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Fransiska Dwikusuma, Ph.D. - Publications

Affiliations: 
2003 University of Wisconsin, Madison, Madison, WI 
Area:
Materials Science Engineering, Chemical Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Dwikusuma F, Kuech TF. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Journal of Applied Physics. 94: 5656-5664. DOI: 10.1063/1.1618357  0.539
2003 Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256. DOI: 10.1063/1.1573351  0.535
2003 Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74. DOI: 10.1016/S0022-0248(03)01506-9  0.575
2003 Dwikusuma F, Kuech TF. The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy Materials Research Society Symposium - Proceedings. 764: 57-62.  0.567
2002 Dwikusuma F, Saulys D, Kuech TF. Study on chemical treatment and high temperature nitridation of sapphire for III-nitride heteroepitaxial growth Materials Research Society Symposium - Proceedings. 743: 67-72. DOI: 10.1557/Proc-743-L3.4  0.595
2002 Dwikusuma F, Saulys D, Kuech TF. Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1509072  0.581
2002 Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, Kuech TF. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN Journal of Applied Physics. 92: 6671-6678. DOI: 10.1063/1.1518129  0.507
2001 Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Dwikusuma F, Kuech TF. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy Journal of Crystal Growth. 231: 342-351. DOI: 10.1016/S0022-0248(01)01464-6  0.513
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