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King-ning Tu - Publications

Affiliations: 
1968-1993 Materials Science IBM Thomas J. Watson Research Center, Yorktown Heights, NY, United States 
 1993-2016 Materials Science & Engineering University of California, Los Angeles, Los Angeles, CA 
 2012- Materials and Electrical Engineering City University of Hong Kong, Kowloon, Hong Kong 
 2016- National Chiao Tung University, Taiwan 
Area:
3D IC packaging and joule heating, metal-silicon interfaces, electromigration, pb-free solder joints
Website:
https://www.ee.cityu.edu.hk/~kntu/
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Year Citation  Score
2022 Chou YC, Chen LJ, Tu KN. Uphill Diffusion Induced Point Contact Reaction in Si Nanowires. Nano Letters. PMID 35972227 DOI: 10.1021/acs.nanolett.2c01265  0.588
2020 Li YJ, Tu KN, Chen C. Tensile Properties of <111>-Oriented Nanotwinned Cu with Different Columnar Grain Structures. Materials (Basel, Switzerland). 13. PMID 32183126 DOI: 10.3390/Ma13061310  0.349
2020 Li YJ, Hsu CW, Ting YH, Tsou N, Lo Y, Wu WW, Tu K, Chen C. Deformation induced columnar grain rotation in nanotwinned metals Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 797: 140045. DOI: 10.1016/J.Msea.2020.140045  0.348
2019 Thompson RD, Gupta D, Tu KN. Low-temperature diffusion and solubility of Ni in P-doped Czochralski-grown Si. Physical Review. B, Condensed Matter. 33: 2636-2641. PMID 9938603 DOI: 10.1103/Physrevb.33.2636  0.363
2019 Shen YA, Zhou S, Li J, Tu K, Nishikawa H. Thermomigration induced microstructure and property changes in Sn-58Bi solders Materials & Design. 166: 107619. DOI: 10.1016/J.Matdes.2019.107619  0.371
2018 Juang JY, Lu CL, Chen KJ, Chen CA, Hsu PN, Chen C, Tu KN. Copper-to-copper direct bonding on highly (111)-oriented nanotwinned copper in no-vacuum ambient. Scientific Reports. 8: 13910. PMID 30224717 DOI: 10.1038/S41598-018-32280-X  0.37
2018 Tseng CH, Tu KN, Chen C. Comparison of oxidation in uni-directionally and randomly oriented Cu films for low temperature Cu-to-Cu direct bonding. Scientific Reports. 8: 10671. PMID 30006591 DOI: 10.1038/S41598-018-28812-0  0.34
2017 Chang YW, Cheng Y, Helfen L, Xu F, Tian T, Scheel M, Di Michiel M, Chen C, Tu KN, Baumbach T. Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation. Scientific Reports. 7: 17950. PMID 29263329 DOI: 10.1038/S41598-017-06250-8  0.341
2017 Annuar S, Mahmoodian R, Hamdi M, Tu KN. Intermetallic compounds in 3D integrated circuits technology: a brief review. Science and Technology of Advanced Materials. 18: 693-703. PMID 29057024 DOI: 10.1080/14686996.2017.1364975  0.32
2017 Chu DT, Chu Y, Lin J, Chen Y, Wang C, Song Y, Chiang C, Chen C, Tu K. Growth competition between layer-type and porous-type Cu 3 Sn in microbumps Microelectronics Reliability. 79: 32-37. DOI: 10.1016/J.Microrel.2017.10.001  0.336
2016 Zhang H, Tersoff J, Xu S, Chen H, Zhang Q, Zhang K, Yang Y, Lee CS, Tu KN, Li J, Lu Y. Approaching the ideal elastic strain limit in silicon nanowires. Science Advances. 2: e1501382. PMID 27540586 DOI: 10.1126/Sciadv.1501382  0.354
2016 Chen HP, Huang CW, Wang CW, Wu WW, Liao CN, Chen LJ, Tu KN. Optimization of the nanotwin-induced zigzag surface of copper by electromigration. Nanoscale. PMID 26787289 DOI: 10.1039/C5Nr05418D  0.565
2016 Lin CK, Chen C, Chu DT, Tu KN. Communication-formation of porous Cu3Sn by high-temperature current stressing Ecs Journal of Solid State Science and Technology. 5: P461-P463. DOI: 10.1149/2.0041609Jss  0.379
2016 Liu Y, Chen YT, Gu S, Kim DW, Tu KN. Fracture reliability concern of (Au, Ni)Sn4 phase in 3D integrated circuit microbumps using Ni/Au surface finishing Scripta Materialia. 119: 9-12. DOI: 10.1016/J.Scriptamat.2016.02.025  0.362
2016 Chang YW, Cheng Y, Xu F, Helfen L, Tian T, Di Michiel M, Chen C, Tu KN, Baumbach T. Study of electromigration-induced formation of discrete voids in flip-chip solder joints by in-situ 3D laminography observation and finite-element modeling Acta Materialia. 117: 100-110. DOI: 10.1016/J.Actamat.2016.06.059  0.337
2015 Chou YC, Tang W, Chiou CJ, Chen K, Minor AM, Tu KN. Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions. Nano Letters. 15: 4121-8. PMID 25965773 DOI: 10.1021/Acs.Nanolett.5B01234  0.615
2015 Liu CM, Lin HW, Huang YS, Chu YC, Chen C, Lyu DR, Chen KN, Tu KN. Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu. Scientific Reports. 5: 9734. PMID 25962757 DOI: 10.1038/Srep09734  0.364
2015 Liu Y, Li M, Kim DW, Gu S, Tu KN. Synergistic effect of electromigration and Joule heating on system level weak-link failure in 2.5D integrated circuits Journal of Applied Physics. 118. DOI: 10.1063/1.4932598  0.322
2015 Liu Y, Tamura N, Kim DW, Gu S, Tu KN. A metastable phase of tin in 3D integrated circuit solder microbumps Scripta Materialia. 102: 39-42. DOI: 10.1016/J.Scriptamat.2015.02.009  0.309
2014 Song TB, Chen Y, Chung CH, Yang YM, Bob B, Duan HS, Li G, Tu KN, Huang Y, Yang Y. Nanoscale Joule heating and electromigration enhanced ripening of silver nanowire contacts. Acs Nano. 8: 2804-11. PMID 24517263 DOI: 10.1021/Nn4065567  0.316
2013 Tang W, Picraux ST, Huang JY, Liu X, Tu KN, Dayeh SA. Gold catalyzed nickel disilicide formation: a new solid-liquid-solid phase growth mechanism. Nano Letters. 13: 6009-15. PMID 24274698 DOI: 10.1021/Nl4032023  0.415
2013 Tang W, Picraux ST, Huang JY, Gusak AM, Tu KN, Dayeh SA. Nucleation and atomic layer reaction in nickel silicide for defect-engineered Si nanochannels. Nano Letters. 13: 2748-53. PMID 23713768 DOI: 10.1021/Nl400949N  0.386
2013 Dayeh SA, Tang W, Boioli F, Kavanagh KL, Zheng H, Wang J, Mack NH, Swadener G, Huang JY, Miglio L, Tu KN, Picraux ST. Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires. Nano Letters. 13: 1869-76. PMID 23030346 DOI: 10.1021/Nl3022434  0.327
2013 Liang YC, Lin HW, Chen HP, Chen C, Tu K, Lai YS. Anisotropic grain growth and crack propagation in eutectic microstructure under cyclic temperature annealing in flip-chip SnPb composite solder joints Scripta Materialia. 69: 25-28. DOI: 10.1016/J.Scriptamat.2013.03.018  0.325
