| Year |
Citation |
Score |
| 2020 |
Deligiannakis V, Ranepura G, Kuskovsky IL, Tamargo MC. Erratum: “Advanced material system for the design of an intermediate band solar cell: Type-II CdTe quantum dots in a ZnCdSe matrix” [J. Appl. Phys. 126, 235302 (2019)] Journal of Applied Physics. 127: 149901. DOI: 10.1063/1.5144242 |
0.482 |
|
| 2019 |
Deligiannakis V, Ranepura G, Kuskovsky IL, Tamargo MC. Advanced material system for the design of an intermediate band solar cell: Type-II CdTe quantum dots in a ZnCdSe matrix Journal of Applied Physics. 126: 235302. DOI: 10.1063/1.5126224 |
0.484 |
|
| 2019 |
Deligiannakis V, Dhomkar S, Claro M, Kuskovsky I, Tamargo M. Interface modification in type-II ZnCdSe/Zn(Cd)Te QDs for high efficiency intermediate band solar cells Journal of Crystal Growth. 512: 203-207. DOI: 10.1016/J.Jcrysgro.2019.02.025 |
0.48 |
|
| 2018 |
Ji H, Dhomkar S, Wu R, Ludwig J, Lu Z, Smirnov D, Tamargo MC, Bryant GW, Kuskovsky IL. Long spin-flip time and large Zeeman splitting of holes in type-II ZnTe/ZnSe submonolayer quantum dots. Journal of Applied Physics. 124. PMID 31274882 DOI: 10.1063/1.5041478 |
0.492 |
|
| 2018 |
Imperato CM, Ranepura GA, Deych LI, Kuskovsky IL. Theoretical Determination of Optimal Material Parameters for ZnCdTe/ZnCdSe Quantum Dot Intermediate Band Solar Cells Journal of Electronic Materials. 47: 4325-4331. DOI: 10.1007/S11664-018-6241-6 |
0.491 |
|
| 2017 |
Kuskovsky IL, Mourokh LG, Roy B, Ji H, Dhomkar S, Ludwig J, Smirnov D, Tamargo MC. Decoherence in semiconductor nanostructures with type-II band alignment: All-optical measurements using Aharonov-Bohm excitons Physical Review B. 95. DOI: 10.1103/Physrevb.95.165445 |
0.41 |
|
| 2017 |
Deligiannakis V, Dhomkar S, Ji H, Pagliero D, Kuskovsky IL, Meriles CA, Tamargo MC. Spin dynamics of ZnSe-ZnTe nanostructures grown by migration enhanced molecular beam epitaxy Journal of Applied Physics. 121: 115702. DOI: 10.1063/1.4978314 |
0.495 |
|
| 2016 |
Ji H, Dhomkar S, Wu R, Shuvayev V, Deligiannakis V, Tamargo MC, Ludwig J, Lu Z, Smirnov D, Wang A, Kuskovsky IL. Optical anisotropy in type-II ZnTe/ZnSe submonolayer quantum dots Journal of Applied Physics. 119. DOI: 10.1063/1.4953675 |
0.498 |
|
| 2015 |
Dhomkar S, Vaxelaire N, Ji H, Shuvayev V, Tamargo MC, Kuskovsky IL, Noyan IC. Determination of shape anisotropy in embedded low contrast submonolayer quantum dot structures Applied Physics Letters. 107. DOI: 10.1063/1.4938399 |
0.461 |
|
| 2015 |
Dhomkar S, Ji H, Roy B, Deligiannakis V, Wang A, Tamargo MC, Kuskovsky IL. Measurement and control of size and density of type-II ZnTe/ZnSe submonolayer quantum dots grown by migration enhanced epitaxy Journal of Crystal Growth. 422: 8-14. DOI: 10.1016/J.Jcrysgro.2015.04.013 |
0.53 |
|
| 2014 |
Ji H, Dhomkar S, Roy B, Shuvayev V, Deligiannakis V, Tamargo MC, Ludwig J, Smirnov D, Wang A, Kuskovsky IL. Determination of lateral size distribution of type-II ZnTe/ZnSe stacked submonolayer quantum dots via spectral analysis of optical signature of the Aharanov-Bohm excitons Journal of Applied Physics. 116. DOI: 10.1063/1.4899439 |
0.527 |
|
| 2014 |
