Year |
Citation |
Score |
2017 |
Narayanan S, Dutta D, Arora N, Sahoo L, Ghosh SS. Phytaspase-loaded, Mn-doped ZnS quantum dots when embedded into chitosan nanoparticles leads to improved chemotherapy of HeLa cells using in cisplatin. Biotechnology Letters. PMID 28730426 DOI: 10.1007/s10529-017-2395-1 |
0.336 |
|
2013 |
Saha AK, Sharma P, Sohn HB, Ghosh S, Das RK, Hebard AF, Zeng H, Baligand C, Walter GA, Moudgil BM. Fe Doped CdTeS Magnetic Quantum Dots for Bioimaging. Journal of Materials Chemistry. B, Materials For Biology and Medicine. 1: 6312-6320. PMID 24634776 DOI: 10.1039/C3Tb20859A |
0.314 |
|
2011 |
Banerjee K, Huang J, Ghosh S, Xu R, Takoudis CG, Plis E, Krishna S, Ketharanathan S, Chriss M. Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.900198 |
0.391 |
|
2010 |
Ray M, Hossain SM, Klie RF, Banerjee K, Ghosh S. Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology. 21: 505602. PMID 21098931 DOI: 10.1088/0957-4484/21/50/505602 |
0.376 |
|
2010 |
Ghosh S, Banerjee K, Duan Q, Grein CH, Plis EA, Krishna S, Hayat MM. Dual-carrier multiplication high-gain MWIR strain layer superlattice impact ionization engineered avalanche photodiodes Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.858012 |
0.451 |
|
2010 |
Banerjee K, Ghosh S, Plis E, Krishna S. Study of short-and long-term effectiveness of ammonium sulfide as surface passivation for InAs/GaSb superlattices using X-ray photoelectron spectroscopy Journal of Electronic Materials. 39: 2210-2214. DOI: 10.1007/S11664-010-1298-X |
0.367 |
|
2009 |
Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S, Grein C. Midwave infrared InAs/GaSb strained layer superlattice hole avalanche photodiode Applied Physics Letters. 94. DOI: 10.1063/1.3139012 |
0.472 |
|
2009 |
Banerjee K, Ghosh S, Mallick S, Plis E, Krishna S. Electrical characterization of different passivation treatments for long-wave infrared InAs/GaSb strained layer superlattice photodiodes Journal of Electronic Materials. 38: 1944-1947. DOI: 10.1007/S11664-009-0850-Z |
0.415 |
|
2008 |
Banerjee K, Mallick S, Ghosh S, Plis E, Krishna S, Grein C. Hole initiated mid wave infrared InAs/GaSb strained layer superlattice avalanche photodiode Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 298-299. DOI: 10.1109/LEOS.2008.4688608 |
0.401 |
|
2008 |
Plis E, Kim HS, Bishop G, Krishna S, Banerjee K, Ghosh S. Lateral diffusion of minority carriers in nBn based type-II InAs/GaSb strained layer superlattice detectors Applied Physics Letters. 93. DOI: 10.1063/1.2990049 |
0.432 |
|
2008 |
Rupani RA, Ghosh S, Su X, Bhattacharya P. Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors Microelectronics Journal. 39: 307-313. DOI: 10.1016/J.Mejo.2007.07.108 |
0.578 |
|
2008 |
Ghosh S, Mallick S, Banerjee K, Grein C, Velicu S, Zhao J, Silversmith D, Rodriguez JB, Plis E, Krishna S. Low-noise mid-wavelength infrared avalanche photodiodes Journal of Electronic Materials. 37: 1764-1769. DOI: 10.1007/S11664-008-0542-0 |
0.438 |
|
2007 |
Mallick S, Banerjee K, Ghosh S, Plis E, Rodriguez JB, Krishna S, Grein C. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode Applied Physics Letters. 91. DOI: 10.1063/1.2817608 |
0.463 |
|
2004 |
Bhattacharya P, Ghosh S, Stiff-Roberts AD. Quantum dot opto-electronic devices Annual Review of Materials Research. 34: 1-40. DOI: 10.1146/Annurev.Matsci.34.040203.111535 |
0.728 |
|
2004 |
Fathpour S, Bhattacharya P, Ghosh S. Low linewidth enhancement factor and chirp and suppressed filamentation in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers Proceedings of Spie - the International Society For Optical Engineering. 5361: 29-34. DOI: 10.1117/12.537972 |
