| Year |
Citation |
Score |
| 2020 |
Kim WH, Jang YJ, Kim J, Han M, Kang M, Yang K, Ryou J, Kwon M. High-Performance Color-Converted Full-Color Micro-LED Arrays Applied Sciences. 10: 2112. DOI: 10.3390/App10062112 |
0.318 |
|
| 2020 |
Song Y, Lundh JS, Wang W, Leach JH, Eichfeld D, Krishnan A, Perez C, Ji D, Borman T, Ferri K, Maria J, Chowdhury S, Ryou J, Foley BM, Choi S. The Doping Dependence of the Thermal Conductivity of Bulk Gallium Nitride Substrates Journal of Electronic Packaging. 142. DOI: 10.1115/1.4047578 |
0.334 |
|
| 2020 |
Wang W, Chen J, Lundh JS, Shervin S, Oh SK, Pouladi S, Rao Z, Kim JY, Kwon M, Li X, Choi S, Ryou J. Modulation of the two-dimensional electron gas channel in flexible AlGaN/GaN high-electron-mobility transistors by mechanical bending Applied Physics Letters. 116: 123501. DOI: 10.1063/1.5142546 |
0.412 |
|
| 2020 |
Kim J, Cho Y, Chung T, Jang YJ, Kim WH, Bang S, Lee A, Jeong MS, Ryou J, Kwon M. Localized surface plasmon-enhanced transparent conducting electrode for high-efficiency light emitting diode Materials Letters. 271: 127790. DOI: 10.1016/J.Matlet.2020.127790 |
0.349 |
|
| 2019 |
Kim J, Cho Y, Park H, Ryou J, Kwon M. Mass Transfer of Microscale Light-Emitting Diodes to Unusual Substrates by Spontaneously Formed Vertical Tethers During Chemical Lift-Off Applied Sciences. 9: 4243. DOI: 10.3390/App9204243 |
0.407 |
|
| 2019 |
Oh SK, Lundh JS, Shervin S, Chatterjee B, Lee DK, Choi S, Kwak JS, Ryou J. Thermal Management and Characterization of High-Power Wide-Bandgap Semiconductor Electronic and Photonic Devices in Automotive Applications Journal of Electronic Packaging. 141. DOI: 10.1115/1.4041813 |
0.362 |
|
| 2019 |
Ren Z, Lu Y, Yao H, Sun H, Liao C, Dai J, Chen C, Ryou J, Yan J, Wang J, Li J, Li X. III-Nitride Deep UV LED Without Electron Blocking Layer Ieee Photonics Journal. 11: 1-11. DOI: 10.1109/Jphot.2019.2902125 |
0.441 |
|
| 2019 |
Wang W, Lee SM, Pouladi S, Chen J, Shervin S, Yoon S, Yum JH, Larsen ES, Bielawski CW, Chatterjee B, Choi S, Oh J, Ryou J. Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 115: 103502. DOI: 10.1063/1.5108832 |
0.478 |
|
| 2019 |
Li Y, Gao Y, Yao Y, Sun S, Khatiwada D, Pouladi S, Galstyan E, Rathi M, Dutta P, Litvinchuk AP, Ryou J, Selvamanickam V. Direct synthesis of biaxially textured nickel disilicide thin films by magnetron sputter deposition on low-cost metal tapes for flexible silicon devices Applied Physics Letters. 114: 083502. DOI: 10.1063/1.5080283 |
0.397 |
|
| 2019 |
Pouladi S, Asadirad M, Oh SK, Shervin S, Chen J, Wang W, Manh C, Choi R, Kim J, Khatiwada D, Rathi M, Dutta P, Selvamanickam V, Ryou J. Effects of grain boundaries on conversion efficiencies of single-crystal-like GaAs thin-film solar cells on flexible metal tapes Solar Energy Materials and Solar Cells. 199: 122-128. DOI: 10.1016/J.Solmat.2019.04.032 |
0.336 |
|
| 2019 |
Chen J, Oh SK, Nabulsi N, Johnson H, Wang W, Ryou J. Biocompatible and sustainable power supply for self-powered wearable and implantable electronics using III-nitride thin-film-based flexible piezoelectric generator Nano Energy. 57: 670-679. DOI: 10.1016/J.Nanoen.2018.12.080 |
0.346 |
|
| 2019 |
Chen J, Nabulsi N, Wang W, Kim JY, Kwon M, Ryou J. Output characteristics of thin-film flexible piezoelectric generators: A numerical and experimental investigation Applied Energy. 255: 113856. DOI: 10.1016/J.Apenergy.2019.113856 |
0.347 |
|
| 2018 |
Son KJ, Kim TK, Cha YJ, Oh SK, You SJ, Ryou JH, Kwak JS. Impact of Plasma Electron Flux on Plasma Damage-Free Sputtering of Ultrathin Tin-Doped Indium Oxide Contact Layer on-GaN for InGaN/GaN Light-Emitting Diodes. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1700637. PMID 29619312 DOI: 10.1002/Advs.201700637 |
0.372 |
|
| 2018 |
Chen J, Oh SK, Zou H, Shervin S, Wang W, Pouladi S, Zi Y, Wang ZL, Ryou JH. High-output lead-free flexible piezoelectric generator using single-crystalline GaN thin film. Acs Applied Materials & Interfaces. PMID 29595054 DOI: 10.1021/Acsami.8B01281 |
0.384 |
|
| 2018 |
Jeong S, Oh SK, Ryou JH, Ahn KS, Song KM, Kim H. Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes. Acs Applied Materials & Interfaces. PMID 29319292 DOI: 10.1021/Acsami.7B15946 |
0.48 |
|
| 2018 |
Li Y, Guo H, Yao Y, Dutta P, Rathi M, Zheng N, Gao Y, Sun S, Ryou J, Ahrenkiel P, Selvamanickam V. Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates Crystengcomm. 20: 6573-6579. DOI: 10.1039/C8Ce01258J |
0.304 |
|
| 2018 |
Sun H, Priante D, Min J, Subedi RC, Shakfa MK, Ren Z, Li K, Lin R, Zhao C, Ng TK, Ryou J, Zhang X, Ooi BS, Li X. Graded-Index Separate Confinement Heterostructure AlGaN Nanowires: Toward Ultraviolet Laser Diodes Implementation Acs Photonics. 5: 3305-3314. DOI: 10.1021/Acsphotonics.8B00538 |
0.498 |
|
| 2018 |
Kim TK, Cho MU, Lee JM, Cha Y, Oh SK, Chatterjee B, Ryou J, Choi S, Kwak JS. Improved Light Output Power of 16 × 16 Pixelated Micro-LEDs for Headlights by Enhancing the Reflectivity and Coverage of the p
-Electrode (Phys. Status Solidi A 10∕2018) Physica Status Solidi (a). 215: 1870019. DOI: 10.1002/Pssa.201870019 |
0.302 |
|
| 2018 |
