| Year |
Citation |
Score |
| 2019 |
Muralidharan P, Goodnick SM, Vasileska D. Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells Journal of Computational Electronics. 18: 1152-1161. DOI: 10.1007/S10825-019-01379-3 |
0.526 |
|
| 2015 |
Fang Y, Vasileska D, Honsberg C, Goodnick SM. High temperature InGaN solar cell modeling 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356348 |
0.499 |
|
| 2015 |
Maros A, Gangam S, Fang Y, Smith J, Vasileska D, Goodnick S, Bertoni MI, Honsberg CB. High temperature characterization of GaAs single junction solar cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356338 |
0.481 |
|
| 2015 |
Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A Kinetic Monte Carlo approach to study transport in amorphous silicon/crystalline silicon HIT cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356048 |
0.499 |
|
| 2015 |
Muralidharan P, Vasileska D, Goodnick SM, Bowden S. A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 1198-1200. DOI: 10.1002/Pssc.201510071 |
0.535 |
|
| 2014 |
Soligo R, Saraniti M, Goodnick SM. Terahertz devices and device modeling Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2049599 |
0.436 |
|
| 2014 |
Muralidharan P, Ghosh K, Vasileska D, Goodnick SM. Hot hole transport in a-Si/c-Si heterojunction solar cells 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 2519-2523. DOI: 10.1109/PVSC.2014.6925443 |
0.534 |
|
| 2014 |
Hathwar R, Saraniti M, Goodnick SM. Full band monte carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 645-649. DOI: 10.1109/NANO.2014.6968090 |
0.3 |
|
| 2014 |
Guerra D, Saraniti M, Ferry DK, Goodnick SM. X-parameters and efficient physical device simulation of mm-wave power transistors with harmonic loading Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2014.6848583 |
0.455 |
|
| 2013 |
Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-Based Curricula and Visual Learning Electronics. 17: 95-104. DOI: 10.7251/Els1317095V |
0.52 |
|
| 2013 |
Muralidharan P, Vasileska D, Goodnick SM. Advanced tunneling models for solar cell applications Conference Record of the Ieee Photovoltaic Specialists Conference. 2113-2117. DOI: 10.1109/PVSC.2013.6744891 |
0.534 |
|
| 2013 |
Guerra D, Saraniti M, Ferry DK, Goodnick SM. Linearity analysis of millimeter wave GaN power transistors through X-parameters and TCAD device simulations Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2013.6697725 |
0.476 |
|
| 2013 |
Padmanabhan B, Vasileska D, Goodnick SM. Current degradation due to electromechanical coupling in GaN HEMT's Microelectronics Journal. 44: 592-597. DOI: 10.1016/J.Mejo.2013.03.009 |
0.554 |
|
| 2013 |
Padmanabhan B, Vasileska D, Goodnick SM. Reliability concerns due to self-heating effects in GaN HEMTs Journal of Integrated Circuits and Systems. 8: 78-82. |
0.527 |
|
| 2012 |
Vasileska D, Hossain A, Goodnick SM. The interplay of self-heating effects and static RTF in nanowire transistors 2012 Ieee Silicon Nanoelectronics Workshop, Snw 2012. DOI: 10.1109/SNW.2012.6243294 |
0.569 |
|
| 2012 |
Padmanabhan B, Vasileska D, Goodnick SM. GaN HEMTs reliability the role of shielding Proceedings of the Ieee Conference On Nanotechnology. DOI: 10.1109/NANO.2012.6322177 |
0.595 |
|
| 2012 |
Guerra D, Ferry DK, Saraniti M, Goodnick SM. Millimeter-wave power amplifier circuit-device simulations through coupled Harmonic Balance-Monte Carlo particle-based device simulator Ieee Mtt-S International Microwave Symposium Digest. DOI: 10.1109/MWSYM.2012.6258430 |
0.307 |
|
| 2012 |
Soligo R, Guerra D, Ferry DK, Goodnick SM, Saraniti M. Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242863 |
0.306 |
|
| 2012 |
Raleva K, Vasileska D, Goodnick SM. Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242855 |
0.568 |
|
| 2012 |
Padmanabhan B, Vasileska D, Goodnick SM. Reliability of GaN HEMTs: Current degradation in GaN/AlGaN/AlN/GaN HEMT 2012 15th International Workshop On Computational Electronics, Iwce 2012. DOI: 10.1109/IWCE.2012.6242851 |
0.557 |
|
| 2012 |
Padmanabhan B, Vasileska D, Goodnick SM. Is self-heating responsible for the current collapse in GaN HEMTs? Journal of Computational Electronics. 11: 129-136. DOI: 10.1007/S10825-012-0385-Z |
0.569 |
|
| 2012 |
Gada ML, Vasileska D, Raleva K, Goodnick SM. Electron drift velocity calculations in bulk silicon using an analytical model for acoustic and optical phonon dispersions Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2012. 712-715. |
0.527 |
|
| 2011 |
Guerra D, Marino FA, Goodnick S, Ferry D, Saraniti M. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations International Journal of High Speed Electronics and Systems. 20: 423-430. DOI: 10.1142/S0129156411006714 |
