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Junxia Shi, Ph.D. - Publications

Affiliations: 
2010 Cornell University, Ithaca, NY, United States 
Area:
Compound semiconductor materials and high frequency high speed devices; molecular beam epitaxy; microwave and millimeter wave transistors and integrated circuits; semiconductor lasers and photodetectors and their integration with transistors
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Jiang T, Zhang YD, Chen Q, Gao Q, Zhu XC, Zhou JS, Shi JQ, Lu H, Tan L, Yu JT. TREM2 modifies microglial phenotype and provides neuroprotection in P301S tau transgenic mice. Neuropharmacology. PMID 26802771 DOI: 10.1016/j.neuropharm.2016.01.028  0.307
2016 Wen W, Kato N, Hwang JY, Guo X, Tabara Y, Li H, Dorajoo R, Yang X, Tsai FJ, Li S, Wu Y, Wu T, Kim S, Guo X, Liang J, ... Shi J, et al. Genome-wide association studies in East Asians identify new loci for waist-hip ratio and waist circumference. Scientific Reports. 6: 17958. PMID 26785701 DOI: 10.1038/Srep17958  0.377
2009 Shi J, Pophristic M, Eastman LF. High current density/high voltage AlGaN/GaN HFETs on sapphire International Journal of High Speed Electronics and Systems. 19: 129-135. DOI: 10.1142/S0129156409006175  0.453
2009 Shi J, Eastman LF, Xin X, Pophristic M. High performance AlGaN/GaN power switch with HfO2 insulation Applied Physics Letters. 95. DOI: 10.1063/1.3190506  0.453
2007 Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF. C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1836-1841. DOI: 10.1116/1.2794058  0.519
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