Yang G, Dong G, Peng B, Hu Z, Liu M. Greatly Improved the Tunable Amplitude of Ferromagnetism Based on Interface Effect of Flexible Pt/YIG Heterojunctions. Acs Applied Materials & Interfaces. PMID 38350012 DOI: 10.1021/acsami.3c17220 |
0.453 |
|
| 2024 |
Wang W, Liu J, Su W, Han Y, Du Q, Wu J, Hu Z, Wang C, Jiang Z, Wang Z, Liu M. Heat-Assisted Magnetization Switching in Flexible Spin-Orbit Torque Devices. Nano Letters. PMID 38306120 DOI: 10.1021/acs.nanolett.3c04535 |
0.397 |
|
| 2024 |
Du Q, Wang W, Tang F, Su W, Wu J, Hu Z, Wang Z, Liu M. Ultralow Electric Current-Assisted Magnetization Switching due to Thermally Engineered Magnetic Anisotropy. Acs Applied Materials & Interfaces. PMID 38300878 DOI: 10.1021/acsami.3c17325 |
0.508 |
|
| 2023 |
Wang C, Du Y, Zhao Y, He Z, Wang S, Zhang Y, Jiang Y, Du Y, Wu J, Jiang Z, Liu M. Solar-Powered Switch of Antiferromagnetism/Ferromagnetism in Flexible Spintronics. Nanomaterials (Basel, Switzerland). 13. PMID 38133055 DOI: 10.3390/nano13243158 |
0.375 |
|
| 2023 |
Yang G, Dong G, Zhang B, Xu X, Zhao Y, Hu Z, Liu M. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process. Nano-Micro Letters. 16: 19. PMID 37975933 DOI: 10.1007/s40820-023-01233-z |
0.322 |
|
| 2023 |
Du Y, Zhao Y, Wang L, He Z, Wu Y, Wang C, Zhao L, Jiang Z, Liu M, Zhou Z. Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light. Small (Weinheim An Der Bergstrasse, Germany). e2302884. PMID 37403297 DOI: 10.1002/smll.202302884 |
0.569 |
|
| 2023 |
Zhao M, Zhao Y, Li Y, Dong G, He Z, Du Y, Jiang Y, Wu S, Wang C, Zhao L, Jiang Z, Liu M, Zhou Z. Manipulations of Spin Wave by Photoelectrons in Ferromagnetic/Non-Ferromagnetic Alloyed Film. Advanced Materials (Deerfield Beach, Fla.). e2303810. PMID 37401913 DOI: 10.1002/adma.202303810 |
0.502 |
|
| 2023 |
Zhao M, Wang L, Zhao Y, Du Y, He Z, Chen K, Luo Z, Yan W, Li Q, Wang C, Jiang Z, Liu M, Zhou Z. Deterministic Magnetic Switching in Perpendicular Magnetic Trilayers Through Sunlight-Induced Photoelectron Injection. Small (Weinheim An Der Bergstrasse, Germany). e2301955. PMID 36970816 DOI: 10.1002/smll.202301955 |
0.609 |
|
| 2023 |
Liu H, Zhu W, Mao Q, Peng B, Xu Y, Dong G, Chen B, Peng R, Zhao Y, Zhou Z, Yang S, Huang H, Liu M. Single-crystalline BaZr Ti O membranes enabled high energy density in PEI-based composites for high-temperature electrostatic capacitors. Advanced Materials (Deerfield Beach, Fla.). e2300962. PMID 36872865 DOI: 10.1002/adma.202300962 |
0.458 |
|
| 2022 |
Zhang Q, Yang G, Xue L, Dong G, Su W, Cui MJ, Wang ZG, Liu M, Zhou Z, Zhang X. Ultrasoft and Biocompatible Magnetic-Hydrogel-Based Strain Sensors for Wireless Passive Biomechanical Monitoring. Acs Nano. PMID 36479886 DOI: 10.1021/acsnano.2c10404 |
0.5 |
|
| 2022 |
Shen L, Zhang Y, Liu T, Wang H, Ma C, Liu M. Bending Modulated Ultralarge Magnetoresistance in Flexible LaBaMnO Thin Film Based Device. Acs Applied Materials & Interfaces. PMID 36263675 DOI: 10.1021/acsami.2c13550 |
0.361 |
|
| 2022 |
Peng B, Lu Q, Tang H, Zhang Y, Cheng Y, Qiu R, Guo Y, Zhou Z, Liu M. Large in-plane piezo-strain enhanced voltage control of magnetic anisotropy in Si-compatible multiferroic thin films. Materials Horizons. PMID 36196984 DOI: 10.1039/d2mh01020h |
0.594 |
|
| 2022 |
Wang D, Wang Z, Xu N, Liu L, Lin H, Zhao X, Jiang S, Lin W, Gao N, Liu M, Xing G. Synergy of Spin-Orbit Torque and Built-In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2203006. PMID 35927016 DOI: 10.1002/advs.202203006 |
0.321 |
|
| 2022 |
Li Y, Zha X, Zhao Y, Lu Q, Li B, Li C, Zhou Z, Liu M. Enhancing the Spin-Orbit Torque Efficiency by the Insertion of a Sub-nanometer β-W Layer. Acs Nano. PMID 35912431 DOI: 10.1021/acsnano.2c00093 |
0.438 |
|
| 2022 |
Cheng Y, Dong G, Li Y, Yang G, Zhang B, Guan M, Zhou Z, Liu M. Strain Modulation of Perpendicular Magnetic Anisotropy in Wrinkle-Patterned (Co/Pt)/BaTiO Magnetoelectric Heterostructures. Acs Nano. PMID 35848713 DOI: 10.1021/acsnano.2c04754 |
0.568 |
|
| 2022 |
Wang T, Peng RC, Dong G, Du Y, Zhao S, Zhao Y, Zhou C, Yang S, Shi K, Zhou Z, Liu M, Pan J. Enhanced Energy Density at a Low Electric Field in PVDF-Based Heterojunctions Sandwiched with High Ion-Polarized BTO Films. Acs Applied Materials & Interfaces. 14: 17849-17857. PMID 35389212 DOI: 10.1021/acsami.2c02327 |
0.721 |
|
| 2022 |
Lu Q, Li P, Guo Z, Dong G, Peng B, Zha X, Min T, Zhou Z, Liu M. Giant tunable spin Hall angle in sputtered BiSe controlled by an electric field. Nature Communications. 13: 1650. PMID 35347125 DOI: 10.1038/s41467-022-29281-w |
0.499 |
|
| 2022 |
Zhou Y, Guo C, Dong G, Liu H, Zhou Z, Niu B, Wu D, Li T, Huang H, Liu M, Min T. Tip-Induced In-Plane Ferroelectric Superstructure in Zigzag-Wrinkled BaTiO Thin Films. Nano Letters. PMID 35312334 DOI: 10.1021/acs.nanolett.1c05028 |
0.485 |
|
| 2022 |
Liu M, Li C, Peng Z, Chen S, Zhang B. Simple but Efficient Method To Transport Droplets on Arbitrarily Controllable Paths. Langmuir : the Acs Journal of Surfaces and Colloids. 38: 3917-3924. PMID 35297634 DOI: 10.1021/acs.langmuir.2c00194 |
0.33 |
|
| 2022 |
Dong G, Wang T, Liu H, Zhang Y, Zhao Y, Hu Z, Ren W, Ye ZG, Shi K, Zhou Z, Liu M, Pan J. Strain-Induced Magnetoelectric Coupling in FeO/BaTiO Nanopillar Composites. Acs Applied Materials & Interfaces. PMID 35271247 DOI: 10.1021/acsami.2c00058 |
0.477 |
|
| 2022 |
Hou W, Yao Y, Li Y, Peng B, Shi K, Zhou Z, Pan J, Liu M, Hu J. Linearly shifting ferromagnetic resonance response of LaSrMnO thin film for body temperature sensors. Frontiers of Materials Science. 16: 220589. PMID 35228892 DOI: 10.1007/s11706-022-0589-5 |
0.466 |
|
| 2022 |
Dong G, Hu Y, Guo C, Wu H, Liu H, Peng R, Xian D, Mao Q, Dong Y, Zhao Y, Peng B, Wang Z, Hu Z, Zhang J, Wang X, ... ... Liu M, et al. Self-assembled Epitaxial Ferroelectric Oxide Nano-spring with Super-scalability. Advanced Materials (Deerfield Beach, Fla.). e2108419. PMID 35092066 DOI: 10.1002/adma.202108419 |
0.429 |
|
| 2021 |
Peng B, Tang H, Cheng Y, Zhang Y, Qiu R, Lu Q, Zhou Z, Liu M. Voltage Control of Perpendicular Magnetic Anisotropy in Multiferroic Composite Thin Films under Strong Electric Fields. Acs Applied Materials & Interfaces. PMID 34914375 DOI: 10.1021/acsami.1c16582 |
0.619 |
|
| 2021 |
Zhao Y, Li Y, Chen C, Dong G, Zhu S, Zhao Y, Tian B, Jiang Z, Zhou Z, Shi K, Liu M, Pan J. Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial LaSrMnO(111) Thin Films. Acs Applied Materials & Interfaces. PMID 34859661 DOI: 10.1021/acsami.1c18136 |
0.571 |
|
| 2020 |
Zhao Y, Zhao M, Tian B, Jiang Z, Wang Y, Liu M, Zhou Z. Enhancing Sunlight Control of Interfacial Magnetism by Introducing the ZnO Layer for Electron Harvesting. Acs Applied Materials & Interfaces. PMID 33351600 DOI: 10.1021/acsami.0c19367 |
0.565 |
|
| 2020 |
Zhao Y, Zhao S, Wang L, Wang S, Du Y, Zhao Y, Jin S, Min T, Tian B, Jiang Z, Zhou Z, Liu M. Photovoltaic modulation of ferromagnetism within a FM metal/P-N junction Si heterostructure. Nanoscale. PMID 33332513 DOI: 10.1039/d0nr07911a |
0.771 |
|
| 2020 |
Zhang Q, Peng B, Zhao Y, Li C, Zhu S, Shi K, Zhou Z, Zhang X, Liu M, Pan J. Flexible CoFeB/Silk Films for Biocompatible RF/Microwave Applications. Acs Applied Materials & Interfaces. PMID 33141550 DOI: 10.1021/acsami.0c15530 |
0.479 |
|
| 2020 |
Dong G, Li S, Li T, Wu H, Nan T, Wang X, Liu H, Cheng Y, Zhou Y, Qu W, Zhao Y, Peng B, Wang Z, Hu Z, Luo Z, ... ... Liu M, et al. Periodic Wrinkle-Patterned Single-Crystalline Ferroelectric Oxide Membranes with Enhanced Piezoelectricity. Advanced Materials (Deerfield Beach, Fla.). e2004477. PMID 33135253 DOI: 10.1002/adma.202004477 |
0.426 |
|
| 2020 |
Peng B, Peng RC, Zhang YQ, Dong G, Zhou Z, Zhou Y, Li T, Liu Z, Luo Z, Wang S, Xia Y, Qiu R, Cheng X, Xue F, Hu Z, ... ... Liu M, et al. Phase transition enhanced superior elasticity in freestanding single-crystalline multiferroic BiFeO membranes. Science Advances. 6. PMID 32937363 DOI: 10.1126/Sciadv.Aba5847 |
0.515 |
|
| 2020 |
Jia S, Li H, Gotoh T, Longeaud C, Zhang B, Lyu J, Lv S, Zhu M, Song Z, Liu Q, Robertson J, Liu M. Ultrahigh drive current and large selectivity in GeS selector. Nature Communications. 11: 4636. PMID 32934210 DOI: 10.1038/S41467-020-18382-Z |
0.359 |
|
| 2020 |
Zhao S, Zhao Y, Tian B, Liu J, Jin S, Jiang Z, Zhou Z, Liu M. Photovoltaic Control of Ferromagnetism for Flexible Spintronics. Acs Applied Materials & Interfaces. PMID 32840102 DOI: 10.1021/Acsami.0C11954.S001 |
0.778 |
|
| 2020 |
Luo Q, Cheng Y, Yang J, Cao R, Ma H, Yang Y, Huang R, Wei W, Zheng Y, Gong T, Yu J, Xu X, Yuan P, Li X, Tai L, ... ... Liu M, et al. A highly CMOS compatible hafnia-based ferroelectric diode. Nature Communications. 11: 1391. PMID 32170177 DOI: 10.1038/S41467-020-15159-2 |
0.351 |
|
| 2020 |
Cheng SD, Lu L, Cheng S, Shen L, Liu M, Dai Y, Wu SQ, Mi SB. Self-assembling behavior and interface structure in vertically aligned nanocomposite (PrBaMnO):(CeO) films on (001) (La,Sr)(Al,Ta)O substrates. Scientific Reports. 10: 2348. PMID 32047217 DOI: 10.1038/S41598-020-59166-1 |
0.324 |
|
| 2020 |
Wang L, Hu Z, Zhu Y, Xian D, Cai J, Guan M, Wang C, Duan J, Wu J, Wang Z, Zhou Z, Jiang ZD, Zeng Z, Liu M. Electric field-tunable giant magnetoresistance (GMR) sensor with enhanced linear range. Acs Applied Materials & Interfaces. PMID 31984722 DOI: 10.1021/Acsami.9B20038 |
0.638 |
|
| 2020 |
Tu L, Cao R, Wang X, Chen Y, Wu S, Wang F, Wang Z, Shen H, Lin T, Zhou P, Meng X, Hu W, Liu Q, Wang J, Liu M, et al. Ultrasensitive negative capacitance phototransistors. Nature Communications. 11: 101. PMID 31900395 DOI: 10.1038/S41467-019-13769-Z |
0.401 |
|
| 2020 |
Shi X, Lu C, Duan X, Chen Q, Ji H, Su Y, Chuai X, Liu D, Zhao Y, Yang G, Wang J, Lu N, Geng D, Li L, Liu M. Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors Ieee Transactions On Electron Devices. 67: 1606-1612. DOI: 10.1109/Ted.2020.2972978 |
