Year |
Citation |
Score |
2008 |
Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] Journal of Applied Physics. 103: 89901. DOI: 10.1063/1.2903974 |
0.743 |
|
2008 |
Hoshi T, Koyama T, Sugawara M, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Correlation between the violet luminescence intensity and defect density in AlN epilayers grown by ammonia-source molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2129-2132. DOI: 10.1002/Pssc.200778473 |
0.775 |
|
2007 |
Ikeda H, Okamura T, Matsukawa K, Sota T, Sugawara M, Hoshi T, Cantu P, Sharma R, Kaeding JF, Keller S, Mishra UK, Kosaka K, Asai K, Sumiya S, Shibata T, et al. Impact of strain on free-exciton resonance energies in wurtzite AlN Journal of Applied Physics. 102. DOI: 10.1063/1.2825577 |
0.762 |
|
2007 |
Sharma R, Choi YS, Wang CF, David A, Weisbuch C, Nakamura S, Hu EL. Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors Applied Physics Letters. 91. DOI: 10.1063/1.2805028 |
0.472 |
|
2007 |
Koyama T, Sugawara M, Hoshi T, Uedono A, Kaeding JF, Sharma R, Nakamura S, Chichibu SF. Relation between Al vacancies and deep emission bands in AlN epitaxial films grown by N H3 -source molecular beam epitaxy Applied Physics Letters. 90. DOI: 10.1063/1.2748315 |
0.776 |
|
2007 |
Pattison PM, David A, Sharma R, Weisbuch C, DenBaars S, Nakamura S. Gallium nitride based microcavity light emitting diodes with 2λ effective cavity thickness Applied Physics Letters. 90. DOI: 10.1063/1.2430913 |
0.81 |
|
2007 |
Tamboli AC, Haberer ED, Sharma R, Lee KH, Nakamura S, Hu EL. Room-temperature continuous-wave lasing in GaNInGaN microdisks Nature Photonics. 1: 61-64. DOI: 10.1038/Nphoton.2006.52 |
0.449 |
|
2006 |
Diana FS, David A, Meinel I, Sharma R, Weisbuch C, Nakamura S, Petroff PM. Photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure. Nano Letters. 6: 1116-20. PMID 16771564 DOI: 10.1021/Nl060535B |
0.41 |
|
2006 |
Choi YS, Meier C, Sharma R, Hennessy K, Haberer ED, Nakamura S, Hu EL. Optical properties of GaN photonic crystal membrane nanocavities at blue wavelengths Materials Research Society Symposium Proceedings. 892: 491-496. DOI: 10.1557/Proc-0892-Ff20-06 |
0.491 |
|
2006 |
Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02 |
0.803 |
|
2006 |
Masui H, Baker TJ, Sharma R, Pattison PM, Iza M, Zhong H, Nakamura S, DenBaars SP. First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L904 |
0.773 |
|
2006 |
David A, Fujii T, Sharma R, McGroddy K, Nakamura S, Denbaars SP, Hu EL, Weisbuch C, Benisty H. Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution Applied Physics Letters. 88. DOI: 10.1063/1.2171475 |
0.418 |
|
2006 |
David A, Fujii T, Matioli E, Sharma R, Nakamura S, DenBaars SP, Weisbuch C, Benisty H. GaN light-emitting diodes with Archimedean lattice photonic crystals Applied Physics Letters. 88: 73510. DOI: 10.1063/1.2168673 |
0.369 |
|
2006 |
Meier C, Hennessy K, Haberer ED, Sharma R, Choi YS, McGroddy K, Keller S, DenBaars SP, Nakamura S, Hu EL. Visible resonant modes in GaN-based photonic crystal membrane cavities Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2166680 |
0.411 |
|
2006 |
Hashimoto T, Fujito K, Sharma R, Letts ER, Fini PT, Speck JS, Nakamura S. Phase selection of microcrystalline GaN synthesized in supercritical ammonia Journal of Crystal Growth. 291: 100-106. DOI: 10.1016/J.Jcrysgro.2006.02.031 |
