Year |
Citation |
Score |
2021 |
Liu M, Du W, Su H, Liu B, Meng H, Tang XL. A voltage-pulse-modulated giant magnetoresistance switch with four flexible sensing ranges. Nanotechnology. PMID 34479216 DOI: 10.1088/1361-6528/ac2392 |
0.302 |
|
2016 |
Meng H, Wu J, Wu X, Ren M, Ren Y. Long-range superharmonic Josephson current and spin-triplet pairing correlations in a junction with ferromagnetic bilayers. Scientific Reports. 6: 21308. PMID 26892755 DOI: 10.1038/srep21308 |
0.386 |
|
2015 |
Han G, Meng H, Huang J, Naik VB, Sim CH, Tran M, Lim ST. Perspectives of electric field controlled switching in perpendicular magnetic random access Ieee Transactions On Magnetics. 51. DOI: 10.1109/Tmag.2014.2354452 |
0.486 |
|
2014 |
Meng H, Naik VB, Liu R, Han G. Erratum: “Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence” [Appl. Phys. Lett. 105, 042410 (2014)] Applied Physics Letters. 105: 189901. DOI: 10.1063/1.4901086 |
0.419 |
|
2014 |
Naik VB, Meng H, Xiao JX, Liu RS, Kumar A, Zeng KY, Luo P, Yap S. Effect of electric-field on the perpendicular magnetic anisotropy and strain properties in CoFeB/MgO magnetic tunnel junctions Applied Physics Letters. 105. DOI: 10.1063/1.4892410 |
0.353 |
|
2014 |
Meng H, Naik VB, Liu R, Han G. Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions - CoFeB and MgO thickness dependence Applied Physics Letters. 105. DOI: 10.1063/1.4891843 |
0.464 |
|
2014 |
Naik VB, Meng H, Liu RS, Luo P, Yap S, Han GC. Electric-field tunable magnetic-field-sensor based on CoFeB/MgO magnetic tunnel junction Applied Physics Letters. 104. DOI: 10.1063/1.4882178 |
0.385 |
|
2013 |
Meng H, Naik VB, Sbiaa R. Tuning of perpendicular exchange bias for magnetic memory applications Physica Status Solidi (a). 210: 391-394. DOI: 10.1002/Pssa.201228487 |
0.411 |
|
2012 |
Wu G, Khoo KH, Jhon MH, Meng H, Lua SYH, Sbiaa R, Gan CK. First-principles calculations of the magnetic anisotropic constants of Co-Pd multilayers: Effect of stacking faults Epl. 99. DOI: 10.1209/0295-5075/99/17001 |
0.382 |
|
2012 |
Naik VB, Meng H, Sbiaa R. Thick CoFeB with perpendicular magnetic anisotropy in CoFeB-MgO based magnetic tunnel junction Aip Advances. 2: 42182. DOI: 10.1063/1.4771996 |
0.452 |
|
2012 |
Meng H, Sbiaa R, Akhtar MAK, Liu RS, Naik VB, Wang CC. Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Applied Physics Letters. 100: 122405. DOI: 10.1063/1.3695168 |
0.44 |
|
2011 |
Guo J, Tan SG, Jalil MBA, Eason K, Lua SYH, Rachid S, Meng H. MRAM device incorporating single-layer switching via rashba-induced spin torque Ieee Transactions On Magnetics. 47: 3868-3871. DOI: 10.1109/Tmag.2011.2158634 |
0.496 |
|
2011 |
Meng H, Sbiaa R, Lua SYH, Wang CC, Akhtar MAK, Wong SK, Luo P, Carlberg CJP, Ang KSA. Low current density induced spin-transfer torque switching in CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Journal of Physics D: Applied Physics. 44. DOI: 10.1088/0022-3727/44/40/405001 |
0.462 |
|
2011 |
Meng H, Sbiaa R, Wang CC, Lua SYH, Akhtar MAK. Annealing temperature window for tunneling magnetoresistance and spin torque switching in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions Journal of Applied Physics. 110: 103915. DOI: 10.1063/1.3662893 |
0.502 |
|
2011 |
Meng H, Lum WH, Sbiaa R, Lua SYH, Tan HK. Annealing effects on CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Journal of Applied Physics. 110: 33904. DOI: 10.1063/1.3611426 |
0.379 |
|
2011 |
Sbiaa R, Lua SYH, Law R, Meng H, Lye R, Tan HK. Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices (invited) Journal of Applied Physics. 109. DOI: 10.1063/1.3540361 |
0.463 |
|
2008 |
Yao X, Meng H, Zhang Y, Wang J. Improved current switching symmetry of magnetic tunneling junction and giant magnetoresistance devices with nano-current-channel structure Journal of Applied Physics. 103. DOI: 10.1063/1.2837485 |
0.66 |
|
2007 |
Meng H, Wang J. Asymmetric Spin Torque Transfer in Nano GMR Device With Perpendicular Anisotropy Ieee Transactions On Magnetics. 43: 2833-2835. DOI: 10.1109/Tmag.2007.893528 |
0.567 |
|
2006 |
Meng H, Wang JP. Composite free layer for high density magnetic random access memory with lower spin transfer current Applied Physics Letters. 89: 152509. DOI: 10.1063/1.2361280 |
0.433 |
|
2006 |
Meng H, Wang JP. Spin transfer in nanomagnetic devices with perpendicular anisotropy Applied Physics Letters. 88: 172506-172508. DOI: 10.1063/1.2198797 |
0.535 |
|
2006 |
Meng H, Wang J, Wang J. Low critical current for spin transfer in magnetic tunnel junctions Applied Physics Letters. 88: 082504. DOI: 10.1063/1.2179124 |
0.579 |
|
2005 |
Meng H, Wang J. Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer Ieee Transactions On Magnetics. 41: 2612-2614. DOI: 10.1109/Tmag.2005.855348 |
0.573 |
|
2005 |
Meng H, Wang J, Wang J. A spintronics full adder for magnetic CPU Ieee Electron Device Letters. 26: 360-362. DOI: 10.1109/Led.2005.848129 |
0.516 |
|
2005 |
Wang J, Meng H, Wang J. Programmable spintronics logic device based on a magnetic tunnel junction element Journal of Applied Physics. 97. DOI: 10.1063/1.1857655 |
0.511 |
|
2005 |
Meng H, Wang J, Diao Z, Wang JP. Low resistance spin-dependent magnetic tunnel junction with high breakdown voltage for current-induced-magnetization-switching devices Journal of Applied Physics. 97. DOI: 10.1063/1.1857651 |
0.555 |
|
2005 |
Ding Y, Pakala M, Nguyen P, Meng H, Huai Y, Wang JP. Fabrication of current-induced magnetization switching devices using etch-back planarization process Journal of Applied Physics. 97. DOI: 10.1063/1.1847971 |
0.467 |
|
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