0.558 |
|
| 2011 |
Guerra D, Marino FA, Akis R, Ferry DK, Goodnick SM, Saraniti M. Terahertz-capability nanoscale InGaAs HEMT design guidelines by means of full-band Monte Carlo device simulations 2011 Ieee 11th Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems, Sirf 2011 - Digest of Papers. 193-196. DOI: 10.1109/SIRF.2011.5719347 |
0.511 |
|
| 2011 |
Hossain A, Vasileska D, Goodnick SM. Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor Proceedings of the Ieee Conference On Nanotechnology. 1110-1113. DOI: 10.1109/NANO.2011.6144513 |
0.466 |
|
| 2011 |
Padmanabhan B, Vasileska D, Goodnick SM. Modeling reliability of GaN/AlGaN/AlN/GaN HEMT 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135165 |
0.541 |
|
| 2011 |
Raleva K, Vasileska D, Goodnick SM. Self-heating effects in high performance devices Communications in Computer and Information Science. 83: 114-122. DOI: 10.1007/978-3-642-19325-5_12 |
0.529 |
|
| 2011 |
Raleva K, Vasileska D, Goodnick SM. Modeling thermal effects in fully-depleted SOI devices with arbitrary crystallographic orientation Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 6046: 103-109. DOI: 10.1007/978-3-642-18466-6_11 |
0.563 |
|
| 2011 |
Padmanabhan B, Vasileska D, Goodnick SM. Electromechanical coupling in AlGaN/AlN/GaN HEMT's Technical Proceedings of the 2011 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2011. 2: 679-681. |
0.518 |
|
| 2010 |
Goodnick S, Korkin A, Krstic P, Mascher P, Preston J, Zaslavsky A. Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications. Nanotechnology. 21: 130201. PMID 20234072 DOI: 10.1088/0957-4484/21/13/130201 |
0.352 |
|
| 2010 |
Marino FA, Saraniti M, Faralli N, Ferry DK, Goodnick SM, Guerra D. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study Ieee Transactions On Electron Devices. 57: 2579-2586. DOI: 10.1109/Ted.2010.2058791 |
0.54 |
|
| 2010 |
Vasileska D, Raleva K, Goodnick SM. Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity Ieee Transactions On Electron Devices. 57: 726-728. DOI: 10.1109/Ted.2009.2039526 |
0.573 |
|
| 2010 |
Hossain A, Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in 10nm channel length nanowire transistors 2010 Silicon Nanoelectronics Workshop, Snw 2010. DOI: 10.1109/SNW.2010.5562566 |
0.545 |
|
| 2010 |
Guerra D, Akis R, Marino FA, Ferry DK, Goodnick SM, Saraniti M. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs Ieee Electron Device Letters. 31: 1217-1219. DOI: 10.1109/Led.2010.2066954 |
0.481 |
|
| 2010 |
Vasileska D, Raleva K, Goodnick SM, Aksamija Z, Knezevic I. Thermal modeling of nanodevices 2010 14th International Workshop On Computational Electronics, Iwce 2010. 355-358. DOI: 10.1109/IWCE.2010.5677916 |
0.699 |
|
| 2010 |
Vasileska D, Hossain A, Raleva K, Goodnick SM. The role of the source and drain contacts on self-heating effect in nanowire transistors Ecs Transactions. 31: 83-90. DOI: 10.1007/S10825-010-0334-7 |
0.502 |
|
| 2010 |
Raleva K, Vasileska D, Goodnick SM. The role of the boundary conditions on the current degradation in FD-SOI devices Lecture Notes in Computer Science (Including Subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics). 5910: 427-434. DOI: 10.1007/978-3-642-12535-5_50 |
0.579 |
|
| 2010 |
Marino FA, Guerra D, Goodnick S, Ferry D, Saraniti M. RF and DC characterization of state-of-the-art GaN HEMT devices through cellular Monte Carlo simulations Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2445-2449. DOI: 10.1002/Pssc.200983887 |
0.617 |
|
| 2010 |
Akis R, Faralli N, Goodnick SM, Ferry DK, Saraniti M. Optimizing performance to achieve multi-terahertz operating frequencies in pseudomorphic HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 2502-2505. DOI: 10.1002/Pssc.200983856 |
0.334 |
|
| 2010 |
Vasileska D, Klimeck G, Magana A, Goodnick S. Tool-based curricula and visual learning 9th European Conference On Elearning 2010, Ecel 2010. 643-656. |
0.469 |
|
| 2010 |
Hossain A, Raleva K, Vasileska D, Goodnick SM. Self-heating effects in nanowire transistors Nanotechnology 2010: Electronics, Devices, Fabrication, Mems, Fluidics and Computational - Technical Proceedings of the 2010 Nsti Nanotechnology Conference and Expo, Nsti-Nanotech 2010. 2: 45-48. |
0.52 |
|
| 2009 |
Yamakawa S, Akis R, Faralli N, Saraniti M, Goodnick SM. Rigid ion model of high field transport in GaN. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 174206. PMID 21825410 DOI: 10.1088/0953-8984/21/17/174206 |
0.561 |
|
| 2009 |
Huang L, Lai YC, Ferry DK, Akis R, Goodnick SM. Transmission and scarring in graphene quantum dots. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 344203. PMID 21715778 DOI: 10.1088/0953-8984/21/34/344203 |