Pouladi S, Rathi M, Khatiwada D, Asadirad M, Oh SK, Dutta P, Yao Y, Gao Y, Sun S, Li Y, Shervin S, Lee K, Selvamanickam V, Ryou J. High-efficiency flexible III-V photovoltaic solar cells based on single-crystal-like thin films directly grown on metallic tapes Progress in Photovoltaics: Research and Applications. 27: 30-36. DOI: 10.1002/Pip.3070 |
0.307 |
|
| 2017 |
Lee SM, Yum JH, Yoon S, Larsen ES, Lee WC, Kim SK, Shervin S, Wang W, Ryou JH, Bielawski CW, Oh J. Atomic layer deposition of single-crystalline BeO epitaxially grown on GaN substrates. Acs Applied Materials & Interfaces. PMID 29148718 DOI: 10.1021/acsami.7b13487 |
0.312 |
|
| 2017 |
Jung E, Jeong S, Ryou J, Kim H. Deep-Trap States of GaN-Based Light Emitting Diodes Analyzed by Space Charge Limited Conduction Model Journal of Nanoscience and Nanotechnology. 17: 7339-7343. DOI: 10.1166/Jnn.2017.14735 |
0.313 |
|
| 2017 |
Baek M, Oh M, Parida B, Kim MS, Ryou J, Kim H. Hybrid Oblique-Angle Deposited ITO/Silver Nanowire Transparent Conductive Electrodes for Brighter Light Emitters Ieee Transactions On Electron Devices. 64: 3690-3695. DOI: 10.1109/Ted.2017.2730439 |
0.391 |
|
| 2017 |
Wang W, Shervin S, Oh SK, Chen J, Huai Y, Pouladi S, Kim H, Lee S, Ryou J. Flexible AlGaInN/GaN Heterostructures for High-Hole-Mobility Transistors Ieee Electron Device Letters. 38: 1086-1089. DOI: 10.1109/Led.2017.2720480 |
0.417 |
|
| 2017 |
Asadirad M, Pouladi S, Shervin S, Oh SK, Lee KH, Kim J, Lee S, Gao Y, Dutta P, Selvamanickam V, Ryou J. Numerical Simulation for Operation of Flexible Thin-Film Transistors With Bending Ieee Electron Device Letters. 38: 217-220. DOI: 10.1109/Led.2016.2645451 |
0.323 |
|
| 2017 |
Oh SK, Cho MU, Dallas J, Jang T, Lee DG, Pouladi S, Chen J, Wang W, Shervin S, Kim H, Shin S, Choi S, Kwak JS, Ryou J. High-power flexible AlGaN/GaN heterostructure field-effect transistors with suppression of negative differential conductance Applied Physics Letters. 111: 133502. DOI: 10.1063/1.5004799 |
0.386 |
|
| 2017 |
Parida B, Kim S, Oh M, Jung S, Baek M, Ryou J, Kim H. Nanostructured-NiO/Si heterojunction photodetector Materials Science in Semiconductor Processing. 71: 29-34. DOI: 10.1016/J.Mssp.2017.07.002 |
0.385 |
|
| 2017 |
Lee J, Han S, Song K, Ryou J, Na H, Lee S. Effect of SiO2 hexagonal pattern on the crystal and optical properties of epitaxial lateral overgrown semipolar (11-22) GaN film Microelectronic Engineering. 168: 32-36. DOI: 10.1016/J.Mee.2016.10.017 |
0.331 |
|
| 2017 |
Oh M, Jeong HJ, Jeong MS, Ahn K, Kim K, Ryou J, Kim H. Functional hybrid indium-tin-oxide transparent conductive electrodes for light-emitters Journal of Alloys and Compounds. 724: 813-819. DOI: 10.1016/J.Jallcom.2017.07.042 |
0.399 |
|
| 2017 |
Kim S, Ahn K, Ryou J, Kim H. Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors Electronic Materials Letters. 13: 302-306. DOI: 10.1007/S13391-017-1606-1 |
0.357 |
|
| 2017 |
Singh S, Yarali M, Shervin S, Venkateswaran V, Olenick K, Olenick JA, Ryou J, Mavrokefalos A. Temperature-dependent thermal conductivity of flexible yttria-stabilized zirconia substrate via 3ω technique Physica Status Solidi (a). 214: 1700069. DOI: 10.1002/Pssa.201700069 |
0.314 |
|
| 2017 |
Lee W, Muhammad S, Kim T, Kim H, Lee E, Jeong M, Son S, Ryou J, Yoon W. New Insight into Ni-Rich Layered Structure for Next-Generation Li Rechargeable Batteries Advanced Energy Materials. 8: 1701788. DOI: 10.1002/Aenm.201701788 |
0.323 |
|
| 2016 |
Gao Y, Asadirad M, Yao Y, Dutta P, Galstyan E, Shervin S, Lee KH, Pouladi S, Sun S, Li Y, Rathi M, Ryou JH, Selvamanickam V. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-Like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process. Acs Applied Materials & Interfaces. PMID 27734670 DOI: 10.1021/Acsami.6B06770 |
0.391 |
|
| 2016 |
Oh SK, Jang T, Pouladi S, Jo YJ, Ko H, Ryou J, Kwak JS. Output power enhancement in AlGaN/GaN heterostructure field-effect transistors with multilevel metallization Applied Physics Express. 10: 016502. DOI: 10.7567/Apex.10.016502 |
0.43 |
|
| 2016 |
Park HJ, Bae HJ, Park JB, Ha JS, Jeong T, Baek JH, Kim SH, Ryou JH. Enhanced wall-plug efficiency in monolithically integrated vertical light-emitting-diode cells based on III-nitride heterostructures Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4943941 |
0.381 |
|
| 2016 |
Lee KH, Asadirad M, Shervin S, Oh SK, Oh JT, Song JO, Moon YT, Ryou JH. Thin-Film-Flip-Chip LEDs Grown on Si Substrate Using Wafer-Level Chip-Scale Package Ieee Photonics Technology Letters. 28: 1956-1959. DOI: 10.1109/Lpt.2016.2580039 |
0.424 |
|
| 2016 |
Kim SH, Singh S, Oh SK, Lee DK, Lee KH, Shervin S, Asadirad M, Venkateswaran V, Olenick K, Olenick JA, Lee SN, Kwak JS, Mavrokefalos A, Ryou JH. Visible Flip-Chip Light-Emitting Diodes on Flexible Ceramic Substrate With Improved Thermal Management Ieee Electron Device Letters. 37: 615-617. DOI: 10.1109/Led.2016.2547877 |
0.351 |
|
| 2016 |
Brahmi H, Ravipati S, Yarali M, Shervin S, Wang W, Ryou J, Mavrokefalos A. Electrical and optical properties of sub-10 nm nickel silicide films for silicon solar cells Journal of Physics D: Applied Physics. 50: 035102. DOI: 10.1088/1361-6463/50/3/035102 |
0.354 |
|
| 2016 |
Kim S, Ryou JH, Dupuis RD, Kim H. Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors Electronics Letters. 52: 157-159. DOI: 10.1049/El.2015.3430 |
