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Jun Xu - Publications

Affiliations: 
Tsinghua University, Beijing, China, Beijing, Beijing Shi, China 
Area:
Polymer crystallization, Biodegradable polymers
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122 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Cao Y, Wu D, Zhu P, Shan D, Zeng X, Xu J. Down-Shifting and Anti-Reflection Effect of CsPbBr Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties. Nanomaterials (Basel, Switzerland). 10. PMID 32316489 DOI: 10.3390/Nano10040775  0.319
2020 Ma H, Xu J, Chen K, Yu L. Synergetic effect in rolling GaIn alloy droplets enables ultralow temperature growth of silicon nanowires at 70 °C on plastics. Nanoscale. PMID 32267283 DOI: 10.1039/D0Nr01283A  0.313
2020 Zhang Y, Chen J, Hou G, Li D, Wu Y, Xu J, Xu L, Chen K. Low power consumption light emitting device containing TiO:Er thin film prepared by sol-gel method. Optics Express. 28: 6064-6070. PMID 32225863 DOI: 10.1364/Oe.384810  0.325
2020 Yin H, Yang H, Xu S, Pan D, Xu J, Chen K, Yu L. High Performance Si Nanowire TFTs With Ultrahigh on/off Current Ratio and Steep Subthreshold Swing Ieee Electron Device Letters. 41: 46-49. DOI: 10.1109/Led.2019.2953116  0.311
2020 Liu X, Ji Y, Lu Z, Sun Y, Yang H, Liu J, Zhang Y, Li D, Cao Y, Li W, Xu J, Chen K. Enhanced device performance of Si nanowires/Si nanocrystals heterojunction solar cells with ultrathin Al2O3 passivation Physica E-Low-Dimensional Systems & Nanostructures. 120: 114048. DOI: 10.1016/J.Physe.2020.114048  0.324
2020 Chen J, Li D, Zhang Y, Jiang Y, Xu J, Chen K. Comparative study on P and B doped nano-crystalline Si multilayers Applied Surface Science. 529: 146971. DOI: 10.1016/J.Apsusc.2020.146971  0.317
2020 Chen W, Liang R, Zhang S, Liu Y, Cheng W, Sun C, Xu J. Ultrahigh sensitive near-infrared photodetectors based on MoTe 2 /germanium heterostructure Nano Research. 13: 127-132. DOI: 10.1007/S12274-019-2583-5  0.313
2019 Zhang S, Zhang T, Cao L, Liu Z, Wang J, Xu J, Chen K, Yu L. Coupled boron-doping and geometry control of tin-catalyzed silicon nanowires for high performance radial junction photovoltaics. Optics Express. 27: 37248-37256. PMID 31878508 DOI: 10.1364/Oe.27.037248  0.322
2019 Zhao Y, Li L, Liu S, Wang J, Xu J, Shi Y, Chen K, Roca I Cabarrocas P, Yu L. Germanium quantum dot infrared photodetectors addressed by self-aligned silicon nanowire electrodes. Nanotechnology. PMID 31860876 DOI: 10.1088/1361-6528/Ab647E  0.314
2019 Zhang T, Wang J, Yu L, Xu J, Roca I Cabarrocas P. Advanced radial junction thin film photovoltaics and detectors built on standing silicon nanowires. Nanotechnology. PMID 30849766 DOI: 10.1088/1361-6528/Ab0E57  0.331
2019 Zhang X, Chen R, Wang P, Gan Z, Zhang Y, Jin H, Jian J, Xu J. Investigation of energy transfer mechanisms in rare-earth doped amorphous silica films embedded with tin oxide nanocrystals. Optics Express. 27: 2783-2791. PMID 30732310 DOI: 10.1364/Oe.27.002783  0.307
2019 Sun Y, Dong T, Wang J, Xu J, Chen K, Cabarrocas PRi, Yu L. Meandering growth of in-plane silicon nanowire springs Applied Physics Letters. 114: 233103. DOI: 10.1063/1.5097429  0.305
2019 Liu X, Shan D, Ji Y, Li D, Li W, Xu J, Chen K. Improved device performance of Si-based heterojunction solar cells by using phosphorus doped Si nanocrystals embedded in SiC host matrix Aip Advances. 9: 025213. DOI: 10.1063/1.5088022  0.338
2019 Zhang X, Wang P, Qi D, Huang Y, Zheng B, Lin T, Chen P, Yu Z, Xu J. Enhanced and wavelength-tunable near-infrared luminescence from bismuth-doped silica thin films with Au nanocrystals Journal of Alloys and Compounds. 772: 332-336. DOI: 10.1016/J.Jallcom.2018.09.086  0.323