2013 Liu TC, Liu CM, Huang YS, Chen C, Tu K. Eliminate Kirkendall voids in solder reactions on nanotwinned copper Scripta Materialia. 68: 241-244. DOI: 10.1016/J.Scriptamat.2012.10.024  0.359
2013 Tu K, Hsiao HY, Chen C. Transition from flip chip solder joint to 3D IC microbump: Its effect on microstructure anisotropy Microelectronics Reliability. 53: 2-6. DOI: 10.1016/J.Microrel.2012.07.029  0.33
2013 Lin H, Lu C, Liu C, Chen C, Chen D, Kuo J, Tu K. Microstructure control of unidirectional growth of η-Cu6Sn5 in microbumps on 〈111〉 oriented and nanotwinned Cu Acta Materialia. 61: 4910-4919. DOI: 10.1016/J.Actamat.2013.04.056  0.329
2012 Tang W, Dayeh SA, Picraux ST, Huang JY, Tu KN. Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts. Nano Letters. 12: 3979-85. PMID 22731955 DOI: 10.1021/Nl3011676  0.345
2012 Hsiao HY, Liu CM, Lin HW, Liu TC, Lu CL, Huang YS, Chen C, Tu KN. Unidirectional growth of microbumps on (111)-oriented and nanotwinned copper. Science (New York, N.Y.). 336: 1007-10. PMID 22628648 DOI: 10.1126/Science.1216511  0.357
2012 Huang YS, Hsiao HY, Chen C, Tu K. The effect of a concentration gradient on interfacial reactions in microbumps of Ni/SnAg/Cu during liquid-state soldering Scripta Materialia. 66: 741-744. DOI: 10.1016/J.Scriptamat.2012.01.046  0.352
2012 Chen C, Hsiao HY, Chang YW, Ouyang F, Tu K. Thermomigration in solder joints Materials Science & Engineering R-Reports. 73: 85-100. DOI: 10.1016/J.Mser.2012.11.001  0.377
2012 Ouyang FY, Tu K, Lai YS. Effect of electromigration induced joule heating and strain on microstructural recrystallization in eutectic SnPb flip chip solder joints Materials Chemistry and Physics. 136: 210-218. DOI: 10.1016/J.Matchemphys.2012.06.054  0.337
2012 Han JK, Choi D, Fujiyoshi M, Chiwata N, Tu K. Current density redistribution from no current crowding to current crowding in Pb-free solder joints with an extremely thick Cu layer Acta Materialia. 60: 102-111. DOI: 10.1016/J.Actamat.2011.09.023  0.747
2011 Zhang X, Xu C, Chong K, Tu KN, Xie YH. Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits. Materials (Basel, Switzerland). 4: 952-962. PMID 28879960 DOI: 10.3390/Ma4060952  0.382
2011 Lu KC, Wu WW, Ouyang H, Lin YC, Huang Y, Wang CW, Wu ZW, Huang CW, Chen LJ, Tu KN. The influence of surface oxide on the growth of metal/semiconductor nanowires. Nano Letters. 11: 2753-8. PMID 21657260 DOI: 10.1021/Nl201037M  0.632
2011 Tian T, Xu F, Kyu Han J, Choi D, Cheng Y, Helfen L, Di Michiel M, Baumbach T, Tu KN. Rapid diagnosis of electromigration induced failure time of Pb-free flip chip solder joints by high resolution synchrotron radiation laminography Applied Physics Letters. 99: 082114. DOI: 10.1063/1.3628342  0.737
2011 Hsiao HY, Hu CC, Guo MY, Chen C, Tu K. Inhibiting the consumption of Cu during multiple reflows of Pb-free solder on Cu Scripta Materialia. 65: 907-910. DOI: 10.1016/J.Scriptamat.2011.08.008  0.327
2010 Chen Z, Kioussis N, Tu KN, Ghoniem N, Yang JM. Inhibiting Adatom diffusion through surface alloying. Physical Review Letters. 105: 015703. PMID 20867465 DOI: 10.1103/Physrevlett.105.015703  0.35
2010 Wu WW, Lu KC, Wang CW, Hsieh HY, Chen SY, Chou YC, Yu SY, Chen LJ, Tu KN. Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. Nano Letters. 10: 3984-9. PMID 20809607 DOI: 10.1021/Nl101842W  0.71
2010 Chen C, Tong HM, Tu K. Electromigration and Thermomigration in Pb-Free Flip-Chip Solder Joints Annual Review of Materials Research. 40: 531-555. DOI: 10.1146/Annurev.Matsci.38.060407.130253  0.335
2010 Xu D, Sriram V, Ozolins V, Yang J, Tu KN, Stafford GR, Beauchamp C. Erratum: “In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper” [J. Appl. Phys. 105, 023521 (2009)] Journal of Applied Physics. 108: 099901. DOI: 10.1063/1.3503174  0.434
2010 Xu D, Kwan WL, Chen K, Zhang X, Ozolins V, Tu K. Erratum: “Nanotwin formation in copper thin films by stress/strain relaxation in pulse electrodeposition” [Appl. Phys. Lett. 91, 254105 (2007)] Applied Physics Letters. 97: 129904. DOI: 10.1063/1.3489689  0.461
2010 Chen K, Tamura N, Tang W, Kunz M, Chou Y, Tu K, Lai Y. High precision thermal stress study on flip chips by synchrotron polychromatic x-ray microdiffraction Journal of Applied Physics. 107: 63502. DOI: 10.1063/1.3309750  0.572
2010 Chou Y, Wu W, Lee C, Liu C, Chen L, Tu K. Heterogeneous and Homogeneous Nucleation of Epitaxial NiSi2 in [110] Si Nanowires The Journal of Physical Chemistry C. 115: 397-401. DOI: 10.1021/Jp108686Y  0.638
2009 Chou YC, Wu WW, Chen LJ, Tu KN. Homogeneous nucleation of epitaxial CoSi2 and NiSi in Si nanowires. Nano Letters. 9: 2337-42. PMID 19453125 DOI: 10.1021/Nl900779J  0.628
2009 Chen K, Tamura N, Kunz M, Tu K, Lai Y. In situ measurement of electromigration-induced transient stress in Pb-free Sn–Cu solder joints by synchrotron radiation based x-ray polychromatic microdiffraction Journal of Applied Physics. 106: 23502. DOI: 10.1063/1.3157196  0.318
2009 Xu D, Sriram V, Ozolins V, Yang JM, Tu KN, Stafford GR, Beauchamp C. In situ measurements of stress evolution for nanotwin formation during pulse electrodeposition of copper Journal of Applied Physics. 105. DOI: 10.1063/1.3068191  0.474
2009 Liang SW, Hsiao HY, Chen C, Xu L, Tu K, Lai YS. Nonuniform and Negative Marker Displacements Induced by Current Crowding During Electromigration in Flip-Chip Sn-0.7Cu Solder Joints Journal of Electronic Materials. 38: 2443-2448. DOI: 10.1007/S11664-009-0913-1  0.337
2008 Wang DH, Xu D, Wang Q, Hao YJ, Jin GQ, Guo XY, Tu KN. Periodically twinned SiC nanowires. Nanotechnology. 19: 215602. PMID 21730575 DOI: 10.1088/0957-4484/19/21/215602  0.423
2008 Chen KC, Wu W, Liao CN, Chen LJ, Tu K. Observation of atomic diffusion at twin-modified grain boundaries in copper Science. 321: 1066-1069. PMID 18719278 DOI: 10.1126/Science.1160777  0.309
2008 Chou YC, Wu WW, Cheng SL, Yoo BY, Myung N, Chen LJ, Tu KN. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si. Nano Letters. 8: 2194-9. PMID 18616326 DOI: 10.1021/Nl080624J  0.603
2008 Lin YC, Lu KC, Wu WW, Bai J, Chen LJ, Tu KN, Huang Y. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Letters. 8: 913-8. PMID 18266331 DOI: 10.1021/Nl073279R  0.581