0.349 |
|
| 2020 |
Wu J, Hu Z, Cheng M, Zhao X, Guan M, Su W, Xian D, Wang C, Wang Z, Peng B, Peng R, Zhou Z, Dong S, Jiang Z, Liu M. Highly sensitive magneto-mechano-electric magnetic field sensor based on torque effect Ieee Sensors Journal. 1-1. DOI: 10.1109/Jsen.2020.3016130 |
0.58 |
|
| 2020 |
Huo Q, Wu Z, Huang W, Wang X, Tang G, Yao J, Liu Y, Zhao X, Zhang F, Li L, Liu M. A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond Ieee Journal of the Electron Devices Society. 8: 295-301. DOI: 10.1109/Jeds.2020.2980441 |
0.312 |
|
| 2020 |
Peng R, Chen L, Zhou Z, Liu M, Nan C. Electric-field-driven Deterministic and Robust 120° Magnetic Rotation in a Concave Triangular Nanomagnet Physical Review Applied. 13. DOI: 10.1103/Physrevapplied.13.064018 |
0.596 |
|
| 2020 |
Guo C, Dong G, Zhou Z, Liu M, Huang H, Hong J, Wang X. Domain evolution in bended freestanding BaTiO3 ultrathin films: a phase-field simulation Applied Physics Letters. 116: 152903. DOI: 10.1063/5.0002248 |
0.548 |
|
| 2020 |
Fan Q, Ma C, Ma C, Lu R, Cheng S, Liu M. Manipulating leakage behavior via thickness in epitaxial BaZr0.35Ti0.65O3 thin film capacitors Applied Physics Letters. 116: 192902. DOI: 10.1063/1.5145119 |
0.39 |
|
| 2020 |
Fan L, Bi J, Xu Y, Xi K, Ma Y, Liu M, Majumdar S. Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes Electronics Letters. 56: 199-201. DOI: 10.1049/El.2019.3229 |
0.305 |
|
| 2020 |
Yao M, Cheng Y, Zhou Z, Liu M. Recent progress on the fabrication and applications of flexible ferroelectric devices Journal of Materials Chemistry C. 8: 14-27. DOI: 10.1039/C9Tc04706A |
0.539 |
|
| 2020 |
Wang Y, Yao M, Ma R, Yuan Q, Yang D, Cui B, Ma C, Liu M, Hu D. Design strategy of barium titanate/polyvinylidene fluoride-based nanocomposite films for high energy storage Journal of Materials Chemistry. 8: 884-917. DOI: 10.1039/C9Ta11527G |
0.31 |
|
| 2020 |
Zhao Y, Li Y, Zhou Z, Peng R, Zhu S, Yao M, Peng B, Zhao Y, Cheng Y, Tian B, Hu Z, Ye Z, Jiang Z, Liu M. Low-damping flexible Y3Fe5O12 thin films for tunable RF/microwave processors Materials Horizons. 7: 1558-1565. DOI: 10.1039/C9Mh01782H |
0.619 |
|
| 2020 |
Zhang Y, Ren W, Niu G, Li C, Wang C, Jiang Z, Liu M, Ye Z. Atomic layer deposition of void-free ZnFe2O4 thin films and their magnetic properties Thin Solid Films. 709: 138206. DOI: 10.1016/J.Tsf.2020.138206 |
0.35 |
|
| 2020 |
Wu S, Yun Y, Jin X, Cheng S, Liu K, Liu M, Lu L, Cheng S, Mi S. Effect of growth temperature on the microstructural properties of 0.95Na0.5Bi0.5TiO3–0.05BaTiO3 films prepared on MgO (0 0 1) substrates Materials Letters. 259: 126847. DOI: 10.1016/J.Matlet.2019.126847 |
0.314 |
|
| 2020 |
Liu K, Zhang R, Lu L, Mi S, Liu M, Wang H, Wu S, Jia C. Atomic-scale investigation of spinel LiFe5O8 thin films on SrTiO3 (001) substrates Journal of Materials Science & Technology. 40: 31-38. DOI: 10.1016/J.Jmst.2019.08.039 |
0.32 |
|
| 2020 |
Wei Y, Zhu M, Wang J, Mahalingam K, Athey B, Stephen GM, Zaeimbashi M, Wang X, He Y, Chen H, Liang X, Dong C, Zhou H, Liu M, Heiman D, et al. Homoepitaxial Mn3Ge films on ultra-thin Fe seed layer with high perpendicular magnetic anisotropy Journal of Magnetism and Magnetic Materials. 514: 167146. DOI: 10.1016/J.Jmmm.2020.167146 |
0.653 |
|
| 2020 |
Zhao J, Niu G, Ren W, Wang L, Zhang N, Sun Y, Wang Q, Shi P, Liu M, Zhao Y. Polarization behavior of` lead-free 0.94(Bi0.5Na0.5)TiO3-0.06BaTiO3 thin films with enhanced ferroelectric properties Journal of the European Ceramic Society. 40: 3928-3935. DOI: 10.1016/J.Jeurceramsoc.2020.05.020 |
0.359 |
|
| 2020 |
Zhao J, Niu G, Ren W, Wang L, Zhang N, Shi P, Liu M, Zhao Y. Structural and electrical properties of sodium bismuth titanate based 0–3 composite lead-free ferroelectric thick films Journal of Alloys and Compounds. 829: 154506. DOI: 10.1016/J.Jallcom.2020.154506 |
0.364 |
|
| 2020 |
Wang L, Bian J, Shao F, Yang B, Li L, Liang Z, Lan G, Liu M, Gao J, Yang Y. Quantitative investigation of electromechanical coupling of potassium sodium niobate-based thin films Ceramics International. 46: 9218-9224. DOI: 10.1016/J.Ceramint.2019.12.174 |
0.309 |
|
| 2020 |
Li C, Zhao S, Zhou Z, Peng B, Hu Z, Liu M. Ionic liquid gating control of magnetic anisotropy in Ni0.81Fe0.19 thin films Current Applied Physics. 20: 883-887. DOI: 10.1016/J.Cap.2020.04.008 |
0.795 |
|
| 2020 |
Lu Q, Yu B, Hu Z, He Y, Hu T, Zhao Y, Wang Z, Zhou Z, Cui W, Liu M. Surface roughness evolution induced low secondary electron yield in carbon coated Ag/Al substrates for space microwave devices Applied Surface Science. 501: 144236. DOI: 10.1016/J.Apsusc.2019.144236 |
0.492 |
|
| 2020 |
Zhao X, Peng R, Hu Z, Yang T, Hou W, Zhou Y, Li T, Du Q, Cheng Y, Wu J, Wang Z, Zhou Z, Chen L, Liu M. Shear-strain-induced over 90° rotation of local magnetization in FeCoSiB/PMN-PT (011) multiferroic heterostructures Acta Materialia. 199: 495-503. DOI: 10.1016/J.Actamat.2020.08.041 |
0.626 |
|
| 2020 |
Wu J, Hu Z, Gao X, Chu Z, Dong G, Wang Z, Peng B, Peng R, Zhou Z, Dong S, Liu M. Quantitative domain engineering for realizing d36 piezoelectric coefficient in tetragonal ceramics Acta Materialia. 188: 416-423. DOI: 10.1016/J.Actamat.2020.02.031 |
0.485 |
|
| 2020 |
Yang G, Wang J, Niu J, Chuai X, Lu C, Geng D, Lu N, Li L, Liu M. Investigation of positive bias temperature instability for monolayer polycrystalline MoS 2 field-effect transistors Science China-Physics Mechanics & Astronomy. 63: 1-4. DOI: 10.1007/S11433-019-9400-2 |
0.317 |
|
| 2020 |
Xi K, Bi J, Chu J, Xu G, Li B, Wang H, Liu M, Sandip M. Total ionization dose effects of N-type tunnel field effect transistor (TFET) with ultra-shallow pocket junction Applied Physics A. 126: 1-8. DOI: 10.1007/S00339-020-03622-2 |
0.323 |
|
| 2020 |
Lv Y, Zhou X, Long S, Wang Y, Song X, Zhou X, Xu G, Liang S, Feng Z, Cai S, Fu X, Pu A, Liu M. Enhancement-Mode β -Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistor with High Breakdown Voltage over 3000 V Realized by Oxygen Annealing Physica Status Solidi-Rapid Research Letters. 14: 1900586. DOI: 10.1002/Pssr.201900586 |
0.303 |
|
| 2020 |
Yang Q, Cheng Y, Li Y, Zhou Z, Liang J, Zhao X, Hu Z, Peng R, Yang H, Liu M. Voltage Control of Skyrmion Bubbles for Topological Flexible Spintronic Devices Advanced Electronic Materials. 6: 2000246. DOI: 10.1002/Aelm.202000246 |
0.517 |
|
| 2020 |
Su W, Wang Z, Chen Y, Zhao X, Hu C, Wen T, Hu Z, Wu J, Zhou Z, Liu M. Reconfigurable Magnetoresistive Sensor Based on Magnetoelectric Coupling Advanced Electronic Materials. 6: 1901061. DOI: 10.1002/Aelm.201901061 |
0.458 |
|
| 2019 |
Zhao Y, Zhao S, Wang L, Zhou Z, Liu J, Min T, Peng B, Hu Z, Jin S, Liu M. Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 6: 1901994. PMID 31871867 DOI: 10.1002/Advs.201901994 |
0.813 |
|
| 2019 |
Zhao X, Niu J, Yang Y, Xiao X, Chen R, Wu Z, Zhang Y, Lv H, Long S, Liu Q, Jiang CZ, Liu M. Modulating the filament rupture degree of threshold switching device for self-selective and low-current nonvolatile memory application. Nanotechnology. PMID 31860888 DOI: 10.1088/1361-6528/Ab647D |
0.322 |
|
| 2019 |
Dong G, Li S, Yao M, Zhou Z, Zhang YQ, Han X, Luo Z, Yao J, Peng B, Hu Z, Huang H, Jia T, Li J, Ren W, Ye ZG, ... ... Liu M, et al. Super-elastic ferroelectric single-crystal membrane with continuous electric dipole rotation. Science (New York, N.Y.). 366: 475-479. PMID 31649196 DOI: 10.1126/Science.Aay7221 |
0.487 |
|
| 2019 |
Chai Z, Liu M, Chen L, Peng Z, Chen S. Controllable directional deformation of micro-pillars actuated by a magnetic field. Soft Matter. PMID 31616887 DOI: 10.1039/c9sm01672d |
0.337 |
|
| 2019 |
Wang H, Shen L, Duan T, Ma C, Cao C, Jiang C, Lu X, Sun H, Liu M. Integration of Both Invariable and Tunable Microwave Magnetisms in a Single Flexible LaSrMnO Thin Film. Acs Applied Materials & Interfaces. PMID 31194498 DOI: 10.1021/Acsami.9B04877 |
0.496 |
|
| 2019 |
Hou W, Azizimanesh A, Sewaket A, Peña T, Watson C, Liu M, Askari H, Wu SM. Strain-based room-temperature non-volatile MoTe ferroelectric phase change transistor. Nature Nanotechnology. PMID 31182837 DOI: 10.1038/S41565-019-0466-2 |
0.64 |
|
| 2019 |
Hou W, Zhou Z, Zhang L, Zhao S, Peng B, Hu Z, Ren W, Ye ZG, Jiang ZD, Liu M. Low Voltage Manipulating Spin Dynamics of Flexible FeO Films through Ionic Gel Gating for Wearable Devices. Acs Applied Materials & Interfaces. PMID 31119933 DOI: 10.1021/Acsami.9B06505 |
0.753 |
|
| 2019 |
Yu J, Xu X, Gong T, Luo Q, Dong D, Yuan P, Tai L, Yin J, Zhu X, Wu X, Lv H, Liu M. Suppression of Filament Overgrowth in Conductive Bridge Random Access Memory by TaO/TaO Bi-Layer Structure. Nanoscale Research Letters. 14: 111. PMID 30923974 DOI: 10.1186/S11671-019-2942-X |
0.305 |
|
| 2019 |
Zhang L, Zhou Z, Zhang Y, Peng B, Ren W, Ye Z, Liu M. Tuning the Magnetic Anisotropy of Fe3O4/Pt Heterostructures Fabricated by Atomic Layer Deposition With
$In~Situ$
Magnetic Field Ieee Transactions On Magnetics. 55: 1-7. DOI: 10.1109/Tmag.2018.2883191 |
0.657 |
|
| 2019 |
Wang C, Pu J, Hu Z, Su W, Guan M, Peng B, Zhou Z, Wang Z, Jiang Z, Liu M. Electric Field Tuning of Anisotropic Magnetoresistance in Ni-Co/PMN-PT Multiferroic Heterostructure Ieee Transactions On Magnetics. 55: 1-3. DOI: 10.1109/Tmag.2018.2865250 |
0.543 |
|
| 2019 |
Xu G, Liu M, Yang Y, Cai L, Wang Z, Wu Q, Lu C, Zhao Z, Zhao Y, Geng D, Li L. Field-Dependent Mobility Enhancement and Contact Resistance in a-IGZO TFTs Ieee Transactions On Electron Devices. 66: 5166-5169. DOI: 10.1109/Ted.2019.2947508 |
0.348 |
|
| 2019 |
Wu Q, Yang G, Lu C, Xu G, Wang J, Dang B, Gong Y, Shi X, Chuai X, Lu N, Geng D, Wang H, Li L, Liu M. Room Temperature-Processed a-IGZO Schottky Diode for Rectifying Circuit and Bipolar 1D1R Crossbar Applications Ieee Transactions On Electron Devices. 66: 4087-4091. DOI: 10.1109/Ted.2019.2928792 |