2019 Gao X, He P, Ren J, Xu J. Modeling of contact stress among compound particles in high energy lithium-ion battery Energy Storage Materials. 18: 23-33. DOI: 10.1016/J.Ensm.2019.02.007  0.309
2019 Liu Y, Huang W, Chen W, Wang X, Guo J, Tian H, Zhang H, Wang Y, Yu B, Ren T, Xu J. Plasmon resonance enhanced WS2 photodetector with ultra-high sensitivity and stability Applied Surface Science. 481: 1127-1132. DOI: 10.1016/J.Apsusc.2019.03.179  0.31
2018 Zhao Y, Ma H, Dong T, Wang J, Yu L, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains. Nano Letters. PMID 30346786 DOI: 10.1021/Acs.Nanolett.8B02847  0.312
2018 Tong G, Li H, Zhu Z, Zhang Y, Yu L, Xu J, Jiang Y. Enhancing Hybrid Perovskite Detectability in Deep Ultraviolet Region with Down-conversion Dual-phase (CsPbBr3-Cs4PbBr6) Films. The Journal of Physical Chemistry Letters. PMID 29533622 DOI: 10.1021/Acs.Jpclett.8B00429  0.311
2018 Shan D, Wang H, Tang M, Xu J. Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films Journal of Nanomaterials. 2018: 1-6. DOI: 10.1155/2018/2685210  0.303
2018 Lu P, Li D, Cao Y, Xu J, Chen K. Si nanocrystals-based multilayers for luminescent and photovoltaic device applications Journal of Semiconductors. 39: 61007. DOI: 10.1088/1674-4926/39/6/061007  0.308
2018 Xu J, Ji Y, Lu P, Bai G, Ren Q, Xu J. Microscopic observation of lateral and vertical charge transportation in Si nanocrystals sandwiched by amorphous SiC layers Aip Advances. 8: 015224. DOI: 10.1063/1.5020239  0.302
2018 Song H, Wang S, Song X, Yang H, Du G, Yu L, Xu J, He P, Zhou H, Chen K. A bottom-up synthetic hierarchical buffer structure of copper silicon nanowire hybrids as ultra-stable and high-rate lithium-ion battery anodes Journal of Materials Chemistry. 6: 7877-7886. DOI: 10.1039/C8Ta01694A  0.317
2018 Wu X, Li P, Liang R, Xiao L, Xu J, Wang J. Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon Superlattices and Microstructures. 117: 293-297. DOI: 10.1016/J.Spmi.2018.03.057  0.302
2018 Chen W, Liang R, Wang J, Zhang S, Xu J. Enhanced photoresponsivity and hole mobility of MoTe2 phototransistors by using an Al2O3 high-κ gate dielectric Chinese Science Bulletin. 63: 997-1005. DOI: 10.1016/J.Scib.2018.06.009  0.317
2018 Sun X, Zhang T, Wang J, Yang F, Xu L, Xu J, Shi Y, Chen K, Cabarrocas PRi, Yu L. Firmly standing three-dimensional radial junctions on soft aluminum foils enable extremely low cost flexible thin film solar cells with very high power-to-weight performance Nano Energy. 53: 83-90. DOI: 10.1016/J.Nanoen.2018.08.038  0.326
2018 Jiang Y, Li D, Xu J, Li W, Chen K. Size-dependent phosphorus doping effect in nanocrystalline-Si-based multilayers Applied Surface Science. 461: 66-71. DOI: 10.1016/J.Apsusc.2018.03.055  0.327
2017 Ji Y, Zhai Y, Yang H, Liu J, Shao W, Xu J, Li W, Chen K. Improved device performances based on Si quantum dot/Si nanowire hetero-structures by inserting an Al2O3 thin layer. Nanoscale. PMID 29027563 DOI: 10.1039/C7Nr05694J  0.31
2017 Li D, Jiang Y, Liu J, Zhang P, Xu J, Li W, Chen K. Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-small Si Nanocrystals. Nanotechnology. PMID 28791966 DOI: 10.1088/1361-6528/Aa852E  0.317
2017 Xu M, Wang J, Xue Z, Wang J, Feng P, Yu L, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. High performance transparent in-plane silicon nanowire Fin-TFTs via a robust nano-droplet-scanning crystallization dynamics. Nanoscale. PMID 28702558 DOI: 10.1039/C7Nr02825C  0.342
2017 Lu J, Sheng X, Tong G, Yu Z, Sun X, Yu L, Xu X, Wang J, Xu J, Shi Y, Chen K. Ultrafast Solar-Blind Ultraviolet Detection by Inorganic Perovskite CsPbX3 Quantum Dots Radial Junction Architecture. Advanced Materials (Deerfield Beach, Fla.). PMID 28370588 DOI: 10.1002/Adma.201700400  0.311
