| Year |
Citation |
Score |
| 2011 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. High-mobility Ge N-MOSFETs and mobility degradation mechanisms Ieee Transactions On Electron Devices. 58: 59-66. DOI: 10.1109/Ted.2010.2088124 |
0.516 |
|
| 2011 |
Hu J, Nainani A, Sun Y, Saraswat KC, Philip Wong HS. Impact of fixed charge on metal-insulator-semiconductor barrier height reduction Applied Physics Letters. 99. DOI: 10.1063/1.3669414 |
0.301 |
|
| 2011 |
Swaminathan S, Sun Y, Pianetta P, McIntyre PC. Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties Journal of Applied Physics. 110. DOI: 10.1063/1.3647761 |
0.547 |
|
| 2011 |
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett BR, Brad Boos J, Saraswat KC. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning Journal of Applied Physics. 109. DOI: 10.1063/1.3590167 |
0.582 |
|
| 2011 |
Yuan Z, Nainani A, Sun Y, Lin JYJ, Pianetta P, Saraswat KC. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance Applied Physics Letters. 98. DOI: 10.1063/1.3584862 |
0.512 |
|
| 2011 |
Lin JYJ, Roy AM, Nainani A, Sun Y, Saraswat KC. Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height Applied Physics Letters. 98. DOI: 10.1063/1.3562305 |
0.332 |
|
| 2010 |
Schwede JW, Bargatin I, Riley DC, Hardin BE, Rosenthal SJ, Sun Y, Schmitt F, Pianetta P, Howe RT, Shen ZX, Melosh NA. Photon-enhanced thermionic emission for solar concentrator systems. Nature Materials. 9: 762-7. PMID 20676086 DOI: 10.1038/Nmat2814 |
0.497 |
|
| 2010 |
Ardalan P, Sun Y, Pianetta P, Musgrave CB, Bent SF. Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 8419-29. PMID 20433151 DOI: 10.1021/La904864C |
0.531 |
|
| 2010 |
Toyoda S, Okabayashi J, Komatsu M, Oshima M, Lee DI, Sun S, Sun Y, Pianetta PA, Kukuruznyak D, Chikyow T. Effects of Al doping and annealing on chemical states and band diagram of Y2 O3 /Si gate stacks studied by photoemission and x-ray absorption spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 16-19. DOI: 10.1116/1.3259869 |
0.665 |
|
| 2010 |
Sun Y, Liu Z, Pianetta P. The dependence of the oxidation enhancement of InP(100) surface on the coverage of the adsorbed Cs Journal of Applied Physics. 107. DOI: 10.1063/1.3452384 |
0.595 |
|
| 2010 |
Kobayashi M, Thareja G, Sun Y, Goel N, Garner M, Tsai W, Pianetta P, Nishi Y. The effects of wet surface clean and in situ interlayer on In 0.52 Al0.48 As metal-oxide-semiconductor characteristics Applied Physics Letters. 96. DOI: 10.1063/1.3379024 |
0.547 |
|
| 2009 |
Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE. Gold removal from germanium nanowires. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 9473-9. PMID 19419180 DOI: 10.1021/La900725B |
0.519 |
|
| 2009 |
Clay WA, Liu Z, Yang W, Fabbri JD, Dahl JE, Carlson RM, Sun Y, Schreiner PR, Fokin AA, Tkachenko BA, Fokina NA, Pianetta PA, Melosh N, Shen ZX. Origin of the monochromatic photoemission peak in diamondoid monolayers. Nano Letters. 9: 57-61. PMID 18975993 DOI: 10.1021/Nl802310K |
0.543 |
|
| 2009 |
Maldonado JR, Sun Y, Tsai R, Pease F, Pianetta P. Apparatus to measure electron reflection Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2644-2647. DOI: 10.1116/1.3242695 |
0.488 |
|
| 2009 |