Sellers IR, Kuskovsky IL, Govorov AO, McCombe BD. Optical Aharonov-Bohm effect in type-II quantum Dots Nanoscience and Technology. 87: 267-297. DOI: 10.1007/978-3-642-39197-2_11 |
0.428 |
|
| 2014 |
Roy B, Ji H, Dhomkar S, Tamargo MC, Kuskovsky IL. Observation of oscillations in energy of Aharonov-Bohm excitons in type-II ZnTe/ZnSe stacked submonolayer quantum dots Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 1248-1251. DOI: 10.1002/Pssc.201300601 |
0.489 |
|
| 2013 |
Roy B, Ji H, Dhomkar S, Cadieu FJ, Peng L, Moug R, Tamargo MC, Kuskovsky IL. Distinguishability of stacks in ZnTe/ZnSe quantum dots via spectral analysis of Aharonov-Bohm oscillations European Physical Journal B. 86. DOI: 10.1140/Epjb/E2012-30629-5 |
0.523 |
|
| 2013 |
Dhomkar S, Kuskovsky IL, Manna U, Noyan IC, Tamargo MC. Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4797486 |
0.488 |
|
| 2013 |
Dhomkar S, Manna U, Noyan IC, Tamargo MC, Kuskovsky IL. Vertical correlation and miniband formation in submonolayer Zn(Cd)Te/ZnCdSe type-II quantum dots for intermediate band solar cell application Applied Physics Letters. 103. DOI: 10.1063/1.4827636 |
0.534 |
|
| 2013 |
Dhomkar S, Manna U, Peng L, Moug R, Noyan IC, Tamargo MC, Kuskovsky IL. Feasibility of submonolayer ZnTe/ZnCdSe quantum dots as intermediate band solar cell material system Solar Energy Materials and Solar Cells. 117: 604-609. DOI: 10.1016/J.Solmat.2013.07.037 |
0.524 |
|
| 2013 |
Ji H, Roy B, Dhomkar S, Moug RT, Tamargo MC, Wang A, Kuskovsky IL. Tuning between quantum-dot- and quantum-well-like behaviors in type II ZnTe submonolayer quantum dots by controlling tellurium flux during mbe growth Journal of Electronic Materials. 42: 3297-3302. DOI: 10.1007/S11664-013-2729-2 |
0.544 |
|
| 2012 |
Roy B, Ji H, Dhomkar S, Cadieu FJ, Peng L, Moug R, Tamargo MC, Kim Y, Smirnov D, Kuskovsky IL. Enhancement and narrowing of the Aharonov-Bohm oscillations due to built-in electric field in stacked type-II ZnTe/ZnSe quantum dots: Spectral analysis Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.165310 |
0.316 |
|
| 2012 |
Manna U, Zhang Q, Dhomkar S, Salakhutdinov IF, Tamargo MC, Noyan IC, Neumark GF, Kuskovsky IL. Radiative transitions in stacked type-II ZnMgTe quantum dots embedded in ZnSe Journal of Applied Physics. 112. DOI: 10.1063/1.4754451 |
0.518 |
|
| 2012 |
Roy B, Ji H, Dhomkar S, Cadieu FJ, Peng L, Moug R, Tamargo MC, Kuskovsky IL. Determination of excitonic size with sub-nanometer precision via excitonic Aharonov-Bohm effect in type-II quantum dots Applied Physics Letters. 100. DOI: 10.1063/1.4721489 |
0.507 |
|
| 2012 |
Manna U, Noyan IC, Zhang Q, Salakhutdinov IF, Dunn KA, Novak SW, Moug R, Tamargo MC, Neumark GF, Kuskovsky IL. Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures Journal of Applied Physics. 111. DOI: 10.1063/1.3681812 |
0.483 |
|
| 2011 |
Whiteside VR, Sellers IR, Eginligil M, Oszwaldowski R, Petrou A, Zutic I, Chou WC, Kuskovsky IL, Petukhov AG, Govorov AO, McCombe BD. Robust coherent magneto-optical properties of columnar type-II quantum dots in ZnTe/ZnSe and ZnMnTe/ZnSe systems Aip Conference Proceedings. 1399: 483-484. DOI: 10.1063/1.3666464 |
0.344 |
|
| 2011 |