2017 Zhang S, Liang R, Wang J, Tan Z, Xu J. Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction Chinese Physics B. 26: 18504. DOI: 10.1088/1674-1056/26/1/018504  0.32
2017 Lin Z, Chen K, Zhang P, Xu J, Li W, Yang H, Huang X. Improved power efficiency in phosphorus doped n-a-SiNxOy/p-Si heterojunction light emitting diode Applied Physics Letters. 110: 81109. DOI: 10.1063/1.4977419  0.337
2017 Liu L, Liang R, Wang J, Xu J. Ultra-high aspect ratio poly-Si FinFET using an improved spacer formation technique Superlattices and Microstructures. 104: 149-155. DOI: 10.1016/J.Spmi.2017.02.021  0.327
2017 Shan D, Ji Y, Li D, Xu J, Qian M, Xu L, Chen K. Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping Applied Surface Science. 425: 492-496. DOI: 10.1016/J.Apsusc.2017.07.011  0.316
2016 Shan D, Qian M, Ji Y, Jiang X, Xu J, Chen K. The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities. Nanomaterials (Basel, Switzerland). 6. PMID 28335362 DOI: 10.3390/Nano6120233  0.317
2016 Xu M, Xue Z, Wang J, Zhao Y, Duan Y, Zhu G, Yu L, Xu J, Wang J, Shi Y, Chen K, Roca I Cabarrocas P. Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires. Nano Letters. 16: 7317-7324. PMID 27960468 DOI: 10.1021/Acs.Nanolett.6B02004  0.322
2016 Xue Z, Xu M, Zhao Y, Wang J, Jiang X, Yu L, Wang J, Xu J, Shi Y, Chen K, Roca I Cabarrocas P. Engineering island-chain silicon nanowires via a droplet mediated Plateau-Rayleigh transformation. Nature Communications. 7: 12836. PMID 27682161 DOI: 10.1038/Ncomms12836  0.315
2016 Qian M, Shan D, Ji Y, Li D, Xu J, Li W, Chen K. Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers. Nanoscale Research Letters. 11: 346. PMID 27460594 DOI: 10.1186/S11671-016-1561-Z  0.334
2016 Shao W, Lu P, Li W, Xu J, Xu L, Chen K. Simulation and Experimental Study on Anti-reflection Characteristics of Nano-patterned Si Structures for Si Quantum Dot-Based Light-Emitting Devices. Nanoscale Research Letters. 11: 317. PMID 27356564 DOI: 10.1186/S11671-016-1530-6  0.322
2016 Lu P, Mu W, Xu J, Zhang X, Zhang W, Li W, Xu L, Chen K. Phosphorus Doping in Si Nanocrystals/SiO2 msultilayers and Light Emission with Wavelength compatible for Optical Telecommunication. Scientific Reports. 6: 22888. PMID 26956425 DOI: 10.1038/Srep22888  0.323
2016 Lin S, Zhang X, Zhang P, Tan D, Xu J, Li W, Chen K. High-efficiency near-infrared emission from Bismuth-doped SiO0.73 thin films fabricated by ion implantation technology. Optics Letters. 41: 630-3. PMID 26907441 DOI: 10.1364/Ol.41.000630  0.331
2016 Liu L, Liang R, Shan B, Xu J, Wang J. Technology demonstration of a novel poly-Si nanowire thin film transistor Chinese Physics B. 25: 118504. DOI: 10.1088/1674-1056/25/11/118504  0.327
2016 Ji Y, Shan D, Qian M, Xu J, Li W, Chen K. Formation of high conductive nano-crystalline silicon embedded in amorphous silicon-carbide films with large optical band gap Aip Advances. 6: 105107. DOI: 10.1063/1.4965922  0.338
2016 Wang Z, Xiao L, Liang R, Shen S, Xu J, Wang J. Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application Aip Advances. 6. DOI: 10.1063/1.4954880  0.327
2016 Zhang P, Chen K, Lin Z, Tan D, Dong H, Li W, Xu J, Huang X. Dynamics of high quantum efficiency photoluminescence from N-Si-O bonding states in oxygenated amorphous silicon nitride films Applied Physics Letters. 108. DOI: 10.1063/1.4944056  0.31
2016 Ma Z, Wang W, Yang H, Jiang X, Yu J, Qin H, Xu L, Chen K, Huang X, Li W, Xu J, Feng D. Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition Journal of Applied Physics. 119. DOI: 10.1063/1.4942160  0.304