0.536 |
|
| 2016 |
Shervin S, Kim SH, Asadirad M, Karpov SY, Zimina D, Ryou JH. Bendable III-N Visible Light-Emitting Diodes beyond Mechanical Flexibility: Theoretical Study on Quantum Efficiency Improvement and Color Tunability by External Strain Acs Photonics. 3: 486-493. DOI: 10.1021/Acsphotonics.5B00745 |
0.412 |
|
| 2016 |
Kim SH, Lee KH, Park HJ, Shervin S, Asadirad M, Lee SN, Kwak JS, Ryou JH. Patterned Ga2O3 for current blocking and optical scattering in visible light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201600240 |
0.362 |
|
| 2016 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Shervin S, Ryou JH. Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 213: 1296-1301. DOI: 10.1002/Pssa.201532764 |
0.588 |
|
| 2016 |
Asadirad M, Gao Y, Dutta P, Shervin S, Sun S, Ravipati S, Kim SH, Yao Y, Lee KH, Litvinchuk AP, Selvamanickam V, Ryou JH. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-Like Germanium on Glass Advanced Electronic Materials. 2. DOI: 10.1002/Aelm.201600041 |
0.416 |
|
| 2015 |
Lee KH, Park HJ, Kim SH, Asadirad M, Moon YT, Kwak JS, Ryou JH. Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes. Optics Express. 23: 20340-9. PMID 26367889 DOI: 10.1364/Oe.23.020340 |
0.416 |
|
| 2015 |
Yu YJ, Kim KS, Nam J, Kwon SR, Byun H, Lee K, Ryou JH, Dupuis RD, Kim J, Ahn G, Ryu S, Ryu MY, Kim JS. Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene. Nano Letters. 15: 896-902. PMID 25562118 DOI: 10.1021/Nl503624J |
0.503 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Ryou JH, Sood AK, Dhar ND, Lewis J. Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.122202 |
0.629 |
|
| 2015 |
Shen SC, Kao TT, Kim HJ, Lee YC, Kim J, Ji MH, Ryou JH, Detchprohm T, Dupuis RD. GaN/InGaN avalanche phototransistors Applied Physics Express. 8. DOI: 10.7567/Apex.8.032101 |
0.582 |
|
| 2015 |
Oh HM, Lee CR, Kim JS, Pyun K, Lee KJ, Jeong MS, Kim YH, Leem JY, Ryou JH. Periodic variation in the electroluminescence intensity on a single pattern from InGaN/GaN light-emitting diodes fabricated on lens-shaped patterns Journal of the Korean Physical Society. 66: 266-269. DOI: 10.3938/Jkps.66.266 |
0.348 |
|
| 2015 |
Liu YS, Kao TT, Satter MM, Lochner Z, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Ryou JH, Fischer AM, Wei YO, Xie H, Ponce FA. Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters Ieee Photonics Technology Letters. 27: 1768-1771. DOI: 10.1109/Lpt.2015.2443053 |
0.596 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Ryou JH, Dupuis RD, Sood AK, Dhar NK. AlxGa1-xN ultraviolet avalanche photodiodes with avalanche gain greater than 105 Ieee Photonics Technology Letters. 27: 642-645. DOI: 10.1109/Lpt.2015.2388552 |
0.639 |
|
| 2015 |
Lee KH, Kim SH, Lim WS, Song JO, Ryou JH. Visible Light-Emitting Diodes with Thin-Film-Flip- Chip-Based Wafer-Level Chip-Scale Package Technology Using Anisotropic Conductive Film Bonding Ieee Electron Device Letters. 36: 702-704. DOI: 10.1109/Led.2015.2434053 |
0.383 |
|
| 2015 |
Liu H, Yue N, Zhang Y, Qiao P, Zuo D, Kesler B, Chuang SL, Ryou JH, Justice JD, Dupuis R. Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.235317 |
0.445 |
|
| 2015 |
Kao TT, Lee YC, Kim HJ, Ryou JH, Kim J, Detchprohm T, Dupuis RD, Shen SC. Radiative recombination in GaN/InGaN heterojunction bipolar transistors Applied Physics Letters. 107. DOI: 10.1063/1.4938147 |
0.535 |
|
| 2015 |
Li X, Xie H, Ponce FA, Ryou JH, Detchprohm T, Dupuis RD. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4938136 |
0.599 |
|
| 2015 |
Shervin S, Kim SH, Asadirad M, Ravipati S, Lee KH, Bulashevich K, Ryou JH. Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates Applied Physics Letters. 107. DOI: 10.1063/1.4935537 |
0.361 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA, Ryou JH. Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition Journal of Applied Physics. 118. DOI: 10.1063/1.4931456 |
0.531 |
|
| 2014 |
Ryou JH, Kim J, Choi S, Kim HJ, Lochner Z, Ji MH, Satter MM, Detchprohm T, Yoder PD, Dupuis RD, Asadirad M, Liu JP, Kim JS, Fischere AM, Juday R, et al. Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes Ecs Transactions. 61: 109-116. DOI: 10.1149/06104.0109ecst |
0.475 |
|
| 2014 |
Jo B, Lee CR, Kim JS, Han WS, Song JH, Choi JH, Ryou JH, Lee JH, Leem JY. High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer Laser Physics Letters. 11. DOI: 10.1088/1612-2011/11/11/115815 |
0.412 |
|
| 2014 |
Kim J, Ji MH, Yuan D, Guo R, Liu J, Asadirad M, Detchprohm T, Kwon MK, Dupuis RD, Das S, Ryou JH. Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation Applied Physics Letters. 104. DOI: 10.1063/1.4871089 |
0.576 |
|
| 2014 |
Sidler M, Rauter P, Blanchard R, Métivier P, Mansuripur TS, Wang C, Huang Y, Ryou JH, Dupuis RD, Faist J, Capasso F. Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity Applied Physics Letters. 104. DOI: 10.1063/1.4863663 |
0.523 |
|
| 2014 |
Jo B, Lee CR, Kim JS, Han WS, Song JH, Leem JY, Noh SK, Ryou JH, Dupuis RD. Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures Journal of Crystal Growth. 393: 59-63. DOI: 10.1016/J.Jcrysgro.2013.11.038 |
0.6 |
|
| 2014 |