0.378 |
|
| 2019 |
Ma H, Zhang X, Wu F, Luo Q, Gong T, Yuan P, Xu X, Liu Y, Zhao S, Zhang K, Lu C, Zhang P, Feng J, Lv H, Liu M. A Self-Rectifying Resistive Switching Device Based on HfO2/TaO
$_{{x}}$
Bilayer Structure Ieee Transactions On Electron Devices. 66: 924-928. DOI: 10.1109/Ted.2018.2883192 |
0.349 |
|
| 2019 |
Cao R, Liu Q, Liu M, Song B, Shang D, Yang Y, Luo Q, Wu S, Li Y, Wang Y, Lv H. Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode Ieee Electron Device Letters. 40: 1744-1747. DOI: 10.1109/Led.2019.2944960 |
0.316 |
|
| 2019 |
Wang H, Shen L, Lu L, Zhang B, Ma C, Cao C, Jiang C, Liu M, Jia C. Ferromagnetic Resonance of Single-Crystalline La0.67Sr0.33MnO3 Thin Film Integrated on Silicon Ieee Electron Device Letters. 40: 1856-1859. DOI: 10.1109/Led.2019.2939795 |
0.408 |
|
| 2019 |
Qin Y, Sun H, Long S, Tompa GS, Salagaj T, Dong H, He Q, Jian G, Liu Q, Lv H, Liu M. High-Performance Metal-Organic Chemical Vapor Deposition Grown $\varepsilon$ -Ga 2 O 3 Solar-Blind Photodetector With Asymmetric Schottky Electrodes Ieee Electron Device Letters. 40: 1475-1478. DOI: 10.1109/Led.2019.2932382 |
0.316 |
|
| 2019 |
Wang W, Wang R, Shi T, Wei J, Cao R, Zhao X, Wu Z, Zhang X, Lu J, Xu H, Li Q, Liu Q, Liu M. A Self-Rectification and Quasi-Linear Analogue Memristor for Artificial Neural Networks Ieee Electron Device Letters. 40: 1407-1410. DOI: 10.1109/Led.2019.2929240 |
0.303 |
|
| 2019 |
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Su W, Wang Z, Wen T, Hu Z, Wu J, Zhou Z, Liu M. Linear Anisotropic Magnetoresistive Sensor Without Barber-Pole Electrodes Ieee Electron Device Letters. 40: 969-972. DOI: 10.1109/Led.2019.2913506 |
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Wu J, Liang Z, Ma C, Hu G, Shen L, Sun Z, Zhang Y, Lu L, Liu M, Jia C. Flexible Lead-Free BaTiO 3 Ferroelectric Elements With High Performance Ieee Electron Device Letters. 40: 889-892. DOI: 10.1109/Led.2019.2911956 |
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Qin Y, Dong H, Long S, He Q, Jian G, Zhang Y, Zhou X, Yu Y, Hou X, Tan P, Zhang Z, Liu Q, Lv H, Liu M. Enhancement-Mode $\beta$ -Ga 2 O 3 Metal–Oxide–Semiconductor Field-Effect Solar-Blind Phototransistor With Ultrahigh Detectivity and Photo-to-Dark Current Ratio Ieee Electron Device Letters. 40: 742-745. DOI: 10.1109/Led.2019.2908948 |
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Luo Q, Zhang X, Yu J, Wang W, Gong T, Xu X, Yin J, Yuan P, Tai L, Dong D, Lv H, Long S, Liu Q, Liu M. Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System Ieee Electron Device Letters. 40: 718-721. DOI: 10.1109/Led.2019.2904279 |
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Luo Q, Ma H, Su H, Xue K, Cao R, Gao Z, Yu J, Gong T, Xu X, Yin J, Yuan P, Tai L, Dong D, Long S, Liu Q, ... ... Liu M, et al. Composition-Dependent Ferroelectric Properties in Sputtered HfXZr1−XO2 Thin Films Ieee Electron Device Letters. 40: 570-573. DOI: 10.1109/Led.2019.2902609 |
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Zhao X, Zhang X, Shang D, Wu Z, Xiao X, Chen R, Tang C, Liu J, Li W, Lv H, Jiang C, Liu Q, Liu M. Uniform, Fast, and Reliable Li x SiO y -Based Resistive Switching Memory Ieee Electron Device Letters. 40: 554-557. DOI: 10.1109/Led.2019.2900261 |
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Lv Y, Zhou X, Long S, Song X, Wang Y, Liang S, He Z, Han T, Tan X, Feng Z, Dong H, Zhou X, Yu Y, Cai S, Liu M. Source-Field-Plated $\beta$ -Ga 2 O 3 MOSFET With Record Power Figure of Merit of 50.4 MW/cm 2 Ieee Electron Device Letters. 40: 83-86. DOI: 10.1109/Led.2018.2881274 |
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Wu Q, Lu C, Wang H, Cao J, Yang G, Wang J, Gong Y, Shi X, Chuai X, Lu N, Geng D, Li L, Liu M. A Dual-Functional IGZO-Based Device With Schottky Diode Rectifying and Resistance Switching Behaviors Ieee Electron Device Letters. 40: 24-27. DOI: 10.1109/Led.2018.2880735 |
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Dong H, Xue H, He Q, Qin Y, Jian G, Long S, Liu M. Progress of power field effect transistor based on ultra-wide bandgap Ga2O3 semiconductor material Journal of Semiconductors. 40: 11802. DOI: 10.1088/1674-4926/40/1/011802 |
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Chen L, Wang H, Hou B, Liu M, Shen L, Lu X, Ma X, Hao Y. Hetero-integration of quasi two-dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and non-volatile modulation of two-dimensional electron gas Applied Physics Letters. 115: 193505. DOI: 10.1063/1.5123192 |
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Liu X, Yao L, Cheng Y, Xiao B, Liu M, Wang W. Observing large ferroelectric polarization in top-electrode-free Al:HfO2 thin films with Al-rich strip structures Applied Physics Letters. 115: 152901. DOI: 10.1063/1.5110668 |
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Liu M, Yang Q, Schamiloglu E, Feng J, Teng Y, Fuks MI, Jiang W, Wu R, Liu C, Zhang P. A "crab-like" 12-cavity relativistic magnetron with diffraction output driven by a transparent cathode Physics of Plasmas. 26: 103301. DOI: 10.1063/1.5097319 |
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Huzaibi HU, Shi X, Geng D, Lu N, Li L, Liu M. Charge transport mechanism in low temperature polycrystalline silicon (LTPS) thin-film transistors Aip Advances. 9: 025321. DOI: 10.1063/1.5082994 |
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Cao C, Shen L, Chen S, Yang K, Lan G, Li P, Wang W, Liu M, Chai G, Jiang C. Reciprocal-space-resolved piezoelectric control of non-volatile magnetism in epitaxial LiFe5O8 film on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 substrate Applied Physics Letters. 114: 112402. DOI: 10.1063/1.5081970 |
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Shi X, Lu C, Xu G, Yang G, Lu N, Ji Z, Geng D, Li L, Liu M. Thickness of accumulation layer in amorphous indium-gallium-zinc-oxide thin-film transistors by Kelvin Probe Force Microscopy Applied Physics Letters. 114: 73501. DOI: 10.1063/1.5057719 |
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Lai Z, Li C, Li Z, Liu X, Zhou Z, Mi W, Liu M. Electric field-tailored giant transformation of magnetic anisotropy and interfacial spin coupling in epitaxial γ′-Fe4N/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) multiferroic heterostructures Journal of Materials Chemistry C. 7: 8537-8545. DOI: 10.1039/C9Tc02162K |
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Zhang Y, Ma C, Lu X, Liu M. Recent progress on flexible inorganic single-crystalline functional oxide films for advanced electronics Materials Horizons. 6: 911-930. DOI: 10.1039/C8Mh01598H |
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Hu G, Wu J, Ma C, Liang Z, Liu W, Liu M, Wu JZ, Jia C. Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor Materials Horizons. 6: 302-310. DOI: 10.1039/C8Mh01499J |
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Liu K, Zhang R, Lu L, Mi S, Liu M, Wang H, Jia C. Formation of antiphase boundaries in CuFe2O4 films induced by rough MgAl2O4 (001) substrates Thin Solid Films. 680: 55-59. DOI: 10.1016/J.Tsf.2019.04.020 |
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Wu J, Hu Z, Gao X, Cheng M, Zhao X, Su W, Li X, Wang Z, Zhou Z, Dong S, Liu M. Electrode shape dependence of the barbell-shaped magneto-mechano-electric energy harvester for low-frequency applications Sensors and Actuators a-Physical. 297: 111535. DOI: 10.1016/J.Sna.2019.111535 |
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Guan M, Dong G, Hu Z, Peng B, He Y, Cui WZ, Zhou Z, Liu M. Shape-induced anisotropy in epitaxial Fe3O4 nanopillars Physics Letters A. 383: 125850. DOI: 10.1016/J.Physleta.2019.125850 |
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Fan Q, Ma C, Li Y, Liang Z, Cheng S, Guo M, Dai Y, Ma C, Lu L, Wang W, Wang L, Lou X, Liu M, Wang H, Jia C. Realization of high energy density in an ultra-wide temperature range through engineering of ferroelectric sandwich structures Nano Energy. 62: 725-733. DOI: 10.1016/J.Nanoen.2019.05.076 |
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Liang Z, Ma C, Shen L, Lu L, Lu X, Lou X, Liu M, Jia C. Flexible lead-free oxide film capacitors with ultrahigh energy storage performances in extremely wide operating temperature Nano Energy. 57: 519-527. DOI: 10.1016/J.Nanoen.2018.12.056 |
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Jing H, Cheng S, Lu L, Liu M, Liu K, Cheng S, Mi S. Atomic-scale imaging of heterointerface and planar faults in epitaxial (Pr, Sr)2CoO4 films on SrTiO3 (0 0 1) substrates Journal of Crystal Growth. 511: 93-98. DOI: 10.1016/J.Jcrysgro.2019.01.022 |
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Xi K, Bi J, Majumdar S, Li B, Liu J, Xu Y, Liu M. Total ionizing dose effects on graphene-based charge-trapping memory Science China Information Sciences. 62. DOI: 10.1007/S11432-018-9799-1 |
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Zhao S, Hou W, Zhou Z, Li Y, Zhu M, Li H, Li C, Hu Z, Yu P, Liu M. Ionic Liquid Gating Control of Spin Wave Resonance in La
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Yang Q, Hu Z, Zhang Y, Su W, Cheng Y, Peng B, Wu J, Zhou Z, He Y, Cui W, Wang Z, Liu M. Voltage Control of Perpendicular Exchange Bias in Multiferroic Heterostructures Advanced Electronic Materials. 5: 1900192. DOI: 10.1002/Aelm.201900192 |
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Zhao Y, Zhao S, Wang L, Zhou Z, Liu J, Min T, Peng B, Hu Z, Jin S, Liu M. Solar Driven Spintronics: Sunlight Control of Interfacial Magnetism for Solar Driven Spintronic Applications (Adv. Sci. 24/2019) Advanced Science. 6: 1970147. DOI: 10.1002/Advs.201970147 |
