Year |
Citation |
Score |
2020 |
Peart MR, Borovac D, Sun W, Song R, Tansu N, Wierer JJ. AlInN/GaN diodes for power electronic devices Applied Physics Express. 13: 91006. DOI: 10.35848/1882-0786/Abb180 |
0.541 |
|
2020 |
Borovac D, Sun W, Tan C, Tansu N. Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103. DOI: 10.1063/1.5119371 |
0.728 |
|
2020 |
Borovac D, Sun W, Peart MR, Song R, Wierer JJ, Tansu N. Low background doping in AlInN grown on GaN via metalorganic vapor phase epitaxy Journal of Crystal Growth. 548: 125847. DOI: 10.1016/J.Jcrysgro.2020.125847 |
0.676 |
|
2020 |
Borovac D, Sun W, Song R, Wierer JJ, Tansu N. On the thermal stability of nearly lattice-matched AlInN films grown on GaN via MOVPE Journal of Crystal Growth. 533: 125469. DOI: 10.1016/J.Jcrysgro.2019.125469 |
0.649 |
|
2020 |
Sun W, Kim H, Mawst LJ, Tansu N. Interplay of GaAsP barrier and strain compensation in InGaAs quantum well at near-critical thickness Journal of Crystal Growth. 531: 125381. DOI: 10.1016/J.Jcrysgro.2019.125381 |
0.612 |
|
2019 |
Al Muyeed SA, Sun W, Peart MR, Lentz RM, Wei X, Borovac D, Song R, Tansu N, Wierer JJ. Recombination rates in green-yellow InGaN-based multiple quantum wells with AlGaN interlayers Journal of Applied Physics. 126: 213106. DOI: 10.1063/1.5126965 |
0.686 |
|
2019 |
Fu H, Sun W, Ogidi-Ekoko O, Goodrich JC, Tansu N. Gain characteristics of InGaN quantum wells with AlGaInN barriers Aip Advances. 9: 045013. DOI: 10.1063/1.5086979 |
0.597 |
|
2018 |
Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6 |
0.722 |
|
2018 |
Zeng G, Sun W, Song R, Tansu N, Krick BA. Publisher Correction: Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 8: 2580. PMID 29396471 DOI: 10.1038/S41598-018-19513-9 |
0.689 |
|
2018 |
Wei X, Al Muyeed SA, Peart MR, Sun W, Tansu N, Wierer JJ. Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching Applied Physics Letters. 113: 121106. DOI: 10.1063/1.5046857 |
0.567 |
|
2018 |
Sun W, Al Muyeed SA, Song R, Wierer JJ, Tansu N. Integrating AlInN interlayers into InGaN/GaN multiple quantum wells for enhanced green emission Applied Physics Letters. 112: 201106. DOI: 10.1063/1.5028257 |
0.659 |
|
2017 |
Zeng G, Sun W, Song R, Tansu N, Krick BA. Crystal Orientation Dependence of Gallium Nitride Wear. Scientific Reports. 7: 14126. PMID 29074963 DOI: 10.1038/S41598-017-14234-X |
0.727 |
|
2017 |
Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/S41598-017-12125-9 |
0.762 |
|
2017 |
Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/S41598-017-06889-3 |
0.747 |
|
2017 |
Al Muyeed SA, Sun W, Wei X, Song R, Koleske DD, Tansu N, Wierer JJ. Strain compensation in InGaN-based multiple quantum wells using AlGaN interlayers Aip Advances. 7: 105312. DOI: 10.1063/1.5000519 |
0.664 |
|
2017 |
Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777 |
0.724 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/Srep24412 |
0.736 |
|
2016 |
Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/Srep22983 |
0.746 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/Srep22215 |
0.734 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/Srep19271 |
0.74 |
|
2016 |
Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944 |
0.754 |
|
2015 |
Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692 DOI: 10.1364/Ao.54.010299 |
0.737 |
|
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