Satter MM, Liu YS, Kao TT, Lochner Z, Li X, Ryou JH, Shen SC, Detchprohm T, Dupuis RD, Yoder PD. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 828-831. DOI: 10.1002/Pssc.201300679 |
0.598 |
|
| 2014 |
Liu YS, Lochner Z, Kao TT, Satter MM, Li XH, Ryou JH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce F. Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 258-260. DOI: 10.1002/Pssc.201300213 |
0.553 |
|
| 2013 |
Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Ti/Al contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma07 |
0.534 |
|
| 2013 |
Kim S, Kim HJ, Choi S, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma05 |
0.552 |
|
| 2013 |
Ryou JH. Gallium nitride (GaN) on sapphire substrates for visible LEDs Nitride Semiconductor Light-Emitting Diodes (Leds): Materials, Technologies and Applications. 66-98. DOI: 10.1533/9780857099303.1.66 |
0.308 |
|
| 2013 |
Dupuis RD, Kim J, Lee YC, Lochner Z, Ji MH, Kao TT, Ryou JH, Detchphrom T, Shen SC. III-N high-power bipolar transistors Ecs Transactions. 58: 261-267. DOI: 10.1149/05804.0261ecst |
0.537 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2008830 |
0.601 |
|
| 2013 |
Dupuis RD, Kim J, Kao TT, Lee YC, Lochner Z, Ji MH, Ryou JH, Detchphrom T, Shen SC. Bipolar III-N high-power electronic devices 1st Ieee Workshop On Wide Bandgap Power Devices and Applications, Wipda 2013 - Proceedings. 96-99. DOI: 10.1109/WiPDA.2013.6695571 |
0.556 |
|
| 2013 |
Kim J, Ji MH, Lochner Z, Choi S, Sebkhi N, Liu J, Satter MM, Kim JS, Yoder PD, Dupuis RD, Juday R, Fischer AM, Ponce FA, Ryou JH. Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs Ieee Photonics Technology Letters. 25: 1789-1792. DOI: 10.1109/Lpt.2013.2275791 |
0.592 |
|
| 2013 |
Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based lateral current injection laser diodes using regrown ohmic contacts Ieee Photonics Technology Letters. 25: 313-316. DOI: 10.1109/Lpt.2012.2235826 |
0.586 |
|
| 2013 |
Shen SC, Dupuis RD, Lochner Z, Lee YC, Kao TT, Zhang Y, Kim HJ, Ryou JH. Working toward high-power GaN/InGaN heterojunction bipolar transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074025 |
0.605 |
|
| 2013 |
Kao TT, Liu YS, Mahbub Satter M, Li XH, Lochner Z, Douglas Yoder P, Detchprohm T, Dupuis RD, Shen SC, Ryou JH, Fischer AM, Wei Y, Xie H, Ponce FA. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Applied Physics Letters. 103. DOI: 10.1063/1.4829477 |
0.594 |
|
| 2013 |
Juday R, Fischer AM, Huang Y, Huang JY, Kim HJ, Ryou JH, Dupuis RD, Bour DP, Ponce FA. Hydrogen-related, deeply bound excitons in Mg-doped GaN films Applied Physics Letters. 103. DOI: 10.1063/1.4819029 |
0.464 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Mahbub Satter M, Shen SC, Douglas Yoder P, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Applied Physics Letters. 102. DOI: 10.1063/1.4795719 |
0.632 |
|
| 2013 |
Kim S, Ryou JH, Dupuis RD, Kim H. Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4790384 |
0.549 |
|
| 2013 |
Li T, Wei QY, Fischer AM, Huang JY, Huang YU, Ponce FA, Liu JP, Lochner Z, Ryou JH, Dupuis RD. The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells Applied Physics Letters. 102. DOI: 10.1063/1.4789758 |
0.5 |
|
| 2013 |
Choi S, Jin Kim H, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.10.006 |
0.563 |
|
| 2013 |
Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.09.046 |
0.559 |
|
| 2013 |
Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou J. WITHDRAWN: Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.03.029 |
0.565 |
|
| 2013 |
Hwang J, Lee K, Kim JS, Lee CR, Lee IH, Lee JH, Leem JY, Ryou JH, Dupuis RD. Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer Journal of Crystal Growth. 370: 109-113. DOI: 10.1016/J.Jcrysgro.2012.08.049 |
0.632 |
|
| 2013 |
Lochner Z, Li XH, Kao TT, Satter MM, Kim HJ, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Sun K, Wei Y, Li T, Fischer A, Ponce FA. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Physica Status Solidi (a) Applications and Materials Science. 210: 1768-1770. DOI: 10.1002/Pssa.201329013 |
0.635 |
|
| 2012 |
Mansuripur TS, Menzel S, Blanchard R, Diehl L, Pflügl C, Huang Y, Ryou JH, Dupuis RD, Loncar M, Capasso F. Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors. Optics Express. 20: 23339-48. PMID 23188297 DOI: 10.1364/Oe.20.023339 |
0.544 |
|
| 2012 |
Park DW, Lee CR, Kim JS, Lee SJ, Kim YH, Noh SK, Oh HM, Leem JY, Jeong MS, Ryou JH. Formation characteristics of a self-catalyzed GaAs nanowire without a Ga droplet on Si(111) Journal of the Korean Physical Society. 61: 2017-2021. DOI: 10.3938/Jkps.61.2017 |
0.396 |
|
| 2012 |
Sood AK, Welser RE, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Suvarna P, Shahedipour-Sandvik F. Development of small unit cell avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8375. DOI: 10.1117/12.923182 |
0.509 |
|
| 2012 |
Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Growth and characterization of InxGa1-xN alloys by metalorganic chemical vapor deposition for solar cell applications Journal of Photonics For Energy. 2. DOI: 10.1117/1.Jpe.2.028501 |
0.579 |
|
| 2012 |
Satter MM, Kim HJ, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers Ieee Journal of Quantum Electronics. 48: 703-711. DOI: 10.1109/Jqe.2012.2190496 |
