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Albert F Rigosi - Publications

Affiliations: 
Columbia University, New York, NY 
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51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Saha D, Waters D, Yeh CC, Mhatre SM, Tran NTM, Hill HM, Watanabe K, Taniguchi T, Newell DB, Yankowitz M, Rigosi AF. Graphene-Based Analog of Single-Slit Electron Diffraction. Physical Review. B. 108. PMID 37841515 DOI: 10.1103/physrevb.108.125420  0.595
2023 Lin YC, Torsi R, Younas R, Hinkle CL, Rigosi AF, Hill HM, Zhang K, Huang S, Shuck CE, Chen C, Lin YH, Maldonado-Lopez D, Mendoza-Cortes JL, Ferrier J, Kar S, et al. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. Acs Nano. PMID 37219929 DOI: 10.1021/acsnano.2c12759  0.548
2023 Rathore S, Patel DK, Thakur MK, Haider G, Kalbac M, Kruskopf M, Liu CI, Rigosi AF, Elmquist RE, Liang CT, Hong PD. Highly sensitive broadband binary photoresponse in gateless epitaxial graphene on 4H-SiC. Carbon. 184. PMID 37200678 DOI: 10.1016/j.carbon.2021.07.098  0.325
2023 Hu IF, Panna AR, Rigosi AF, Kruskopf M, Patel DK, Liu CI, Saha D, Payagala SU, Newell DB, Jarrett DG, Liang CT, Elmquist RE. Onsager-Casimir frustration from resistance anisotropy in graphene quantum Hall devices. Physical Review. B. 104. PMID 36875776 DOI: 10.1103/physrevb.104.085418  0.308
2022 Chowdhury S, Rigosi AF, Hill HM, Vora P, Hight Walker AR, Tavazza F. Computational Methods for Charge Density Waves in 2D Materials. Nanomaterials (Basel, Switzerland). 12. PMID 35159849 DOI: 10.3390/nano12030504  0.576
2021 Chowdhury S, Hill HM, Rigosi AF, Briggs A, Berger H, Newell DB, Walker ARH, Tavazza F. Examining Experimental Raman Mode Behavior in Mono- and Bilayer 2H-TaSe via Density Functional Theory: Implications for Quantum Information Science. Acs Applied Nano Materials. 4. PMID 34250452 DOI: 10.1021/acsanm.0c03222  0.554
2020 Payagala SU, Rigosi AF, Panna AR, Pollarolo A, Kruskopf M, Schlamminger S, Jarrett DG, Brown R, Elmquist RE, Brown D, Newell DB. Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe. Ieee Transactions On Instrumentation and Measurement. 69: 9374-9380. PMID 33335334 DOI: 10.1109/Tim.2020.3004678  0.415
2020 Rigosi AF, Marzano M, Levy A, Hill HM, Patel DK, Kruskopf M, Jin H, Elmquist RE, Newell DB. Analytical determination of atypical quantized resistances in graphene junctions. Physica. B, Condensed Matter. 582. PMID 32863578 DOI: 10.1016/J.Physb.2019.411971  0.641
2020 Liu CI, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino junction devices. Journal of Physics D: Applied Physics. 53. PMID 32831402 DOI: 10.1088/1361-6463/Ab83Bb  0.626
2020 Marzano M, Kruskopf M, Panna AR, Rigosi AF, Patel DK, Jin H, Cular S, Callegaro L, Elmquist RE, Ortolano M. Implementation of a graphene quantum Hall Kelvin bridge-on-a-chip for resistance calibrations. Metrologia. 57. PMID 32127725 DOI: 10.1088/1681-7575/Ab581E  0.34
2020 Patel DK, Marzano M, Liu C, Kruskopf M, Elmquist RE, Liang C, Rigosi AF. Development of gateless quantum Hall checkerboard p–n junction devices Journal of Physics D: Applied Physics. 53: 345302. DOI: 10.1088/1361-6463/Ab8D6F  0.375
2020 Liu C, Scaletta DS, Patel DK, Kruskopf M, Levy A, Hill HM, Rigosi AF. Analysing quantized resistance behaviour in graphene Corbino p-n junction devices Journal of Physics D: Applied Physics. 53: 275301. DOI: 10.1088/1361-6463/ab83bb  0.571