Goel N, Gilmer DC, Park H, Diaz V, Sun Y, Price J, Park C, Pianetta P, Kirsch PD, Jammy R. Erase and retention improvements in charge trap flash through engineered charge storage layer Ieee Electron Device Letters. 30: 216-218. DOI: 10.1109/Led.2009.2012397 |
0.484 |
|
| 2009 |
Kuzum D, Krishnamohan T, Nainani A, Sun Y, Pianetta PA, Wong HSP, Saraswat KC. Experimental demonstration of high mobility Ge NMOS Technical Digest - International Electron Devices Meeting, Iedm. 19.1.1-19.1.4. DOI: 10.1109/IEDM.2009.5424322 |
0.391 |
|
| 2009 |
Kobayashi M, Thareja G, Ishibashi M, Sun Y, Griffin P, McVittie J, Pianetta P, Saraswat K, Nishi Y. Radical oxidation of germanium for interface gate dielectric GeO 2 formation in metal-insulator-semiconductor gate stack Journal of Applied Physics. 106. DOI: 10.1063/1.3259407 |
0.542 |
|
| 2009 |
Sun Y, Kirby RE, Maruyama T, Mulhollan GA, Bierman JC, Pianetta P. The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3 Applied Physics Letters. 95. DOI: 10.1063/1.3257730 |
0.528 |
|
| 2009 |
Toyoda S, Takahashi H, Kumigashira H, Oshima M, Lee DI, Sun S, Liu Z, Sun Y, Pianetta PA, Oshiyama I, Tai K, Fukuda S. Study on mechanism of crystallization in HfO2 films on Si substrates by in-depth profile analysis using photoemission spectroscopy Journal of Applied Physics. 106. DOI: 10.1063/1.3212979 |
0.684 |
|
| 2009 |
Oshima Y, Shandalov M, Sun Y, Pianetta P, McIntyre PC. Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density Applied Physics Letters. 94. DOI: 10.1063/1.3116624 |
0.539 |
|
| 2009 |
Maldonado JR, Liu Z, Dowell DH, Kirby RE, Sun Y, Pianetta P, Pease F. Electron sources utilizing thin CsBr coatings Microelectronic Engineering. 86: 529-531. DOI: 10.1016/J.Mee.2008.11.063 |
0.546 |
|
| 2008 |
Oshima Y, Sun Y, Kuzum D, Sugawara T, Saraswat KC, Pianetta P, McIntyre PC. Chemical bonding, interfaces, and defects in hafnium oxidegermanium oxynitride gate stacks on Ge(100) Journal of the Electrochemical Society. 155: G304-G309. DOI: 10.1149/1.2995832 |
0.507 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe A, Oshima Y, Sun Y, McVittie J, Pianetta PA, McIntyre PC, Saraswat KC. Ge interface passivation techniques and their thermal stability Ecs Transactions. 16: 1025-1029. DOI: 10.1149/1.2986865 |
0.393 |
|
| 2008 |
Maldonado JR, Sun Y, Liu Z, Liu X, Tanimoto S, Pianetta P, Pease F. Evaluation of electron energy spread in CsBr based photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 2085-2090. DOI: 10.1116/1.2976572 |
0.556 |
|
| 2008 |
Sun Y, Liu Z, Sun S, Pianetta P. The effectiveness of HCl and HF cleaning of Si0.85Ge 0.15 surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1248-1250. DOI: 10.1116/1.2966428 |
0.664 |
|
| 2008 |
Kuzum D, Krishnamohan T, Pethe AJ, Okyay AK, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Ge-interface engineering with ozone oxidation for low interface-state density Ieee Electron Device Letters. 29: 328-330. DOI: 10.1109/Led.2008.918272 |
0.529 |
|
| 2008 |
Maldonado JR, Liu Z, Dowell DH, Kirby RE, Sun Y, Pianetta P, Pease F. Robust CsBr/Cu photocathodes for the linac coherent light source Physical Review Special Topics - Accelerators and Beams. 11. DOI: 10.1103/Physrevstab.11.060702 |
0.532 |
|
| 2008 |