2008 Chen K, Tamura N, Tu K. In-situ Study of Electromigration-induced Grain Rotation in Pb-free Solder Joint by Synchrotron Microdiffraction Mrs Proceedings. 1116: 19-24. DOI: 10.1557/Proc-1116-I05-06  0.356
2008 Chen K, Tamura N, Tu K. In-situ early stage electromigration study in Al line using synchrotron polychromatic X-ray microdiffraction Mrs Proceedings. 1079. DOI: 10.1557/Proc-1079-N05-02  0.345
2008 Wei CC, Liu PC, Chen C, Tu K. Electromigration-induced Pb and Sn whisker growth in SnPb solder stripes Journal of Materials Research. 23: 2017-2022. DOI: 10.1557/Jmr.2008.0253  0.366
2008 Xu Y, Ou S, Tu K, Zeng K, Dunne R. Measurement of impact toughness of eutectic SnPb and SnAgCu solder joints in ball grid array by mini-impact tester Journal of Materials Research. 23: 1482-1487. DOI: 10.1557/Jmr.2008.0186  0.537
2008 Xu L, Xu D, Tu KN, Cai Y, Wang N, Dixit P, Pang JHL, Miao J. Structure and migration of (112) step on (111) twin boundaries in nanocrystalline copper Journal of Applied Physics. 104: 113717. DOI: 10.1063/1.3035944  0.477
2008 Chen HY, Chen C, Tu K. Failure induced by thermomigration of interstitial Cu in Pb-free flip chip solder joints Applied Physics Letters. 93: 122103. DOI: 10.1063/1.2990047  0.388
2008 Yang D, Chan YC, Tu K. The time-dependent melting failure in flip chip lead-free solder interconnects under current stressing Applied Physics Letters. 93: 41907. DOI: 10.1063/1.2963473  0.356
2008 Tong MS, Sturgess D, Tu K, Yang JM. Solder joints fabricated by explosively reacting nanolayers Applied Physics Letters. 92: 144101. DOI: 10.1063/1.2907850  0.399
2008 Liang SW, Chang YW, Chen C, Preciado J, Tu K. Effect of Migration and Condensation of Pre-existing Voids on Increase in Bump Resistance of Flip Chips on Flexible Substrates during Electromigration Journal of Electronic Materials. 37: 962-967. DOI: 10.1007/S11664-008-0463-Y  0.312
2007 Lu KC, Wu WW, Wu HW, Tanner CM, Chang JP, Chen LJ, Tu KN. In situ control of atomic-scale Si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Letters. 7: 2389-94. PMID 17604405 DOI: 10.1021/Nl071046U  0.595
2007 Xu C, Zhang X, Tu K, Xie Y. Nickel Displacement Deposition of Porous Silicon with Ultrahigh Aspect Ratio Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2430690  0.363
2007 Yang D, Wu BY, Chan YC, Tu K. Microstructural evolution and atomic transport by thermomigration in eutectic tin-lead flip chip solder joints Journal of Applied Physics. 102: 43502. DOI: 10.1063/1.2769270  0.352
2007 Suh J, Tu K, Tamura N. Dramatic morphological change of scallop-type Cu6Sn5 formed on (001) single crystal copper in reaction between molten SnPb solder and Cu Applied Physics Letters. 91: 51907. DOI: 10.1063/1.2761840  0.346
2007 Lu KC, Tu K, Wu W, Chen LJ, Yoo BY, Myung NV. Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si Applied Physics Letters. 90: 253111. DOI: 10.1063/1.2750530  0.409
2007 Xu L, Dixit P, Miao J, Pang JHL, Zhang X, Tu K, Preisser R. Through-wafer electroplated copper interconnect with ultrafine grains and high density of nanotwins Applied Physics Letters. 90: 33111. DOI: 10.1063/1.2432284  0.311
2007 Zhang X, Chen Z, Tu K. Immersion nickel deposition on blank silicon in aqueous solution containing ammonium fluoride Thin Solid Films. 515: 4696-4701. DOI: 10.1016/J.Tsf.2006.11.033  0.4
2007 Xu C, Li M, Zhang X, Tu K, Xie Y. Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio Electrochimica Acta. 52: 3901-3909. DOI: 10.1016/J.Electacta.2006.11.007  0.316
2007 Zhao L, Li N, Langner A, Steinhart M, Tan TY, Pippel E, Hofmeister H, Tu KN, Gösele U. Crystallization of amorphous SiO2 microtubes catalyzed by lithium Advanced Functional Materials. 17: 1952-1957. DOI: 10.1002/Adfm.200601104  0.31
2006 Zhang X, Tu KN. Preparation of hierarchically porous nickel from macroporous silicon. Journal of the American Chemical Society. 128: 15036-7. PMID 17117824 DOI: 10.1021/Ja062562+  0.328
2006 Nah JW, Ren F, PaiK KW, Tu KN. Effect of electromigration on mechanical shear behavior of flip chip solder joints Journal of Materials Research. 21: 698-702. DOI: 10.1557/Jmr.2006.0086  0.572
2006 Zhang X, Tu K, Xie YH, Tung CH. High Aspect Ratio Nickel Structures Fabricated by Electrochemical Replication of Hydrofluoric Acid Etched Silicon Electrochemical and Solid State Letters. 9. DOI: 10.1149/1.2211867  0.386
2006 Ouyang FY, Tu K, Lai YS, Gusak AM. Effect of entropy production on microstructure change in eutectic SnPb flip chip solder joints by thermomigration Applied Physics Letters. 89: 221906. DOI: 10.1063/1.2385205  0.34
2006 Huang AT, Tu KN, Lai YS. Effect of the combination of electromigration and thermomigration on phase migration and partial melting in flip chip composite SnPb solder joints Journal of Applied Physics. 100. DOI: 10.1063/1.2227621  0.541
2006 Huang AT, Gusak AM, Tu KN, Lai YS. Thermomigration in SnPb composite flip chip solder joints Applied Physics Letters. 88. DOI: 10.1063/1.2192694  0.578
2006 Ok YW, Seong TY, Choi CJ, Tu K. Field emission from Ni-disilicide nanorods formed by using implantation of Ni in Si coupled with laser annealing Applied Physics Letters. 88: 43106. DOI: 10.1063/1.2167797  0.34
2006 Nah JW, Ren F, Tu K, Venk S, Camara G. Electromigration in Pb-free flip chip solder joints on flexible substrates Journal of Applied Physics. 99: 23520. DOI: 10.1063/1.2163982  0.542
2006 Zhang X, Ren F, Goorsky MS, Tu KN. Study of the initial stage of electroless Ni deposition on Si (100) substrates in aqueous alkaline solution Surface and Coatings Technology. 201: 2724-2732. DOI: 10.1016/J.Surfcoat.2006.05.025  0.516
2006 Yan MY, Tu K, Vairagar AV, Mhaisalkar SG, Krishnamoorthy A. A direct measurement of electromigration induced drift velocity in Cu dual damascene interconnects Microelectronics Reliability. 46: 1392-1395. DOI: 10.1016/J.Microrel.2005.11.004  0.35
2006 Tu K, Chen C, Wu AT. Stress analysis of spontaneous Sn whisker growth Journal of Materials Science: Materials in Electronics. 18: 269-281. DOI: 10.1007/S10854-006-9029-Z  0.317