Zhang Q, Shen A, Kuskovsky IL, Tamargo MC. Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe Journal of Applied Physics. 110: 034302. DOI: 10.1063/1.3611418 |
0.559 |
|
| 2011 |
Roy B, Shen A, Tamargo MC, Kuskovsky IL. Effects of varying MBE growth conditions on layered Zn-Se-Te structures Journal of Electronic Materials. 40: 1775-1780. DOI: 10.1007/S11664-011-1690-1 |
0.495 |
|
| 2010 |
Kuskovsky IL, Gong Y, Neumark GF, Tamargo MC. Photoluminescence and magneto-optical properties of multilayered type-II ZnTe/ZnSe quantum dots Superlattices and Microstructures. 47: 87-92. DOI: 10.1016/J.Spmi.2009.07.035 |
0.535 |
|
| 2009 |
Xu F, Volkov V, Zhu Y, Bai H, Rea A, Valappil NV, Su W, Gao X, Kuskovsky IL, Matsui H. Long Electron-Hole Separation of ZnO-CdS Core-Shell Quantum Dots. The Journal of Physical Chemistry. C, Nanomaterials and Interfaces. 113: 19419-19423. PMID 30873252 DOI: 10.1021/jp903813h |
0.392 |
|
| 2009 |
Shuvayev VA, Kuskovsky IL, Deych LI, Gu Y, Gong Y, Neumark GF, Tamargo MC, Lisyansky AA. Dynamics of the radiative recombination in cylindrical nanostructures with type-II band alignment Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115307 |
0.466 |
|
| 2009 |
Xu F, Volkov V, Zhu Y, Bai H, Rea A, Valappil NV, Su W, Gao X, Kuskovsky IL, Matsui H. Long electron-hole separation of ZnO-CdS core-shell quantum dots Journal of Physical Chemistry C. 113: 19419-19423. DOI: 10.1021/Jp903813H |
0.481 |
|
| 2008 |
Sellers IR, Whiteside VR, Kuskovsky IL, Govorov AO, McCombe BD. Aharonov-Bohm excitons at elevated temperatures in type-II ZnTe/ZnSe quantum dots. Physical Review Letters. 100: 136405. PMID 18517978 DOI: 10.1103/Physrevlett.100.136405 |
0.495 |
|
| 2008 |
Cheung MCK, Sellers IR, Kuskovsky IL, Cartwright AN, McCombe BD. Ultrafast time-resolved photoluminescence of Zn-Se-Te multilayers with type-II ZnTe/ZnSe quantum dots Proceedings of Spie - the International Society For Optical Engineering. 6892. DOI: 10.1117/12.764112 |
0.475 |
|
| 2008 |
Gong Y, MacDonald W, Neumark GF, Tamargo MC, Kuskovsky IL. Optical properties and growth mechanism of multiple type-II ZnTe ZnSe quantum dots grown by migration-enhanced epitaxy Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.155314 |
0.522 |
|
| 2008 |
Cheung MCK, Cartwright AN, Sellers IR, McCombe BD, Kuskovsky IL. Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures Applied Physics Letters. 92. DOI: 10.1063/1.2835699 |
0.547 |
|
| 2008 |
Sellers IR, Whiteside VR, Kuskovsky IL, Govorov AO, McCombe BD. Modulation of the Aharonov-Bohm effect in type-II II-V ZnSe:Te quantum dots by a far-infrared laser Physica E: Low-Dimensional Systems and Nanostructures. 40: 1819-1823. DOI: 10.1016/J.Physe.2007.10.049 |
0.501 |
|
| 2008 |
Gu Y, Kuskovsky IL. Comment on "Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy". [J. Crystal Growth 301-302 (2007) 277] Journal of Crystal Growth. 310: 788. DOI: 10.1016/J.Jcrysgro.2007.11.142 |
0.465 |
|
| 2007 |
Andelman T, Gong Y, Polking M, Yin M, Kuskovsky I, Neumark G, O'Brien S. Morphological control and photoluminescence of zinc oxide nanocrystals. The Journal of Physical Chemistry. B. 109: 14314-8. PMID 16852799 DOI: 10.1021/Jp050540O |
0.365 |
