| Year |
Citation |
Score |
| 2020 |
Yun N, Kim D, Lynch J, Morgan AJ, Sung W, Kang M, Agarwal A, Green R, Lelis A. Developing 13-kV 4H-SiC MOSFETs: Significance of Implant Straggle, Channel Design, and MOS Process on Static Performance Ieee Transactions On Electron Devices. 67: 4346-4353. DOI: 10.1109/Ted.2020.3017150 |
0.347 |
|
| 2020 |
Yun N, Lynch J, Sung W. Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 16-23. DOI: 10.1109/Jestpe.2019.2947284 |
0.5 |
|
| 2020 |
Isukapati SB, Sung W. An Efficient Design Approach to Optimize the Drift Layer of Unipolar Power Devices in 4H-SiC Ieee Journal of the Electron Devices Society. 8: 176-181. DOI: 10.1109/Jeds.2020.2973675 |
0.339 |
|
| 2019 |
Yun N, Lynch J, Sung W. Demonstration and analysis of a 600 V, 10 A, 4H-SiC lateral single RESURF MOSFET for power ICs applications Applied Physics Letters. 114: 192104. DOI: 10.1063/1.5094407 |
0.452 |
|
| 2018 |
Han K, Baliga BJ, Sung W. A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results Ieee Electron Device Letters. 39: 248-251. DOI: 10.1109/Led.2017.2785771 |
0.376 |
|
| 2018 |
Jiang Y, Sung W, Baliga J, Wang S, Lee B, Huang A. Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height Journal of Electronic Materials. 47: 927-931. DOI: 10.1007/S11664-017-5812-2 |
0.427 |
|
| 2017 |
Sung W, Baliga BJ. On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET) Ieee Transactions On Industrial Electronics. 64: 8206-8212. DOI: 10.1109/Tie.2017.2696515 |
0.458 |
|
| 2017 |
Sung W, Baliga BJ. A Comparative Study 4500-V Edge Termination Techniques for SiC Devices Ieee Transactions On Electron Devices. 64: 1647-1652. DOI: 10.1109/Ted.2017.2664051 |
0.614 |
|
| 2017 |
Han K, Baliga BJ, Sung W. Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation Ieee Electron Device Letters. 38: 1437-1440. DOI: 10.1109/Led.2017.2738616 |
0.439 |
|
| 2016 |
Sung W, Baliga BJ. Design and fabrication of 1400V 4H-SiC accumulation mode MOSFETs (ACCUFETs) Materials Science Forum. 897: 517-520. DOI: 10.4028/Www.Scientific.Net/Msf.897.517 |
0.394 |
|
| 2016 |
Liu S, Jiang Y, Sung W, Song X, Baliga BJ, Sun W, Huang AQ. Understanding high temperature static and dynamic characteristics of 1.2 kV SiC power MOSFETs Materials Science Forum. 897: 501-504. DOI: 10.4028/Www.Scientific.Net/Msf.897.501 |
0.364 |
|
| 2016 |
Sung W, Baliga BJ, Huang AQ. Area-Efficient Bevel-Edge Termination Techniques for SiC High-Voltage Devices Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2532602 |
0.59 |
|
| 2016 |
Sung W, Baliga BJ. A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension Ieee Electron Device Letters. 37: 1609-1612. DOI: 10.1109/Led.2016.2623423 |
0.435 |
|
| 2016 |
Sung W, Baliga BJ. Monolithically Integrated 4H-SiC MOSFET and JBS Diode (JBSFET) Using a Single Ohmic/Schottky Process Scheme Ieee Electron Device Letters. 37: 1605-1608. DOI: 10.1109/Led.2016.2618720 |
0.436 |
|
| 2015 |
Sung W, Huang AQ, Baliga BJ. Bevel junction termination extension - A new edge termination technique for 4H-SiC high-voltage devices Ieee Electron Device Letters. 36: 594-596. DOI: 10.1109/Led.2015.2427654 |
0.619 |
|
| 2012 |
Sung W, Van Brunt E, Baliga BJ, Huang AQ. A comparative study of gate structures for 9.4-kV 4H-SiC normally on vertical JFETs Ieee Transactions On Electron Devices. 59: 2417-2423. DOI: 10.1109/Ted.2012.2203337 |
0.535 |
|
| 2011 |
Sung W, Van Brunt E, Baliga BJ, Huang AQ. A new edge termination technique for high-voltage devices in 4H-SiCMultiple-floating-zone junction termination extension Ieee Electron Device Letters. 32: 880-882. DOI: 10.1109/Led.2011.2144561 |
0.613 |
|
| 2009 |
Wang J, Huang AQ, Sung W, Liu Y, Baliga BJ. Smart grid technologies Ieee Industrial Electronics Magazine. 3: 16-23. DOI: 10.1109/Mie.2009.932583 |
0.555 |
|
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