2006 Zhang X, Tu K, Xie Y, Tung C, Xu S. Single‐Step Fabrication of Nickel Films with Arrayed Macropores and Nanostructured Skeletons Advanced Materials. 18: 1905-1909. DOI: 10.1002/Adma.200502155  0.361
2005 Sobchenko IV, Gusak AM, Tu K. 3D Monte-Carlo Model of Deposition and Grain Growth in Thin Films Defect and Diffusion Forum. 1281-1286. DOI: 10.4028/Www.Scientific.Net/Ddf.237-240.1281  0.309
2005 Tu K, Suh JO, Wu ATC, Tamura N, Tung CH. Mechanism and prevention of spontaneous tin whisker growth Materials Transactions. 46: 2300-2308. DOI: 10.2320/Matertrans.46.2300  0.374
2005 Chong K, Zhang X, Tu K, Huang D, Chang M, Xie Y. Three-Dimensional Substrate Impedance Engineering Based on<tex>$hbox p ^-$</tex>/<tex>$hbox p ^+$</tex>Si Substrate for Mixed-Signal System-on-Chip (SoC) Ieee Transactions On Electron Devices. 52: 2440-2446. DOI: 10.1109/Ted.2005.857190  0.321
2005 Yan MY, Tu K, Vairagar AV, Mhaisalkar SG, Krishnamoorthy A. Confinement of electromigration induced void propagation in Cu interconnect by a buried Ta diffusion barrier layer Applied Physics Letters. 87: 261906. DOI: 10.1063/1.2158030  0.356
2005 Yan MY, Suh JO, Ren F, Tu K, Vairagar AV, Mhaisalkar SG, Krishnamoorthy A. Effect of Cu3Sn coatings on electromigration lifetime improvement of Cu dual-damascene interconnects Applied Physics Letters. 87: 211103. DOI: 10.1063/1.2132536  0.537
2005 Hsu YC, Chou CK, Liu PC, Chen C, Yao DJ, Chou T, Tu K. Electromigration in Pb-free SnAg3.8Cu0.7 solder stripes Journal of Applied Physics. 98: 33523. DOI: 10.1063/1.1999836  0.348
2005 Nah JW, Suh JO, Tu KN. Effect of current crowding and Joule heating on electromigration-induced failure in flip chip composite solder joints tested at room temperature Journal of Applied Physics. 98. DOI: 10.1063/1.1949719  0.372
2005 Yeh YT, Chou CK, Hsu YC, Chen C, Tu K. Threshold current density of electromigration in eutectic SnPb solder Applied Physics Letters. 86: 203504. DOI: 10.1063/1.1929870  0.362
2005 Gan H, Tu KN. Polarity effect of electromigration on kinetics of intermetallic compound formation in Pb-free solder V-groove samples Journal of Applied Physics. 97. DOI: 10.1063/1.1861151  0.389
2005 Alam MO, Chan YC, Tu K, Kivilahti JK. Effect of 0.5 wt % Cu in Sn-3.5%Ag solder balls on the solid state interfacial reaction with Au/Ni/Cu bond pads for ball grid array (BGA) applications Chemistry of Materials. 17: 2223-2226. DOI: 10.1021/Cm0478069  0.351
2004 Alam MO, Chan YC, Tu K. Elimination of Au-embrittlement in solder joints on Au/Ni metallization Journal of Materials Research. 19: 1303-1306. DOI: 10.1557/Jmr.2004.0170  0.367
2004 Lee T-T, Lee T, Tu K. A study of electromigration in 3-D flip Chip Solder joint using numerical Simulation of heat flux and current density Ieee Transactions On Components and Packaging Technologies. 27: 472-479. DOI: 10.1109/Tcapt.2004.831774  0.494
2004 Vairagar AV, Mhaisalkar SG, Krishnamoorthy A, Tu K, Gusak AM, Meyer MA, Zschech E. In situ observation of electromigration-induced void migration in dual-damascene Cu interconnect structures Applied Physics Letters. 85: 2502-2504. DOI: 10.1063/1.1795978  0.355
2004 Date M, Shoji T, Fujiyoshi M, Sato K, Tu K. Ductile-to-brittle transition in Sn–Zn solder joints measured by impact test Scripta Materialia. 51: 641-645. DOI: 10.1016/J.Scriptamat.2004.06.027  0.35
2004 Ou S, Xu G, Xu Y, Tu K. The application of lead-free solder to optical fiber packaging Journal of Electronic Materials. 33: 1440-1444. DOI: 10.1007/S11664-004-0084-Z  0.546
2003 Lee KY, Li M, Tu K. Growth and ripening of (Au, Ni)Sn4 phase in Pb-free and Pb-containing solders on Ni/Au metallization Journal of Materials Research. 18: 2562-2570. DOI: 10.1557/Jmr.2003.0359  0.371
2003 Ha JS, Oh TS, Tu K. Effect of supersaturation of Cu on reaction and intermetallic compound formation between Sn-Cu solder and thin film metallization Journal of Materials Research. 18: 2109-2114. DOI: 10.1557/Jmr.2003.0296  0.338
2003 Tu K, Gusak AM, Sobchenko I. Linear rate of grain growth in thin films during deposition Physical Review B. 67: 245408. DOI: 10.1103/Physrevb.67.245408  0.341
2003 Nah JW, Paik KW, Suh JO, Tu KN. Mechanism of electromigration-induced failure in the 97Pb-3Sn and 37Pb-63Sn composite solder joints Journal of Applied Physics. 94: 7560-7566. DOI: 10.1063/1.1628388  0.377
2003 Alam MO, Chan YC, Tu K. Effect of 0.5 wt % Cu addition in Sn–3.5%Ag solder on the dissolution rate of Cu metallization Journal of Applied Physics. 94: 7904-7909. DOI: 10.1063/1.1628387  0.344
2003 Alam MO, Chan YC, Tu K. Effect of reaction time and P content on mechanical strength of the interface formed between eutectic Sn–Ag solder and Au/electroless Ni(P)/Cu bond pad Journal of Applied Physics. 94: 4108-4115. DOI: 10.1063/1.1602563  0.358
2003 Tu K, Gusak AM, Li M. Physics and materials challenges for lead-free solders Journal of Applied Physics. 93: 1335-1353. DOI: 10.1063/1.1517165  0.331
2003 Alam MO, Chan YC, Tu K. Effect of 0.5 wt % Cu in Sn-3.5%ag solder on the interfacial reaction with Au/Ni metallization Chemistry of Materials. 15: 4340-4342. DOI: 10.1021/Cm034692C  0.347
2003 Choi WJ, Lee TY, Tu K, Tamura N, Celestre RS, MacDowell AA, Bong YY, Nguyen L. Tin whiskers studied by synchrotron radiation scanning X-ray micro-diffraction Acta Materialia. 51: 6253-6261. DOI: 10.1016/S1359-6454(03)00448-8  0.33
2002 Li M, Zhang F, Chen WT, Zeng K, Tu K, Balkan H, Elenius P. Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films Journal of Materials Research. 17: 1612-1621. DOI: 10.1557/Jmr.2002.0239  0.372
2002 Liao CN, Tu K. Direct measurement of contact temperature using Seebeck potential Journal of Applied Physics. 92: 635-637. DOI: 10.1063/1.1485107  0.378
2002 Sheng GTT, Hu CF, Choi WJ, Tu K, Bong YY, Nguyen L. Tin whiskers studied by focused ion beam imaging and transmission electron microscopy Journal of Applied Physics. 92: 64-69. DOI: 10.1063/1.1481202  0.363
2002 Yeh ECC, Choi WJ, Tu K, Elenius P, Balkan H. Current-crowding-induced electromigration failure in flip chip solder joints Applied Physics Letters. 80: 580-582. DOI: 10.1063/1.1432443  0.325
