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Mingmei Wang, Ph.D. - Publications

Affiliations: 
2011 Chemical and Biological Engineering Iowa State University, Ames, IA, United States 
Area:
Chemical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Wang M, Ventzek PLG, Ranjan A. Quasiatomic layer etching of silicon oxide selective to silicon nitride in topographic structures using fluorocarbon plasmas Journal of Vacuum Science and Technology. 35: 31301. DOI: 10.1116/1.4978224  0.306
2016 Ranjan A, Wang M, Sherpa SD, Rastogi V, Koshiishi A, Ventzek PLG. Implementation of atomic layer etching of silicon: Scaling parameters, feasibility, and profile control Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4944850  0.32
2015 Ranjan A, Wang M, Sherpa S, Ventzek P. Electron energy distribution control by fiat: Breaking from the conventional flux ratio scaling rules in etch Proceedings of Spie - the International Society For Optical Engineering. 9428. DOI: 10.1117/12.2086604  0.346
2011 Wang M, Kushner MJ. Modeling of implantation and mixing damage during etching of SiO2 over Si in fluorocarbon plasmas Journal of Vacuum Science and Technology. 29: 51306. DOI: 10.1116/1.3626533  0.45
2011 Wang M, Foster JE, Kushner MJ. Plasma propagation through porous dielectric sheets Ieee Transactions On Plasma Science. 39: 2244-2245. DOI: 10.1109/Tps.2011.2126605  0.452
2010 Wang M, Kushner MJ. High energy electron fluxes in dc-augmented capacitively coupled plasmas. II. Effects on twisting in high aspect ratio etching of dielectrics Journal of Applied Physics. 107: 23309. DOI: 10.1063/1.3290873  0.486
2010 Wang M, Kushner MJ. High energy electron fluxes in dc-augmented capacitively coupled plasmas I. Fundamental characteristics Journal of Applied Physics. 107: 23308. DOI: 10.1063/1.3290870  0.455
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