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Guan M, Wang L, Zhao S, Peng B, Su W, He Z, Dong G, Min T, Ma J, Hu Z, Ren W, Ye Z, Nan C, Zhou Z, Liu M. Magnetoelectric Coupling: Ionic Modulation of Interfacial Magnetism in Light Metal/Ferromagnetic Insulator Layered Nanostructures (Adv. Funct. Mater. 1/2019) Advanced Functional Materials. 29: 1970001. DOI: 10.1002/Adfm.201970001 |
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Tang J, Tong Z, Xia Y, Liu M, Lv Z, Gao Y, Lu T, Xie S, Pei Y, Fang D, Wang TJ. Super tough magnetic hydrogels for remotely triggered shape morphing. Journal of Materials Chemistry. B. 6: 2713-2722. PMID 32254223 DOI: 10.1039/c8tb00568k |
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Shen L, Lan G, Lu L, Ma C, Cao C, Jiang C, Fu H, You C, Lu X, Yang Y, Chen L, Liu M, Jia CL. A Strategy to Modulate the Bending Coupled Microwave Magnetism in Nanoscale Epitaxial Lithium Ferrite for Flexible Spintronic Devices. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1800855. PMID 30581700 DOI: 10.1002/Advs.201800855 |
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Lu N, Jiang W, Wu Q, Geng D, Li L, Liu M. A Review for Compact Model of Thin-Film Transistors (TFTs). Micromachines. 9. PMID 30445799 DOI: 10.3390/Mi9110599 |
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Lan G, Shen L, Lu L, Cao C, Jiang C, Fu H, You C, Lu X, Ma C, Liu M, Jia CL. Flexible Lithium Ferrite Nanopillar Arrays for Bending Stable Microwave Magnetism. Acs Applied Materials & Interfaces. PMID 30394081 DOI: 10.1021/Acsami.8B12954 |
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Xue H, He Q, Jian G, Long S, Pang T, Liu M. An Overview of the Ultrawide Bandgap GaO Semiconductor-Based Schottky Barrier Diode for Power Electronics Application. Nanoscale Research Letters. 13: 290. PMID 30232628 DOI: 10.1186/S11671-018-2712-1 |
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Liu W, Ma R, Liu M, Wang H. Highly Stable In-plane Microwave Magnetism in Flexible Li0.35Zn0.3Fe2.35O4 (111) Epitaxial Thin Films for Wearable Devices. Acs Applied Materials & Interfaces. PMID 30187743 DOI: 10.1021/Acsami.8B09984 |
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Wang X, Yang Q, Wang L, Zhou Z, Min T, Liu M, Sun NX. E-field Control of the RKKY Interaction in FeCoB/Ru/FeCoB/PMN-PT (011) Multiferroic Heterostructures. Advanced Materials (Deerfield Beach, Fla.). e1803612. PMID 30133018 DOI: 10.1002/Adma.201803612 |
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Guan M, Wang L, Zhao S, Zhou Z, Dong G, Su W, Min T, Ma J, Hu Z, Ren W, Ye ZG, Nan CW, Liu M. Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices. Advanced Materials (Deerfield Beach, Fla.). e1802902. PMID 30109765 DOI: 10.1002/Adma.201802902 |
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Zhao J, Niu G, Ren W, Wang L, Dong G, Zhang N, Liu M, Ye ZG. Self-Polarization in Epitaxial Fully Matched Lead-Free Bismuth Sodium Titanate Based Ferroelectric Thin Films. Acs Applied Materials & Interfaces. PMID 29969004 DOI: 10.1021/Acsami.8B02239 |
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Zhao S, Zhou Z, Li C, Peng B, Hu Z, Liu M. Low-Voltage Control of (Co/Pt) Perpendicular Magnetic Anisotropy Heterostructure for Flexible Spintronics. Acs Nano. PMID 29870657 DOI: 10.1021/Acsnano.8B03097 |
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Liu Y, Zhang Y, Zhao K, Yang Z, Feng J, Zhang X, Wang K, Meng L, Ye H, Liu M, Liu SF. A 1300 mm Ultrahigh-Performance Digital Imaging Assembly using High-Quality Perovskite Single Crystals. Advanced Materials (Deerfield Beach, Fla.). e1707314. PMID 29845652 DOI: 10.1002/Adma.201707314 |
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Zhao S, Wang L, Zhou Z, Li C, Dong G, Zhang L, Peng B, Min T, Hu Z, Ma J, Ren W, Ye ZG, Chen W, Yu P, Nan CW, ... Liu M, et al. Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy. Advanced Materials (Deerfield Beach, Fla.). e1801639. PMID 29809283 DOI: 10.1002/Adma.201801639 |
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Lu L, Nahas Y, Liu M, Du H, Jiang Z, Ren S, Wang D, Jin L, Prokhorenko S, Jia CL, Bellaiche L. Topological Defects with Distinct Dipole Configurations in PbTiO_{3}/SrTiO_{3} Multilayer Films. Physical Review Letters. 120: 177601. PMID 29756809 DOI: 10.1103/Physrevlett.120.177601 |
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Yang Q, Zhou Z, Wang L, Zhang H, Cheng Y, Hu Z, Peng B, Liu M. Ionic Gel Modulation of RKKY Interactions in Synthetic Anti-Ferromagnetic Nanostructures for Low Power Wearable Spintronic Devices. Advanced Materials (Deerfield Beach, Fla.). e1800449. PMID 29663532 DOI: 10.1002/Adma.201800449 |
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Yang Q, Wang L, Zhou Z, Wang L, Zhang Y, Zhao S, Dong G, Cheng Y, Min T, Hu Z, Chen W, Xia K, Liu M. Ionic liquid gating control of RKKY interaction in FeCoB/Ru/FeCoB and (Pt/Co)/Ru/(Co/Pt)multilayers. Nature Communications. 9: 991. PMID 29515180 DOI: 10.1038/S41467-018-03356-Z |
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Quan Y, Ren W, Niu G, Wang L, Zhao JY, Zhang N, Liu M, Ye ZG, Liu L, Karakit T. Large Piezoelectric Strain with Superior Thermal Stability and Excellent Fatigue Resistance of Lead-free Potassium Sodium Niobate-Based Grain Orientation-Controlled Ceramics. Acs Applied Materials & Interfaces. PMID 29510619 DOI: 10.1021/Acsami.8B01554 |
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Dong G, Zhou Z, Guan M, Xue X, Chen M, Ma J, Hu Z, Ren W, Ye ZG, Nan CW, Liu M. Thermal Driven Giant Spin Dynamics at Three-Dimensional Heteroepitaxial Interface in Ni0.5Zn0.5Fe2O4/BaTiO3-Pillar Nanocomposites. Acs Nano. PMID 29498510 DOI: 10.1021/Acsnano.8B00962 |
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Wu SQ, Cheng S, Lu L, Liu M, Jin XW, Cheng SD, Mi SB. B-site ordering and strain-induced phase transition in double-perovskite La2NiMnO6 films. Scientific Reports. 8: 2516. PMID 29410424 DOI: 10.1038/S41598-018-20812-4 |
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Hou W, Zhou Z, Xue X, Guan M, Hu Z, Liu M. Voltage Control of Two-Magnon Scattering in Multiferroic Layers for Tunable Magnetoelectric Devices Ieee Transactions On Magnetics. 54: 2850064. DOI: 10.1109/Tmag.2018.2850064 |
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Wang C, Su W, Hu Z, Pu J, Guan M, Peng B, Li L, Ren W, Zhou Z, Jiang Z, Liu M. Highly Sensitive Magnetic Sensor Based on Anisotropic Magnetoresistance Effect Ieee Transactions On Magnetics. 54: 1-3. DOI: 10.1109/Tmag.2018.2846758 |
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Xue X, Zhou Z, Hou W, Guan M, Hu Z, Liu M. Voltage Control of Magnetism Through Two-Magnon Scattering Effect for Magnetoelectric Microwave Devices Ieee Transactions On Magnetics. 54: 1-4. DOI: 10.1109/Tmag.2018.2835649 |
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Banerjee W, Lu N, Yang Y, Li L, Lv H, Liu Q, Long S, Liu M. Investigation of Retention Behavior of TiOx/Al2O3 Resistive Memory and Its Failure Mechanism Based on Meyer–Neldel Rule Ieee Transactions On Electron Devices. 65: 957-962. DOI: 10.1109/Ted.2017.2788460 |
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Zhu M, Hu Z, Li C, Xue X, Yang G, Ren W, Ye Z, Zhou Z, Liu M. Voltage-Tuned Transport Properties and Ferromagnetic Resonance in Lanthanum-Strontium-Manganite/Lead-Magnesium–Niobate-Lead-Titanate Multiferroic Heterostructures Ieee Magnetics Letters. 9: 1-5. DOI: 10.1109/Lmag.2017.2778687 |
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Gong T, Luo Q, Lv H, Xu X, Yu J, Yuan P, Dong D, Chen C, Yin J, Tai L, Zhu X, Liu Q, Long S, Liu M. Unveiling the Switching Mechanism of a TaOx/HfO2 Self-Selective Cell by Probing the Trap Profiles With RTN Measurements Ieee Electron Device Letters. 39: 1152-1155. DOI: 10.1109/Led.2018.2849730 |
0.33 |
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Cao R, Wang Y, Zhao S, Yang Y, Zhao X, Wang W, Zhang X, Lv H, Liu Q, Liu M. Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Ieee Electron Device Letters. 39: 1207-1210. DOI: 10.1109/Led.2018.2846570 |
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Cao J, Liu W, Wu Q, Yang G, Lu N, Ji Z, Geng D, Li L, Liu M. A New Velocity Saturation Model of MoS2 Field-Effect Transistors Ieee Electron Device Letters. 39: 893-896. DOI: 10.1109/Led.2018.2830400 |
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Luo Q, Zhang X, Hu Y, Gong T, Xu X, Yuan P, Ma H, Dong D, Lv H, Long S, Liu Q, Liu M. Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application Ieee Electron Device Letters. 39: 664-667. DOI: 10.1109/Led.2018.2821162 |
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He Q, Mu W, Fu B, Jia Z, Long S, Yu Z, Yao Z, Wang W, Dong H, Qin Y, Jian G, Zhang Y, Xue H, Lv H, Liu Q, ... ... Liu M, et al. Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics Ieee Electron Device Letters. 39: 556-559. DOI: 10.1109/Led.2018.2810858 |
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Wang W, Xu G, Chowdhury MDH, Wang H, Um JK, Ji Z, Gao N, Zong Z, Bi C, Lu C, Lu N, Banerjee W, Feng J, Li L, Kadashchuk A, ... ... Liu M, et al. Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors Physical Review B. 98: 245308. DOI: 10.1103/Physrevb.98.245308 |
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Zhao X, Hu Z, Yang Q, Peng B, Zhou Z, Liu M. Voltage control of ferromagnetic resonance and spin waves Chinese Physics B. 27: 97505. DOI: 10.1088/1674-1056/27/9/097505 |
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Peng B, Feng M, Zhang Y, Zhou Z, Hu Z, Liu M. Voltage control of perpendicular magnetic anisotropy in (Co/Pt)3/Pb(Zn1/3Nb2/3)O3-PbTiO3 multiferroic heterostructures at room temperature Applied Physics Letters. 113: 142901. DOI: 10.1063/1.5050278 |
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Chen P, Gao C, Chen G, Mi K, Liu M, Zhang P, Xue D. The low-temperature transport properties of Heusler alloy Mn2CoAl Applied Physics Letters. 113: 122402. DOI: 10.1063/1.5046396 |
