Yibo Nian, Ph.D.
Affiliations: | 2006 | University of Houston, Houston, TX, United States |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringGoogle:
"Yibo Nian"Mean distance: (not calculated yet)
Parents
Sign in to add mentor| Alex Ignatiev | grad student | 2006 | University of Houston | |
| (Non-volatile memory based on transition metal perovskite oxide resistance switching.) | ||||
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Publications
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| Ignatiev A, Wu NJ, Chen X, et al. (2008) Resistance switching in oxide thin films Phase Transitions. 81: 791-806 |
| Nian YB, Strozier J, Wu NJ, et al. (2007) Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Physical Review Letters. 98: 146403 |
| Ignatiev A, Wu N, Chen X, et al. (2007) Resistance Non-volatile Memory – RRAM Mrs Proceedings. 997 |
| Ignatiev A, Wu N, Chen X, et al. (2007) Resistance non-volatile memory - RRAM Materials Research Society Symposium Proceedings. 997: 181-189 |
| Chen X, Strozier J, Wu NJ, et al. (2006) A study of the symmetry properties and multi-state nature of perovskite oxide-based electrical pulse induced resistance-change devices New Journal of Physics. 8 |
| Ignatiev A, Wu NJ, Liu SQ, et al. (2006) Resistance switching memory effect in transition metal oxide thin films 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 100-103 |
| Ignatiev A, Wu NJ, Nian Y, et al. (2004) Ultra-radiation hard computer memory for space exploration International Astronautical Federation - 55th International Astronautical Congress 2004. 4: 2099-2103 |