2016 Shan D, Ji Y, Xu J, Lu P, Jiang X, Chen K. Microstructure and carrier-transport behaviors of nanocrystalline silicon thin films annealed at various temperatures Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532864  0.306
2016 Cao Y, Ge Z, Jiang X, Xu J, Xu L, Li W, Yu L, Chen K. Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells Particle & Particle Systems Characterization. 33: 38-43. DOI: 10.1002/Ppsc.201500192  0.322
2016 Xue Z, Xu M, Li X, Wang J, Jiang X, Wei X, Yu L, Chen Q, Wang J, Xu J, Shi Y, Chen K, Cabarrocas PRi. In‐Plane Self‐Turning and Twin Dynamics Renders Large Stretchability to Mono‐Like Zigzag Silicon Nanowire Springs Advanced Functional Materials. 26: 5352-5359. DOI: 10.1002/Adfm.201600780  0.306
2015 Wang H, Song H, Lin Z, Jiang X, Zhang X, Yu L, Xu J, Pan L, Wang J, Zheng M, Shi Y, Chen K. Highly cross-linked Cu/a-Si core-shell nanowires for ultra-long cycle life and high rate lithium batteries. Nanoscale. PMID 26572901 DOI: 10.1039/C5Nr06985H  0.311
2015 Jiang X, Ma Z, Xu J, Chen K, Xu L, Li W, Huang X, Feng D. a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths. Scientific Reports. 5: 15762. PMID 26508086 DOI: 10.1038/Srep15762  0.303
2015 Lu J, Qian S, Yu Z, Misra S, Yu L, Xu J, Shi Y, Roca I Cabarrocas P, Chen K. How tilting and cavity-mode-resonant absorption contribute to light harvesting in 3D radial junction solar cells. Optics Express. 23: A1288-96. PMID 26406758 DOI: 10.1364/Oe.23.0A1288  0.302
2015 Yu Z, Qian S, Yu L, Misra S, Zhang P, Wang J, Shi Y, Xu L, Xu J, Chen K, Roca i Cabarrocas P. Boosting light emission from Si-based thin film over Si and SiO(2) nanowires architecture. Optics Express. 23: 5388-96. PMID 25836773 DOI: 10.1364/Oe.23.005388  0.332
2015 Zhang X, Lin S, Lin T, Zhang P, Xu J, Xu L, Chen K. Improved sensitization efficiency in Er(3+) ions and SnO2 nanocrystals co-doped silica thin films. Physical Chemistry Chemical Physics : Pccp. 17: 11974-80. PMID 25779974 DOI: 10.1039/C5Cp00246J  0.312
2015 Xu M, Xue Z, Yu L, Qian S, Fan Z, Wang J, Xu J, Shi Y, Chen K, Roca i Cabarrocas P. Operating principles of in-plane silicon nanowires at simple step-edges. Nanoscale. 7: 5197-202. PMID 25700247 DOI: 10.1039/C4Nr06531J  0.301
2015 Sun C, Liang R, Wang J, Xu J. Preparation of Ultrathin Germanium on Insulator Films Using a Wet Etching Process Ecs Solid State Letters. 4: 43. DOI: 10.1149/2.0021506Ssl  0.31
2015 Tan D, Zhang P, Xu J, Cao Y, Lu P, Li W, Chen K. Electronic properties and charge storage effect of amorphous SiN passivated nanocrystalline silicon Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4923228  0.332
2015 Sun C, Liang R, Liu L, Wang J, Xu J. Leakage current of germanium-on-insulator-based junctionless nanowire transistors Applied Physics Letters. 107. DOI: 10.1063/1.4932172  0.3
2015 Qian S, Misra S, Lu J, Yu Z, Yu L, Xu J, Wang J, Xu L, Shi Y, Chen K, Roca i Cabarrocas P. Full potential of radial junction Si thin film solar cells with advanced junction materials and design Applied Physics Letters. 107. DOI: 10.1063/1.4926991  0.331
2015 Zhang P, Chen K, Lin Z, Dong H, Li W, Xu J, Huang X. The role of N-Si-O bonding configurations in tunable photoluminescence of oxygenated amorphous silicon nitride films Applied Physics Letters. 106: 231103. DOI: 10.1063/1.4922465  0.319
2015 Cao Y, Xu J, Ge Z, Zhai Y, Li W, Jiang X, Chen K. Enhanced broadband spectral response and energy conversion efficiency for hetero-junction solar cells with graded-sized Si quantum dots/SiC multilayers Journal of Materials Chemistry C. 3: 12061-12067. DOI: 10.1039/C5Tc02585K  0.315