0.59 |
|
| 2012 |
Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Polarization matching in algan-based multiple-quantum-well deep ultraviolet laser diodes on aln substrates using quaternary AlInGaN barriers Journal of Lightwave Technology. 30: 3017-3025. DOI: 10.1109/Jlt.2012.2210998 |
0.596 |
|
| 2012 |
Choi S, Ji MH, Kim J, Jin Kim H, Satter MM, Yoder PD, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers Applied Physics Letters. 101. DOI: 10.1063/1.4759044 |
0.583 |
|
| 2012 |
Abid M, Moudakir T, Orsal G, Gautier S, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Largeau L, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications Applied Physics Letters. 100. DOI: 10.1063/1.3679703 |
0.506 |
|
| 2012 |
Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Double-waveguide quantum cascade laser Applied Physics Letters. 100. DOI: 10.1063/1.3678033 |
0.601 |
|
| 2012 |
Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Kim H. Carrier transport properties of Mg-doped InAlN films Electronics Letters. 48: 1306-1308. DOI: 10.1049/El.2012.2238 |
0.463 |
|
| 2012 |
Lee YC, Zhang Y, Lochner ZM, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3MW/cm 2) Physica Status Solidi (a) Applications and Materials Science. 209: 497-500. DOI: 10.1002/Pssa.201100436 |
0.571 |
|
| 2012 |
Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Vertical monolithic integration of quantum cascade lasers for high-power broadband applications 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.468 |
|
| 2011 |
Zhang Y, Hamsen C, Choy JT, Huang Y, Ryou JH, Dupuis RD, Loncar M. Photonic crystal disk lasers. Optics Letters. 36: 2704-6. PMID 21765515 DOI: 10.1364/Ol.36.002704 |
0.519 |
|
| 2011 |
Ryou JH, Dupuis RD. Focus issue: Optics in LEDs for lighting. Optics Express. 19: A897-9. PMID 21747559 DOI: 10.1364/Oe.19.00A897 |
0.468 |
|
| 2011 |
Dupuis RD, Shen SC, Lochner ZM, Kim HJ, Lee YC, Zhang Y, Wang CY, Ryou JH. III-nitride heterojunction field-effect transistors and heterojunction bipolar transistors for next-generation power electronics Ecs Transactions. 41: 73-85. DOI: 10.1149/1.3631487 |
0.492 |
|
| 2011 |
Zhang Y, Liu JP, Kao TT, Kim S, Lee YC, Lochner Z, Ryou JH, Yoder PD, Dupuis RD, Shen SC. Performance enhancement of InGaN-based laser diodes using a step-graded Al xGa 1-xN electron blocking layer International Journal of High Speed Electronics and Systems. 20: 515-520. DOI: 10.1142/S0129156411006805 |
0.53 |
|
| 2011 |
Shen SC, Dupuis RD, Lee YC, Kim HJ, Zhang Y, Lochner Z, Yoder PD, Ryou JH. GaN/InGaN heterojunction bipolar transistors with fT} >5GHz Ieee Electron Device Letters. 32: 1065-1067. DOI: 10.1109/Led.2011.2156378 |
0.567 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD. Epitaxial structure design of a long-wavelength InAlGaAs/InP transistor laser Ieee Journal of Quantum Electronics. 47: 642-650. DOI: 10.1109/Jqe.2011.2108636 |
0.597 |
|
| 2011 |
Blanchard R, Menzel S, Pflügl C, Diehl L, Wang C, Huang Y, Ryou JH, Dupuis RD, Dal Negro L, Capasso F. Gratings with an aperiodic basis: Single-mode emission in multi-wavelength lasers New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/11/113023 |
0.452 |
|
| 2011 |
Steenbergen EH, Huang Y, Ryou JH, Dupuis RD, Nunna K, Huffaker DL, Zhang YH. Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices Aip Conference Proceedings. 1416: 122-125. DOI: 10.1063/1.3671713 |
0.469 |
|
| 2011 |
Lochner Z, Jin Kim H, Lee YC, Zhang Y, Choi S, Shen SC, Doug Yoder P, Ryou JH, Dupuis RD. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate Applied Physics Letters. 99. DOI: 10.1063/1.3659475 |
0.642 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N, Kuciauskas D. Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Applied Physics Letters. 99. DOI: 10.1063/1.3633345 |
0.561 |
|
| 2011 |
Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Compositional instability in strained InGaN epitaxial layers induced by kinetic effects Journal of Applied Physics. 110. DOI: 10.1063/1.3626434 |
0.577 |
|
| 2011 |
Steenbergen EH, Huang Y, Ryou JH, Ouyang L, Li JJ, Smith DJ, Dupuis RD, Zhang YH. Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3625429 |
0.536 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Zuo D, Kesler B, Chuang SL, Hu H, Kim KH, Ting Lu Y, Hsieh KC, Zuo JM. Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3609240 |
0.567 |
|
| 2011 |
Zhang Y, Kao TT, Liu J, Lochner Z, Kim SS, Ryou JH, Dupuis RD, Shen SC. Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3581080 |
0.633 |
|
| 2011 |
Kim H, Kim KK, Lee SN, Ryou JH, Dupuis RD. Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides Applied Physics Letters. 98. DOI: 10.1063/1.3567796 |
0.549 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer Journal of Applied Physics. 109. DOI: 10.1063/1.3561368 |
0.632 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD. Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates Journal of Crystal Growth. 321: 60-64. DOI: 10.1016/J.Jcrysgro.2011.02.039 |
0.566 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Pflgl C, Capasso F, Sun K, Fischer AM, Ponce FA. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition Journal of Crystal Growth. 316: 75-80. DOI: 10.1016/J.Jcrysgro.2010.12.028 |
