Year |
Citation |
Score |
2020 |
Xu C, Kolluri SK, Endo K, Banerjee K. Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability” Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 39: 277-277. DOI: 10.1109/Tcad.2019.2944583 |
0.519 |
|
2013 |
Xu C, Banerjee K. Physical modeling of the capacitance and capacitive coupling noise of through-oxide vias in FDSOI-based ultra-high density 3-D ICs Ieee Transactions On Electron Devices. 60: 123-131. DOI: 10.1109/Ted.2012.2227966 |
0.575 |
|
2013 |
Xu C, Kolluri SK, Endo K, Banerjee K. Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 32: 1045-1058. DOI: 10.1109/Tcad.2013.2248194 |
0.57 |
|
2012 |
Xu C, Suaya R, Banerjee K. Some clarifications on "compact modeling and analysis of through-si-via induced electrical noise coupling in three-dimensional ICs" Ieee Transactions On Electron Devices. 59: 2861-2862. DOI: 10.1109/Ted.2012.2209431 |
0.523 |
|
2012 |
Khatami Y, Li H, Xu C, Banerjee K. Metal-to-multilayer-graphene contact part II: Analysis of contact resistance Ieee Transactions On Electron Devices. 59: 2453-2460. DOI: 10.1109/Ted.2012.2205257 |
0.731 |
|
2012 |
Khatami Y, Li H, Xu C, Banerjee K. Metal-to-multilayer-graphene contact part I: Contact resistance modeling Ieee Transactions On Electron Devices. 59: 2444-2452. DOI: 10.1109/Ted.2012.2205256 |
0.747 |
|
2012 |
Xu C, Srivastava N, Suaya R, Banerjee K. Fast high-frequency impedance extraction of horizontal interconnects and inductors in 3-D ICs with multiple substrates Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 31: 1698-1710. DOI: 10.1109/Tcad.2012.2203598 |
0.669 |
|
2011 |
Xu C, Suaya R, Banerjee K. Compact modeling and analysis of through-Si-Via-induced electrical noise coupling in three-dimensional ICs Ieee Transactions On Electron Devices. 58: 4024-4034. DOI: 10.1109/Ted.2011.2166156 |
0.551 |
|
2011 |
Xu C, Kourkoulos V, Suaya R, Banerjee K. A fully analytical model for the series impedance of through-silicon vias with consideration of substrate effects and coupling with horizontal interconnects Ieee Transactions On Electron Devices. 58: 3529-3540. DOI: 10.1109/Ted.2011.2162846 |
0.584 |
|
2011 |
Sarkar D, Xu C, Li H, Banerjee K. High-frequency behavior of graphene-based interconnect-sPart II: Impedance analysis and implications for inductor design Ieee Transactions On Electron Devices. 58: 853-859. DOI: 10.1109/Ted.2010.2102035 |
0.586 |
|
2011 |
Sarkar D, Xu C, Li H, Banerjee K. High-frequency behavior of graphene-based interconnects-Part I: Impedance modeling Ieee Transactions On Electron Devices. 58: 843-852. DOI: 10.1109/Ted.2010.2102031 |
0.588 |
|
2011 |
Rasouli SH, Xu C, Singh N, Banerjee K. A physical model for work-function variation in ultra-short channel metal-gate mosfets Ieee Electron Device Letters. 32: 1507-1509. DOI: 10.1109/Led.2011.2166531 |
0.712 |
|
2011 |
Liu W, Li H, Xu C, Khatami Y, Banerjee K. Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition Carbon. 49: 4122-4130. DOI: 10.1016/J.Carbon.2011.05.047 |
0.714 |
|
2010 |
Xu C, Li H, Suaya R, Banerjee K. Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs Ieee Transactions On Electron Devices. 57: 3405-3417. DOI: 10.1109/Ted.2010.2076382 |
0.606 |
|
2010 |
Srivastava N, Xu C, Suaya R, Banerjee K. Corrections to “Analytical Expressions for High-Frequency VLSI Interconnect Impedance Extraction in the Presence of a Multilayer Conductive Substrate” [Jul 09 1047-1060 Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 29: 849-849. DOI: 10.1109/Tcad.2010.2047753 |
0.63 |
|
2010 |
Jiang L, Xu C, Rubin BJ, Weger AJ, Deutsch A, Smith H, Caron A, Banerjee K. A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures Ieee Transactions On Advanced Packaging. 33: 777-786. DOI: 10.1109/Tadvp.2010.2090348 |
0.558 |
|
2010 |
Li H, Xu C, Banerjee K. Carbon nanomaterials: The ideal interconnect technology for next-generation ICs Ieee Design and Test of Computers. 27: 20-31. DOI: 10.1109/Mdt.2010.55 |
0.556 |
|
2009 |
Li H, Xu C, Srivastava N, Banerjee K. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects Ieee Transactions On Electron Devices. 56: 1799-1821. DOI: 10.7567/Ssdm.2009.D-8-1 |
0.693 |
|
2009 |
Xu C, Li H, Banerjee K. Modeling, analysis, and design of graphene nano-ribbon interconnects Ieee Transactions On Electron Devices. 56: 1567-1578. DOI: 10.1109/Ted.2009.2024254 |
0.602 |
|
2009 |
Xu C, Jiang L, Kolluri SK, Rubin BJ, Deutsch A, Smith H, Banerjee K. Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 658-665. |
0.517 |
|
2007 |
Xu C, Wang J, Chen H, Xu F, Dong Z, Hao Y, Wen PC. The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure Ieee Electron Device Letters. 28: 942-944. DOI: 10.1109/Led.2007.906932 |
0.304 |
|
2006 |
Xu C, Wang J, Wang M, Jin H, Hao Y, Wen CP. Reeves's circular transmission line model and its scope of application to extract specific contact resistance Solid-State Electronics. 50: 843-847. DOI: 10.1016/J.Sse.2006.03.007 |
0.338 |
|
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