Year |
Citation |
Score |
2020 |
Wang X, Zhang H, Baba T, Jiang H, Liu C, Guan Y, Elleuch O, Kuech T, Morgan D, Idrobo JC, Voyles PM, Szlufarska I. Radiation-induced segregation in a ceramic. Nature Materials. PMID 32451511 DOI: 10.1038/S41563-020-0683-Y |
0.714 |
|
2020 |
Xi J, Liu C, Morgan D, Szlufarska I. An Unexpected Role of H During SiC Corrosion in Water The Journal of Physical Chemistry C. 124: 9394-9400. DOI: 10.1021/Acs.Jpcc.0C02027 |
0.715 |
|
2020 |
Xi J, Liu C, Szlufarska I. Effects of point defects on oxidation of 3C–SiC Journal of Nuclear Materials. 538: 152308. DOI: 10.1016/J.Jnucmat.2020.152308 |
0.736 |
|
2019 |
Liu C, Xi J, Szlufarska I. Sensitivity of SiC Grain Boundaries to Oxidation The Journal of Physical Chemistry C. 123: 11546-11554. DOI: 10.1021/Acs.Jpcc.9B00068 |
0.723 |
|
2019 |
Xi J, Jiang H, Liu C, Morgan D, Szlufarska I. Corrosion of Si, C, and SiC in molten salt Corrosion Science. 146: 1-9. DOI: 10.1016/J.Corsci.2018.10.027 |
0.71 |
|
2018 |
Liu C, Szlufarska I. Distribution of defect clusters in the primary damage of ion irradiated 3C-SiC Journal of Nuclear Materials. 509: 392-400. DOI: 10.1016/J.Jnucmat.2018.07.010 |
0.582 |
|
2017 |
Liu C, He L, Zhai Y, Tyburska-Püschel B, Voyles P, Sridharan K, Morgan D, Szlufarska I. Evolution of small defect clusters in ion-irradiated 3C-SiC: Combined cluster dynamics modeling and experimental study Acta Materialia. 125: 377-389. DOI: 10.1016/J.Actamat.2016.12.020 |
0.571 |
|
2016 |
Tyburska-Püschel B, Zhai Y, He L, Liu C, Boulle A, Voyles PM, Szlufarska I, Sridharan K. Size distribution of black spot defects and their contribution to swelling in irradiated SiC Journal of Nuclear Materials. 476: 132-139. DOI: 10.1016/J.Jnucmat.2016.04.044 |
0.591 |
|
2015 |
He L, Jiang H, Zhai Y, Liu C, Szlufarska I, Tyburska-Puschel B, Sridharan K, Voyles P. Atomic Resolution Imaging of Black Spot Defects in Ion Irradiated Silicon Carbide Microscopy and Microanalysis. 21: 1337-1338. DOI: 10.1017/S1431927615007473 |
0.619 |
|
2015 |
Liu C, Swaminathan N, Morgan D, Szlufarska I. Corrigendum to “Ab initio based rate theory model of radiation induced amorphization in β-SiC” [J. Nucl. Mater. 414 (2011) 431–439] Journal of Nuclear Materials. 457: 369. DOI: 10.1016/J.Jnucmat.2014.12.091 |
0.546 |
|
2014 |
He L, Zhai Y, Liu C, Jiang C, Szlufarska I, Tyburska-Puschel B, Sridharan K, Voyles P. High-Resolution Scanning Transmission Electron Microscopy Study of Black Spot Defects in Ion Irradiated Silicon Carbide Microscopy and Microanalysis. 20: 1824-1825. DOI: 10.1017/S143192761401085X |
0.582 |
|
Show low-probability matches. |