0.435 |
|
| 2009 |
Huang L, Lai YC, Ferry DK, Goodnick SM, Akis R. Relativistic quantum scars. Physical Review Letters. 103: 054101. PMID 19792502 DOI: 10.1103/Physrevlett.103.054101 |
0.411 |
|
| 2009 |
Knezevic I, Ramayya EB, Vasileska D, Goodnick SM. Diffusive transport in quasi-2D and quasi-1D electron systems Journal of Computational and Theoretical Nanoscience. 6: 1725-1753. DOI: 10.1166/Jctn.2009.1240 |
0.709 |
|
| 2009 |
Vasileska D, Raleva K, Goodnick SM. Thermal effects in fully-depleted SOI devices Ecs Transactions. 23: 337-344. DOI: 10.1149/13183737 |
0.588 |
|
| 2009 |
Padmanabhan B, Vasileska D, Goodnick SM. Current degradation in GaN HEMTs: Is self-heating responsible? Ecs Transactions. 49: 103-109. DOI: 10.1149/04901.0103ecst |
0.538 |
|
| 2009 |
Vasileska D, Raleva K, Goodnick SM. Self-heating effects in nanoscale FD SOI devices: The role of the substrate, boundary conditions at various interfaces, and the dielectric material type for the BOX Ieee Transactions On Electron Devices. 56: 3064-3071. DOI: 10.1109/Ted.2009.2032615 |
0.532 |
|
| 2009 |
Ashok A, Vasileska D, Goodnick SM, Hartin OL. Importance of the gate-dependent polarization charge on the operation of GaN HEMTs Ieee Transactions On Electron Devices. 56: 998-1006. DOI: 10.1109/Ted.2009.2015822 |
0.528 |
|
| 2009 |
Vasileska D, Raleva K, Goodnick SM. Electro-thermal modeling of nano-scale devices 15th International Workshop On Thermal Investigations of Ics and Systems, Therminic 2009. 195-196. DOI: 10.1109/MIEL.2010.5490455 |
0.561 |
|
| 2009 |
Vasileska D, Goodnick SM, Raleva K. Self-consistent simulation of heating effects in nanoscale devices Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091146 |
0.571 |
|
| 2009 |
Ashok A, Vasileska D, Goodnick SM, Hartin O. Bias induced strain effects, short-range electron - Electron interactions and quantum effects in AlGaN/GaN HEMTs Proceedings - 2009 13th International Workshop On Computational Electronics, Iwce 2009. DOI: 10.1109/IWCE.2009.5091087 |
0.527 |
|
| 2009 |
Padmanabhan B, Ashok A, Vasileska D, Goodnick SM. Modeling GaN HEMTs using thermal particle-based device simulator 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378113 |
0.549 |
|
| 2009 |
Marino FA, Faralli N, Ferry DK, Goodnick SM, Saraniti M. Figures of merit in high-frequency and high-power GaN HEMTs Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012040 |
0.452 |
|
| 2009 |
Vasileska D, Goodnick SM, Raleva K. Modeling self-heating effects in nanoscale SOI devices Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012036 |
0.589 |
|
| 2009 |
Ashok A, Vasileska D, Goodnick SM, Hartin O. Importance of the gate-dependent polarization charge and the electron-electron interactions on the operation of GaN HEMTs Aip Conference Proceedings. 1199: 97-98. DOI: 10.1063/1.3295571 |
0.529 |
|
| 2009 |
Vasileska D, Raleva K, Goodnick SM. First self-consistent thermal device simulator Aip Conference Proceedings. 1199: 495-496. DOI: 10.1063/1.3295523 |
0.551 |
|
| 2009 |
Vasileska D, Raleva K, Goodnick SM. Inclusion of phonon dispersion and its influence on electrical characteristic degradation due to heating effects in nanoscale FD-SOI devices Aip Conference Proceedings. 1199: 493-494. DOI: 10.1063/1.3295522 |
0.517 |
|
| 2009 |
Ferry DK, Goodnick SM, Bird J. Transport in Nanostructures Transport in Nanostructures. 1-659. DOI: 10.1017/CBO9780511840463 |
0.514 |
|
| 2008 |
Akis R, Ayubi-Moak JS, Ferry DK, Goodnick SM, Faralli N, Saraniti M. Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 384201. PMID 21693809 DOI: 10.1088/0953-8984/20/38/384201 |
0.587 |
|
| 2008 |
Vasileska D, Mamaluy D, Khan HR, Raleva K, Goodnick SM. Semiconductor Device Modeling Journal of Computational and Theoretical Nanoscience. 5: 999-1030. DOI: 10.1166/Jctn.2008.2538 |
0.585 |
|
| 2008 |
Raleva K, Vasileska D, Goodnick SM, Nedjalkov M. Modeling thermal effects in nanodevices Ieee Transactions On Electron Devices. 55: 1306-1316. DOI: 10.1109/TED.2008.921263 |
0.588 |
|
| 2008 |
Goodnick SM, Vasileska D, Raleva K. Is dual gate device structure better from thermal perspective? International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 125-128. DOI: 10.1109/SISPAD.2008.4648253 |
0.56 |
|
| 2008 |
Goodnick SM, Raleva K, Vasileska D. Heating effects in dual-gate devices 2008 8th Ieee Conference On Nanotechnology, Ieee-Nano. 10-13. DOI: 10.1109/NANO.2008.12 |
0.547 |
|
| 2008 |
Raleva K, Vasileska D, Goodnick SM. Is SOD technology the solution to heating problems in SOI devices? Ieee Electron Device Letters. 29: 621-624. DOI: 10.1109/Led.2008.920756 |
0.551 |
|
| 2008 |