2020 Patel D, Marzano M, Liu C, Hill HM, Kruskopf M, Jin H, Hu J, Newell DB, Liang C, Elmquist R, Rigosi AF. Accessing ratios of quantized resistances in graphene p–n junction devices using multiple terminals Aip Advances. 10: 025112. DOI: 10.1063/1.5138901  0.609
2020 Liu C, Patel DK, Marzano M, Kruskopf M, Hill HM, Rigosi AF. Quantum Hall resistance dartboards using graphene p-n junction devices with Corbino geometries Aip Advances. 10: 035205. DOI: 10.1063/1.5136315  0.623
2020 Rigosi AF, Marzano M, Levy A, Hill HM, Patel DK, Kruskopf M, Jin H, Elmquist RE, Newell DB. Analytical determination of atypical quantized resistances in graphene p-n junctions Physica B: Condensed Matter. 582: 411971. DOI: 10.1016/j.physb.2019.411971  0.556
2019 Rigosi AF, Hill HM, Krylyuk S, Nguyen NV, Hight Walker AR, Davydov AV, Newell DB. Dielectric Properties of NbWSe Alloys. Journal of Research of the National Institute of Standards and Technology. 124: 1-10. PMID 34877178 DOI: 10.6028/jres.124.035  0.542
2019 Rigosi AF, Patel D, Marzano M, Kruskopf M, Hill HM, Jin H, Hu J, Walker ARH, Ortolano M, Callegaro L, Liang CT, Newell DB. Atypical Quantized Resistances in Millimeter-Scale Epitaxial Graphene Junctions. Carbon. 154. PMID 32165760 DOI: 10.1016/J.Carbon.2019.08.002  0.632
2019 Kruskopf M, Rigosi AF, Panna AR, Marzano M, Patel D, Jin H, Newell DB, Elmquist RE. Next-generation crossover-free quantum Hall arrays with superconducting interconnections. Metrologia. 56. PMID 32116392 DOI: 10.1088/1681-7575/Ab3Ba3  0.342
2019 Oe T, Rigosi AF, Kruskopf M, Wu BY, Lee HY, Yang Y, Elmquist RE, Kaneko NH, Jarrett DG. Comparison between NIST Graphene and AIST GaAs Quantized Hall Devices. Ieee Transactions On Instrumentation and Measurement. PMID 32116347 DOI: 10.1109/Tim.2019.2930436  0.396
2019 Hill HM, Chowdhury S, Simpson JR, Rigosi AF, Newell DB, Berger H, Tavazza F, Walker ARH. Phonon origin and lattice evolution in charge density wave states. Physical Review. B. 99. PMID 31579258 DOI: 10.1103/Physrevb.99.174110  0.625
2019 Rigosi AF, Kruskopf M, Hill HM, Jin H, Wu BY, Johnson PE, Zhang S, Berilla M, Hight Walker AR, Hacker CA, Newell DB, Elmquist RE. Gateless and reversible carrier density tunability in epitaxial graphene devices functionalized with chromium tricarbonyl. Carbon. 142. PMID 31097837 DOI: 10.1016/J.Carbon.2018.10.085  0.634
2019 Rigosi AF, Hill H, Krylyuk S, Nguyen NV, Angela R. HW, Davydov AV, Newell DB. Dielectric Properties of NbxW1-xSe2 Alloys Journal of Research of the National Institute of Standards and Technology. 124. DOI: 10.6028/Jres.124.035  0.582
2018 Rigosi AF, Panna AR, Payagala SU, Kruskopf M, Kraft ME, Jones GR, Wu BY, Lee HY, Yang Y, Hu J, Jarrett DG, Newell DB, Elmquist RE. Graphene Devices for Tabletop and High-Current Quantized Hall Resistance Standards. Ieee Transactions On Instrumentation and Measurement. 68. PMID 31274879 DOI: 10.1109/Tim.2018.2882958  0.374
2018 Panchal V, Yang Y, Cheng G, Hu J, Kruskopf M, Liu CI, Rigosi AF, Melios C, Hight Walker AR, Newell DB, Kazakova O, Elmquist RE. Confocal laser scanning microscopy for rapid optical characterization of graphene. Communications Physics. 1. PMID 31093580 DOI: 10.1038/S42005-018-0084-6  0.392
2018 Hu J, Rigosi AF, Lee JU, Lee HY, Yang Y, Liu CI, Elmquist RE, Newell DB. Quantum transport in graphene junctions with moiré superlattice modulation. Physical Review. B. 98. PMID 30997442 DOI: 10.1103/Physrevb.98.045412  0.394