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Wu Q, Banerjee W, Cao J, Ji Z, Li L, Liu M. Improvement of durability and switching speed by incorporating nanocrystals in the HfOx based resistive random access memory devices Applied Physics Letters. 113: 023105. DOI: 10.1063/1.5030780 |
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Jian G, He Q, Mu W, Fu B, Dong H, Qin Y, Zhang Y, Xue H, Long S, Jia Z, Lv H, Liu Q, Tao X, Liu M. Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties Aip Advances. 8: 015316. DOI: 10.1063/1.5007197 |
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Zhang L, Hou W, Dong G, Zhou Z, Zhao S, Hu Z, Ren W, Chen M, Nan C, Ma J, Zhou H, Chen W, Ye Z, Jiang Z, Liu M. Low voltage induced reversible magnetoelectric coupling in Fe3O4 thin films for voltage tunable spintronic devices Materials Horizons. 5: 991-999. DOI: 10.1039/C8Mh00763B |
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Cheng S, Shen L, Ma C, Cheng S, Dai Y, Mi S, Liu M, Jia C. Structural transition induced enhancement of magnetization and magnetoresistance in epitaxial (Pr0.5Ba0.5MnO3)1−x:(CeO2)x vertically aligned thin films Crystengcomm. 20: 5017-5024. DOI: 10.1039/C8Ce00389K |
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Liang Z, Liu M, Ma C, Shen L, Lu L, Jia C. High-performance BaZr0.35Ti0.65O3 thin film capacitors with ultrahigh energy storage density and excellent thermal stability Journal of Materials Chemistry. 6: 12291-12297. DOI: 10.1039/C7Ta11109F |
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| 2018 |
Sun Z, Wang L, Liu M, Ma C, Liang Z, Fan Q, Lu L, Lou X, Wang H, Jia C. Interface thickness optimization of lead-free oxide multilayer capacitors for high-performance energy storage Journal of Materials Chemistry. 6: 1858-1864. DOI: 10.1039/C7Ta10271B |
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Ren S, Ma C, Cheng S, Lu L, Shen L, Liu M. Strain relaxation and transport properties of epitaxial Pr0.5Ba0.5MnO3-δ thin films Thin Solid Films. 660: 399-404. DOI: 10.1016/J.Tsf.2018.06.028 |
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Liu D, Shi P, Ren W, Liu Y, Liu M, Zhang Y, Tian B, Lin Q, Jiang Z, Ye Z. Fabrication and characterization of La0.8Sr0.2CrO3/In2O3 thin film thermocouple for high temperature sensing Sensors and Actuators a: Physical. 280: 459-465. DOI: 10.1016/J.Sna.2018.08.024 |
0.35 |
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| 2018 |
Cheng Y, Peng B, Hu Z, Zhou Z, Liu M. Recent development and status of magnetoelectric materials and devices Physics Letters A. 382: 3018-3025. DOI: 10.1016/J.Physleta.2018.07.014 |
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Fan Q, Liu M, Ma C, Wang L, Ren S, Lu L, Lou X, Jia C. Significantly enhanced energy storage density with superior thermal stability by optimizing Ba(Zr0.15Ti0.85)O3/Ba(Zr0.35Ti0.65)O3 multilayer structure Nano Energy. 51: 539-545. DOI: 10.1016/J.Nanoen.2018.07.007 |
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| 2018 |
Liu D, Shi P, Ren W, Liu Y, Liu M, Zhang Y, Tian B, Lin Q, Jiang Z, Ye Z. Enhanced La0.8Sr0.2CrO3/Pt thin film thermocouple with Al2O3 coating layer for high temperature sensing Ceramics International. 44: S233-S237. DOI: 10.1016/J.Ceramint.2018.08.107 |
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| 2018 |
Shen L, Lan G, Lu L, Ma C, Cao C, Jiang C, Fu H, You C, Lu X, Yang Y, Chen L, Liu M, Jia C. Flexible Devices: A Strategy to Modulate the Bending Coupled Microwave Magnetism in Nanoscale Epitaxial Lithium Ferrite for Flexible Spintronic Devices (Adv. Sci. 12/2018) Advanced Science. 5: 1870077. DOI: 10.1002/Advs.201870077 |
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| 2018 |
Guan M, Wang L, Zhao S, Zhou Z, Dong G, Su W, Min T, Ma J, Hu Z, Ren W, Ye Z, Nan C, Liu M. Spintronics: Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage-Tunable Spintronic Devices (Adv. Mater. 40/2018) Advanced Materials. 30: 1870302. DOI: 10.1002/Adma.201870302 |
0.795 |
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| 2018 |
Zhao S, Wang L, Zhou Z, Li C, Dong G, Zhang L, Peng B, Min T, Hu Z, Ma J, Ren W, Ye Z, Chen W, Yu P, Nan C, ... Liu M, et al. Magnetic Anisotropy: Ionic Liquid Gating Control of Spin Reorientation Transition and Switching of Perpendicular Magnetic Anisotropy (Adv. Mater. 30/2018) Advanced Materials. 30: 1870223. DOI: 10.1002/Adma.201870223 |
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| 2018 |
Liu W, Liu M, Ma R, Zhang R, Zhang W, Yu D, Wang Q, Wang J, Wang H. Flexible Electronics: Mechanical Strain‐Tunable Microwave Magnetism in Flexible CuFe2O4 Epitaxial Thin Film for Wearable Sensors (Adv. Funct. Mater. 10/2018) Advanced Functional Materials. 28: 1870063. DOI: 10.1002/Adfm.201870063 |
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| 2018 |
Guan M, Wang L, Zhao S, Peng B, Su W, He Z, Dong G, Min T, Ma J, Hu Z, Ren W, Ye Z, Nan C, Zhou Z, Liu M. Ionic Modulation of Interfacial Magnetism in Light Metal/Ferromagnetic Insulator Layered Nanostructures Advanced Functional Materials. 29: 1805592. DOI: 10.1002/Adfm.201805592 |
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Liu M, Ma C, Liu J, Collins G, Chen C, Alemayehu AD, Subramanyam G, Dai C, Lin Y, Bhalla A. Microwave dielectric properties of epitaxial mn-doped Ba(Zr,Ti)O 3 thin films on LaAlO 3 substrates Ferroelectrics, Letters Section. 40: 65-69. DOI: 10.1080/07315171.2013.814487 |
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Li L, Lu N, Liu M. Effect of dipole layer on the density-of-states and charge transport in organic thin film transistors Applied Physics Letters. 103: 253303. DOI: 10.1063/1.4852137 |
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Zhou Z, Nan TX, Gao Y, Yang X, Beguhn S, Li M, Lu Y, Wang JL, Liu M, Mahalingam K, Howe BM, Brown GJ, Sun NX. Quantifying thickness-dependent charge mediated magnetoelectric coupling in magnetic/dielectric thin film heterostructures Applied Physics Letters. 103. DOI: 10.1063/1.4839276 |
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Li S, Liu M, Shao W, Xu J, Chen S, Zhou Z, Nan T, Sun NX, Duh J. Large E-field tunability of microwave ferromagnetic properties in Fe50Co50-Hf/lead zinc niobate–lead titanate multiferroic laminates Journal of Applied Physics. 113: 17C727. DOI: 10.1063/1.4799486 |
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Li S, Du H, Xue Q, Xie S, Liu M, Shao W, Xu J, Nan T, Sun NX, Duh J. Stress competition and vortex magnetic anisotropy in FeCoAlO high-frequency soft magnetic films with gradient Al-O contents Journal of Applied Physics. 113: 17A332. DOI: 10.1063/1.4799480 |
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Sun J, Liu Q, Xie H, Wu X, Xu F, Xu T, Long S, Lv H, Li Y, Sun L, Liu M. In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory Applied Physics Letters. 102: 53502. DOI: 10.1063/1.4790837 |
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Zhang S, Zhang G, Wang Y, Zeng J, Qiu Y, Liu M, Kong X, Xie X. A novel superconducting quantum interference device for biomagnetic measurements Chinese Science Bulletin. 58: 2917-2919. DOI: 10.1007/S11434-013-5968-Y |
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Liu M, Ma C, Liu J, Collins G, Chen C, He J, Jiang J, Meletis EI, Sun L, Jacobson AJ, Whangbo MH. Giant magnetoresistance and anomalous magnetic properties of highly epitaxial ferromagnetic LaBaCo2O(5.5+δ) thin films on (001) MgO. Acs Applied Materials & Interfaces. 4: 5524-8. PMID 22967042 DOI: 10.1021/Am301427C |
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Li S, Wang L, Xu J, Wang Z, Liu M, Lou J, Beguhn S, Nan T, Xu F, Sun NX, Duh J. Microwave Frequency Performance and High Magnetic Anisotropy of ${\rm Fe}_{70}{\rm Co}_{30}-{\rm B}$ Films Prepared by a Modified Composition Gradient Sputtering Ieee Transactions On Magnetics. 48: 4313-4316. DOI: 10.1109/Tmag.2012.2202270 |
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Ji Z, Shang L, Lu C, Wang L, Guo J, Wang H, Li D, Liu M. Phototransistors and Photoswitches From an Ultraclosely $\pi$-Stacked Organic Semiconductor Ieee Electron Device Letters. 33: 1619-1621. DOI: 10.1109/Led.2012.2212412 |
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Wang M, Lv H, Liu Q, Li Y, Xu Z, Long S, Xie H, Zhang K, Liu X, Sun H, Yang X, Liu M. Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance Ieee Electron Device Letters. 33: 1556-1558. DOI: 10.1109/Led.2012.2211563 |
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Xie H, Liu Q, Li Y, Lv H, Wang M, Liu X, Sun H, Yang X, Long S, Liu S, Liu M. Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device Semiconductor Science and Technology. 27: 125008. DOI: 10.1088/0268-1242/27/12/125008 |
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Xie H, Liu Q, Li Y, Lv H, Wang M, Zhang K, Long S, Liu S, Liu M. Effect of low constant current stress treatment on the performance of the Cu/ZrO2/Pt resistive switching device Semiconductor Science and Technology. 27: 105007. DOI: 10.1088/0268-1242/27/10/105007 |
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Zhu C, Xu Z, Huo Z, Zheng Z, Cui Y, Wang Y, Liu J, Li F, Liu M. Effect of bandgap engineering on the performance and reliability of a high-k based nanoscale charge trap flash memory Journal of Physics D. 45: 65104. DOI: 10.1088/0022-3727/45/6/065104 |
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Xu Z, Zhu C, Huo Z, Zhao S, Liu M. Effects of high-temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structures Journal of Physics D. 45: 185103. DOI: 10.1088/0022-3727/45/18/185103 |