2015 Lu P, Xu J, Cao Y, Lai J, Xu L, Chen K. Preparation of nano-patterned Si structures for hetero-junction solar cells Applied Surface Science. 334: 123-128. DOI: 10.1016/J.Apsusc.2014.08.129  0.33
2015 Liu Z, Xu L, Zhang W, Ge Z, Xu J, Su W, Yu Y, Ma Z, Chen K. Extended short-wavelength spectral response of organic/(silver nanoparticles/Si nanoholes nanocomposite films) hybrid solar cells due to localized surface plasmon resonance Applied Surface Science. 334: 110-114. DOI: 10.1016/J.Apsusc.2014.08.077  0.314
2014 Yu L, Xu M, Xu J, Xue Z, Fan Z, Picardi G, Fortuna F, Wang J, Xu J, Shi Y, Chen K, Roca i Cabarrocas P. In-plane epitaxial growth of silicon nanowires and junction formation on Si(100) substrates. Nano Letters. 14: 6469-74. PMID 25343717 DOI: 10.1021/Nl503001G  0.308
2014 Zhao M, Liu L, Liang R, Wang J, Xu J. Novel Sn-assisted nitridation of Ge/HfO2interface and improved electrical properties of the MOS capacitor Japanese Journal of Applied Physics. 53: 041301. DOI: 10.7567/Jjap.53.041301  0.309
2014 Zhang P, Tan D, Zhang X, Xu J, Li W, Zhang P, Chen K. Observation of “fast” and “slow” decay processes in oxygen-doped hydrogenated amorphous silicon nitride thin films Optical Materials Express. 5: 22. DOI: 10.1364/Ome.5.000022  0.333
2014 Liu L, Liang R, Wang J, Xu J. Hole Mobility Enhancement of GeSn/Ge pMOSFETs with an Interlayer Formed by Sn-Assisted Oxynitridation Ecs Solid State Letters. 3: Q76-Q78. DOI: 10.1149/2.0071411Ssl  0.302
2014 Wang Y, Chen K, Qian X, Fang Z, Li W, Xu J. The role of biasing electric field in intrinsic resistive switching characteristics of highly silicon-rich a-SiOx films1 Canadian Journal of Physics. 92: 589-592. DOI: 10.1139/Cjp-2013-0569  0.314
2014 Jiang X, Ma Z, Yang H, Yu J, Wang W, Zhang W, Li W, Xu J, Xu L, Chen K, Huang X, Feng D. Nanocrystalline Si pathway induced unipolar resistive switching behavior from annealed Si-rich SiNx/SiNy multilayers Journal of Applied Physics. 116: 123705. DOI: 10.1063/1.4896552  0.304
2014 Zhang P, Zhang X, Lu P, Xu J, Xu X, Li W, Chen K. Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers Applied Surface Science. 292: 262-266. DOI: 10.1016/J.Apsusc.2013.11.128  0.305
2014 Zhang X, Zhang P, Lin S, Xu J, Lin T, Xu L, Chen K. Energy transfer process between Eu3+ and wide-band-gap SnO2 nanocrystals in silica films studied by photoluminescence excitation and time-resolved photoluminescence techniques Chinese Science Bulletin. 59: 1285-1290. DOI: 10.1007/S11434-014-0168-Y  0.308
2013 Chen J, Yang F, Xu L, Tong L, Xu J, Su WN, Yu Y, Ma ZY. Phase Transition of GeSbTe Thin Films Induced by Thermal Treatment and Laser Irradiation Advanced Materials Research. 1048-1051. DOI: 10.4028/Www.Scientific.Net/Amr.750-752.1048  0.314
2013 Jiang YF, Xu L, Chen J, Zhang R, Su WN, Yu Y, Ma ZY, Xu J. Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films Advanced Materials Research. 1044-1047. DOI: 10.4028/Www.Scientific.Net/Amr.750-752.1044  0.312
2013 Song C, Li C, Xu J, Huang R, Wang X, Song J, Guo YQ. Improvement of the electrical properties of nanocrystalline silicon films by the KrF pulsed excimer laser irradiation method Laser Physics. 23. DOI: 10.1088/1054-660X/23/7/076002  0.324
2013 Li C, Xu J, Xu L, Li W, Jiang X, Sun S, Chen K. Optical absorption and charging effect in nano-crystalline Ge/SiNx multilayers Applied Surface Science. 269: 129-133. DOI: 10.1016/J.Apsusc.2012.10.181  0.309
2013 Sun S, Lu P, Xu J, Xu L, Chen K, Wang Q, Zuo Y. Fabrication of Anti-reflecting Si Nano-structures with Low Aspect Ratio by Nano-sphere Lithography Technique Nano-Micro Letters. 5: 18-25. DOI: 10.1007/Bf03353727  0.335