Tierney BD, Day TE, Goodnick SM. Investigation of spin-polarized transport in GaAs nanostructures Journal of Physics: Conference Series. 109. DOI: 10.1088/1742-6596/109/1/012034 |
0.772 |
|
| 2008 |
Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering Journal of Applied Physics. 104. DOI: 10.1063/1.2977758 |
0.688 |
|
| 2008 |
Kothari H, Ramamoorthy A, Akis R, Goodnick SM, Ferry DK, Reno JL, Bird JP. Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement Journal of Applied Physics. 103: 013701. DOI: 10.1063/1.2827466 |
0.368 |
|
| 2008 |
Vasileska D, Raleva K, Goodnick SM. Modeling heating effects in nanoscale devices: The present and the future Journal of Computational Electronics. 7: 66-93. DOI: 10.1007/S10825-008-0254-Y |
0.613 |
|
| 2008 |
Vitobello F, Faralli N, Yamakawa S, Goodnick SM, Saraniti M. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT Journal of Computational Electronics. 7: 244-247. DOI: 10.1007/S10825-008-0215-5 |
0.606 |
|
| 2008 |
Ayubi-Moak JS, Akis R, Ferry DK, Goodnick S, Faralli N, Saraniti M. Towards the global modeling of InGaAs-based pseudomorphic HEMTs Journal of Computational Electronics. 7: 187-191. DOI: 10.1007/S10825-008-0207-5 |
0.444 |
|
| 2008 |
Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Cross-sectional dependence of electron mobility and lattice thermal conductivity in silicon nanowires Journal of Computational Electronics. 7: 319-323. DOI: 10.1007/s10825-008-0195-5 |
0.65 |
|
| 2008 |
Raleva K, Vasileska D, Goodnick SM, Dzekov T. Modeling thermal effects in nano-devices Journal of Computational Electronics. 7: 226-230. DOI: 10.1007/s10825-008-0189-3 |
0.563 |
|
| 2008 |
Ayubi-Moak JS, Akis R, Saraniti M, Ferry DK, Goodnick SM. Hot electron effects in ultra-short gate length InAs/InAlAs HEMTs Physica Status Solidi (C). 5: 135-138. DOI: 10.1002/Pssc.200776577 |
0.467 |
|
| 2008 |
Goodnick SM, Raleva K, Vasileska D. Self-consistent thermal electron-phonon simulator for SOI devices Technical Proceedings of the 2008 Nsti Nanotechnology Conference and Trade Show, Nsti-Nanotech, Nanotechnology 2008. 3: 537-540. |
0.589 |
|
| 2007 |
Ramayya EB, Vasileska D, Goodnick SM, Knezevic I. Electronic and thermal properties of silicon nanowires Ecs Transactions. 6: 159-164. DOI: 10.1149/1.2728855 |
0.66 |
|
| 2007 |
Goodnick SM, Saraniti M. Cellular Monte Carlo simulation of high field transport in semiconductor devices International Journal of High Speed Electronics and Systems. 17: 465-473. DOI: 10.1142/S0129156407004655 |
0.38 |
|
| 2007 |
Yamakawa S, Saraniti M, Goodnick SM. High field transport in GaN and AlGaN/GaN heterojunctions Proceedings of Spie - the International Society For Optical Engineering. 6471. DOI: 10.1117/12.705272 |
0.589 |
|
| 2007 |
Tierney BD, Goodnick SM. Monte Carlo simulation of spin-polarized transport in GaAs nanostructures 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 414-417. DOI: 10.1109/NANO.2007.4601222 |
0.771 |
|
| 2007 |
Ashok A, Vasileska D, Hartin O, Goodnick SM. Monte Carlo simulation of GaN n+nn+ diode including intercarrier interactions 2007 7th Ieee International Conference On Nanotechnology - Ieee-Nano 2007, Proceedings. 338-341. DOI: 10.1109/NANO.2007.4601203 |
0.564 |
|
| 2007 |
Raleva K, Vasileska D, Goodnick SM. The role of the temperature boundary conditions on the gate electrode on the heat distribution in 25 nm FD-SOI MOSFETs with SiO2 and gate-stack (high-k dielectric) as the gate oxide 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422323 |
0.459 |
|
| 2006 |
Vasileska D, Goodnick SM. Computational electronics Synthesis Lectures On Computational Electromagnetics. 6: 1-216. DOI: 10.2200/S00026ED1V01Y200605CEM006 |
0.56 |
|
| 2006 |
Ramayya E, Vasileska D, Goodnick SM, Knezevic I. Electron transport in Si nanowires Journal of Physics: Conference Series. 38: 126-129. DOI: 10.1088/1742-6596/38/1/031 |
0.671 |
|
| 2006 |
Shailos A, Ashok A, Bird JP, Akis R, Ferry DK, Goodnick SM, Lilly MP, Reno JL, Simmons JA. Linear conductance of quantum point contacts with deliberately broken symmetry Journal of Physics Condensed Matter. 18: 1715-1724. DOI: 10.1088/0953-8984/18/5/024 |
0.612 |
|
| 2006 |
Faralli N, Markandeya H, Branlard J, Saraniti M, Goodnick SM, Ferry DK. Full-band particle-based simulation of 85 nm AlInSb/InSb quantum well transistors Journal of Computational Electronics. 5: 483-486. DOI: 10.1007/S10825-006-0061-2 |
0.334 |
|
| 2006 |
Ayubi-Moak JS, Goodnick SM, Saraniti M. Global modeling of high frequency devices Journal of Computational Electronics. 5: 415-418. DOI: 10.1007/S10825-006-0028-3 |
0.378 |
|
| 2005 |
Hussein YA, El-Ghazaly SM, Goodnick SM. Efficient modeling of PIN diode switches employing time-domain electromagnetic-physics-based simulators Ieee Mtt-S International Microwave Symposium Digest. 2005: 325-328. DOI: 10.1109/MWSYM.2005.1516592 |