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Liu M, Li S, Zhou Z, Beguhn S, Lou J, Xu F, Jian Lu T, Sun NX. Electrically induced enormous magnetic anisotropy in Terfenol-D/lead zinc niobate-lead titanate multiferroic heterostructures Journal of Applied Physics. 112: 063917. DOI: 10.1063/1.4754424 |
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Zhou Z, Beguhn S, Lou J, Rand S, Li M, Yang X, Li SD, Liu M, Sun NX. Low moment NiCr radio frequency magnetic films for multiferroic heterostructures with strong magnetoelectric coupling Journal of Applied Physics. 111. DOI: 10.1063/1.4722344 |
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Xu Z, Zhu C, Huo Z, Cui Y, Wang Y, Li F, Liu M. Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix Applied Physics Letters. 100: 203509. DOI: 10.1063/1.4720085 |
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Long S, Cagli C, Ielmini D, Liu M, Suñé J. Analysis and modeling of resistive switching statistics Journal of Applied Physics. 111: 74508. DOI: 10.1063/1.3699369 |
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Nan TX, Zhou ZY, Lou J, Liu M, Yang X, Gao Y, Rand S, Sun NX. Voltage impulse induced bistable magnetization switching in multiferroic heterostructures Applied Physics Letters. 100. DOI: 10.1063/1.3698363 |
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Lou J, Pellegrini GN, Liu M, Mathur ND, Sun NX. Equivalence of direct and converse magnetoelectric coefficients in strain-coupled two-phase systems Applied Physics Letters. 100: 102907. DOI: 10.1063/1.3693375 |
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Li S, Liu M, Lou J, Beguhn S, Wu J, Qiu J, Lin J, Cai Z, Hu Y, Xu F, Duh J, Sun NX. E-field tuning microwave frequency performance of Co2FeSi/lead zinc niobate–lead titanate magnetoelectric coupling composites Journal of Applied Physics. 111: 07C705. DOI: 10.1063/1.3670979 |
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Wang Y, Liu Q, Lü HB, Long SB, Wang W, Li YT, Zhang S, Lian WT, Yang JH, Liu M. Improving the electrical performance of resistive switching memory using doping technology Chinese Science Bulletin. 57: 1235-1240. DOI: 10.1007/S11434-011-4930-0 |
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Yang X, Zhang M, Wang Y, Huo Z, Long S, Zhang B, Liu J, Liu M. Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement Science China-Technological Sciences. 55: 588-593. DOI: 10.1007/S11431-011-4694-4 |
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Li Y, Long S, Lv H, Liu Q, Wang Y, Zhang S, Lian W, Wang M, Zhang K, Xie H, Liu S, Liu M. Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer. Nanotechnology. 22: 254028. PMID 21572216 DOI: 10.1088/0957-4484/22/25/254028 |
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Jiang D, Zhang M, Huo Z, Wang Q, Liu J, Yu Z, Yang X, Wang Y, Zhang B, Chen J, Liu M. A study of cycling induced degradation mechanisms in Si nanocrystal memory devices. Nanotechnology. 22: 254009. PMID 21572215 DOI: 10.1088/0957-4484/22/25/254009 |
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Li SD, Xu F, Liu M, Hu Y, Wu JP, Cai XL, Qiu J, Lin JH, Duh JG. Effect of the Thickness of Cr Interlayer on the High-Frequency Characteristics of FeCoTa/Cr/FeCoTa Multilayers Advanced Materials Research. 1356-1359. DOI: 10.4028/Www.Scientific.Net/Amr.287-290.1356 |
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Li Y, Wang Y, Liu S, Long S, Lv H, Liu Q, Wang Q, Zhang S, Liu M. Improvement of Resistive Switching Uniformity in TiO x Film by Nitrogen Annealing Journal of the Korean Physical Society. 58: 407-410. DOI: 10.3938/Jkps.58.407 |
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Xing X, Liu M, Li S, Obi O, Lou J, Zhou Z, Chen B, Sun NX. RF Magnetic Properties of FeCoB/Al$_{2}$O$_{3}$/FeCoB Structure With Varied Al$_{2}$O$_{3}$ Thickness Ieee Transactions On Magnetics. 47: 3104-3107. DOI: 10.1109/Tmag.2011.2158577 |
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Li S, Liu M, Lou J, Xing X, Su Z, Zhou Z, Xu F, Duh J, Sun NX. High In-Plane Magnetic Anisotropy and Microwave Frequency Performance of Soft Magnetic (Fe$_{50}$Co$_{50}$)$_{1-{\rm x}}$(Al$_{2}$O$_{3}$)$_{\rm x}$ Films Prepared by Modified Composition Gradient Sputtering Ieee Transactions On Magnetics. 47: 3935-3938. DOI: 10.1109/Tmag.2011.2157312 |
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Shang L, Ji Z, Wang H, Chen Y, Lu C, Liu X, Han M, Liu M. Threshold Voltage Tuning of Low-Voltage Organic Thin-Film Transistors Ieee Transactions On Electron Devices. 58: 2127-2134. DOI: 10.1109/Ted.2011.2136436 |
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Shang L, Ji Z, Wang H, Chen Y, Liu X, Han M, Liu M. Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor Ieee Electron Device Letters. 32: 1451-1453. DOI: 10.1109/Led.2011.2162218 |
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Liu X, Ji Z, Shang L, Wang H, Chen Y, Han M, Lu C, Liu M, Chen J. Organic Programmable Resistance Memory Device Based on $\hbox{Au/Alq}_{3}/\hbox{gold-nanoparticle/Alq}_{3}/\hbox{Al}$ Structure Ieee Electron Device Letters. 32: 1140-1142. DOI: 10.1109/Led.2011.2158055 |
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Lian W, Lv H, Liu Q, Long S, Wang W, Wang Y, Li Y, Zhang S, Dai Y, Chen J, Liu M. Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode Ieee Electron Device Letters. 32: 1053-1055. DOI: 10.1109/Led.2011.2157990 |
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Li Y, Long S, Lv H, Liu Q, Wang W, Wang Q, Huo Z, Wang Y, Zhang S, Liu S, Liu M. Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$ :Cu/Pt RRAM Device Ieee Electron Device Letters. 32: 363-365. DOI: 10.1109/Led.2010.2095822 |
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Li YT, Long SB, Lü HB, Liu Q, Wang Q, Wang Y, Zhang S, Lian WT, Liu S, Liu M. Investigation of resistive switching behaviours in WO3-based RRAM devices Chinese Physics B. 20. DOI: 10.1088/1674-1056/20/1/017305 |
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Yang X, Wang Y, Zhan M, Huo Z, Wang Q, Long S, Liu M. Analysis of trap generation during programming/erasing cycling in silicon nanocrystal memory devices Semiconductor Science and Technology. 26: 045011. DOI: 10.1088/0268-1242/26/4/045011 |
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Zheng Z, Huo Z, Zhang M, Zhu C, Liu J, Liu M. Improved speed and data retention characteristics in flash memory using a stacked HfO 2 /Ta 2 O 5 charge-trapping layer Semiconductor Science and Technology. 26: 105015. DOI: 10.1088/0268-1242/26/10/105015 |
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Xu Z, Huo Z, Zhu C, Cui Y, Wang M, Zheng Z, Liu J, Wang Y, Li F, Liu M. Performance-improved nonvolatile memory with aluminum nanocrystals embedded in Al2O3 for high temperature applications Journal of Applied Physics. 110: 104514. DOI: 10.1063/1.3662944 |
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Zhang M, Huo Z, Yu Z, Liu J, Liu M. Unification of three multiphonon trap-assisted tunneling mechanisms Journal of Applied Physics. 110: 114108. DOI: 10.1063/1.3662195 |
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Li N, Liu M, Zhou Z, Sun NX, Murthy DVB, Srinivasan G, Klein TM, Petrov VM, Gupta A. Electrostatic tuning of ferromagnetic resonance and magnetoelectric interactions in ferrite-piezoelectric heterostructures grown by chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3658900 |
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Liu M, Li S, Obi O, Lou J, Rand S, Sun NX. Electric field modulation of magnetoresistance in multiferroic heterostructures for ultralow power electronics Applied Physics Letters. 98. DOI: 10.1063/1.3597796 |
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Lou J, Liu M, Reed D, Ren YH, Sun NX. Electric field modulation of surface anisotropy and magneto-dynamics in multiferroic heterostructures Journal of Applied Physics. 109: 07D731. DOI: 10.1063/1.3562975 |
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Obi O, Liu M, Lou J, Stoute S, Xing X, Sun NX, Warzywoda J, Sacco A, Oates DE, Dionne GF. Spin-spray deposited NiZn-Ferrite films exhibiting μr′ > 50 at GHz range Journal of Applied Physics. 109: 07E527. DOI: 10.1063/1.3562879 |
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Liu M, Obi O, Lou J, Li S, Xing X, Yang G, Sun NX. Tunable magnetoresistance devices based on multiferroic heterostructures Journal of Applied Physics. 109: 07D913. DOI: 10.1063/1.3561771 |
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Gillette SM, Geiler AL, Chen Z, Chen Y, Arruda T, Xie C, Wang L, Zhu X, Liu M, Mukerjee S, Vittoria C, Harris VG. Active tuning of a microstrip hairpin-line microwave bandpass filter on a polycrystalline yttrium iron garnet substrate using small magnetic fields Journal of Applied Physics. 109. DOI: 10.1063/1.3556696 |
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Xing X, Yang GM, Liu M, Lou J, Obi O, Sun NX. High power density vibration energy harvester with high permeability magnetic material Journal of Applied Physics. 109: 07E514. DOI: 10.1063/1.3549607 |
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Li S, Liu M, Xu F, Lou J, Tian Z, Wu J, Hu Y, Cai X, Duh J, Sun NX. Soft magnetism and microwave magnetic properties of Fe-Co-Hf films deposited by composition gradient sputtering Journal of Applied Physics. 109: 07A315. DOI: 10.1063/1.3549584 |
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Li Y, Long S, Liu Q, Lü H, Liu S, Liu M. An overview of resistive random access memory devices Chinese Science Bulletin. 56: 3072-3078. DOI: 10.1007/S11434-011-4671-0 |
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Jin L, Zhang M, Huo Z, Yu Z, Jiang D, Wang Y, Bai J, Chen J, Liu M. Effect of high temperature annealing on the performance of MANOS charge trapping memory Science China Technological Sciences. 55: 888-893. DOI: 10.1007/S11431-011-4703-7 |