2013 Li R, Jiang Y, Xu L, Ma Z, Yang F, Xu J, Su W. Enhanced threshold voltage of Zn-doped Ge2Sb2Te5phase-change memory deposited by electron-beam evaporation Physica Status Solidi (a). 210: 2650-2655. DOI: 10.1002/Pssa.201329381  0.306
2013 Jiang Y, Xu L, Chen J, Zhang R, Su W, Yu Y, Ma Z, Xu J. Silicon doping effect on the crystallization behavior of Ge2Sb2Te5film Physica Status Solidi (a). 210: 2231-2237. DOI: 10.1002/Pssa.201228840  0.328
2012 Li C, Xu J, Li W, Sun S, Jiang X, Chen K. Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 51201. DOI: 10.1116/1.4739432  0.327
2012 Chen G, Xu J, Xu W, Sun H, Mu W, Sun S, Ma Z, Huang X, Chen K. Dynamical process of KrF pulsed excimer laser crystallization of ultrathin amorphous silicon films to form Si nano-dots Journal of Applied Physics. 111: 94320. DOI: 10.1063/1.4716467  0.322
2012 Liu W, XU L, Liu N, Liao Y, Liu D, Xu J, Ma Z, Chen K. Electron beam evaporation deposition and properties of Abrupt GST/Si heterojunction structure Vacuum. 86: 804-807. DOI: 10.1016/J.Vacuum.2010.12.015  0.322
2012 Xia G, Ma Z, Jiang X, Yang H, Xu J, Xu L, Li W, Chen K, Feng D. Direct observation of resistive switching memories behavior from nc-Si embedded in SiO2 at room temperature Journal of Non-Crystalline Solids. 358: 2348-2352. DOI: 10.1016/J.Jnoncrysol.2012.01.065  0.303
2012 Xu J, Mu W, Xia Z, Sun H, Wei D, Li W, Ma Z, Chen K. Enhanced luminescence from Si quantum dots/SiO2 multilayers by hydrogen annealing Journal of Non-Crystalline Solids. 358: 2141-2144. DOI: 10.1016/J.Jnoncrysol.2011.12.009  0.307
2012 Tong L, Xu L, Jiang Y, Yang F, Geng L, Xu J, Su W, Ma Z, Chen K. Improved phase-change characteristics of Si doped GeSbTe thin films used for phase change memory Journal of Non-Crystalline Solids. 358: 2402-2404. DOI: 10.1016/J.Jnoncrysol.2011.11.022  0.336
2011 Liu Y, Xu J, Sun H, Sun S, Xu W, Xu L, Chen K. Depth-dependent anti-reflection and enhancement of luminescence from Si quantum dots-based multilayer on nano-patterned Si substrates. Optics Express. 19: 3347-3352. PMID 21369157 DOI: 10.1364/Oe.19.003347  0.306
2011 Xu L, Tong L, Geng L, Yang F, Xu J, Su W, Liu D, Ma Z, Chen K. A comparative study on electrical transport properties of thin films of Ge1Sb2Te4 and Ge2Sb2Te5 phase-change materials Journal of Applied Physics. 110: 013703. DOI: 10.1063/1.3603016  0.306
2011 Lin T, Ding X, Xu J, Wan N, Xu L, Chen K. Influences of doping and annealing conditions on the photoluminescence from In2O3 nanocrystals and Eu3+ ions co-doped sol-gel SiO2 films Journal of Applied Physics. 109: 083512. DOI: 10.1063/1.3569889  0.316
2011 Song C, Xu J, Wang Q, Zha G, Li W, Chen K. Carrier transport of doped nanocrystalline Si formed by annealing of amorphous Si films at various temperatures Solid State Communications. 151: 697-700. DOI: 10.1016/J.Ssc.2011.02.018  0.315
2011 Xiao J, Xu L, Geng L, Tong L, Yang F, Xu J, Su W, Liu D, Yu Y, Ma Z, Chen K. Fabrication of highly ordered CuInSe2 films with hollow nanocones for anti-reflection Applied Surface Science. 257: 10893-10897. DOI: 10.1016/J.Apsusc.2011.07.134  0.316
2010 Chen D, Liu Y, Xu J, Wei D, Sun H, Xu L, Wang T, Li W, Chen K. Improved emission efficiency of electroluminescent device containing nc-Si/SiO 2 multilayers by using nano-patterned substrate Optics Express. 18: 917-922. PMID 20173913 DOI: 10.1364/Oe.18.000917  0.315
2010 Wang D, Dong H, Chen K, Huang R, Xu J, Li W, Ma Z. Low turn-on and high efficient oxidized amorphous silicon nitride light-emitting devices induced by high density amorphous silicon nanoparticles Thin Solid Films. 518: 3938-3941. DOI: 10.1016/J.Tsf.2009.12.113  0.314