2002 Zeng K, Tu K. Six cases of reliability study of Pb-free solder joints in electronic packaging technology Materials Science & Engineering R-Reports. 38: 55-105. DOI: 10.1016/S0927-796X(02)00007-4  0.37
2001 Lin HH, Cheng SL, Chen LJ, Chen C, Tu K. Enhanced dopant activation and elimination of end-of-range defects in BF2+-implanted silicon-on-insulator by high-density current Applied Physics Letters. 79: 3971-3973. DOI: 10.1063/1.1423773  0.327
2001 Tu K, Lee TY, Jang JW, Li L, Frear DR, Zeng K, Kivilahti JK. Wetting reaction versus solid state aging of eutectic SnPb on Cu Journal of Applied Physics. 89: 4843-4849. DOI: 10.1063/1.1357469  0.312
2001 Huynh QT, Liu CY, Chen C, Tu KN. Electromigration in eutectic SnPb solder lines Journal of Applied Physics. 89: 4332-4335. DOI: 10.1063/1.1357459  0.363
2000 Huang JS, Chen C, Yeh CC, Tu K, Shofner TL, Drown JL, Irwin RB, Vartuli CB. Effect of current crowding on contact failure in heavily doped n+- and p+-silicon-on-insulator Journal of Materials Research. 15: 2387-2392. DOI: 10.1557/Jmr.2000.0343  0.355
2000 Chen C, Tu K, Tung CH, Sheng TT, Ploessl A, Scholz R, Gösele U. Twist-type silicon bicrystals and compliant substrates prepared from silicon-on-insulator wafers Philosophical Magazine. 80: 881-891. DOI: 10.1080/01418610008212088  0.381
2000 Liu CY, Chen C, Tu K. Electromigration in Sn–Pb solder strips as a function of alloy composition Journal of Applied Physics. 88: 5703-5709. DOI: 10.1063/1.1319327  0.373
2000 Xu Y, Tsai Y, Zheng DW, Tu K, Ong CW, Choy CL, Zhao B, Liu QZ, Brongo M. Measurement of mechanical properties for dense and porous polymer films having a low dielectric constant Journal of Applied Physics. 88: 5744-5750. DOI: 10.1063/1.1287756  0.304
2000 Zheng DW, Xu YH, Tsai YP, Tu K, Patterson P, Zhao B, Liu QZ, Brongo M. Mechanical property measurement of thin polymeric-low dielectric-constant films using bulge testing method Applied Physics Letters. 76: 2008-2010. DOI: 10.1063/1.126237  0.323
2000 Luo YH, Liu JL, Jin G, Wang KL, Moore CD, Goorsky MS, Chih C, Tu K. Low-dislocation relaxed SiGe grown on an effective compliant substrate Journal of Electronic Materials. 29: 950-955. DOI: 10.1007/S11664-000-0187-0  0.415
1999 Jang JW, Kim PG, Tu K, Lee M. High-temperature lead-free SnSb solders: Wetting reactions on Cu foils and phased-in Cu–Cr thin films Journal of Materials Research. 14: 3895-3900. DOI: 10.1557/Jmr.1999.0527  0.385
1999 Zheng DW, Wen W, Tu KN, Totta PA. In situ scanning electron microscopy study of eutectic SnPb and pure Sn wetting on Au/Cu/Cr multilayered thin films Journal of Materials Research. 14: 745-749. DOI: 10.1557/Jmr.1999.0100  0.347
1999 Liao CN, Chen C, Huang JS, Tu K. Asymmetrical heating behavior of doped Si channels in bulk silicon and in silicon-on-insulator under high current stress Journal of Applied Physics. 86: 6895-6901. DOI: 10.1063/1.371769  0.351
1999 Liao CN, Chen C, Tu K. Thermoelectric characterization of Si thin films in silicon-on-insulator wafers Journal of Applied Physics. 86: 3204-3208. DOI: 10.1063/1.371190  0.381
1999 Chen C, Huang JS, Liao CN, Tu K. Dopant activation of heavily doped silicon-on-insulator by high density currents Journal of Applied Physics. 86: 1552-1557. DOI: 10.1063/1.370928  0.353
1999 Kim PG, Jang JW, Tu K, Frear DR. Kinetic analysis of interfacial diffusion accompanied by intermetallic compound formation Journal of Applied Physics. 86: 1266-1272. DOI: 10.1063/1.370880  0.328
1999 Jang JW, Kim PG, Tu K, Frear DR, Thompson P. Solder reaction-assisted crystallization of electroless Ni-P under bump metallization in low cost flip chip technology Journal of Applied Physics. 85: 8456-8463. DOI: 10.1063/1.370627  0.371
1999 Zuruzi AS, Chiu CH, Chen WT, Lahiri SK, Tu K. Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow Applied Physics Letters. 75: 3635-3637. DOI: 10.1063/1.125412  0.339
1999 Liu CY, Chen C, Liao CN, Tu K. Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes Applied Physics Letters. 75: 58-60. DOI: 10.1063/1.124276  0.383
1998 Jia Z, Pan GZ, Tu K. Grain Growth by Digm in Ni Thin Film Under High Tensile Stress Mrs Proceedings. 516: 95-101. DOI: 10.1557/Proc-516-95  0.341
1998 Liao CN, Tu K. Asymmetrical Heating Behavior at Ni/Doped-Si Junctions for Soi Structures Mrs Proceedings. 514: 425. DOI: 10.1557/Proc-514-425  0.329
1998 Zheng DW, Jia ZY, Liu CY, Wen W, Tu KN. Size dependent dewetting and sideband reaction of eutectic SnPb on Au/Cu/Cr multilayered thin film Journal of Materials Research. 13: 1103-1106. DOI: 10.1557/Jmr.1998.0152  0.366
1998 Huang JS, Liao CN, Tu K, Cheng SL, Chen LJ. Abnormal electrical behavior and phase changes in implanted p+- and n+-Si channels under high current densities Journal of Applied Physics. 84: 4788-4796. DOI: 10.1063/1.368802  0.35
1998 Chu JJ, Chen LJ, Tu K. Localized epitaxial growth of IrSi3 on (111) and (001) silicon Journal of Applied Physics. 63: 1163-1167. DOI: 10.1063/1.340024  0.375
1998 Chow LA, Xu YH, Dunn B, Tu K, Chiang C. Cracking behavior of xerogel silica films on silicon substrates Applied Physics Letters. 73: 2944-2946. DOI: 10.1063/1.122638  0.305
1998 Kim PG, Tu K. Fast dissolution and soldering reactions on Au foils Materials Chemistry and Physics. 53: 165-171. DOI: 10.1016/S0254-0584(97)02076-2  0.376
1997 Huang JS, Huang SS, Tu K, Deng F, Lau SS, Cheng SL, Chen LJ. Kinetics Of Cu3Ge Formation And Reaction With Al Journal of Applied Physics. 82: 644-649. DOI: 10.1063/1.366291  0.37
1997 Huang JS, Tu K, Bedell SW, Lanford WA, Cheng SL, Lai JB, Chen LJ. Polarity Effect On Failure Of Ni And Ni2Si Contacts On Si Journal of Applied Physics. 82: 2370-2377. DOI: 10.1063/1.366047  0.404
1997 Pan GZ, Tu K, Prussin A. Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon Journal of Applied Physics. 81: 78-84. DOI: 10.1063/1.364099  0.332
1997 Pan GZ, Liu AA, Kim HK, Tu K, Totta PA. Microstructures of phased-in Cr–Cu/Cu/Au bump-limiting metallization and its soldering behavior with high Pb content and eutectic PbSn solders Applied Physics Letters. 71: 2946-2948. DOI: 10.1063/1.120224  0.394
1997 Pan GZ, Tu K, Prussin S. Microstructural evolution of {113} rodlike defects and {111} dislocation loops in silicon-implanted silicon Applied Physics Letters. 71: 659-661. DOI: 10.1063/1.119821  0.349