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Shang L, Ji Z, Chen Y, Wang H, Liu X, Han M, Liu M. Low voltage organic devices and circuits with aluminum oxide thin film dielectric layer Science China-Technological Sciences. 54: 95-98. DOI: 10.1007/S11431-010-4213-Z |
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Zhang S, Liu Q, Wang W, Lv H, Zuo Q, Wang Y, Li Y, Lian W, Long S, Wang Q, Liu M. Programming resistive switching memory by a charged capacitor Applied Physics A. 102: 1003-1007. DOI: 10.1007/S00339-011-6320-5 |
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Long S, Liu Q, Lv H, Li Y, Wang Y, Zhang S, Lian W, Zhang K, Wang M, Xie H, Liu M. Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell Applied Physics A. 102: 915-919. DOI: 10.1007/S00339-011-6273-8 |
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Liu M, Lou J, Li S, Sun NX. E-Field Control of Exchange Bias and Deterministic Magnetization Switching in AFM/FM/FE Multiferroic Heterostructures Advanced Functional Materials. 21: 2593-2598. DOI: 10.1002/Adfm.201002485 |
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Wang J, Song Z, Xu K, Liu M. Rectifying switching characteristics of Pt/ZnO/Pt structure based resistive memory. Journal of Nanoscience and Nanotechnology. 10: 7088-7091. PMID 21137871 DOI: 10.1166/Jnn.2010.2758 |
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Butcher B, He X, Huang M, Wang Y, Liu Q, Lv H, Liu M, Wang W. Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices. Nanotechnology. 21: 475206. PMID 21030760 DOI: 10.1088/0957-4484/21/47/475206 |
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Liu Q, Long S, Lv H, Wang W, Niu J, Huo Z, Chen J, Liu M. Controllable Growth of Nanoscale Conductive Filaments in Solid-Electrolyte-Based ReRAM by Using a Metal Nanocrystal Covered Bottom Electrode Acs Nano. 4: 6162-6168. PMID 20853865 DOI: 10.1021/Nn1017582 |
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Yang S, Wang Q, Zhang M, Long S, Liu J, Liu M. Titanium–tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory Nanotechnology. 21: 245201. PMID 20498524 DOI: 10.1088/0957-4484/21/24/245201 |
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Song F, Dai H, Tong Y, Ren B, Chen C, Sun N, Liu X, Bian J, Liu M, Gao H, Liu H, Chen X, Zhang L. Trichodermaketones A-D and 7-O-methylkoninginin D from the marine fungus Trichoderma koningii Journal of Natural Products. 73: 806-810. PMID 20384316 DOI: 10.1021/np900642p |
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Yang GM, Xing X, Daigle A, Obi O, Liu M, Lou J, Stoute S, Naishadham K, Sun NX. Planar annular ring antennas with multilayer self-biased NiCo-ferrite films loading Ieee Transactions On Antennas and Propagation. 58: 648-655. DOI: 10.1109/Tap.2009.2039295 |
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Wang Y, Lv H, Wang W, Liu Q, Long S, Wang Q, Huo Z, Zhang S, Li Y, Zuo Q, Lian W, Yan J, Liu M. Highly Stable Radiation-Hardened Resistive-Switching Memory Ieee Electron Device Letters. 31: 1470-1472. DOI: 10.1109/Led.2010.2081340 |
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Liu Q, Long S, Wang W, Tanachutiwat S, Li Y, Wang Q, Zhang M, Huo Z, Chen J, Liu M. Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$ -Based ReRAM With a Cu Nanocrystal Insertion Layer Ieee Electron Device Letters. 31: 1299-1301. DOI: 10.1109/Led.2010.2070832 |
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Wang Z, Sun K, Tong W, Wu M, Liu M, Sun NX. Competition between pumping and damping in microwave-assisted magnetization reversal in magnetic films Physical Review B. 81. DOI: 10.1103/Physrevb.81.064402 |
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Liu J, Wang Q, Long S, Zhang M, Liu M. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application Semiconductor Science and Technology. 25: 55013. DOI: 10.1088/0268-1242/25/5/055013 |
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Liu M, Obi O, Cai Z, Lou J, Yang G, Ziemer KS, Sun NX. Electrical tuning of magnetism in Fe3O4/PZN–PT multiferroic heterostructures derived by reactive magnetron sputtering Journal of Applied Physics. 107: 073916. DOI: 10.1063/1.3354104 |
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Yang GM, Xing X, Obi O, Daigle A, Liu M, Stoute S, Naishadham K, Sun NX. Loading effects of self-biased magnetic films on patch antennas with substrate/superstrate sandwich structure Iet Microwaves, Antennas and Propagation. 4: 1172-1181. DOI: 10.1049/Iet-Map.2009.0429 |
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Li Y, Long S, Liu Q, Wang Q, Zhang M, Lv H, Shao L, Wang Y, Zhang S, Zuo Q, Liu S, Liu M. Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures Physica Status Solidi-Rapid Research Letters. 4: 124-126. DOI: 10.1002/Pssr.201004086 |
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Wang Y, Liu Q, Long S, Wang W, Wang Q, Zhang M, Zhang S, Li Y, Zuo Q, Yang J, Liu M. Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications. Nanotechnology. 21: 045202. PMID 20009169 DOI: 10.1088/0957-4484/21/4/045202 |
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Guan W, Long S, Hu Y, Liu Q, Wang Q, Liu M. Resistance switching characteristics of zirconium oxide containing gold nanocrystals for nonvolatile memory applications. Journal of Nanoscience and Nanotechnology. 9: 723-6. PMID 19441379 DOI: 10.1166/Jnn.2009.C011 |
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Yang YC, Pan F, Liu Q, Liu M, Zeng F. Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Letters. 9: 1636-43. PMID 19271714 DOI: 10.1021/Nl900006G |
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Yang G, Shrabstein A, Xing X, Obi O, Stoute S, Liu M, Lou J, Sun NX. Miniaturized Antennas and Planar Bandpass Filters With Self-Biased NiCo-Ferrite Films Ieee Transactions On Magnetics. 45: 4191-4194. DOI: 10.1109/Tmag.2009.2023996 |
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Shang L, Liu M, Tu D, Liu G, Liu X, Ji Z. Low-Voltage Organic Field-Effect Transistor With PMMA/ $ \hbox{ZrO}_{2}$ Bilayer Dielectric Ieee Transactions On Electron Devices. 56: 370-376. DOI: 10.1109/Ted.2008.2011576 |
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Yang GM, Xing X, Daigle A, Liu M, Obi O, Stoute S, Naishadham K, Sun NX. Tunable miniaturized patch antennas with self-biased multilayer magnetic films Ieee Transactions On Antennas and Propagation. 57: 2190-2193. DOI: 10.1109/Tap.2009.2021972 |
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Liu Q, Long S, Wang W, Zuo Q, Zhang S, Chen J, Liu M. Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$ -Based ReRAM With Implanted Ti Ions Ieee Electron Device Letters. 30: 1335-1337. DOI: 10.1109/Led.2009.2032566 |
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Xi HZ, Man BY, Chen CS, Liu M, Wei J, Yang SY. Effects of annealing temperature on amorphous GaN films formed on Si(1 1 1) by pulsed laser deposition Semiconductor Science and Technology. 24: 85024. DOI: 10.1088/0268-1242/24/8/085024 |
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Zhang S, Long S, Guan W, Liu Q, Wang Q, Liu M. Resistive switching characteristics of MnOx-based ReRAM Journal of Physics D. 42: 55112. DOI: 10.1088/0022-3727/42/5/055112 |
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Liu M, Obi O, Lou J, Stoute S, Cai Z, Ziemer K, Sun NX. Strong magnetoelectric coupling in ferrite/ferroelectric multiferroic heterostructures derived by low temperature spin-spray deposition Journal of Physics D: Applied Physics. 42: 045007. DOI: 10.1088/0022-3727/42/4/045007 |
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Zuo Q, Long S, Liu Q, Zhang S, Wang Q, Li Y, Wang Y, Liu M. Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory Journal of Applied Physics. 106: 73724. DOI: 10.1063/1.3236632 |
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Liu Q, Dou C, Wang Y, Long S, Wang W, Liu M, Zhang M, Chen J. Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device Applied Physics Letters. 95: 23501. DOI: 10.1063/1.3176977 |
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Liu M, Abid Z, Wang W, He X, Liu Q, Guan W. Multilevel resistive switching with ionic and metallic filaments Applied Physics Letters. 94: 233106. DOI: 10.1063/1.3151822 |
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Chen Y, Gao J, Lou J, Liu M, Yoon SD, Geiler AL, Nedoroscik M, Heiman D, Sun NX, Vittoria C, Harris VG. Microwave tunability in a GaAs-based multiferroic heterostructure: Co2 MnAl/GaAs/PMN-PT Journal of Applied Physics. 105. DOI: 10.1063/1.3068543 |
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Ji Z, Liu M, Shang L, Hu W, Liu G, Liu X, Wang H. Optimizing molecular orientation for high performance organic thin film transistors based on titanyl phthalocyanine Journal of Materials Chemistry. 19: 5507. DOI: 10.1039/B907701D |
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Chen C, Jia R, Liu M, Li W, Zhu C, Li H, Zhang P, Xie C, Wang Q, Ye T. Silicon nanocrystals synthesized by electron-beam co-evaporation method and their application for nonvolatile memory Thin Solid Films. 517: 6659-6662. DOI: 10.1016/J.Tsf.2009.05.004 |
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| 2009 |
Liu X, Ji Z, Tu D, Shang L, Liu J, Liu M, Xie C. Organic nonpolar nonvolatile resistive switching in poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate thin film Organic Electronics. 10: 1191-1194. DOI: 10.1016/J.Orgel.2009.06.007 |
0.356 |
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| 2009 |
Wang H, Ji Z, Liu M, Shang L, Liu G, Liu X, Liu J, Peng Y. Advances in organic field-effect transistors and integrated circuits Science China-Technological Sciences. 52: 3105-3116. DOI: 10.1007/S11431-009-0238-6 |
0.313 |