0.631 |
|
| 2005 |
Yamakawa S, Barker JM, Goodnick SM, Ferry DK, Saraniti M. Electron-phonon interaction of Wurtzite GaN and its effect on high field transport Aip Conference Proceedings. 772: 227-228. DOI: 10.1063/1.1994076 |
0.545 |
|
| 2005 |
Yamakawa S, Goodnick SM, Branlard J, Saraniti M. Frequency analysis of GaN MESFETs using full-band cellular Monte Carlo Physica Status Solidi C: Conferences. 2: 2573-2576. DOI: 10.1002/Pssc.200461525 |
0.613 |
|
| 2005 |
Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. High-field electron transport in AlGaN/GaN heterostructures Physica Status Solidi C: Conferences. 2: 2564-2568. DOI: 10.1002/Pssc.200461384 |
0.539 |
|
| 2004 |
Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. High field transport in GaN/AlGaN heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2045-2050. DOI: 10.1116/1.1775199 |
0.53 |
|
| 2004 |
Barker JM, Ferry DK, Goodnick SM, Koleske DD, Allerman A, Shul RJ. Effects of surface treatment on the velocity-field characteristics of AlGaN/GaN heterostructures Semiconductor Science and Technology. 19: S478-S480. DOI: 10.1088/0268-1242/19/4/157 |
0.484 |
|
| 2004 |
Yamakawa S, Aboud S, Saraniti M, Goodnick SM. Influence of the electron-phonon interaction on electron transport in wurtzite GaN Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/156 |
0.557 |
|
| 2004 |
Aboud S, Saraniti M, Goodnick S, Brodschelm A, Leitenstorfer A. Full-band Monte Carlo simulations of photo excitation in silicon diode structures Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/4/101 |
0.431 |
|
| 2004 |
Yamakawa S, Goodnick S, Aboud S, Saraniti M. Quantum corrected full-band cellular Monte Carlo simulation of AlGaN/GaN HEMTs Journal of Computational Electronics. 3: 299-303. DOI: 10.1007/s10825-004-7065-6 |
0.622 |
|
| 2004 |
Beysserie S, Aboud S, Goodnick S, Thornton T, Saraniti M. Full-band particle-based simulation of SOI and GOI MOSFETs Physica Status Solidi (B) Basic Research. 241: 2297-2302. DOI: 10.1002/Pssb.200404940 |
0.479 |
|
| 2004 |
Gerousis CP, Goodnick SM, Porod W. Nanoelectronic single-electron transistor circuits and architectures International Journal of Circuit Theory and Applications. 32: 323-338. DOI: 10.1002/Cta.284 |
0.774 |
|
| 2004 |
Branlard J, Aboud S, Osuch P, Goodnick S, Saraniti M. Frequency analysis of semiconductor devices using full-band cellular Monte Carlo simulations Monte Carlo Methods and Applications. 10: 227-233. |
0.324 |
|
| 2003 |
Goodnick SM, Bird J. Quantum-effect and single-electron devices Ieee Transactions On Nanotechnology. 2: 368-385. DOI: 10.1109/Tnano.2003.820773 |
0.305 |
|
| 2003 |
Hussein YA, El-Ghazaly SM, Goodnick SM. An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors Ieee Transactions On Microwave Theory and Techniques. 51: 2334-2346. DOI: 10.1109/TMTT.2003.820160 |
0.639 |
|
| 2003 |
Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. A model for many-body interaction effects in open quantum dot systems Journal of Physics Condensed Matter. 15: 147-158. DOI: 10.1088/0953-8984/15/2/314 |
0.526 |
|
| 2003 |
Branlard J, Aboud S, Goodnick S, Saraniti M. Frequency Analysis of 3D GaAs MESFET Structures Using Full-Band Particle-Based Simulations Journal of Computational Electronics. 2: 213-217. DOI: 10.1023/B:Jcel.0000011427.63034.4E |
0.367 |
|
| 2003 |
Ayubi-Moak JS, Goodnick S, Aboud SJ, Saraniti M, El-Ghazaly S. Coupling Maxwell's Equations to Full Band Particle-Based Simulators Journal of Computational Electronics. 2: 183-190. DOI: 10.1023/B:Jcel.0000011422.05617.F1 |
0.348 |
|
| 2003 |
Naser B, Cho K, Hwang S, Bird J, Ferry D, Goodnick S, Park B, Ahn D. Transport study of ultra-thin SOI MOSFETs Physica E: Low-Dimensional Systems and Nanostructures. 19: 39-43. DOI: 10.1016/S1386-9477(03)00326-6 |
0.365 |
|
| 2003 |
Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. A model for interaction corrections to transport through open quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 19: 206-209. DOI: 10.1016/S1386-9477(03)00309-6 |
0.53 |
|
| 2003 |
Krishnaswamy AE, Bird JP, Goodnick SM. Non-invasive study of transport in open quantum dot structures Physica E: Low-Dimensional Systems and Nanostructures. 19: 202-205. DOI: 10.1016/S1386-9477(03)00308-4 |
0.334 |
|
| 2003 |
Chakraborty PS, McCartney MR, Li J, Gopalan C, Singisetti U, Goodnick SM, Thornton TJ, Kozicki MN. Electron holographic characterization of nanoscale charge distributions for ultra shallow PN junctions in Si Physica E: Low-Dimensional Systems and Nanostructures. 19: 167-172. DOI: 10.1016/S1386-9477(03)00302-3 |
0.388 |
|
| 2003 |
