| Year |
Citation |
Score |
| 2011 |
Hong-Cheng S, Jun X, Yu L, Wei-Wei M, Wei X, Wei L, Kun-Ji C. Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO 2 Multilayers at Room Temperature Chinese Physics Letters. 28: 67802. DOI: 10.1088/0256-307X/28/6/067802 |
0.337 |
|
| 2009 |
Jian H, Kun-Ji C, Zhong-Hui F, Si-Hua G, Xiang W, Hong-Lin D, Wei L, Xin-Fan H. Origin of Electron and Hole Charging Current Peaks in Nanocrystal-Si Quantum Dot Floating Gate MOS Structure Chinese Physics Letters. 26: 37301. DOI: 10.1088/0256-307X/26/3/037301 |
0.312 |
|
| 2008 |
Zhong-Yuan M, Si-Hua G, De-Yuan C, De-Yuan W, Yao Y, Jiang Z, Rui H, Wei L, Jun X, Ling X, Xin-Fan H, Kun-Ji C, Duan F. The origin of blue photoluminescence from nc-Si/SiO
2
multilayers Chinese Physics B. 17: 303-306. DOI: 10.1088/1674-1056/17/1/053 |
0.378 |
|
| 2008 |
Xiang W, Jian H, Hong-Lin D, Xian-Gao Z, Lin-Wei Y, Xin-Fan H, Wei L, Kun-Ji C. Large Storage Window in a-SiN x /nc-Si/a-SiN x Sandwiched Structure for Nanocrystalline Silicon Floating Gate Memory Application Chinese Physics Letters. 25: 2690-2693. DOI: 10.1088/0256-307X/25/7/099 |
0.371 |
|
| 2008 |
Xiang W, Jian H, Xian-Gao Z, Hong-Lin D, Lin-Wei Y, Xin-Fan H, Wei L, Jun X. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiN x /nc-Si/a-SiN x Structures Chinese Physics Letters. 25: 1094-1097. DOI: 10.1088/0256-307X/25/3/078 |
0.379 |
|
| 2008 |
Heng-Ping D, Rui H, Dan-Qing W, Kun-Ji C, Wei L, Zhong-Yuan M, Jun X, Xin-Fan H. Strong Green Light Emission from Low-Temperature Grown a-SiNx:H Film after Different Oxidation Routes Chinese Physics Letters. 25: 4147-4150. DOI: 10.1088/0256-307X/25/11/084 |
0.308 |
|
| 2007 |
Pei-Gao H, Zhong-Yuan M, Zheng-Yue X, De-Yuan C, Jun X, Bo Q, San C, Wei L, Xin-Fan H, Kun-Ji C, Duan F. Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers Chinese Physics. 16: 1410-1416. DOI: 10.1088/1009-1963/16/5/040 |
0.371 |
|
| 2007 |
Zhong-Yuan M, Pei-Gao H, Wei L, De-Yuan C, De-Yuan W, Bo Q, Jun X, Ling X, Xin-Fan H, Kun-Ji C, Duan F. Correlation between Light Emissions from Amorphous-Si:H/SiO 2 and nc-Si/SiO 2 Multilayers Chinese Physics Letters. 24: 2064-2067. DOI: 10.1088/0256-307X/24/7/076 |
0.367 |
|
| 2006 |
Bo Q, San C, Zhan-Hong C, Kun-Ji C, Yan-Song L, Jun X, Zhong-Yuan M, Wei L, Xin-Fan H. Step-by-Step Laser Crystallization of Amorphous Si:H/SiN x :H Multilayer for Active Layer in Microcavities Chinese Physics Letters. 23: 1302-1305. DOI: 10.1088/0256-307X/23/5/066 |
0.358 |
|
| 2006 |
Zhan-Hong C, Jun X, Yan-Song L, Pei-Gao H, Wei L, Xin-Fan H, Kun-Ji C. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method Chinese Physics Letters. 23: 1029-1031. DOI: 10.1088/0256-307X/23/4/074 |
0.371 |
|
| 2005 |
Liang-Cai W, Kun-Ji C, Lin-Wei Y, Min D, Zhong-Yuan M, Pei-Gao H, Wei L, Xin-Fan H. Electronic Properties of Nanocrystalline-Si Embedded in Asymmetric Ultrathin SiO 2 by In-Situ Fabrication Technique Chinese Physics Letters. 22: 733-736. DOI: 10.1088/0256-307X/22/3/059 |
0.386 |
|
| 2005 |
San C, Bo Q, Jun-Wei W, Kun-Ji C, Jun X, Wei L, Xin-Fan H. Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities Chinese Physics Letters. 22: 230-232. DOI: 10.1088/0256-307X/22/1/066 |
0.319 |
|
| 2002 |
Min D, Lin Z, Yun B, Jian-Jun S, Kai C, Wei L, Xin-Fan H, Kun-Ji C. The charge storage of the nc-Si layer Chinese Physics. 11: 944-947. DOI: 10.1088/1009-1963/11/9/317 |
0.377 |
|
| 2000 |
Jian L, Li W, Xin-fan H, Ming J, Wei L, Zhao-ye W, Jun X, Zhi-guo L, Kun-ji C. Fabrication and characterization of the size-controlled and patterned nc-Si dots* Chinese Physics. 9: 537-540. DOI: 10.1088/1009-1963/9/7/013 |
0.368 |
|
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