1997 Huang JS, Zhang J, Cuevas A, Tu K. Recrystallization and grain growth in bulk Cu and Cu(Sn) alloy Materials Chemistry and Physics. 49: 33-41. DOI: 10.1016/S0254-0584(97)80124-1  0.366
1997 Chen C, Pan GZ, Tu K. The preparation of twist-type bicrystals of silicon Materials Chemistry and Physics. 47: 90-92. DOI: 10.1016/S0254-0584(97)80034-X  0.312
1996 Huang JS, Tu K. Novel Dopant Activation of Heavily Doped p+-Si by High Current Densities. Physical Review Letters. 77: 4926-4929. PMID 10062670 DOI: 10.1103/Physrevlett.77.4926  0.323
1996 Huang JS, Liou HK, Tu K. Polarity effect of electromigration in Ni2Si contacts on Si. Physical Review Letters. 76: 2346-2349. PMID 10060674 DOI: 10.1103/Physrevlett.76.2346  0.32
1996 Kim H, Tu K. Kinetic analysis of the soldering reaction between eutectic SnPb alloy and Cu accompanied by ripening. Physical Review B. 53: 16027-16034. PMID 9983443 DOI: 10.1103/Physrevb.53.16027  0.335
1996 Zou YL, Alford TL, Adams D, Laursen T, Tu K, Morton R, Lau SS. Encapsulation of Silver Via Nitridation of Ag/Ti Bilayer Structures Mrs Proceedings. 427. DOI: 10.1557/Proc-427-355  0.381
1996 Kim PG, Tu K. Morphology of wetting reaction of eutectic SnPb solder on Au foils Journal of Applied Physics. 80: 3822-3827. DOI: 10.1063/1.363336  0.352
1996 Kim HK, Tu K, Totta PA. Ripening‐assisted asymmetric spalling of Cu‐Sn compound spheroids in solder joints on Si wafers Applied Physics Letters. 68: 2204-2206. DOI: 10.1063/1.116013  0.427
1996 Tu K. Cu/Sn interfacial reactions: thin-film case versus bulk case Materials Chemistry and Physics. 46: 217-223. DOI: 10.1016/S0254-0584(97)80016-8  0.379
1996 Laursen T, Adams D, Alford TL, Tu K, Deng F, Morton R, Lau SS. Encapsulation of silver by nitridation of AgTi alloy/bilayer structures Thin Solid Films. 411-416. DOI: 10.1016/S0040-6090(96)08964-X  0.386
1995 Shi FG, Tu K. Entropic origin of the free energy barrier to nucleation of crystallites in amorphous CoSi2 thin films. Physical Review Letters. 74: 4476-4478. PMID 10058516 DOI: 10.1103/Physrevlett.74.4476  0.306
1995 Wang Y, Tu K. Ultrafast intermetallic compound formation between eutectic SnPb and Pd where the intermetallic is not a diffusion barrier Applied Physics Letters. 67: 1069-1071. DOI: 10.1063/1.114467  0.303
1995 Kim HK, Liou HK, Tu K. Three‐dimensional morphology of a very rough interface formed in the soldering reaction between eutectic SnPb and Cu Applied Physics Letters. 66: 2337-2339. DOI: 10.1063/1.113975  0.351
1994 Tu K. Irreversible processes of spontaneous whisker growth in bimetallic Cu-Sn thin-film reactions. Physical Review B. 49: 2030-2034. PMID 10011007 DOI: 10.1103/Physrevb.49.2030  0.353
1994 Aboelfotoh MO, Tu KN, Nava F, Michelini M. Electrical transport properties of Cu3Ge thin films Journal of Applied Physics. 75: 1616-1619. DOI: 10.1063/1.356400  0.33
1994 Liang JM, Chen LJ, Markov I, Singco GU, Shi LT, Farrell C, Tu K. Crystallization of amorphous CoSi2 thin films I. kinetics of nucleation and growth Materials Chemistry and Physics. 38: 250-257. DOI: 10.1016/0254-0584(94)90199-6  0.358
1993 Lim BS, Pritchet WC, Rodbell KP, Tu K. Thermal behavior of Al and Al-3 at. % Ge thin films on Si wafers Journal of Applied Physics. 74: 2945-2947. DOI: 10.1063/1.354623  0.368
1993 Chou ML, Rishton SA, Tu KN, Chen H. Microstructural changes in confined submicrometer aluminum films Journal of Applied Physics. 73: 2575-2577. DOI: 10.1063/1.353069  0.368
1993 Herd SR, Fisher IM, Singco GU, Thompson RD, Tu K. Solid phase amorphization and crystallization in multilayer and bilayer Rh-Si thin films Materials Chemistry and Physics. 34: 274-284. DOI: 10.1016/0254-0584(93)90047-P  0.416
1992 Li J, Mayer JW, Tu KN. Nucleation and growth of Cu2O in the reduction of CuO thin films. Physical Review. B, Condensed Matter. 45: 5683-5686. PMID 10000291 DOI: 10.1103/Physrevb.45.5683  0.343
1992 Tu K, Brown LM. Grain boundary electromigration and creep Materials Chemistry and Physics. 32: 49-55. DOI: 10.1016/0254-0584(92)90247-6  0.305
1991 Matsuura M, Petkie R, Singco G, Tu K. Solid state amorphization of RE-TM (RE = Ce, Er and TM = Fe, Co) multilayers Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 133: 551-554. DOI: 10.1016/0921-5093(91)90132-7  0.313
1990 Allen LH, Mayer JW, Tu KN, Feldman LC. Kinetic study of Si recrystallization in the reaction between Au and polycrystalline-Si films. Physical Review. B, Condensed Matter. 41: 8213-8220. PMID 9993144 DOI: 10.1103/Physrevb.41.8213  0.382
1990 Blanpain B, Mayer JW, Liu JC, Tu K. Kinetic description of the transition from a one‐phase to a two‐phase growth regime in Al/Pd lateral diffusion couples Journal of Applied Physics. 68: 3259-3267. DOI: 10.1063/1.346377  0.323
1990 Thompson RD, Angilello J, Tu K. Crystallization kinetics of amorphous NiSix films Thin Solid Films. 188: 259-265. DOI: 10.1016/0040-6090(90)90288-O  0.352
1989 Spit FHM, Gupta D, Tu K. Diffusivity and solubility of Ni (63Ni) in monocrystalline Si. Physical Review B. 39: 1255-1260. PMID 9948311 DOI: 10.1103/Physrevb.39.1255  0.355
1989 Li J, Wang SQ, Mayer JW, Tu KN. Oxygen-diffusion-induced phase boundary migration in copper oxide thin films. Physical Review. B, Condensed Matter. 39: 12367-12370. PMID 9948095 DOI: 10.1103/Physrevb.39.12367  0.343
1989 Schrott AG, Singco G, Tu K. Surface segregation of Ba in polycrystalline YBa2Cu3O7 oxides: The effect of silver Applied Physics Letters. 55: 2126-2128. DOI: 10.1063/1.102081  0.306
1989 Robrock KH, Tu K, Abraham DW, Clabes JB. Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy Applied Physics Letters. 54: 1543-1545. DOI: 10.1063/1.101386  0.36
1989 Smith DA, Tu K, Weiss BZ. In-situ studies of the crystallization of amorphous CoSi2 films Ultramicroscopy. 30: 90-96. DOI: 10.1016/0304-3991(89)90176-9  0.354
1988 Zhang ZN, Tu KY, Xu YK, Zhang WM, Liu ZT, Ou SH. Treatment of longitudinal injuries in avascular area of meniscus in dogs by trephination. Arthroscopy : the Journal of Arthroscopic & Related Surgery : Official Publication of the Arthroscopy Association of North America and the International Arthroscopy Association. 4: 151-9. PMID 3166652 DOI: 10.1016/s0749-8063(88)80019-7  0.416