|
| 2007 |
Kuskovsky IL, MacDonald W, Govorov AO, Mourokh L, Wei X, Tamargo MC, Tadic M, Peeters FM. Optical Aharonov-Bohm effect in stacked type-II quantum dots Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035342 |
0.482 |
|
| 2007 |
Gong Y, Andelman T, Neumark GF, O'Brien S, Kuskovsky IL. Origin of defect-related green emission from ZnO nanoparticles: Effect of surface modification Nanoscale Research Letters. 2: 297-302. DOI: 10.1007/S11671-007-9064-6 |
0.308 |
|
| 2007 |
Gu Y, Kuskovsky IL, Neumark GF. ZnSeTe Rediscovered: From Isoelectronic Centers to Quantum Dots Wide Bandgap Light Emitting Materials and Devices. 145-178. DOI: 10.1002/9783527617074.ch4 |
0.374 |
|
| 2006 |
Kuskovsky IL, Gu Y, Gong Y, Yan HF, Lau J, Noyan IC, Neumark GF, Maksimov O, Zhou X, Tamargo MC, Volkov V, Zhu Y, Wang L. Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.195306 |
0.38 |
|
| 2006 |
Gong Y, Yan HF, Kuskovsky IL, Gu Y, Noyan IC, Neumark GF, Tamargo MC. Structure of Zn-Se-Te system with submonolayer insertion of ZnTe grown by migration enhanced epitaxy Journal of Applied Physics. 99. DOI: 10.1063/1.2184434 |
0.393 |
|
| 2006 |
Maksimov O, Gong Y, Du H, Fisher P, Skowronski M, Kuskovsky IL, Heydemann VD. Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy Vacuum. 80: 1042-1045. DOI: 10.1016/J.Vacuum.2006.01.001 |
0.363 |
|
| 2005 |
Gu Y, Kuskovsky IL, Van Der Voort M, Neumark GF, Zhou X, Tamargo MC. Zn-Se-Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.045340 |
0.512 |
|
| 2005 |
Gu Y, Kuskovsky IL, Robinson RD, Herman IP, Neumark GF, Zhou X, Guo SP, Munoz M, Tamargo MC. A comparison between optically active CdZnSe/ZnSe and CdZnSe/ZnBeSe self-assembled quantum dots: Effect of beryllium Solid State Communications. 134: 677-681. DOI: 10.1016/J.Ssc.2005.03.014 |
0.477 |
|
| 2004 |
Yin M, Gu Y, Kuskovsky IL, Andelman T, Zhu Y, Neumark GF, O'Brien S. Zinc oxide quantum rods. Journal of the American Chemical Society. 126: 6206-7. PMID 15149198 DOI: 10.1021/Ja031696+ |
0.439 |
|
| 2004 |
Zhou X, Muñoz M, Guo S, Tamargo MC, Gu Y, Kuskovsky IL, Neumark GF. CdSe quantum dots grown on ZnSe and Zn[sub 0.97]Be[sub 0.03]Se by molecular-beam epitaxy: Optical studies Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 1518. DOI: 10.1116/1.1690780 |
0.543 |
|
| 2004 |
Gu Y, Kuskovsky IL, Yin M, O'Brien S, Neumark GF. Quantum confinement in ZnO nanorods Applied Physics Letters. 85: 3833-3835. DOI: 10.1063/1.1811797 |
0.499 |
|
| 2004 |
Bondarev VN, Kuskovsky IL, Gu Y, Pikhitsa PV, Belous VM, Neumark GF, Guo SP, Tamargo MC. Fluctuation theory of donor-acceptor pair luminescence in compensated semiconductors Physica Status Solidi (C). 1: 722-726. DOI: 10.1002/Pssc.200304243 |
0.308 |
|
| 2004 |
Kuskovsky IL, Gu Y, Neumark GF, Guo SP, Tamargo MC. Optical properties of semiconductors with the Coulomb potential fluctuation: case of co-doped ZnSe:(N,Cl) Physica Status Solidi (C). 1: 686-689. DOI: 10.1002/Pssc.200304241 |
0.426 |
|
| 2004 |
Gu Y, Kuskovsky IL, Fung J, Neumark GF, Zhou X, Guo SP, Tamargo MC. Optical investigation of CdSe/Zn(Be)Se quantum dot structures: size and Cd composition Physica Status Solidi (C). 1: 779-782. DOI: 10.1002/Pssc.200304223 |