0.631 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003 |
0.506 |
|
| 2011 |
Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Doug Yoder P, Dupuis RD, Wei QY, Sun KW, Fischer AM, Ponce FA. Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition Journal of Crystal Growth. 315: 272-277. DOI: 10.1016/J.Jcrysgro.2010.09.071 |
0.589 |
|
| 2011 |
Lochner Z, Jin Kim H, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD. Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases Journal of Crystal Growth. 315: 278-282. DOI: 10.1016/J.Jcrysgro.2010.08.034 |
0.595 |
|
| 2011 |
Yoder PD, Sridharan S, Graham S, Shen SC, Ryou JH, Dupuis RD. Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2285-2287. DOI: 10.1002/Pssc.201001143 |
0.465 |
|
| 2011 |
Zhang Y, Lee YC, Lochner Z, Kim HJ, Choi S, Ryou JH, Dupuis RD, Shen SC. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2 Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2451-2453. DOI: 10.1002/Pssc.201001098 |
0.576 |
|
| 2011 |
Zhang Y, Lee YC, Lochner Z, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with collector current density > 20 kA/cm2 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011. |
0.512 |
|
| 2011 |
Abid M, Moudakir T, Gautier S, Orsal G, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, Ougazzaden A. New generation of distributed bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications Optics Infobase Conference Papers. |
0.478 |
|
| 2010 |
Xu S, Xu C, Liu Y, Hu Y, Yang R, Yang Q, Ryou JH, Kim HJ, Lochner Z, Choi S, Dupuis R, Wang ZL. Ordered nanowire array blue/near-UV light emitting diodes. Advanced Materials (Deerfield Beach, Fla.). 22: 4749-53. PMID 20862713 DOI: 10.1002/Adma.201002134 |
0.548 |
|
| 2010 |
Fischer AM, Sun KW, Juday R, Ponce FA, Ryou JH, Kim HJ, Choi S, Kim SS, Dupuis RD. Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.031003 |
0.629 |
|
| 2010 |
Sood AK, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Balcerak RS. Development of GaN/AlGaN APD's for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.866361 |
0.518 |
|
| 2010 |
Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Yoder PD, Dupuis RD, Wei Q, Sun K, Fischer A, Ponce F. Performance improvement of InGaN-based laser diodes by epitaxial layer structure design Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842334 |
0.561 |
|
| 2010 |
Lee YC, Zhang Y, Kim HJ, Choi S, Lochner Z, Dupuis RD, Ryou JH, Shen SC. High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors Ieee Transactions On Electron Devices. 57: 2964-2969. DOI: 10.1109/Ted.2010.2064316 |
0.61 |
|
| 2010 |
Venkatachalam A, Klein B, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design strategies for InGaN-based green lasers Ieee Journal of Quantum Electronics. 46: 238-245. DOI: 10.1109/Jqe.2009.2029348 |
0.577 |
|
| 2010 |
Zhang Y, Khan M, Huang Y, Ryou J, Deotare P, Dupuis R, Lončar M. Photonic crystal nanobeam lasers Applied Physics Letters. 97: 051104. DOI: 10.1063/1.3475397 |
0.489 |
|
| 2010 |
Huang Y, Ryou JH, Dupuis RD, Petschke A, Mandl M, Chuang SL. InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3456386 |
0.604 |
|
| 2010 |
Choi S, Kim HJ, Lochner Z, Zhang Y, Lee YC, Shen SC, Ryou JH, Dupuis RD. Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation Applied Physics Letters. 96. DOI: 10.1063/1.3446891 |
0.586 |
|
| 2010 |
Choi S, Kim HJ, Kim SS, Liu J, Kim J, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer Applied Physics Letters. 96. DOI: 10.1063/1.3441373 |
0.595 |
|
| 2010 |
Kim HJ, Choi S, Kim SS, Ryou JH, Yoder PD, Dupuis RD, Fischer AM, Sun K, Ponce FA. Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes Applied Physics Letters. 96. DOI: 10.1063/1.3353995 |
0.623 |
|
| 2010 |
Petschke A, Mandl M, Chuang SL, Huang Y, Ryou JH, Dupuis RD. Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes Electronics Letters. 46: 1151-1152. DOI: 10.1049/El.2010.1308 |
0.485 |
|
| 2010 |
Kim HJ, Choi S, Yoo D, Ryou JH, Hawkridge ME, Liliental-Weber Z, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of ternary algan with binary AIN and GaN sub-layers and observation of compositional inhomogeneity Journal of Electronic Materials. 39: 466-472. DOI: 10.1007/S11664-010-1098-3 |
0.587 |
|
| 2010 |
Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1970-1973. DOI: 10.1002/Pssc.200983555 |
0.568 |
|
| 2010 |
Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. Study on the base recombination current in direct-growth npn GaN/InGaN DHBTs 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010. |
0.56 |
|
| 2009 |
Choi S, Kim HJ, Zhang Y, Bai X, Yoo D, Limb J, Ryou JH, Shen SC, Yoder PD, Dupuis RD. Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 21: 1526-1528. DOI: 10.1109/Lpt.2009.2029073 |
0.593 |
|
| 2009 |
Shen SC, Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH. Surface leakage in GaN/InGaN double heterojunction bipolar transistors Ieee Electron Device Letters. 30: 1119-1121. DOI: 10.1109/Led.2009.2030373 |
0.581 |
|
| 2009 |
Kim H, Ryou JH, Dupuis RD, Jang T, Park Y, Lee SN, Seong TY. Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN Ieee Electron Device Letters. 30: 319-321. DOI: 10.1109/Led.2009.2013486 |