1988 Chou TC, Tu K. Interaction of a polycrystalline silicon/SiO2/silicon substrate under thermal/electrical fields Applied Physics Letters. 52: 1317-1319. DOI: 10.1063/1.99684  0.414
1988 Cros A, Tu K, Smith DA, Weiss BZ. Low-temperature amorphous-to-crystalline transformation of CoSi2 films Applied Physics Letters. 52: 1311-1313. DOI: 10.1063/1.99683  0.325
1988 Clevenger LA, Thompson CV, Cammarata RC, Tu KN. Reaction kinetics of nickel/silicon multilayer films Applied Physics Letters. 52: 795-797. DOI: 10.1063/1.99644  0.557
1988 Nava F, Weiss BZ, Ahn KY, Smith DA, Tu KN. Thermal stability and electrical conduction behavior of coevaporated WSi2±x thin films Journal of Applied Physics. 64: 354-364. DOI: 10.1063/1.341435  0.361
1988 Tu K, Chandrashekhar GV, Chou TC. Amorphous alloy formation by solid state reaction Thin Solid Films. 163: 43-48. DOI: 10.1016/0040-6090(88)90408-7  0.347
1988 Weiss BZ, Tu K, Smith DA. Amorphous Cr5Si3 thin films— morphology and kinetics of crystallization Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 19: 1991-2003. DOI: 10.1007/Bf02645203  0.316
1987 Cammarata RC, Thompson CV, Tu KN. NiSi2 precipitation in nickel-implanted silicon films Applied Physics Letters. 51: 1106-1108. DOI: 10.1063/1.99003  0.531
1987 Ottaviani G, Tu K, Psaras P, Nobili C. In situ resistivity measurement of cobalt silicide formation Journal of Applied Physics. 62: 2290-2294. DOI: 10.1063/1.339486  0.384
1987 Chou TC, Wong CY, Tu K. Enhanced grain growth of polycrystalline silicon at low temperature by dopant redistribution Journal of Applied Physics. 62: 2722-2726. DOI: 10.1063/1.339423  0.386
1987 Thompson RD, Takai H, Psaras PA, Tu K. Effect of a substrate on the phase transformations of amorphous TiSi2 thin films Journal of Applied Physics. 61: 540-544. DOI: 10.1063/1.338254  0.351
1987 Baglin JEE, Schrott AG, Thompson RD, Tu K, Segmüller A. Ion induced adhesion via interfacial compounds Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 782-786. DOI: 10.1016/S0168-583X(87)80157-X  0.334
1986 Aboelfotoh MO, Tu K. Schottky-barrier heights of Ti and TiSi2 on n-type and p-type Si(100). Physical Review B. 34: 2311-2318. PMID 9939920 DOI: 10.1103/Physrevb.34.2311  0.367
1986 Aboelfotoh MO, Tu K. Schottky-barrier height of a Ti-W alloy on n-type and p-type Si Physical Review B. 33: 6572-6578. PMID 9937977 DOI: 10.1103/Physrevb.33.6572  0.404
1986 Weiss BZ, Tu K, Smith DA. MICROSTRUCTURE AND RESISTIVITY OF Cr//7//5Si//2//5 THIN FILMS. Mrs Proceedings. 71: 333-338. DOI: 10.1557/Proc-71-333  0.333
1986 Cros A, Schrott AG, Thompson RD, Tu K. Influence of sputtering damage on chemical interactions at Cr‐SiO2 interfaces Applied Physics Letters. 48: 1547-1549. DOI: 10.1063/1.97026  0.358
1986 Newcomb SB, Tu KN. Transmission electron microscopic observations of amorphous NiZr alloy formation by solid-state reaction Applied Physics Letters. 48: 1436-1438. DOI: 10.1063/1.96881  0.38
1986 Cros A, Tu K. Stability of oxides grown on tantalum silicide surfaces Journal of Applied Physics. 60: 3323-3326. DOI: 10.1063/1.337699  0.331
1986 Nava F, Weiss BZ, Tu KN, Smith DA, Psaras PA. Morphology and kinetics of crystallization of amorphous V7 5Si25 thin-alloy films Journal of Applied Physics. 60: 2445-2452. DOI: 10.1063/1.337157  0.368
1986 Weiss BZ, Tu K, Smith DA. Effect of temperature on electrical and microstructural changes of coevaporated Ir‐Si alloy films Journal of Applied Physics. 59: 415-423. DOI: 10.1063/1.336646  0.392
1986 Babcock SE, Tu KN. Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration Journal of Applied Physics. 59: 1599-1605. DOI: 10.1063/1.336470  0.406
1986 Nava F, Psaras PA, Takai H, Tu KN. Phase transformations in alloy and bilayer thin films of vanadium and silicon Journal of Applied Physics. 59: 2429-2438. DOI: 10.1063/1.336345  0.379
1986 Valeri S, Pennino Ud, Ottaviani G, Sassaroli P, Tu K. AES and EELS study of ErSi2 and its behaviour under ion bombardment and oxygen exposure Solid State Communications. 60: 569-573. DOI: 10.1016/0038-1098(86)90272-3  0.34
1985 Tardy J, Tu K. Solute effect of Cu on interdiffusion in Al3Ti compound films. Physical Review B. 32: 2070-2081. PMID 9937271 DOI: 10.1103/Physrevb.32.2070  0.348
1985 Okumura T, Tu KN. Tungsten-platinum alloy Schottky barriers on n-type GaAs Applied Physics Letters. 47: 42-44. DOI: 10.1063/1.96439  0.33
1985 Psaras PA, Thompson RD, Tu K. Effect of dopant on reaction between polycrystalline silicon and thin-film rhodium Applied Physics Letters. 47: 250-252. DOI: 10.1063/1.96180  0.363
1985 Thompson RD, Tu K, Ottaviani G. Phase transformations of alloys on a reactive substrate: Interaction of binary alloys of transition and rare‐earth metals with silicon Journal of Applied Physics. 58: 705-710. DOI: 10.1063/1.336186  0.373
1985 Takai H, Psaras PA, Tu K. Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicides Journal of Applied Physics. 58: 4165-4171. DOI: 10.1063/1.335548  0.4
1985 Nava F, Tien T, Tu KN. Temperature dependence of semiconducting and structural properties of Cr-Si thin films Journal of Applied Physics. 57: 2018-2025. DOI: 10.1063/1.334389  0.398
1985 Cros A, Pollak RA, Tu K. Room-temperature oxidation of Ni, Pd, and Pt silicides Journal of Applied Physics. 57: 2253-2257. DOI: 10.1063/1.334371  0.339
1985 Bisi O, Chiao LW, Tu K. Electronic structure and properties of silicon-transition metal interfaces Surface Science. 1185-1190. DOI: 10.1016/0039-6028(85)90537-0  0.357
1984 Bisi O, Chiao LW, Tu K. Electronic structure and properties of Ni-Si(001) and Ni-Si(111) reactive interfaces Physical Review B. 30: 4664-4674. DOI: 10.1103/Physrevb.30.4664  0.377
1984 Wittmer M, Tu K. Low-temperature diffusion of dopant atoms in silicon during interfacial silicide formation Physical Review B. 29: 2010-2020. DOI: 10.1103/Physrevb.29.2010  0.354
1984 Psaras PA, Eizenberg M, Tu K. Sequential silicide formation between vanadium and amorphous silicon thin‐film bilayers Journal of Applied Physics. 56: 3439-3444. DOI: 10.1063/1.333910  0.347