0.519 |
|
| 2004 |
Kuskovsky IL, Gu Y, Van Der Voort M, Neumark GF, Zhou X, Muñoz M, Tamargo MC. Quantum structures in Zn-Se-Te system containing submonolayer quantities of Te Physica Status Solidi (B) Basic Research. 241: 527-530. DOI: 10.1002/Pssb.200304240 |
0.501 |
|
| 2004 |
Gu Y, Kuskovsky IL, Van Der Voort M, Neumark GF, Zhou X, Muñoz M, Tamargo MC. Time resolved photoluminescence studies of Zn-Se-Te nanostructures with sub-monolayer quantities of Te grown by molecular beam epitaxy Physica Status Solidi (B) Basic Research. 241: 515-518. DOI: 10.1002/Pssb.200304224 |
0.549 |
|
| 2004 |
Zhou X, Muñoz M, Guo S, Tamargo MC, Gu Y, Kuskovsky IL, Neumark GF. CdSe quantum dots grown on ZnSe and Zn 0.97Be 0.03Se by molecular-beam epitaxy: Optical studies Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1518-1522. |
0.437 |
|
| 2003 |
Gu Y, Kuskovsky IL, Fung J, Robinson R, Herman IP, Neumark GF, Zhou X, Guo SP, Tamargo MC. CdZnSe/Zn(Be)Se quantum dot structures: Size, chemical composition and phonons Materials Research Society Symposium - Proceedings. 799: 299-304. DOI: 10.1557/Proc-799-Z9.7 |
0.467 |
|
| 2003 |
Gong Y, Gu Y, Kuskovsky IL, Neumark GF, Li J, Lin JY, Jiang HX, Ferguson I. Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.16 |
0.351 |
|
| 2003 |
Zhou X, Gu Y, Kuskovsky IL, Neumark GF, Zeng L, Tamargo MC. Photoluminescence of Zn xCd yMg 1-x-ySe alloys as a manifestation of the breakdown of "common-anion rule", Journal of Applied Physics. 94: 7136-7138. DOI: 10.1063/1.1625096 |
0.37 |
|
| 2003 |
Gu Y, Kuskovsky IL, Fung J, Robinson R, Herman IP, Neumark GF, Zhou X, Guo SP, Tamargo MC. Determination of size and composition of optically active CdZnSe/ZnBeSe quantum dots Applied Physics Letters. 83: 3779-3781. DOI: 10.1063/1.1623941 |
0.493 |
|
| 2003 |
Gu Y, Kuskovsky IL, Neumark GF, Zhou X, Maksimov O, Guo SP, Tamargo MC. Observation of free-to-acceptor-type photoluminescence in chlorine-doped Zn(Be)Se Journal of Luminescence. 104: 77-83. DOI: 10.1016/S0022-2313(02)00666-X |
0.426 |
|
| 2002 |
Gu Y, Kuskovsky IL, Neumark GF, Lin W, Guo SP, Maksimov O, Tamargo MC. Heavily p-type doped ZnSe using Te and N codoping Journal of Electronic Materials. 31: 799-801. DOI: 10.1007/S11664-002-0239-8 |
0.356 |
|
| 2002 |
Kuskovsky I, Gu Y, Tian C, Neumark G, Guo S, Lin W, Maksimov O, Tamargo M, Alyoshin A, Belous V. Heavily p-Type Doped ZnSe and ZnBeSe Physica Status Solidi (B). 229: 385-389. DOI: 10.1002/1521-3951(200201)229:1<385::Aid-Pssb385>3.0.Co;2-8 |
0.424 |
|
| 2002 |
Kuskovsky IL, Gu Y, Van Der Voort M, Tian C, Kim B, Herman IP, Neumark GF, Guo SP, Maksimov O, Tamargo MC. Properties of MBE-grown ZnBeSe: Study of be isoelectronic trasp and of dopant behavior Physica Status Solidi (B) Basic Research. 229: 239-243. DOI: 10.1002/1521-3951(200201)229:1<239::Aid-Pssb239>3.0.Co;2-G |
0.416 |
|
| 2002 |
Kuskovsky IL, Gu Y, Tian C, Neumark GF, Guo SP, Lin W, Maksimov O, Tamargo MC, Alyoshin AN, Belous VM. Heavily p-type doped ZnSe and ZnBeSe Physica Status Solidi (B) Basic Research. 229: 385-389. DOI: 10.1002/1521-3951(200201)229:1<385::AID-PSSB385>3.0.CO;2-8 |
0.321 |
|
| 2001 |