2010 Yang Y, Xu L, Yang F, Liu W, Xu J, Ma Z, Chen K. Enhanced visible photoluminescence from nc-Si/SiOx films deposited by electron beam evaporation Journal of Non-Crystalline Solids. 356: 2790-2793. DOI: 10.1016/J.Jnoncrysol.2010.09.038  0.321
2010 Xu J, Chen G, Song C, Chen K, Huang X, Ma Z. Formation and properties of high density Si nanodots Applied Surface Science. 256: 5691-5694. DOI: 10.1016/J.Apsusc.2010.03.016  0.338
2010 Wan N, Xu J, Chen G, Gan X, Guo S, Xu L, Chen K. Broadband anti-reflection and enhanced field emission from catalyst-free grown small-sized ITO nanowires at a low temperature Acta Materialia. 58: 3068-3072. DOI: 10.1016/J.Actamat.2010.01.041  0.314
2010 Dong H, Chen K, Wang D, Li W, Ma Z, Xu J, Huang X. A new luminescent defect state in low temperature grown amorphous SiNxOy thin films Physica Status Solidi (C). 7: 828-831. DOI: 10.1002/Pssc.200982770  0.328
2009 Xu L, Li W, Xu J, Zhou J, Wu L, Zhang X, Ma Z, Chen K. Morphology control and electron field emission properties of high-ordered Si nanoarrays fabricated by modified nanosphere lithography Applied Surface Science. 255: 5414-5417. DOI: 10.1016/J.Apsusc.2008.07.162  0.301
2008 Xu J, Zhou J, Yao Y, Cen Z, Song F, Xu L, Wan J, Chen K. Enhanced electron field emission from dense Si nano-dots prepared by laser crystallization of ultrathin amorphous Si films Solid State Communications. 145: 443-446. DOI: 10.1016/J.Ssc.2007.12.019  0.322
2006 Huang R, Chen K, Qian B, Chen S, Li W, Xu J, Ma Z, Huang X. Oxygen induced strong green light emission from low-temperature grown amorphous silicon nitride films Applied Physics Letters. 89: 221120. DOI: 10.1063/1.2399393  0.305
2006 Cen Z, Xu J, Liu Y, Li W, Xu L, Ma Z, Huang X, Chen K. Visible light emission from single layer Si nanodots fabricated by laser irradiation method Applied Physics Letters. 89: 163107. DOI: 10.1063/1.2362577  0.333
2005 Xu J, Li X, Cen Z, Li W, Xu L, Ma Z, Rui Y, Huang X, Chen K. Formation of a dense nanocrystalline Si array on an insulating layer by laser irradiation of ultrathin amorphous Si films Scripta Materialia. 53: 811-815. DOI: 10.1016/J.Scriptamat.2005.06.012  0.325
2004 Ma Z, Chen K, Huang X, Xu J, Li W, Sui Y, Zhu D, Mei J, Feng D. The evolution investigation of photoluminescence from a-Si:H/SiO2 to nc-Si/SiO2 multilayers Journal of Applied Physics. 95: 2448-2451. DOI: 10.1063/1.1646443  0.301
2004 Mei J, Rui Y, Ma Z, Xu J, Zhu D, Yang L, Li X, Li W, Huang X, Chen K. Contribution of multiple emitting centers to luminescence from Si/SiO2 multilayers with step by step thermal annealing Solid State Communications. 131: 701-705. DOI: 10.1016/J.Ssc.2004.06.031  0.315
2004 Chen K, Ma Z, Huang X, Xu J, Li W, Sui Y, Mei J, Zhu D. Comparison between light emission from Si/SiNX and Si/SiO2 multilayers: role of interface states Journal of Non-Crystalline Solids. 338: 448-451. DOI: 10.1016/J.Jnoncrysol.2004.03.016  0.305
2004 Wu L, Dai M, Huang X, Zhang Y, Li W, Xu J, Chen K. Room temperature electron tunneling and storage in a nanocrystalline silicon floating gate structure Journal of Non-Crystalline Solids. 338: 318-321. DOI: 10.1016/J.Jnoncrysol.2004.02.064  0.324
2003 Huang X, Ma T, Xu J, Li Z, Mei J, Li X, Li W, Huang X, Chen K. Visible electroluminescence from amorphous hydrogenated silicon carbide prepared by using organic carbon source Diamond and Related Materials. 12: 1932-1935. DOI: 10.1016/S0925-9635(03)00281-4  0.307
2003 Wu L, Huang X, Shi J, Dai M, Qiao F, Li W, Xu J, Chen K. Capacitance–voltage study of SiO2/nanocrystalline silicon/SiO2 double-barrier structures Thin Solid Films. 425: 221-224. DOI: 10.1016/S0040-6090(02)01307-X  0.333