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| 2009 |
Lou J, Liu M, Reed D, Ren Y, Sun NX. Giant Electric Field Tuning of Magnetism in Novel Multiferroic FeGaB/Lead Zinc Niobate-Lead Titanate (PZN-PT) Heterostructures Advanced Materials. 21: 4711-4715. DOI: 10.1002/Adma.200901131 |
0.671 |
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| 2009 |
Liu M, Obi O, Lou J, Chen Y, Cai Z, Stoute S, Espanol M, Lew M, Situ X, Ziemer KS, Harris VG, Sun NX. Giant electric field tuning of magnetic properties in multiferroic ferrite/ferroelectric heterostructures Advanced Functional Materials. 19: 1826-1831. DOI: 10.1002/Adfm.200801907 |
0.64 |
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| 2008 |
Yang GM, Xing X, Daigle A, Liu M, Obi O, Wang JW, Naishadham K, Sun NX. Electronically tunable miniaturized antennas on magnetoelectric substrates with enhanced performance Ieee Transactions On Magnetics. 44: 3091-3094. DOI: 10.1109/Tmag.2008.2003062 |
0.637 |
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| 2008 |
Guan W, Long S, Liu Q, Liu M, Wang W. Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ Ieee Electron Device Letters. 29: 434-437. DOI: 10.1109/Led.2008.919602 |
0.329 |
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| 2008 |
Wang Q, Jia R, Guan W, Li W, Liu Q, Hu Y, Long S, Chen B, Liu M, Ye T, Lu W, Jiang L. Comparison of discrete-storage nonvolatile memories: advantage of hybrid method for fabrication of Au nanocrystal nonvolatile memory Journal of Physics D: Applied Physics. 41: 035109. DOI: 10.1088/0022-3727/41/3/035109 |
0.335 |
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| 2008 |
Zhen L, Guan W, Shang L, Liu M, Liu G. Organic thin-film transistor memory with gold nanocrystals embedded in polyimide gate dielectric Journal of Physics D. 41: 135111. DOI: 10.1088/0022-3727/41/13/135111 |
0.371 |
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| 2008 |
Liu Q, Guan W, Long S, Liu M, Zhang S, Wang Q, Chen J. Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application Journal of Applied Physics. 104: 114514. DOI: 10.1063/1.3033561 |
0.324 |
|
| 2008 |
Zhen L, Shang L, Liu M, Tu D, Ji Z, Liu X, Liu G, Liu J, Wang H. Light-induced hysteresis characteristics of copper phthalocyanine organic thin-film transistors Applied Physics Letters. 93: 203302. DOI: 10.1063/1.3027059 |
0.331 |
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| 2008 |
Chen Y, Wang J, Liu M, Lou J, Sun NX, Vittoria C, Harris VG. Giant magnetoelectric coupling and e -field tunability in a laminated Ni2MnGa/lead-magnesium-niobate-lead titanate multiferroic heterostructure Applied Physics Letters. 93. DOI: 10.1063/1.2986480 |
0.615 |
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| 2008 |
Lou J, Reed D, Pettiford C, Liu M, Han P, Dong S, Sun NX. Giant microwave tunability in FeGaB/lead magnesium niobate-lead titanate multiferroic composites Applied Physics Letters. 92: 262502. DOI: 10.1063/1.2952828 |
0.614 |
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| 2008 |
Liu M, Obi O, Lou J, Stoute S, Huang JY, Cai Z, Ziemer KS, Sun NX. Spin-spray deposited multiferroic composite Ni0.23Fe2.77O4∕Pb(Zr,Ti)O3 with strong interface adhesion Applied Physics Letters. 92: 152504. DOI: 10.1063/1.2911743 |
0.586 |
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| 2008 |
Tu D, Liu M, Shang L, Liu X, Xie C. Asymmetric electrical bistable behavior of an eicosanoic acid/zirconium oxide bilayer system with rectifying effect Applied Physics Letters. 92: 123302. DOI: 10.1063/1.2892654 |
0.375 |
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| 2008 |
Liu Q, Guan W, Long S, Jia R, Liu M, Chen J. Resistive switching memory effect of ZrO2 films with Zr+ implanted Applied Physics Letters. 92: 12117. DOI: 10.1063/1.2832660 |
0.332 |
|
| 2008 |
Yang GM, Daigle A, Liu M, Obi O, Stoute S, Naishadham K, Sun NX. Planar circular loop antennas with self-biased magnetic film loading Electronics Letters. 44: 332-333. DOI: 10.1049/El:20080200 |
0.308 |
|
| 2008 |
Li Z, Guan W, Liu M, Long S, Jia R, Lv J, Shi Y, Zhao X. Charge storage characteristics of metal-induced nanocrystalline in erbium-doped amorphous silicon films Thin Solid Films. 516: 7657-7660. DOI: 10.1016/J.Tsf.2008.02.009 |
0.308 |
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| 2008 |
Shang L, Liu M, Tu D, Zhen L, Liu G, Jia R, Li L, Hu W. Controllable and reproducible fabrication of high anisotropic organic field effect transistors Thin Solid Films. 516: 5093-5097. DOI: 10.1016/J.Tsf.2007.10.010 |
0.379 |
|
| 2007 |
Gao H, Xiang Y, Sun N, Zhu H, Wang Y, Liu M, Ma Y, Lei H. Metabolic changes in rat prefrontal cortex and hippocampus induced by chronic morphine treatment studied ex vivo by high resolution 1H NMR spectroscopy. Neurochemistry International. 50: 386-94. PMID 17074420 DOI: 10.1016/j.neuint.2006.09.012 |
0.353 |
|
| 2007 |
Long SB, Li ZG, Zhao XW, Chen BQ, Liu M. Coulomb Staircases and Differential Conductance Oscillations in a SIMOX-Based Single-Electron Transistor Solid State Phenomena. 513-516. DOI: 10.4028/Www.Scientific.Net/Ssp.121-123.513 |
0.324 |
|
| 2007 |
Guan W, Long S, Liu M, Li Z, Hu Y, Liu Q. Fabrication and charging characteristics of MOS capacitor structure with metal nanocrystals embedded in gate oxide Journal of Physics D: Applied Physics. 40: 2754-2758. DOI: 10.1088/0022-3727/40/9/012 |
0.34 |
|
| 2007 |
Lou J, Insignares RE, Cai Z, Ziemer KS, Liu M, Sun NX. Soft magnetism, magnetostriction, and microwave properties of FeGaB thin films Applied Physics Letters. 91: 182504. DOI: 10.1063/1.2804123 |
0.645 |
|
| 2007 |
Liu M, Li X, Lou J, Zheng S, Du K, Sun NX. A modified sol-gel process for multiferroic nanocomposite films Journal of Applied Physics. 102: 083911. DOI: 10.1063/1.2800804 |
0.594 |
|
| 2007 |
Guan W, Long S, Jia R, Liu M. Nonvolatile resistive switching memory utilizing gold nanocrystals embedded in zirconium oxide Applied Physics Letters. 91: 62111. DOI: 10.1063/1.2760156 |
0.345 |
|
| 2007 |
Liu M, Li X, Imrane H, Chen Y, Goodrich T, Cai Z, Ziemer KS, Huang JY, Sun NX. Synthesis of ordered arrays of multiferroic NiFe2O4-Pb(Zr0.52Ti0.48)O3 core-shell nanowires Applied Physics Letters. 90: 152501. DOI: 10.1063/1.2722043 |
0.492 |
|
| 2007 |
Jia R, Kasai S, Wang Q, Long SB, Niu JB, Li ZG, Liu M. Surface-induced large side-gating phenomenon in GaAs quantum wire transistors and its removal by surface passivation using Si interface control layer Applied Physics Letters. 90. DOI: 10.1063/1.2718275 |
0.3 |
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| 2007 |
Liu M, Lagdani J, Imrane H, Pettiford C, Lou J, Yoon S, Harris VG, Vittoria C, Sun NX. Self-assembled magnetic nanowire arrays Applied Physics Letters. 90. DOI: 10.1063/1.2711522 |
0.357 |
|
| 2007 |
Tu D, Shang L, Liu M, Wang C, Jiang G, Song Y. Electrical bistable behavior of an organic thin film through proton transfer Applied Physics Letters. 90: 52111. DOI: 10.1063/1.2431461 |
0.374 |
|
| 2007 |
Guan W, Long S, Liu M, Liu Q, Hu Y, Li Z, Jia R. Modeling of retention characteristics for metal and semiconductor nanocrystal memories Solid-State Electronics. 51: 806-811. DOI: 10.1016/J.Sse.2007.03.017 |
0.31 |
|
| 2007 |
Wang Q, Chen YF, Long SB, Niu JB, Wang CS, Jia R, Chen BQ, Liu M, Ye TC. Fabrication and characterization of single electron transistor on SOI Microelectronic Engineering. 84: 1647-1651. DOI: 10.1016/J.Mee.2007.01.261 |
0.318 |
|
| 2006 |
Liu Y, Li H, Tu D, Ji Z, Wang C, Tang Q, Liu M, Hu W, Liu Y, Zhu D. Controlling the growth of single crystalline nanoribbons of copper tetracyanoquinodimethane for the fabrication of devices and device arrays. Journal of the American Chemical Society. 128: 12917-22. PMID 17002388 DOI: 10.1021/Ja0636183 |
0.332 |
|
| 2006 |
Chen J, Shi Y, Pu L, Zheng Y, Long S, Liu M. Silicon single electron transistors aiming at a high gate modulation factor Applied Physics Letters. 89: 173135. DOI: 10.1063/1.2370874 |
0.317 |
|
| 2006 |
Shang L, Wang C, Liu M. Model to explain the anisotropic phenomenon of effective mobility of organic field-effect transistors Applied Physics Letters. 88: 202111. DOI: 10.1063/1.2203959 |
0.306 |
|
| 2005 |
He H, Li LM, Cao WH, Sun NL, Liu MZ, Hu YH. A study of the relationships between angiotensin- converting enzyme gene, chymase gene polymorphisms, pharmacological treatment with ACE inhibitor and regression of left ventricular hypertrophy in essential hypertension patients treated with benazepril. Annals of Human Biology. 32: 30-43. PMID 15788353 DOI: 10.1080/03014460400027458 |
0.341 |
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| 2004 |
He H, Li LM, Cao WH, Liu MZ, Sun NL, Lü J, Hu YH. [Association between angiotensin converting enzyme gene, chymase gene and regression of left ventricular hypertrophy in patients treated with angiotensin converting enzyme inhibitors]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 25: 756-60. PMID 15555355 |
0.333 |
|
| 2004 |
Xu Q, Qian H, Han Z, Lin G, Liu M, Chen B, Zhu C, Wu D. Characterization of 1.9- and 1.4-nm ultrathin gate oxynitride by oxidation of nitrogen-implanted silicon substrate Ieee Transactions On Electron Devices. 51: 113-120. DOI: 10.1109/Ted.2003.821389 |
0.3 |
|
| 2002 |
Zhan S, Liu M, Yao W, Hu Y, Li L, Zhu G, Sun N, Dai L. [Prevalence and relevant factors on echocardiographic left ventricular hypertrophy among community-based hypertensive patients in Shanghai]. Zhonghua Liu Xing Bing Xue Za Zhi = Zhonghua Liuxingbingxue Zazhi. 23: 182-5. PMID 12411085 |
0.327 |
|
| 2000 |
Liu M, Wang Z, He Y, Jiang X. Resonant tunneling through nano-size quantum dots embedded in amorphous tissues Microelectronic Engineering. 47: 119-126. DOI: 10.1016/S0167-9317(99)00478-5 |
0.313 |
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