2018 Hill HM, Rigosi AF, Krylyuk S, Tian J, Nguyen NV, Davydov AV, Newell DB, Walker ARH. Comprehensive optical characterization of atomically thin NbSe. Physical Review. B. 98. PMID 30984898 DOI: 10.1103/Physrevb.98.165109  0.633
2018 Hu J, Rigosi AF, Kruskopf M, Yang Y, Wu BY, Tian J, Panna AR, Lee HY, Payagala SU, Jones GR, Kraft ME, Jarrett DG, Watanabe K, Taniguchi T, Elmquist RE, et al. Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards. Scientific Reports. 8: 15018. PMID 30301948 DOI: 10.1038/S41598-018-33466-Z  0.381
2018 Rigosi AF, Liu CI, Wu BY, Lee HY, Kruskopf M, Yang Y, Hill HM, Hu J, Bittle EG, Obrzut J, Hight Walker AR, Elmquist RE, Newell DB. Quantum Hall device data monitoring following encapsulating polymer deposition. Data in Brief. 20: 1201-1208. PMID 30238028 DOI: 10.1016/J.Dib.2018.08.121  0.616
2018 Raja A, Selig M, Berghäuser G, Yu J, Hill HM, Rigosi AF, Brus LE, Knorr A, Heinz TF, Malic E, Chernikov A. Enhancement of exciton-phonon scattering from monolayer to bilayer WS2. Nano Letters. PMID 30096239 DOI: 10.1021/Acs.Nanolett.8B01793  0.785
2018 Rigosi AF, Liu CI, Wu BY, Lee HY, Kruskopf M, Yang Y, Hill HM, Hu J, Bittle EG, Obrzut J, Hight Walker AR, Elmquist RE, Newell DB. Examining epitaxial graphene surface conductivity and quantum Hall device stability with Parylene passivation. Microelectronic Engineering. 194: 51-55. PMID 29881131 DOI: 10.1016/J.Mee.2018.03.004  0.662
2018 Rigosi AF, Hill HM, Glavin NR, Pookpanratana SJ, Yang Y, Boosalis AG, Hu J, Rice A, Allerman AA, Nguyen NV, Hacker CA, Elmquist RE, Hight Walker AR, Newell DB. Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene. 2d Materials. 5. PMID 29545949 DOI: 10.1088/2053-1583/aa9ea3  0.619
2017 Hill HM, Rigosi AF, Chowdhury S, Yang Y, Nguyen NV, Tavazza F, Elmquist RE, Newell DB, Hight Walker AR. Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy. Physical Review. B. 96. PMID 29541699 DOI: 10.1103/Physrevb.96.195437  0.669
2017 Rigosi AF, Liu CI, Glavin NR, Yang Y, Hill HM, Hu J, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Electrical Stabilization of Surface Resistivity in Epitaxial Graphene Systems by Amorphous Boron Nitride Encapsulation. Acs Omega. 2: 2326-2332. PMID 28828410 DOI: 10.1021/acsomega.7b00341  0.62
2017 Rigosi AF, Glavin NR, Liu CI, Yang Y, Obrzut J, Hill HM, Hu J, Lee HY, Hight Walker AR, Richter CA, Elmquist RE, Newell DB. Preservation of Surface Conductivity and Dielectric Loss Tangent in Large-Scale, Encapsulated Epitaxial Graphene Measured by Noncontact Microwave Cavity Perturbations. Small (Weinheim An Der Bergstrasse, Germany). PMID 28544485 DOI: 10.1002/Smll.201700452  0.63
2017 Raja A, Chaves A, Yu J, Arefe G, Hill HM, Rigosi AF, Berkelbach TC, Nagler P, Schüller C, Korn T, Nuckolls C, Hone J, Brus LE, Heinz TF, Reichman DR, et al. Coulomb engineering of the bandgap and excitons in two-dimensional materials. Nature Communications. 8: 15251. PMID 28469178 DOI: 10.1038/Ncomms15251  0.771
2017 Ruppert C, Chernikov A, Hill HM, Rigosi AF, Heinz TF. The role of electronic and phononic excitation in the optical response of monolayer WS2 after ultrafast excitation. Nano Letters. PMID 28059520 DOI: 10.1021/Acs.Nanolett.6B03513  0.689
2017 Hill HM, Rigosi AF, Raja A, Chernikov A, Roquelet C, Heinz TF. Exciton broadening in WS2 /graphene heterostructures Physical Review B. 96. DOI: 10.1103/Physrevb.96.205401  0.789
2016 Hill HM, Rigosi AF, Rim KT, Flynn GW, Heinz TF. Band alignment in MoS2/WS2 transition metal dichalcogenide heterostructures probed by scanning tunneling microscopy and spectroscopy. Nano Letters. PMID 27298270 DOI: 10.1021/Acs.Nanolett.6B01007  0.674