Sun Y, Pianetta P, Chen PT, Kobayashi M, Nishi Y, Goel N, Garner M, Tsai W. Arsenic-dominated chemistry in the acid cleaning of InGaAs and InAlAs surfaces Applied Physics Letters. 93. DOI: 10.1063/1.3025852 |
0.552 |
|
| 2008 |
Kobayashi M, Chen PT, Sun Y, Goel N, Majhi P, Garner M, Tsai W, Pianetta P, Nishi Y. Synchrotron radiation photoemission spectroscopic study of band offsets and interface self-cleaning by atomic layer deposited HfO2 on In 0.53Ga0.47 As and In0.52Al0.48 As Applied Physics Letters. 93. DOI: 10.1063/1.3020298 |
0.517 |
|
| 2008 |
Liu Z, Sun Y, Peterson S, Pianetta P. Photoemission study of Cs-NF3 activated GaAs(100) negative electron affinity photocathodes Applied Physics Letters. 92. DOI: 10.1063/1.2945276 |
0.587 |
|
| 2008 |
Chen PT, Sun Y, Kim E, McIntyre PC, Tsai W, Garner M, Pianetta P, Nishi Y, Chui CO. HfO2 gate dielectric on (NH4)2S passivated (100) GaAs grown by atomic layer deposition Journal of Applied Physics. 103. DOI: 10.1063/1.2838471 |
0.574 |
|
| 2007 |
Ha JH, Alshareef H, Chambers J, Sun Y, Pianetta P, McIntyre PC, Colombo L. Oxygen transfer from metal gate to high-k gate dielectric stack: Interface structure & property changes Ecs Transactions. 11: 213-218. DOI: 10.1149/1.2779562 |
0.415 |
|
| 2007 |
Maldonado JR, Liu Z, Sun Y, Schuetter S, Pianetta P, Pease RFW. CsBrGaN heterojunction photoelectron source Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 2266-2270. DOI: 10.1116/1.2779042 |
0.56 |
|
| 2007 |
Sun Y, Liu Z, Pianetta P. Surface dipole formation and lowering of the work function by Cs adsorption on InP(100) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 1351-1356. DOI: 10.1116/1.2753845 |
0.577 |
|
| 2007 |
Kuzum D, Pethe AJ, Krishnamohan T, Oshima Y, Sun Y, McVittie JP, Pianetta PA, McIntyre PC, Saraswat KC. Interface-engineered Ge (100) and (111), N- and P-FETs with high mobility Technical Digest - International Electron Devices Meeting, Iedm. 723-726. DOI: 10.1109/IEDM.2007.4419048 |
0.389 |
|
| 2007 |
Lee DI, Sun Y, Liu Z, Sun S, Pianetta P. Angular dependence of the photoelectron energy distribution of InP(100) and GaAs(100) negative electron affinity photocathodes Applied Physics Letters. 91. DOI: 10.1063/1.2805775 |
0.676 |
|
| 2007 |
Lee DI, Sun Y, Liu Z, Sun S, Peterson S, Pianetta P. The distribution of oxide species in the CsO activation layer on InP(100) negative electron affinity photocathodes Journal of Applied Physics. 102. DOI: 10.1063/1.2786885 |
0.707 |
|
| 2007 |
Sun Y, Liu Z, Pianetta P, Lee DI. Formation of cesium peroxide and cesium superoxide on InP photocathode activated by cesium and oxygen Journal of Applied Physics. 102. DOI: 10.1063/1.2786882 |
0.673 |
|
| 2007 |
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M, Schlom DG, Wen H, Gaspe C, Keay JC, Santos MB, Goncharova LV, Garfunkel E, Gustafsson T. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As Applied Physics Letters. 91. DOI: 10.1063/1.2783264 |
0.531 |
|
| 2007 |
Liu Z, Sun Y, Pianetta P, Maldonado JR, Pease RFW, Schuetter S. High current density GaN/CsBr heterojunction photocathode with improved photoyield Applied Physics Letters. 90. DOI: 10.1063/1.2746959 |
0.55 |
|
| 2006 |
Maldonado JR, Liu Z, Sun Y, Pianetta PA, Pease FW. Photoelectron emission studies in CsBr at 257 nm Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2886-2891. DOI: 10.1116/1.2363410 |