Saraniti M, Tang J, Goodnick SM, Wigger SJ. Numerical challenges in particle-based approaches for the simulation of semiconductor devices Mathematics and Computers in Simulation. 62: 501-508. DOI: 10.1016/S0378-4754(02)00229-X |
0.805 |
|
| 2003 |
Singisetti U, McCartney MR, Li J, Chakraborty PS, Goodnick SM, Kozicki MN, Thornton TJ. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs Superlattices and Microstructures. 34: 301-310. DOI: 10.1016/J.Spmi.2004.03.020 |
0.338 |
|
| 2003 |
Hussein YA, El-Ghazaly SM, Goodnick SM. Electromagnetic-wave effects on closely packed microwave transistors using a fast time-domain simulation approach Ieee Mtt-S International Microwave Symposium Digest. 2: 989-992. |
0.617 |
|
| 2003 |
Hussein YA, El-Ghazaly SM, Goodnick SM. A new wavelet-based technique for fast full-wave physical simulations of millimeter-wave transistors Ieee Mtt-S International Microwave Symposium Digest. 1: 17-20. |
0.62 |
|
| 2002 |
Saraniti M, Hu Y, Goodnick SM. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP Vlsi Design. 15: 743-750. DOI: 10.1080/1065514021000012354 |
0.315 |
|
| 2002 |
Indlekofer KM, Bird JP, Akis R, Ferry DK, Goodnick SM. Interaction corrections to transport due to quasibound states in open quantum dots Applied Physics Letters. 81: 3861-3863. DOI: 10.1063/1.1521584 |
0.344 |
|
| 2002 |
Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband Particle-Based Simulation of High-Field Transient Transport in III–V Semiconductors Journal of Computational Electronics. 1: 475-480. DOI: 10.1023/A:1022945122145 |
0.452 |
|
| 2002 |
Saraniti M, Tang J, Goodnick S, Wigger S. Parallel Approaches for Particle-Based Simulation of Charge Transport in Semiconductors Journal of Computational Electronics. 1: 215-218. DOI: 10.1023/A:1020777508605 |
0.307 |
|
| 2002 |
Bird J, Ferry D, Goodnick S. Physica B: Condensed Matter - Preface Physica B: Condensed Matter. 314. DOI: 10.1016/S0921-4526(02)00911-0 |
0.398 |
|
| 2002 |
Barker JM, Akis R, Ferry DK, Goodnick SM, Thornton TJ, Koleske DD, Wickenden AE, Henry RL. High-field transport studies of GaN Physica B: Condensed Matter. 314: 39-41. DOI: 10.1016/S0921-4526(01)01453-3 |
0.334 |
|
| 2002 |
Reigrotzki M, Madureira J, Kuligk A, Fitzer N, Redmer R, Goodnick S, Dür M, Schattke W. Impact ionization and high-field effects in wide-band-gap semiconductors Physica B: Condensed Matter. 314: 52-54. DOI: 10.1016/S0921-4526(01)01381-3 |
0.358 |
|
| 2002 |
Saraniti M, Hu Y, Goodnick SM, Wigger SJ. Overshoot velocity in ultra-broadband THz studies in GaAs and InP Physica B: Condensed Matter. 314: 162-165. DOI: 10.1016/S0921-4526(01)01377-1 |
0.799 |
|
| 2002 |
Akis R, Dür M, Goodnick SM. The electron-phonon scattering rate of zinc blende GaN Physica B: Condensed Matter. 314: 42-46. DOI: 10.1016/S0921-4526(01)01365-5 |
0.333 |
|
| 2002 |
Barker JM, Ferry DK, Goodnick SM, Koleske DD, Wickenden AE, Henry RL. Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures Microelectronic Engineering. 63: 193-197. DOI: 10.1016/S0167-9317(02)00627-5 |
0.395 |
|
| 2002 |
Barker JM, Akis R, Thornton TJ, Ferry DK, Goodnick SM. High field transport studies of GaN Physica Status Solidi (a) Applied Research. 190: 263-270. DOI: 10.1002/1521-396X(200203)190:1<263::Aid-Pssa263>3.0.Co;2-U |
0.392 |
|
| 2002 |
Gerousis CP, Goodnick SM. Simulation of single-electron tunneling circuits Physica Status Solidi (B) Basic Research. 233: 113-126. DOI: 10.1002/1521-3951(200209)233:1<113::Aid-Pssb113>3.0.Co;2-A |
0.774 |
|
| 2002 |
Waliullah M, El-Ghazaly SM, Goodnick S. Large-signal circuit-based time domain analysis of high frequency devices including distributed effects Ieee Mtt-S International Microwave Symposium Digest. 3: 2145-2148. |
0.786 |
|
| 2002 |
Wigger S, Saraniti M, Goodnick S, Leitenstorfer A. Fullband particle-based simulation of high-field transient transport in III-V semiconductors 2002 International Conference On Modeling and Simulation of Microsystems - Msm 2002. 564-567. |
0.312 |
|
| 2001 |
Ferry D, Khoury M, Gerousis C, Rack M, Gunther A, Goodnick S. Single-electron charging effects in Si MOS devices Physica E: Low-Dimensional Systems and Nanostructures. 9: 69-75. DOI: 10.1016/S1386-9477(00)00179-X |
0.787 |
|
| 2001 |
El-Ghazaly SM, Nair V, Goodnick S. Recent trends and enabling technologies in RF and microwave applications Asia-Pacific Microwave Conference Proceedings, Apmc. 3: 978-983. |
0.595 |
|
| 2001 |
Wigger SJ, Goodnick SM, Saraniti M. Hybrid particle-based full-band analysis of ultra-small MOS Vlsi Design. 13: 125-129. |
0.794 |
|
| 2001 |
Speyer G, Vasileska D, Goodnick SM. Efficient Poisson equation solvers for large scale 3D simulations 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 23-26. |