2016 Rigosi AF, Hill HM, Rim KT, Flynn GW, Heinz TF. Electronic band gaps and exciton binding energies in monolayer M ox W1-x S2 transition metal dichalcogenide alloys probed by scanning tunneling and optical spectroscopy Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.075440  0.702
2015 Chernikov A, van der Zande AM, Hill HM, Rigosi AF, Velauthapillai A, Hone J, Heinz TF. Electrical Tuning of Exciton Binding Energies in Monolayer WS_{2}. Physical Review Letters. 115: 126802. PMID 26431003 DOI: 10.1103/Physrevlett.115.126802  0.707
2015 Rigosi AF, Hill HM, Li Y, Chernikov A, Heinz TF. Probing Interlayer Interactions in Transition Metal Dichalcogenide Heterostructures by Optical Spectroscopy: MoS2/WS2 and MoSe2/WSe2. Nano Letters. 15: 5033-8. PMID 26186085 DOI: 10.1021/Acs.Nanolett.5B01055  0.765
2015 Hill HM, Rigosi AF, Roquelet C, Chernikov A, Berkelbach TC, Reichman DR, Hybertsen MS, Brus LE, Heinz TF. Observation of Excitonic Rydberg States in Monolayer MoS2 and WS2 by Photoluminescence Excitation Spectroscopy. Nano Letters. 15: 2992-7. PMID 25816155 DOI: 10.1021/Nl504868P  0.687
2015 Chernikov A, Ruppert C, Hill HM, Rigosi AF, Heinz TF. Population inversion and giant bandgap renormalization in atomically thin WS 2 layers Nature Photonics. 9: 466-470. DOI: 10.1038/Nphoton.2015.104  0.679
2015 Chernikov A, Ruppert C, Hill HM, Rigosi AF, Heinz TF. Population inversion and giant bandgap renormalization in atomically thin WS2 layers Nature Photonics. DOI: 10.1038/nphoton.2015.104  0.619
2014 Li Y, Ludwig J, Low T, Chernikov A, Cui X, Arefe G, Kim YD, van der Zande AM, Rigosi A, Hill HM, Kim SH, Hone J, Li Z, Smirnov D, Heinz TF. Valley splitting and polarization by the Zeeman effect in monolayer MoSe2. Physical Review Letters. 113: 266804. PMID 25615372 DOI: 10.1103/Physrevlett.113.266804  0.732
2014 Chernikov A, Berkelbach TC, Hill HM, Rigosi A, Li Y, Aslan OB, Reichman DR, Hybertsen MS, Heinz TF. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS(2). Physical Review Letters. 113: 076802. PMID 25170725 DOI: 10.1103/Physrevlett.113.076802  0.766
2014 Li Y, Ludwig J, Low T, Chernikov A, Cui X, Arefe G, Kim YD, Van Der Zande AM, Rigosi A, Hill HM, Kim SH, Hone J, Li Z, Smirnov D, Heinz TF. Valley splitting and polarization by the zeeman effect in monolayer MoSe2 Physical Review Letters. 113. DOI: 10.1103/PhysRevLett.113.266804  0.693
2014 Chernikov A, Berkelbach TC, Hill HM, Rigosi A, Li Y, Aslan OB, Reichman DR, Hybertsen MS, Heinz TF. Exciton binding energy and nonhydrogenic Rydberg series in monolayer WS2 Physical Review Letters. 113. DOI: 10.1103/PhysRevLett.113.076802  0.716
2014 Li Y, Chernikov A, Zhang X, Rigosi A, Hill HM, Van Der Zande AM, Chenet DA, Shih EM, Hone J, Heinz TF. Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS2, Mo S e2, WS2, and WS e2 Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205422  0.748
2014 Chernikov A, Berkelbach TC, Hill M. HM, Rigosi A, Li Y, Aslan OB, Reichman DR, Hybertsen MS, Heinz TF. Excitons in atomically thin transition-metal dichalcogenides Optics Infobase Conference Papers.  0.453
2012 Wurstbauer U, Schiros T, Jaye C, Plaut AS, He R, Rigosi A, Gutiérrez C, Fischer D, Pfeiffer LN, Pasupathy AN, Pinczuk A, Garcia JM. Molecular beam growth of graphene nanocrystals on dielectric substrates Carbon. 50: 4822-4829. DOI: 10.1016/J.Carbon.2012.06.008  0.381
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