0.556 |
|
| 2009 |
Ryou JH, Yoder PD, Liu J, Lochner Z, Kim HS, Choi S, Kim HJ, Dupuis RD. Control of quantum-confined stark effect in InGaN-based quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 15: 1080-1091. DOI: 10.1109/Jstqe.2009.2014170 |
0.537 |
|
| 2009 |
Choi S, Kim HJ, Ryou JH, Dupuis RD. Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition Journal of Applied Physics. 106. DOI: 10.1063/1.3238488 |
0.56 |
|
| 2009 |
Zhang Y, Shen SC, Kim HJ, Choi S, Ryou JH, Dupuis RD, Narayan B. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates Applied Physics Letters. 94. DOI: 10.1063/1.3148812 |
0.563 |
|
| 2009 |
Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth Applied Physics Letters. 94. DOI: 10.1063/1.3129870 |
0.558 |
|
| 2009 |
Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. The structural quality of AlxGa1-xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy Applied Physics Letters. 94. DOI: 10.1063/1.3086280 |
0.585 |
|
| 2009 |
Choi S, Kim HJ, Ryou JH, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1-xN layers with AlN and AlyGa1-yN monolayers Journal of Crystal Growth. 311: 3252-3256. DOI: 10.1016/J.Jcrysgro.2009.03.041 |
0.577 |
|
| 2009 |
Liu JP, Limb J, Lochner Z, Yoo D, Ryou JH, Dupuis RD. Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 750-753. DOI: 10.1002/Pssa.200824366 |
0.62 |
|
| 2008 |
Dupuis RD, Dongwon Y, Ryou JH, Yun Z, Shen SC, Limb J, Yoder PD, Hanser AD, Preble E, Evans K. Growth and characterization of high-performance GaN and Al xGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Materials Research Society Symposium Proceedings. 1040: 13-18. DOI: 10.1557/Proc-1040-Q03-03 |
0.651 |
|
| 2008 |
Dupuis RD, Limb JB, Liu J, Ryou JH, Horne C, Yoo D. InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.766915 |
0.451 |
|
| 2008 |
Ryou JH, Limb J, Lee W, Liu J, Lochner Z, Yoo D, Dupuis RD. Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes Ieee Photonics Technology Letters. 20: 1769-1771. DOI: 10.1109/Lpt.2008.2004686 |
0.591 |
|
| 2008 |
Kim H, Ryou JH, Dupuis RD, Lee SN, Park Y, Jeon JW, Seong TY. Electrical characteristics of contacts to thin film N-polar n-type GaN Applied Physics Letters. 93. DOI: 10.1063/1.3013838 |
0.512 |
|
| 2008 |
Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD, Dalmau RF, Lu P, Sitar Z. Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 93. DOI: 10.1063/1.2959064 |
0.589 |
|
| 2008 |
Dixon F, Feng M, Holonyak N, Huang Y, Zhang XB, Ryou JH, Dupuis RD. Transistor laser with emission wavelength at 1544 nm Applied Physics Letters. 93. DOI: 10.1063/1.2958228 |
0.516 |
|
| 2008 |
Liu JP, Ryou JH, Dupuis RD, Han J, Shen GD, Wang HB. Barrier effect on hole transport and carrier distribution in InGaNGaN multiple quantum well visible light-emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2957667 |
0.55 |
|
| 2008 |
Huang Y, Zhang XB, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. InAlGaAsInP light-emitting transistors operating near 1.55 μm Journal of Applied Physics. 103. DOI: 10.1063/1.2939243 |
0.572 |
|
| 2008 |
Liu JP, Ryou JH, Yoo D, Zhang Y, Limb J, Horne CA, Shen SC, Dupuis RD, Hanser AD, Preble EA, Evans KR. III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge Applied Physics Letters. 92. DOI: 10.1063/1.2906372 |
0.509 |
|
| 2008 |
Liu JP, Limb JB, Ryou JH, Yoo D, Horne CA, Dupuis RD, Wu ZH, Fischer AM, Ponce FA, Hanser AD, Liu L, Preble EA, Evans KR. Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2832645 |
0.57 |
|
| 2008 |
Limb JB, Yoo D, Zhang Y, Ryou JH, Shen SC, Dupuis RD. GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation Electronics Letters. 44: 313-315. DOI: 10.1049/El:20082830 |
0.566 |
|
| 2008 |
Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes Journal of Crystal Growth. 310: 5217-5222. DOI: 10.1016/J.Jcrysgro.2008.07.107 |
0.567 |
|
| 2008 |
Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 4880-4884. DOI: 10.1016/J.Jcrysgro.2008.07.081 |
0.584 |
|
| 2008 |
Huang Y, Ryou JH, Dupuis RD. Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors Journal of Crystal Growth. 310: 4345-4350. DOI: 10.1016/J.Jcrysgro.2008.07.034 |
0.599 |
|
| 2008 |
Liu J, Ryou JH, Lochner Z, Limb J, Yoo D, Dupuis RD, Wu Z, Fischer AM, Ponce FA. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 5166-5169. DOI: 10.1016/J.Jcrysgro.2008.07.033 |
0.593 |
|
| 2008 |
Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Shen SC. GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2290-2292. DOI: 10.1002/Pssc.200778704 |
0.63 |
|
| 2008 |
Ryou JH, Liu JP, Zhang Y, Horne CA, Lee W, Shen SC, Dupuis RD. Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1849-1851. DOI: 10.1002/Pssc.200778698 |
0.526 |
|
| 2007 |
Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Britt M, Yoder PD. Performance evaluation of III-nitride avalanche photodiodes grown on SiC and GaN substrates Ecs Transactions. 11: 91-96. DOI: 10.1149/1.2783861 |
0.536 |
|
| 2007 |
Dupuis RD, Ryou JH, Yoo D, Limb JB, Zhang Y, Shen SC, Yoder D. High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates Proceedings of Spie - the International Society For Optical Engineering. 6739. DOI: 10.1117/12.738505 |