2002 XU J, MA T, HUANG X, WANG L, LI W, CHEN K. FULL-COLOR PHOTO- AND ELECTRO-LUMINESCENCE FROM HYDROGENATED AMORPHOUS SILICON CARBIDE FILMS PREPARED BY USING ORGANIC SOURCE International Journal of Modern Physics B. 16: 1057-1061. DOI: 10.1142/S0217979202010853  0.32
2002 Ma Z, Wang L, Chen K, Li W, Zhang L, Bao Y, Wang X, Xu J, Huang X, Feng D. Blue light emission in nc-Si/SiO2 multilayers fabricated using layer by layer plasma oxidation Journal of Non-Crystalline Solids. 299302: 648-652. DOI: 10.1016/S0022-3093(01)01208-X  0.316
2001 Wang L, Wang X, Huang X, Li Z, Ma Z, Zhang L, Bao Y, Shi J, Li W, Huang X, Xu J, Chen K. Interface confinement and local structure in nc-Si/a-SiNx multilayers (nc≡nanocrystalline, a≡amorphous) Journal of Physics: Condensed Matter. 13: 9857-9865. DOI: 10.1088/0953-8984/13/44/303  0.301
2001 Wang Z, Li J, Huang X, Wang L, Xu J, Chen K. Patterned structures of silicon nanocrystals prepared by laser annealing Solid State Communications. 117: 383-386. DOI: 10.1016/S0038-1098(00)00463-4  0.308
2001 Wang L, Ma Z, Huang X, Li Z, Li J, Bao Y, Xu J, Li W, Chen K. The room-temperature visible photoluminescence from nanocrystalline Si in Si/SiNx superlattices Solid State Communications. 117: 239-244. DOI: 10.1016/S0038-1098(00)00455-5  0.315
2000 Wang L, Huang X, Li J, Xu J, Yin X, Li Q, Li W, Zhu J, Wang M, Liu Z, Chen K, Fung YM, Xu JB. AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiNx:H Multilayers Mrs Proceedings. 609. DOI: 10.1557/Proc-609-A25.1  0.31
2000 Ma T, Xu J, Du J, Li W, Huang X, Chen K. Full color light emission from amorphous SiCx:H with organic–inorganic structures Journal of Applied Physics. 88: 6408-6412. DOI: 10.1063/1.1323524  0.3
2000 Huang X, Wang L, Li J, Li W, Jiang M, Xu J, Chen K. Three-dimensional ordered nano-crystalline Si made by pulsed laser interference crystallization of a-Si:H/a-SiNx:H multilayers Journal of Non-Crystalline Solids. 266: 1015-1020. DOI: 10.1016/S0022-3093(00)00040-5  0.304
1998 Wang M, Huang X, Li W, Xu J, Chen K, Wang Q. Visible electroluminescence from pulsed-laser-annealed a-Si:H/a-SiNx:H superlattices on silicon wafer High-Power Lasers and Applications. 3278: 340-345. DOI: 10.1117/12.298218  0.319
1998 Wang M, Huang X, Li W, Xu J, Chen K. Stable Electroluminescence and Its Mechanism in Laser Crystallized a-Si:H/a-SiNx:H Superlattices Physica Status Solidi (a). 167: 125-130. DOI: 10.1002/(Sici)1521-396X(199805)167:1<125::Aid-Pssa125>3.0.Co;2-3  0.317
1997 Gu X, Qin H, Lu H, Xu J, Chen K. Observation of Coulomb Blockade Effect in Silicon Nanocrystallites at room Temperature Mrs Proceedings. 467. DOI: 10.1557/Proc-467-367  0.334
1996 Huang X, Wu W, Shen H, Li W, Chen X, Xu J, Chen K. Microstructures of Luminescent nc-Si by Excimer Laser Annealing of a-Si:H Mrs Proceedings. 452: 803. DOI: 10.1557/Proc-452-803  0.32
1996 Xu J, Chen K, Ma T, Du JF, Huang X, Li W, Feng D. Blue light emission from hydrogenated amorphous silicon carbide produced by organic source Proceedings of Spie. 2886: 96-101. DOI: 10.1117/12.251894  0.301
1996 Chen K, Wu W, Huang X, Li Z, Wang M, Xu J, Li W, Feng D. Visible photo- and electro-luminescence from laser-crystallized a-Si:H and its based multilayers Proceedings of Spie. 2886: 233-240. DOI: 10.1117/12.251893  0.331
1996 Chen K, Wang M, Shi W, Jiang L, Li W, Xu J, Huang X. Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures Journal of Non-Crystalline Solids. 198200: 833-836. DOI: 10.1016/0022-3093(96)00058-0  0.319
1993 Chen K, Xu J, Huang X, Feng D, Zhuang D, Li Q, Wang W, Qiu P. Room temperature optical bistability in hydrogenated amorphous silicon-carbon alloys Solid State Communications. 88: 579-581. DOI: 10.1016/0038-1098(93)90054-Q  0.302
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