0.742 |
|
2006 |
Pattison PM, Sharma R, David A, Waki I, Weisbuch C, Nakamura S. Gallium nitride based micro-cavity light emitting diodes emitting at 498 nm Physica Status Solidi (a) Applications and Materials Science. 203: 1783-1786. DOI: 10.1002/Pssa.200565408 |
0.799 |
|
2006 |
Koyama T, Sugawara M, Uchinuma Y, Kaeding JF, Sharma R, Onuma T, Nakamura S, Chichibu SF. Strain-relaxation in NH 3-source molecular beam epitaxy of AlN epilayers on GaN epitaxial templates Physica Status Solidi (a) Applications and Materials Science. 203: 1603-1606. DOI: 10.1002/Pssa.200565289 |
0.783 |
|
2005 |
Choi YS, Hennessy K, Sharma R, Haberer E, Gao Y, Denbaars SP, Nakamura S, Hu EL, Meier C. GaN blue photonic crystal membrane nanocavities Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2147713 |
0.373 |
|
2005 |
Sharma R, Pattison PM, Masui H, Farrell RM, Baker TJ, Haskell BA, Wu F, Denbaars SP, Speck JS, Nakamura S. Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139841 |
0.793 |
|
2005 |
David A, Meier C, Sharma R, Diana FS, Denbaars SP, Hu E, Nakamura S, Weisbuch C, Benisty H. Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction Applied Physics Letters. 87. DOI: 10.1063/1.2039987 |
0.43 |
|
2005 |
Haberer ED, Meier C, Sharma R, Stonas AR, DenBaars SP, Nakamura S, Hu EL. Observation of high Q resonant modes in optically pumped GaN/InGaN microdisks fabricated using photoelectrochemical etching Physica Status Solidi C: Conferences. 2: 2845-2848. DOI: 10.1002/Pssc.200461505 |
0.468 |
|
2004 |
Gao Y, Fujii T, Sharma R, Fujito K, Denbaars SP, Nakamura S, Hu EL. Roughening Hexagonal Surface Morphology on Laser Lift-Off (LLO) N-Face GaN with Simple Photo-Enhanced Chemical Wet Etching Japanese Journal of Applied Physics. 43: 637. DOI: 10.1143/Jjap.43.L637 |
0.472 |
|
2004 |
Fujii T, David A, Schwach C, Pattison PM, Sharma R, Fujito K, Margalith T, Denbaars SP, Weisbuch C, Nakamura S. Micro cavity effect in GaN-based light-emitting diodes formed by laser lift-off and etch-back technique Japanese Journal of Applied Physics, Part 2: Letters. 43: L411-L413. DOI: 10.1143/Jjap.43.L411 |
0.785 |
|
2004 |
Koida T, Uchinuma Y, Kikuchi J, Wang KR, Terazaki M, Onuma T, Keading JF, Sharma R, Nakamura S, Chichibu SF. Improved surface morphology in GaN homoepitaxy by NH3-source molecular-beam epitaxy Journal of Vacuum Science & Technology B. 22: 2158-2164. DOI: 10.1116/1.1775202 |
0.448 |
|
2004 |
Wu Y, Hanlon A, Kaeding JF, Sharma R, Fini PT, Nakamura S, Speck JS. Effect of nitridation on polarity, microstructure, and morphology of AlN films Applied Physics Letters. 84: 912-914. DOI: 10.1063/1.1646222 |
0.747 |
|
2004 |
Fujii T, Gao Y, Sharma R, Hu EL, DenBaars SP, Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening Applied Physics Letters. 84: 855-857. DOI: 10.1063/1.1645992 |
0.402 |
|
2004 |
Kaeding JF, Wu Y, Fujii T, Sharma R, Fini PT, Speck JS, Nakamura S. Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes Journal of Crystal Growth. 272: 257-263. DOI: 10.1016/J.Jcrysgro.2004.08.132 |
0.778 |
|
2003 |
Hanlon A, Pattison PM, Kaeding JF, Sharma R, Fini P, Nakamura S. 292 nm AlGaN single-quantum well light emitting diodes grown on transparent AlN base Japanese Journal of Applied Physics, Part 2: Letters. 42: L628-L630. DOI: 10.1143/Jjap.42.L628 |
0.765 |
|
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