0.612 |
|
| 2007 |
Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Yoder PD, Dupuis RD. Performance of deep ultraviolet gan avalanche photodiodes grown by MOCVD Ieee Photonics Technology Letters. 19: 1744-1746. DOI: 10.1109/Lpt.2007.906052 |
0.618 |
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| 2007 |
Yoo D, Limb J, Ryou JH, Zhang Y, Shen SC, Dupuis RD, Hanser D, Preble E, Evans K. AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 19: 1313-1315. DOI: 10.1109/Lpt.2007.902376 |
0.654 |
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| 2007 |
Lee W, Limb J, Ryou JH, Yoo D, Ewing MA, Korenblit Y, Dupuis RD. Nitride-based green light-emitting diodes with various p-type layers Ieee/Osa Journal of Display Technology. 3: 126-132. DOI: 10.1109/Jdt.2007.896719 |
0.631 |
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| 2007 |
Chu-Kung BF, Wu CH, Walter G, Feng M, Holonyak N, Chung T, Ryou JH, Dupuis RD. Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2821380 |
0.533 |
|
| 2007 |
Zhang XB, Ryou JH, Dupuis RD, Xu C, Mou S, Petschke A, Hsieh KC, Chuang SL. Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2717524 |
0.519 |
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| 2007 |
Lee W, Ryou JH, Yoo D, Limb J, Dupuis RD, Hanser D, Preble E, Williams NM, Evans K. Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2535899 |
0.532 |
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| 2007 |
Limb JB, Yoo D, Ryou JH, Shen SC, Dupuis RD. Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates Electronics Letters. 43: 366-367. DOI: 10.1049/El:20070065 |
0.582 |
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| 2007 |
Limb JB, Lee W, Ryou JH, Yoo D, Dupuis RD. Comparison of GaN and In 0.04Ga 0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes Journal of Electronic Materials. 36: 426-430. DOI: 10.1007/S11664-006-0072-6 |
0.571 |
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| 2007 |
Yoo D, Limb JB, Ryou JH, Lee W, Dupuis RD. Epitaxial growth and device design optimization of full-vertical GaN p-i-n rectifiers Journal of Electronic Materials. 36: 353-358. DOI: 10.1007/S11664-006-0069-1 |
0.625 |
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| 2006 |
Wang X, Song J, Summers CJ, Ryou JH, Li P, Dupuis RD, Wang ZL. Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications. The Journal of Physical Chemistry. B. 110: 7720-4. PMID 16610866 DOI: 10.1021/Jp060346H |
0.521 |
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| 2006 |
Noh MS, Ryou JH, Dupuis RD, Chang YL, Weissman RH. Band lineup of pseudomorphic GaAs 1-xSb x quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2363237 |
0.486 |
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| 2006 |
Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619 |
0.553 |
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| 2006 |
Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Reed ML, Collins CJ, Wraback M, Hanser D, Preble E, Williams NM, Evans K. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2219390 |
0.574 |
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| 2006 |
Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Chu-Kung B, Feng M, Keogh DM, Asbeck PM. Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88. DOI: 10.1063/1.2198014 |
0.559 |
|
| 2006 |
Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704 |
0.546 |
|
| 2006 |
Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High performance GaN pin rectifiers grown on free-standing GaN substrates Electronics Letters. 42: 1313-1314. DOI: 10.1049/El:20062261 |
0.607 |
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| 2006 |
Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High current gain InGaN/GaN HBTs with 300°C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/El:20060333 |
0.5 |
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| 2006 |
Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Effect of thermal annealing induced by p-type layer growth on blue and green LED performance Journal of Crystal Growth. 287: 577-581. DOI: 10.1016/J.Jcrysgro.2005.10.079 |
0.63 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Mou S, Chuang SL, Xu C, Hsieh KC. Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications Journal of Crystal Growth. 287: 545-549. DOI: 10.1016/J.Jcrysgro.2005.10.025 |
0.544 |
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| 2006 |
Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Journal of Electronic Materials. 35: 587-591. DOI: 10.1007/S11664-006-0104-2 |
0.637 |
|
| 2005 |
Wang X, Song J, Li P, Ryou JH, Dupuis RD, Summers CJ, Wang ZL. Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates. Journal of the American Chemical Society. 127: 7920-3. PMID 15913382 DOI: 10.1021/Ja050807X |
0.549 |
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| 2005 |
Dupuis R, Chung T, Lee W, Li P, Limb J, Ryou J, Yoo D. III-N Epitaxial Growth for Nitride Devices Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff07-01-Ee05-01 |
0.596 |
|
| 2002 |
Noh MS, Ryou JH, Chang Y, Weissman R, Dupuis RD. Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M4.6 |
0.508 |
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