0.572 |
|
| 2006 |
Sun S, Sun Y, Liu Z, Lee DI, Pianetta P. Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces Applied Physics Letters. 89. DOI: 10.1063/1.2403908 |
0.702 |
|
| 2006 |
Liu Z, Maldonado J, Sun Y, Pianetta P, Pease RFW. CsBr photocathode at 257 nm: A rugged high current density electron source Applied Physics Letters. 89. DOI: 10.1063/1.2354029 |
0.571 |
|
| 2006 |
Sun S, Sun Y, Liu Z, Lee DI, Peterson S, Pianetta P. Surface termination and roughness of Ge(100) cleaned by HF and HCl solutions Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2162699 |
0.708 |
|
| 2005 |
Liu Z, Sun Y, Pianetta P, Pease RFW. Narrow cone emission from negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 2758-2762. DOI: 10.1116/1.2101726 |
0.547 |
|
| 2005 |
Sun Y, Liu Z, MacHuca F, Pianetta P, Spicer WE. Optimized cleaning method for producing device quality InP(100) surfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1935745 |
0.605 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Optimization and characterization of III-V surface cleaning Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1953-1958. DOI: 10.1116/1.1593644 |
0.618 |
|
| 2003 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1863-1869. DOI: 10.1116/1.1589512 |
0.6 |
|
| 2003 |
Sun Y, Liu Z, Machuca F, Pianetta P, Spicer WE. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 219-225. DOI: 10.1116/1.1532738 |
0.62 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Preparation of clean GaAs(100) studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 212-218. DOI: 10.1116/1.1532737 |
0.615 |
|
| 2003 |
Sikes HD, Sun Y, Dudek SP, Chidsey CED, Pianetta P. Photoelectron spectroscopy to probe the mechanism of electron transfer through oligo(phenylene vinylene) bridges Journal of Physical Chemistry B. 107: 1170-1173. DOI: 10.1021/Jp026734A |
0.51 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Role of oxygen in semiconductor negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2721-2725. DOI: 10.1116/1.1521742 |
0.599 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Simple method for cleaning gallium nitride (0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1784-1786. DOI: 10.1116/1.1503782 |
0.603 |
|
| 2002 |
Niederhauser TL, Lua YY, Sun Y, Jiang G, Strossman GS, Pianetta P, Linford MR. Formation of (functionalized) monolayers and simultaneous surface patterning by scribing silicon in the presence of alkyl halides Chemistry of Materials. 14: 27-29. DOI: 10.1021/Cm0108536 |
0.52 |
|
| 2001 |
Kasnavi R, Sun Y, Mount G, Pianetta P, Griffin PB, Plummer JD. Characterization of profiling techniques for ultralow energy arsenic implants Electrochemical and Solid-State Letters. 4: G1-G3. DOI: 10.1149/1.1344284 |
0.437 |
|
| 2000 |
Machuca F, Sun Y, Liu Z, Ioakeimidi K, Pianetta P, Pease RFW. Prospect for high brightness III-nitride electron emitter Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3042-3046. DOI: 10.1116/1.1321270 |
0.583 |
|
| 2000 |
Kasnavi R, Sun Y, Mo R, Pianetta P, Griffin PB, Plummer JD. Characterization of arsenic dose loss at the Si/SiO2 interface Journal of Applied Physics. 87: 2255-2260. DOI: 10.1063/1.372169 |
0.51 |
|
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