0.55 |
|
| 2000 |
Shatalov A, Subramanian S, Dentai A, Chadrasekhar S, Goodnick S. Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors Journal of Applied Physics. 88: 3765-3767. DOI: 10.1063/1.1288778 |
0.335 |
|
| 2000 |
Dür M, Goodnick SM. Electron energy relaxation in silicon quantum dots by acoustic and optical phonon scattering Physica E: Low-Dimensional Systems and Nanostructures. 7: 233-236. DOI: 10.1016/S1386-9477(99)00316-1 |
0.301 |
|
| 2000 |
Khoury M, Gunther A, Miličić S, Rack J, Goodnick S, Vasileska D, Thornton T, Ferry D. Single-electron quantum dots in silicon MOS structures Applied Physics a: Materials Science & Processing. 71: 415-421. DOI: 10.1007/S003390000554 |
0.578 |
|
| 2000 |
Miličić S, Akis R, Vasileska D, Gunther A, Goodnick S. 3D modeling of discrete impurity effects in silicon quantum dots: energy level spacing and scarring effects Superlattices and Microstructures. 28: 461-467. DOI: 10.1006/Spmi.2000.0949 |
0.552 |
|
| 2000 |
Wigger SJ, Goodnick SM, Saraniti M. Full-band CA/Monte Carlo modeling of ultrasmall FETs Superlattices and Microstructures. 27: 417-420. DOI: 10.1006/Spmi.2000.0860 |
0.783 |
|
| 2000 |
Miličić S, Badrieh F, Vasileska D, Gunther A, Goodnick S. 3D modeling of silicon quantum dots Superlattices and Microstructures. 27: 377-382. DOI: 10.1006/Spmi.2000.0845 |
0.586 |
|
| 2000 |
Gunther A, Khoury M, Miličić S, Vasileska D, Thornton T, Goodnick S. Transport in split-gate silicon quantum dots Superlattices and Microstructures. 27: 373-376. DOI: 10.1006/Spmi.2000.0844 |
0.581 |
|
| 2000 |
Saraniti M, Goodnick SM, Wigger SJ. Hybrid CA/Monte Carlo modeling of charge transport in semiconductors 2000 International Conference On Modeling and Simulation of Microsystems - Msm 2000. 457-460. |
0.807 |
|
| 1999 |
Grondin RO, El-Ghazaly SM, Goodnick S. A review of global modeling of charge transport in semiconductors and full-wave electromagnetics Ieee Transactions On Microwave Theory and Techniques. 47: 817-829. DOI: 10.1109/22.769315 |
0.648 |
|
| 1999 |
Dür M, Gunther AD, Vasileska D, Goodnick SM. Acoustic phonon scattering in silicon quantum dots Nanotechnology. 10: 142-146. DOI: 10.1088/0957-4484/10/2/307 |
0.513 |
|
| 1999 |
Ferry DK, Goodnick SM, Hess K. Energy exchange in single-particle electron-electron scattering Physica B: Condensed Matter. 272: 538-541. DOI: 10.1016/S0921-4526(99)00335-X |
0.521 |
|
| 1999 |
Bandyopadhyay A, Subramanian S, Chandrasekhar S, Dentai A, Goodnick S. Degradation of InGaAs/InP single heterojunction bipolar transistors under high energy electron irradiation Microelectronics Reliability. 39: 333-339. DOI: 10.1016/S0026-2714(99)00004-9 |
0.333 |
|
| 1998 |
Ferry DK, Goodnick SM. Monte Carlo simulations in optical devices: Some successes and some problems Proceedings of Spie - the International Society For Optical Engineering. 3283: 366-374. DOI: 10.1117/12.316670 |
0.538 |
|
| 1998 |
Ferry DK, Goodnick SM. Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors Proceedings of Spie - the International Society For Optical Engineering. 3277: 10-17. DOI: 10.1117/12.306149 |
0.528 |
|
| 1998 |
Saraniti M, Zandler G, Formicone G, Wigger S, Goodnick S. Cellular automata simulation of nanometre-scale MOSFETs Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/050 |
0.401 |
|
| 1998 |
Dür M, Goodnick SM. Interface effects on intersubband carrier relaxation in GaAs/AlGaAs quantum wells Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/041 |
0.409 |
|
| 1998 |
Vasileska D, Wybourne MN, Goodnick SM, Gunther AD. 3D simulation of GaAs/AlGaAs quantum dot point contact structures Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/013 |
0.597 |
|
| 1998 |
Pennathur S, Sandalci CK, Koç CK, Goodnick SM. 3D parallel Monte Carlo simulation of GaAs MESFETs Vlsi Design. 6: 273-276. |
0.313 |
|
| 1997 |
Smith JC, Wybourne MN, Berven C, Ramasubramaniam R, Goodnick SM. Temporal instabilities in the far-from-equilibrium transport of quantum point contacts Europhysics Letters (Epl). 39: 73-78. DOI: 10.1209/Epl/I1997-00316-7 |
0.319 |
|
| 1997 |
Sandalci CK, Koç ÇK, Goodnick S. Three-Dimensional Monte Carlo Device Simulation with Parallel Multigrid Solver International Journal of High Speed Computing. 9: 223-236. DOI: 10.1142/S0129053397000143 |
0.361 |
|
| 1997 |
Reigrotzki M, Dür M, Schattke W, Fitzer N, Redmer R, Goodnick S. High-Field Transport and Impact Ionization in Wide Bandgap Semiconductors Physica Status Solidi (B). 204: 528-530. DOI: 10.1002/1521-3951(199711)204:1<528::Aid-Pssb528>3.0.Co;2-J |
0.311 |
|
| 1997 |
