Jaehee Bak, Ph.D.

University of Toronto, Toronto, ON, Canada 
Syntax, Niuean
"Jaehee Bak"


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Diane Massam grad student 2011 University of Toronto
 (The Light Verb Construction in Korean.)
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Bak JY, Kang Y, Yang S, et al. (2015) Origin of degradation phenomenon under drain bias stress for oxide thin film transistors using IGZO and IGO channel layers. Scientific Reports. 5: 7884
Kim EJ, Bak JY, Choi JS, et al. (2015) Effect of mid-annealing process on the device characteristics of the TFT using AL-doped ZnO active channels prepared by atomic layer deposition Japanese Journal of Applied Physics. 54: 03CB01
Kim KA, Bak JY, Yoon SM, et al. (2015) Thickness modulation effects of Al2O3 capping layers on device performance for the top-gate thin-film transistors using solution-processed poly(4-vinyl phenol)/Zn-Sn-O gate stacks Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33
Park MJ, Yun DJ, Ryu MK, et al. (2015) Improvements in the bending performance and bias stability of flexible InGaZnO thin film transistors and optimum barrier structures for plastic poly(ethylene naphthalate) substrates Journal of Materials Chemistry C. 3: 4779-4786
Bak JY, Kim SJ, Byun CW, et al. (2015) Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors Solid-State Electronics. 111: 153-160
Bak JG, Kim HS, Bae MK, et al. (2015) Investigation of SOL parameters and divertor particle flux from electric probe measurements in KSTAR Journal of Nuclear Materials. 463: 424-427
Bang E, Hong SH, Bak J, et al. (2015) The comparison of heat flux pattern on lower divertor in KSTAR Fusion Engineering and Design. 98: 1276-1280
Kim K, Na YS, Kim M, et al. (2015) Experiment and simulation of tearing mode evolution with electron cyclotron current drive in KSTAR Current Applied Physics. 15: 547-554
Hong SH, Kim KM, Song JH, et al. (2015) Toward tungsten plasma-facing components in kstar: Research on plasma-metal wall interaction Fusion Science and Technology. 68: 36-43
Park MJ, Bak JY, Choi JS, et al. (2014) Impact of aluminum incorporation into In-Zn-O active channel for highly-stable thin-film transistor using solution process Ecs Solid State Letters. 3: Q44-Q46
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