Guo SP, Zhou X, Maksimov O, Tamargo MC, Chi C, Couzis A, Maldarelli C, Kuskovsky IL, Neumark GF. Effects of Be on the II-VI/GaAs interface and on CdSe quantum dot formation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1635-1639. DOI: 10.1116/1.1388209 |
0.451 |
|
| 2001 |
Kuskovsky IL, Neumark GF, Tischler JG, Weinstein BA. Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure Physical Review B - Condensed Matter and Materials Physics. 63: 1612011-1612014. DOI: 10.1103/Physrevb.63.161201 |
0.359 |
|
| 2001 |
Kuskovsky IL, Tian C, Neumark GF, Spanier JE, Herman IP, Lin WC, Guo SP, Tamargo MC. Optical properties of δ-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium Physical Review B - Condensed Matter and Materials Physics. 63: 1552051-1552057. DOI: 10.1103/Physrevb.63.155205 |
0.437 |
|
| 2001 |
Kuskovsky IL, Tian C, Sudbrack C, Neumark GF, Lin WC, Guo SP, Tamargo MC. Photoluminescence of δ-doped ZnSe:(Te,N) grown by molecular beam epitaxy Journal of Applied Physics. 90: 2269-2272. DOI: 10.1063/1.1389483 |
0.41 |
|
| 2001 |
Guo SP, Lin W, Zhou X, Tamargo MC, Tian C, Kuskovsky I, Neumark GF. High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te Journal of Applied Physics. 90: 1725-1729. DOI: 10.1063/1.1384863 |
0.409 |
|
| 2001 |
Kim BS, Kuskovsky IL, Tian C, Herman IP, Neumark GF, Guo SP, Tamargo MC. Evidence of isoelectronic traps in molecular beam epitaxy grown Zn1-xBexSe: Temperature- and pressure-dependent photoluminescence studies Applied Physics Letters. 78: 4151-4153. DOI: 10.1063/1.1381039 |
0.372 |
|
| 2000 |
Lin W, Guo SP, Tamargo MC, Kuskovsky I, Tian C, Neumark GF. Enhancement of p-type doping of ZnSe using a modified (N+Te)δ -doping technique Applied Physics Letters. 76: 2205-2207. DOI: 10.1063/1.126297 |
0.395 |
|
| 2000 |
Guo SP, Luo Y, Lin W, Maksimov O, Tamargo MC, Kuskovsky I, Tian C, Neumark GF. High crystalline quality ZnBeSe grown by molecular beam epitaxy with Be-Zn co-irradiation Journal of Crystal Growth. 208: 205-210. DOI: 10.1016/S0022-0248(99)00424-8 |
0.415 |
|
| 2000 |
Kuskovsky I, Tian C, Sudbrack C, Neumark GF, Guo SP, Tamargo MC. Photoluminescence characterization of MBE grown Zn1−xBexSe Journal of Crystal Growth. 214: 335-339. DOI: 10.1016/S0022-0248(00)00108-1 |
0.443 |
|
| 1999 |
Kim B, Kuskovsky I, Herman IP, Li D, Neumark GF. Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films Journal of Applied Physics. 86: 2034-2037. DOI: 10.1063/1.371004 |
0.41 |
|
| 1999 |
Kuskovsky I, Li D, Neumark GF, Bondarev VN, Pikhitsa PV. The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials Applied Physics Letters. 75: 1243-1245. DOI: 10.1063/1.124655 |
0.363 |
|
| 1998 |
Kuskovsky I, Li D, Neumark GF, Moldovan M, Giles NC, Bondarev VN, Pikhitsa PV. Time-resolved photoluminescence of heavily nitrogen-doped ZnSe: role of fluctuations Journal of Crystal Growth. 525-530. DOI: 10.1016/S0022-0248(98)80109-7 |
0.383 |
|
| 1996 |
Kothandaraman C, Kuskovsky I, Neumark GF, Park RM. Time‐resolved luminescence studies of heavily nitrogen doped ZnSe Applied Physics Letters. 69: 1523-1525. DOI: 10.1063/1.117992 |
0.398 |
|
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