Dür M, Goodnick S, Lugli P. Monte Carlo Studies of Intersubband Relaxation in Wide GaAs/AlGaAs Quantum Wells Physica Status Solidi (B). 204: 170-173. DOI: 10.1002/1521-3951(199711)204:1<170::Aid-Pssb170>3.0.Co;2-A |
0.338 |
|
| 1996 |
Smith JC, Berven C, Goodnick SM, Wybourne MN. Nonequilibrium random telegraph switching in quantum point contacts Physica B: Condensed Matter. 227: 197-201. DOI: 10.1016/0921-4526(96)00398-5 |
0.366 |
|
| 1996 |
Wybourne M, Smith JC, Berven C, Ramasubramaniam R, Goodnick S. Instabilities in quantum point contact structures Superlattices and Microstructures. 20: 419-425. DOI: 10.1006/Spmi.1996.0098 |
0.361 |
|
| 1995 |
Ang WM, Pennathur S, Pham L, Wager JF, Goodnick SM, Douglas AA. Evidence for band-to-band impact ionization in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices Journal of Applied Physics. 77: 2719-2724. DOI: 10.1063/1.358741 |
0.327 |
|
| 1995 |
Patel D, Menoni C, Schult D, McMahon T, Goodnick S. Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor Journal of Physics and Chemistry of Solids. 56: 669-672. DOI: 10.1016/0022-3697(94)00261-4 |
0.319 |
|
| 1993 |
Bhattacharyya K, Goodnick SM, Wager JF. Monte Carlo simulation of electron transport in alternating-current thin-film electroluminescent devices Journal of Applied Physics. 73: 3390-3395. DOI: 10.1063/1.352938 |
0.335 |
|
| 1993 |
Bhattacharyya K, Orwa JO, Goodnick SM. Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures Journal of Applied Physics. 73: 4396-4403. DOI: 10.1063/1.352777 |
0.347 |
|
| 1992 |
Rucker H, Lugli P, Goodnick SM, Lary JE. Intersubband relaxation of photoexcited carriers in asymmetric coupled quantum wells Semiconductor Science and Technology. 7. DOI: 10.1088/0268-1242/7/3B/024 |
0.368 |
|
| 1992 |
Wu JC, Wybourne MN, Berven C, Goodnick SM, Smith DD. Negative differential conductance observed in a lateral double constriction device Applied Physics Letters. 61: 2425-2427. DOI: 10.1063/1.108186 |
0.416 |
|
| 1991 |
Wu JC, Wybourne MN, Yindeepol W, Weisshaar A, Goodnick SM. Interference phenomena due to a double bend in a quantum wire Applied Physics Letters. 59: 102-104. DOI: 10.1063/1.105558 |
0.412 |
|
| 1991 |
Goodnick SM, Lary JE, Lugli P. Intersubband relaxation of hot carriers in quantum well systems Superlattices and Microstructures. 10: 461-466. DOI: 10.1016/0749-6036(91)90310-N |
0.342 |
|
| 1989 |
Lugli P, Bordone P, Reggiani L, Rieger M, Kocevar P, Goodnick S. Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation Physical Review B. 39: 7852-7865. PMID 9947468 DOI: 10.1103/Physrevb.39.7852 |
0.389 |
|
| 1989 |
Weisshaar A, Lary J, Goodnick SM, Tripathi VK. Analysis of discontinuities in quantum waveguide structures Applied Physics Letters. 55: 2114-2116. DOI: 10.1063/1.102079 |
0.333 |
|
| 1989 |
Goodnick SM, Lugli P, Knox WH, Chemla DS. Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures Solid State Electronics. 32: 1737-1741. DOI: 10.1016/0038-1101(89)90304-3 |
0.311 |
|
| 1988 |
Goodnick SM, Lugli P. Monte Carlo Simulation of Sub-Picosecond Phenomena in Semiconductor Quantum Wells and Superlattices Proceedings of Spie - the International Society For Optical Engineering. 943: 92-101. DOI: 10.1117/12.947296 |
0.321 |
|
| 1988 |
Goodnick SM, Lugli P. Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems Physical Review B. 37: 2578-2588. DOI: 10.1103/Physrevb.37.2578 |
0.395 |
|
| 1987 |
Lugli P, Goodnick SM. Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells Physical Review Letters. 59: 716-719. DOI: 10.1103/Physrevlett.59.716 |
0.375 |
|
| 1987 |
Goodnick SM, Lugli P. Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells Applied Physics Letters. 51: 584-586. DOI: 10.1063/1.98355 |
0.409 |
|
| 1986 |
Lugli P, Goodnick S, Koch F. Monte Carlo study of hot electrons in quantum wells Superlattices and Microstructures. 2: 335-338. DOI: 10.1016/0749-6036(86)90043-1 |
0.42 |
|
| 1983 |
Goodnick SM, Gann RG, Sites JR, Ferry DK, Wilmsen CW, Fathy D, Krivanek OL. SURFACE ROUGHNESS SCATTERING AT THE Si-SiO//2 INTERFACE Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 803-808. DOI: 10.1116/1.582696 |
0.336 |
|
| 1983 |
Goodnick SE, Porod W, Grondin RO, Goodnick SM, Wilmsen CW, Ferry DK. MONTE CARLO STUDY OF Si(111) SURFACE OXIDATION Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1: 767-772. DOI: 10.1116/1.582689 |
0.394 |
|
| 1983 |
Goodnick SM, Sites JR, Yi KS, Ferry DK, Wilmsen CW. Valley splitting on tilted Si(100) surfaces Physics Letters A. 97: 111-113. DOI: 10.1016/0375-9601(83)90526-1 |
0.385 |
|
| 1983 |
Goodnick SM, Ferry DK. Electron transport in inversion and accumulation layers of III-V compounds Thin Solid Films. 103: 27-46. DOI: 10.1016/0040-6090(83)90422-4 |
0.488 |
|
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