Claudine M. Chen, Ph.D. - Publications
Affiliations: | 2001 | California Institute of Technology, Pasadena, CA |
Area:
photovoltaicsYear | Citation | Score | |||
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2000 | Tanabe H, Chen CM, Atwater HA. Grain boundary filtration by selective nucleation and solid phase epitaxy of Ge through planar constrictions Applied Physics Letters. 77: 4325-4327. DOI: 10.1063/1.1333682 | 0.465 | |||
2000 | Petkov MP, Chen CM, Atwater HA, Rassiga S, Lynn KG. A relation between surface oxide and oxygen-defect complexes in solid-phase epitaxial Si regrown from ion-beam-amorphized Si layers Applied Physics Letters. 76: 1410-1412. DOI: 10.1063/1.126047 | 0.42 | |||
2000 | Puglisi R, Tanabe H, Chen C, Atwater HA. Large-grained polycrystalline Si films obtained by selective nucleation and solid phase epitaxy Materials Science and Engineering: B. 73: 212-217. DOI: 10.1016/S0921-5107(99)00466-3 | 0.503 | |||
1999 | Puglisi RA, Tanabe H, Chen CM, Atwater HA, Rimini E. Ni-Induced Selective Nucleation and Solid Phase Epitaxy of Large-Grained Poly-Si on Glass Mrs Proceedings. 587. DOI: 10.1557/Proc-587-O8.1 | 0.505 | |||
1999 | Chen CM, Rassiga S, Gessmann T, Petkov MP, Weber MH, Lynn KG, Atwater HA. The Role of Vacancies and Dopants in Si Solid-Phase Epitaxial Crystallization Mrs Proceedings. 557. DOI: 10.1557/Proc-557-183 | 0.466 | |||
1997 | Chen CM, Atwater HA. Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process Mrs Proceedings. 485. DOI: 10.1557/Proc-485-67 | 0.491 | |||
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