0.683 |
|
2004 |
Topol'ančik J, Pradhan S, Yu PC, Ghosh S, Bhattacharya P. Electrically injected photonic crystal edge-emitting quantum-dot light source Ieee Photonics Technology Letters. 16: 960-962. DOI: 10.1109/Lpt.2004.824657 |
0.678 |
|
2004 |
Lenihan AS, Dutt MVG, Steel DG, Ghosh S, Bhattacharya P. Biexcitonic resonance in the nonlinear optical response of an InAs quantum dot ensemble Physical Review B - Condensed Matter and Materials Physics. 69: 453061-453066. DOI: 10.1103/Physrevb.69.045306 |
0.467 |
|
2004 |
Holub M, Chakrabarti S, Fathpour S, Bhattacharya P, Lei Y, Ghosh S. Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K Applied Physics Letters. 85: 973-975. DOI: 10.1063/1.1781361 |
0.737 |
|
2004 |
Farina LA, Lewis KM, Kurdak C, Ghosh S, Krishna S, Bhattacharya P. Drag coupling between a thin Al film and a two-dimensional electron gas near the superconducting transition Physica E: Low-Dimensional Systems and Nanostructures. 22: 341-344. DOI: 10.1016/J.Physe.2003.12.016 |
0.419 |
|
2003 |
Bhattacharya P, Ghosh S. High-Speed Tunnel Injection InGaAs/GaAs Quantum Dot Lasers Proceedings of Spie - the International Society For Optical Engineering. 4986: 1-10. DOI: 10.1117/12.482327 |
0.392 |
|
2003 |
Bhattacharya P, Ghosh S, Pradhan S, Singh J, Wu ZK, Urayama J, Kim K, Norris TB. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers Ieee Journal of Quantum Electronics. 39: 952-962. DOI: 10.1109/Jqe.2003.814374 |
0.303 |
|
2003 |
Kim K, Norris TB, Ghosh S, Singh J, Bhattacharya P. Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots Applied Physics Letters. 82: 1959-1961. DOI: 10.1063/1.1563732 |
0.454 |
|
2003 |
Fathpour S, Bhattacharya P, Pradhan S, Ghosh S. Linewidth enhancement factor and near-field pattern in tunnel injection In0.4Ga0.6As self-assembled quantum dot lasers Electronics Letters. 39: 1443-1445. DOI: 10.1049/El:20030944 |
0.688 |
|
2003 |
Kim K, Norris TB, Ghosh S, Singh J, Bhattacharya P. Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 89: QThI6/1-QThI6/2. |
0.444 |
|
2003 |
Wu ZK, Kim K, Norris TB, Ghosh S, Bhattacharya PK. Ultrafast carrier dynamics in tunneling injection quantum dot lasers Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 89: QThI2/1-QThI2/2. |
0.421 |
|
2003 |
Topolancik J, Pradhan S, Yu PC, Ghosh S, Bhattarcharya P. Electrically injected photonic crystal edge emitting quantum dot light source Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 210-211. |
0.422 |
|
2003 |
Fathpour S, Bhattacharya P, Pradhan S, Ghosh S, Topolancik J. Modulation characteristics of In0.4Ga0.6As/GaAs quantum dot gain-coupled distributed feedback lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 202-203. |
0.408 |
|
2003 |
Bhattacharya P, Fathpour S, Chakrabarti S, Holub M, Ghosh S. Application of diluted magnetic semiconductors and quantum dots to spin polarized light sources Materials Research Society Symposium - Proceedings. 794: 215-225. |
0.39 |
|
2002 |
Lenihan AS, Gurudev Dutt MV, Steel DG, Ghosh S, Bhattacharya PK. Raman coherence beats from entangled polarization eigenstates in InAs quantum dots. Physical Review Letters. 88: 223601. PMID 12059418 DOI: 10.1103/Physrevlett.88.223601 |
0.614 |
|
2002 |
Ghosh S, Bhattacharya P. Electrical spin injection into In0.4Ga0.6As/GaAs quantum dots using (Ga,Mn)As Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1182-1184. DOI: 10.1116/1.1456521 |
0.302 |
|
2002 |
Ghosh S, Bhattacharya P, Wu ZK, Norris T, Singh J, Kochman B. Quantum dot tunnel injection lasers with large modulation bandwidth at room temperature Device Research Conference - Conference Digest, Drc. 2002: 137-138. DOI: 10.1109/DRC.2002.1029554 |
0.422 |
|
2002 |
Bhattacharya P, Ghosh S, Wu ZK, Norris T. High speed quantum dot lasers Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2002: 17-23. DOI: 10.1109/COMMAD.2002.1237179 |
0.469 |
|
2002 |
Kochman B, Ghosh S, Singh J, Bhattacharya P. Lateral hopping conductivity and large negative magnetoresistance in InAs/AlGaAs self-organized quantum dots Journal of Physics D: Applied Physics. 35: L65-L68. DOI: 10.1088/0022-3727/35/15/101 |
0.732 |
|
2002 |
Ghosh S, Pradhan S, Bhattacharya P. Dynamic characteristics of high-speed In0.4Ga 0.6As/GaAs self-organized quantum dot lasers at room temperature Applied Physics Letters. 81: 3055-3057. DOI: 10.1063/1.1514823 |
0.436 |
|
2002 |
Bhattacharya P, Ghosh S. Response to "comment on 'Tunnel injection In0.4Ga 0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature'" [Appl. Phys. Lett. 81, 2659 (2002)] Applied Physics Letters. 81: 2661-2662. DOI: 10.1063/1.1510944 |
0.383 |
|
2002 |
Bhattacharya P, Ghosh S. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature Applied Physics Letters. 80: 3482-3484. DOI: 10.1063/1.1478129 |
0.442 |
|
2002 |
Ghosh S, Bhattacharya P. Surface-emitting spin-polarized In0.4Ga0.6As/GaAs quantum-dot light-emitting diode Applied Physics Letters. 80: 658-660. DOI: 10.1063/1.1436526 |
0.318 |
|
2002 |
Pradhan S, Ghosh S, Bhattacharya P. Temperature dependent steady-state characteristics of high-performance tunnel injection quantum dot lasers Electronics Letters. 38: 1449-1450. DOI: 10.1049/el:20020835 |
0.352 |
|
2002 |
Kochman B, Ghosh S, Singh J, Bhattacharya P. In-plane velocity-field characteristics of InAs self-assembled quantum dot layers Electronics Letters. 38: 752-753. DOI: 10.1049/El:20020504 |
0.743 |
|
2002 |
Bhattacharya P, Ghosh S. Spin polarized quantum dot light emitters Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 19-20. |
0.486 |
|
2002 |
Pradhan S, Ghosh S, Bhattacharya P. Modulation characteristics of high-speed tunnel injection In0.4Ga0.6As quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 27-28. |
0.457 |
|
2002 |
Ghosh S, Bhattacharya P, Urayama J, Wu ZK, Norris T, Kamath KK. Tunnel injection quantum dot lasers Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 543. |
0.463 |
|
2001 |
Ghosh S, Lenihan AS, Dutt MVG, Qasaimeh O, Steel DG, Bhattacharya P. Nonlinear optical and electro-optic properties of InAs/GaAs self-organized quantum dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1455-1458. DOI: 10.1116/1.1374623 |
0.696 |
|
2001 |
Lenihan AS, Dutt MVG, Steel DG, Ghosh S, Bhattacharya PK. Spin relaxation in InAs quantum dots probed by transient nonlinear optical spectroscopy Technical Digest - Summaries of Papers Presented At the Quantum Electronics and Laser Science Conference, Qels 2001. 5-6. DOI: 10.1109/QELS.2001.961773 |
0.347 |
|
2001 |
Ghosh S, Bhattacharya P, Stoner E, Singh J, Jiang H, Nuttinck S, Laskar J. Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots Applied Physics Letters. 79: 722-724. DOI: 10.1063/1.139140 |
0.498 |
|
2001 |
Ghosh S, Bhattacharya P, Stoner E, Jiang H, Nuttinck S, Singh J, Laskar J. Temperature-dependent large signal modulation and Auger recombination in In0.4Ga0.6As quantum-dot lasers Annual Device Research Conference Digest. 39-40. |
0.465 |
|
2000 |
Ghosh S, Kochman B, Singh J, Bhattacharya P. Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy Applied Physics Letters. 76: 2571-2573. |
0.447 |
|
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