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Shyh-Chiang Shen, Ph.D. - Publications

Affiliations: 
2001 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering
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49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chen P, Park YJ, Liu Y, Detchprohm T, Yoder PD, Shen S, Dupuis RD. Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures Journal of Electronic Materials. 49: 2326-2331. DOI: 10.1007/S11664-019-07932-X  0.321
2019 Key D, Letts E, Tsou CW, Ji MH, Bakhtiary-Noodeh M, Detchprohm T, Shen SC, Dupuis R, Hashimoto T. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12. PMID 31207922 DOI: 10.3390/Ma12121925  0.388
2019 Tsou C, Ji M, Bakhtiary-Noodeh M, Detchprohm T, Dupuis RD, Shen S. Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation Ieee Transactions On Electron Devices. 66: 4273-4278. DOI: 10.1109/Ted.2019.2933421  0.336
2018 Ji M, Kim J, Detchprohm T, Zhu Y, Shen S, Dupuis RD. p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes Ieee Photonics Technology Letters. 30: 181-184. DOI: 10.1109/Lpt.2017.2779798  0.384
2018 Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation Ieee Journal of Quantum Electronics. 54: 1-11. DOI: 10.1109/Jqe.2018.2876662  0.358
2018 Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2836667  0.397
2018 Clinton EA, Vadiee E, Shen S, Mehta K, Yoder PD, Doolittle WA. Negative differential resistance in GaN homojunction tunnel diodes and low voltage loss tunnel contacts Applied Physics Letters. 112: 252103. DOI: 10.1063/1.5035293  0.401
2018 Dallas J, Pavlidis G, Chatterjee B, Lundh JS, Ji M, Kim J, Kao T, Detchprohm T, Dupuis RD, Shen S, Graham S, Choi S. Thermal characterization of gallium nitride p-i-n diodes Applied Physics Letters. 112: 73503. DOI: 10.1063/1.5006796  0.329
2017 Liu Y, Kao T, Zhu Y, Park YJ, Mehta K, Wang S, Shen S, Yoder D, Ponce FA, Detchprohm T, Dupuis RD. Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation) Proceedings of Spie. 10104: 1010405. DOI: 10.1117/12.2249958  0.404
2017 Mehta K, Detchprohm T, Park YJ, Liu Y, Moreno O, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2766288  0.367
2016 Hu W, Peng Z, Li D, Shen S, Li J, Ruan S, Zhang M, Liu B, Lin M, Li S, He Q, Peng B, Xie X, Lu M, Kuang M. Salvage resection for recurrent or metastatic hepatocellular carcinoma after percutaneous ablation therapy. International Journal of Surgery (London, England). PMID 27477949 DOI: 10.1016/j.ijsu.2016.07.066  0.444
2016 Kao TT, Kim J, Detchprohm T, Dupuis RD, Shen SC. High-Responsivity GaN/InGaN Heterojunction Phototransistors Ieee Photonics Technology Letters. 28: 2035-2038. DOI: 10.1109/Lpt.2016.2582702  0.377
2015 Shen SC, Kao TT, Kim HJ, Lee YC, Kim J, Ji MH, Ryou JH, Detchprohm T, Dupuis RD. GaN/InGaN avalanche phototransistors Applied Physics Express. 8. DOI: 10.7567/Apex.8.032101  0.374
2015 Kao TT, Kim J, Lee YC, Haq AFMS, Ji MH, Detchprohm T, Dupuis RD, Shen SC. Temperature-Dependent Characteristics of GaN Homojunction Rectifiers Ieee Transactions On Electron Devices. 62: 2679-2683. DOI: 10.1109/Ted.2015.2443135  0.326
2015 Liu YS, Kao TT, Satter MM, Lochner Z, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Ryou JH, Fischer AM, Wei YO, Xie H, Ponce FA. Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters Ieee Photonics Technology Letters. 27: 1768-1771. DOI: 10.1109/Lpt.2015.2443053  0.383
2015 Kao TT, Lee YC, Kim HJ, Ryou JH, Kim J, Detchprohm T, Dupuis RD, Shen SC. Radiative recombination in GaN/InGaN heterojunction bipolar transistors Applied Physics Letters. 107. DOI: 10.1063/1.4938147  0.31
2015 Li XH, Kao TT, Satter MM, Wei YO, Wang S, Xie H, Shen SC, Yoder PD, Fischer AM, Ponce FA, Detchprohm T, Dupuis RD. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate Applied Physics Letters. 106. DOI: 10.1063/1.4906590  0.345
2015 Li XH, Wei YO, Wang S, Xie H, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 414: 76-80. DOI: 10.1016/J.Jcrysgro.2014.10.007  0.319
2015 Li XH, Wang S, Xie H, Wei YO, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition Physica Status Solidi (B) Basic Research. 252: 1089-1095. DOI: 10.1002/Pssb.201451571  0.363
2014 Liu YS, Kao TT, Satter MM, Lochner Z, Li XH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036835  0.383
2014 Satter MM, Lochner Z, Kao TT, Liu YS, Li XH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport Ieee Journal of Quantum Electronics. 50: 166-173. DOI: 10.1109/Jqe.2014.2300757  0.397
2014 Li XH, Detchprohm T, Kao TT, Satter MM, Shen SC, Douglas Yoder P, Dupuis RD, Wang S, Wei YO, Xie H, Fischer AM, Ponce FA, Wernicke T, Reich C, Martens M, et al. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates Applied Physics Letters. 105. DOI: 10.1063/1.4897527  0.4
2014 Satter MM, Liu YS, Kao TT, Lochner Z, Li X, Ryou JH, Shen SC, Detchprohm T, Dupuis RD, Yoder PD. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 828-831. DOI: 10.1002/Pssc.201300679  0.381
2013 Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2008830  0.381
2013 Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based lateral current injection laser diodes using regrown ohmic contacts Ieee Photonics Technology Letters. 25: 313-316. DOI: 10.1109/Lpt.2012.2235826  0.367