1984 Ohdomari I, Akiyama M, Maeda T, Hori M, Takebayashi C, Ogura A, Chikyo T, Kimura I, Yoneda K, Tu K. Low‐temperature redistribution of As in Si during Ni silicide formation Journal of Applied Physics. 56: 2725-2728. DOI: 10.1063/1.333801  0.366
1984 Psaras PA, Thompson RD, Herd SR, Tu K. Structure and growth kinetics of RhSi on single crystal, polycrystalline, and amorphous silicon substrates Journal of Applied Physics. 55: 3536-3543. DOI: 10.1063/1.332943  0.369
1983 Tu K. Invited) Silicide Contact for Shallow Junction Devices Japanese Journal of Applied Physics. 22: 147-151. DOI: 10.7567/Jjaps.22S1.147  0.356
1983 Wittmer M, Tu K. Growth kinetics and diffusion mechanism in Pd 2 Si Physical Review B. 27: 1173-1179. DOI: 10.1103/Physrevb.27.1173  0.371
1983 Herd S, Tu K, Ahn KY. Formation of an amorphous Rh‐Si alloy by interfacial reaction between amorphous Si and crystalline Rh thin films Applied Physics Letters. 42: 597-599. DOI: 10.1063/1.94014  0.405
1983 Ottaviani G, Tu K, Thompson RD, Mayer JW, Lau SS. Interaction of Pd–Er alloys with silicon Journal of Applied Physics. 54: 4614-4622. DOI: 10.1063/1.332617  0.38
1983 Okumura T, Tu KN. Analysis of parallel Schottky contacts by differential internal photoemission spectroscopy Journal of Applied Physics. 54: 922-927. DOI: 10.1063/1.332055  0.333
1983 Tu K, Ottaviani G, Gösele U, Föll H. Intermetallic compound formation in thin-film and in bulk samples of the Ni-Si binary system Journal of Applied Physics. 54: 758-763. DOI: 10.1063/1.332034  0.347
1983 Tien T, Ottaviani G, Tu K. Temperature dependence of structural and electrical properties of Ta‐Si thin alloy films Journal of Applied Physics. 54: 7047-7057. DOI: 10.1063/1.331971  0.393
1983 Cros A, Pollak RA, Tu K. Interaction between chromium oxide and chromium silicide Journal of Applied Physics. 54: 258-259. DOI: 10.1063/1.331694  0.373
1983 Cros A, Pollak RA, Tu K. Oxidation behavior of PdSi compounds Thin Solid Films. 104: 221-225. DOI: 10.1016/0040-6090(83)90565-5  0.327
1983 Wittmer M, Ting CY, Tu K. Atomic motion of dopant during interfacial silicide formation Thin Solid Films. 104: 191-195. DOI: 10.1016/0040-6090(83)90561-8  0.343
1982 Ahn KY, Distefano TH, Herd SR, Mazzeo NJ, Tu K. High‐sensitivity silicide films for optical recording Journal of Applied Physics. 53: 6360-6364. DOI: 10.1063/1.331505  0.357
1982 Thompson RD, Tu K. Schottky barrier of nonuniform contacts to n‐type and p‐type silicon Journal of Applied Physics. 53: 4285-4288. DOI: 10.1063/1.331257  0.346
1982 Gösele U, Tu K, Thompson RD. A simple analysis of inert marker motion in a single compound layer for solid‐phase epitaxy and for binary diffusion couples Journal of Applied Physics. 53: 8759-8764. DOI: 10.1063/1.330477  0.342
1982 Eizenberg M, Thompson RD, Tu K. A study of vanadium as diffusion barrier between aluminum and gadolinium silicide contacts Journal of Applied Physics. 53: 6891-6897. DOI: 10.1063/1.330030  0.377
1982 Graczyk JF, Tu K, Tsaur BY, Mayer JW. Ion‐beam‐induced metastable Pt2Si3 phase. III. Structure and diffusion in amorphous Pt2Si3 Journal of Applied Physics. 53: 6772-6780. DOI: 10.1063/1.329999  0.367
1982 Ohdomari I, Suguro K, Akiyama M, Maeda T, Tu K, Kimura I, Yoneda K. Low temperature doping of arsenic atoms in silicon during Pd2Si formation Thin Solid Films. 89: 349-354. DOI: 10.1016/0040-6090(82)90307-8  0.34
1982 Thompson RD, Tu K. Comparison of the three classes (rare earth, refractory and near-noble) of silicide contacts Thin Solid Films. 93: 265-274. DOI: 10.1016/0040-6090(82)90131-6  0.348
1982 Chen LJ, Mayer JW, Tu K. Formation and structure of epitaxial NiSi2 and CoSi2 Thin Solid Films. 93: 135-141. DOI: 10.1016/0040-6090(82)90098-0  0.406
1981 Tu K. Shallow and parallel silicide contacts Journal of Vacuum Science and Technology. 19: 766-777. DOI: 10.1116/1.571147  0.374
1981 Ottaviani G, Tu K, Mayer JW. Barrier heights and silicide formation for Ni, Pd, and Pt on silicon Physical Review B. 24: 3354-3359. DOI: 10.1103/Physrevb.24.3354  0.382
1981 Thompson RD, Tsaur BY, Tu K. Contact reaction between Si and rare earth metals Applied Physics Letters. 38: 535-537. DOI: 10.1063/1.92442  0.39
1981 Ohdomari I, Tu K, Suguro K, Akiyama M, Kimura I, Yoneda K. Low-temperature redistribution of As in Si during Pd2Si formation Applied Physics Letters. 38: 1015-1017. DOI: 10.1063/1.92250  0.379
1981 Eizenberg M, Foell H, Tu K. Formation of shallow Schottky contacts to Si using Pt‐Si and Pd‐Si alloy films Journal of Applied Physics. 52: 861-868. DOI: 10.1063/1.328850  0.397
1981 Thompson R, Eizenberg M, Tu K. Schottky contacts of Gd‐Pt and Gd‐V alloys on n‐Si and p‐Si Journal of Applied Physics. 52: 6763-6768. DOI: 10.1063/1.328629  0.386
1981 Grimaldi MG, Wieluński L, Nicolet MA, Tu K. Germanide formation by thermal treatment of platinum films deposited on single-crystal Ge〈100〉 substrates Thin Solid Films. 81: 207-211. DOI: 10.1016/0040-6090(81)90483-1  0.375
1980 Ohdomari I, Tu K, Hammer W. Ion beam modification of silicide-silicon interfaces Radiation Effects and Defects in Solids. 49: 1-5. DOI: 10.1080/00337578008243057  0.318
1980 Eizenberg M, Föll H, Tu K. Shallow silicide contacts formed by using codeposited Pt2Si and Pt1.2Si films Applied Physics Letters. 37: 547-549. DOI: 10.1063/1.91981  0.378
1980 Eizenberg M, Ottaviani G, Tu K. Effect of substrate temperature on the formation of shallow silicide contacts on Si using Pd‐W and Pt‐W alloys Applied Physics Letters. 37: 87-89. DOI: 10.1063/1.91713  0.39
1980 Tsaur BY, Mayer JW, Graczyk JF, Tu K. Ion-beam-induced metastable Pt2Si3 phase. II. Kinetics and morphology Journal of Applied Physics. 51: 5334-5341. DOI: 10.1063/1.327447  0.364
1980 Tsaur BY, Mayer JW, Tu K. Ion‐beam induced metastable Pt2Si3 phase. I. Formation, structure, and properties Journal of Applied Physics. 51: 5326-5333. DOI: 10.1063/1.327446  0.362
1979 Ohdomari I, Kuan TS, Tu K. Microstructure and Schottky barrier height of iridium silicides formed on silicon Journal of Applied Physics. 50: 7020-7029. DOI: 10.1063/1.325860  0.395
1979 Olowolafe JO, