Hasan Sharifi, Ph.D. - Publications
Affiliations: | 2007 | Electrical and Computer Engineering | Purdue University, West Lafayette, IN, United States |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2010 | Lahiji RR, Sharifi H, Katehi LPB, Mohammadi S. 3-D CMOS circuits based on low-loss vertical interconnects on parylene-N Ieee Transactions On Microwave Theory and Techniques. 58: 48-56. DOI: 10.1109/Tmtt.2009.2036394 | 0.578 | |||
2009 | Sharifi H, Lahiji RR, Lin HC, Ye PD, Katehi LPB, Mohammadi S. Characterization of parylene-N as flexible substrate and passivation layer for microwave and millimeter-wave integrated circuits Ieee Transactions On Advanced Packaging. 32: 84-92. DOI: 10.1109/Tadvp.2008.2006760 | 0.568 | |||
2008 | Sharifi H, Mohammadi S. Self-aligned wafer-level integration technology with an embedded faraday cage for substrate crosstalk suppression Microwave and Optical Technology Letters. 50: 829-832. DOI: 10.1002/Mop.23207 | 0.617 | |||
2007 | Choi TY, Sharifi H, Sigmarsson HH, Chappell WJ, Mohammadi S, Katehi LPB. 3-D integration of 10-GHz filter and CMOS receiver front-end Ieee Transactions On Microwave Theory and Techniques. 55: 2298-2305. DOI: 10.1109/Tmtt.2007.907351 | 0.628 | |||
2007 | Sharifi H, Choi TY, Mohammadi S. Self-aligned wafer-level integration technology with high-density interconnects and embedded passives Ieee Transactions On Advanced Packaging. 30: 11-18. DOI: 10.1109/Tadvp.2006.890221 | 0.581 | |||
2007 | Lin HC, Yang T, Sharifi H, Kim SK, Xuan Y, Shen T, Mohammadi S, Ye PD. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 91: 212101. DOI: 10.1063/1.2814052 | 0.548 | |||
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