2013 Shen SC, Dupuis RD, Lochner Z, Lee YC, Kao TT, Zhang Y, Kim HJ, Ryou JH. Working toward high-power GaN/InGaN heterojunction bipolar transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074025  0.393
2013 Kao TT, Liu YS, Mahbub Satter M, Li XH, Lochner Z, Douglas Yoder P, Detchprohm T, Dupuis RD, Shen SC, Ryou JH, Fischer AM, Wei Y, Xie H, Ponce FA. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Applied Physics Letters. 103. DOI: 10.1063/1.4829477  0.396
2013 Lochner Z, Kao TT, Liu YS, Li XH, Mahbub Satter M, Shen SC, Douglas Yoder P, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Applied Physics Letters. 102. DOI: 10.1063/1.4795719  0.409
2013 Lochner Z, Li XH, Kao TT, Satter MM, Kim HJ, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Sun K, Wei Y, Li T, Fischer A, Ponce FA. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Physica Status Solidi (a) Applications and Materials Science. 210: 1768-1770. DOI: 10.1002/Pssa.201329013  0.414
2012 Satter MM, Kim HJ, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers Ieee Journal of Quantum Electronics. 48: 703-711. DOI: 10.1109/Jqe.2012.2190496  0.364
2012 Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Polarization matching in algan-based multiple-quantum-well deep ultraviolet laser diodes on aln substrates using quaternary AlInGaN barriers Journal of Lightwave Technology. 30: 3017-3025. DOI: 10.1109/Jlt.2012.2210998  0.377
2012 Lee YC, Zhang Y, Lochner ZM, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3MW/cm 2) Physica Status Solidi (a) Applications and Materials Science. 209: 497-500. DOI: 10.1002/Pssa.201100436  0.371
2011 Shen SC, Dupuis RD, Lee YC, Kim HJ, Zhang Y, Lochner Z, Yoder PD, Ryou JH. GaN/InGaN heterojunction bipolar transistors with fT} >5GHz Ieee Electron Device Letters. 32: 1065-1067. DOI: 10.1109/Led.2011.2156378  0.369
2011 Lochner Z, Jin Kim H, Lee YC, Zhang Y, Choi S, Shen SC, Doug Yoder P, Ryou JH, Dupuis RD. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate Applied Physics Letters. 99. DOI: 10.1063/1.3659475  0.426
2011 Zhang Y, Kao TT, Liu J, Lochner Z, Kim SS, Ryou JH, Dupuis RD, Shen SC. Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3581080  0.432
2011 Lochner Z, Jin Kim H, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD. Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases Journal of Crystal Growth. 315: 278-282. DOI: 10.1016/J.Jcrysgro.2010.08.034  0.362
2011 Zhang Y, Lee YC, Lochner Z, Kim HJ, Choi S, Ryou JH, Dupuis RD, Shen SC. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2 Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2451-2453. DOI: 10.1002/Pssc.201001098  0.387
2010 Lee YC, Zhang Y, Kim HJ, Choi S, Lochner Z, Dupuis RD, Ryou JH, Shen SC. High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors Ieee Transactions On Electron Devices. 57: 2964-2969. DOI: 10.1109/Ted.2010.2064316  0.398
2010 Venkatachalam A, Klein B, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design strategies for InGaN-based green lasers Ieee Journal of Quantum Electronics. 46: 238-245. DOI: 10.1109/Jqe.2009.2029348  0.344
2010 Choi S, Kim HJ, Lochner Z, Zhang Y, Lee YC, Shen SC, Ryou JH, Dupuis RD. Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation Applied Physics Letters. 96. DOI: 10.1063/1.3446891  0.351
2010 Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1970-1973. DOI: 10.1002/Pssc.200983555  0.375
2009 Choi S, Kim HJ, Zhang Y, Bai X, Yoo D, Limb J, Ryou JH, Shen SC, Yoder PD, Dupuis RD. Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 21: 1526-1528. DOI: 10.1109/Lpt.2009.2029073  0.383
2009 Shen SC, Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH. Surface leakage in GaN/InGaN double heterojunction bipolar transistors Ieee Electron Device Letters. 30: 1119-1121. DOI: 10.1109/Led.2009.2030373  0.388
2009 Zhang Y, Shen SC, Kim HJ, Choi S, Ryou JH, Dupuis RD, Narayan B. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates Applied Physics Letters. 94. DOI: 10.1063/1.3148812  0.359
2008 Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes Journal of Crystal Growth. 310: 5217-5222. DOI: 10.1016/J.Jcrysgro.2008.07.107  0.345
2008 Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Shen SC. GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2290-2292. DOI: 10.1002/Pssc.200778704  0.431
2007 Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Yoder PD, Dupuis RD. Performance of deep ultraviolet gan avalanche photodiodes grown by MOCVD Ieee Photonics Technology Letters. 19: 1744-1746. DOI: 10.1109/Lpt.2007.906052  0.416
2007 Yoo D, Limb J, Ryou JH, Zhang Y, Shen SC, Dupuis RD, Hanser D, Preble E, Evans K. AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 19: 1313-1315. DOI: 10.1109/Lpt.2007.902376  0.419
2004 Hampson MD, Shen SC, Schwindt RS, Price RK, Chowdhury U, Wong MM, Gang Zhu T, Yoo D, Dupuis RD, Feng M. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz Ieee Electron Device Letters. 25: 238-240. DOI: 10.1109/Led.2004.826565  0.508
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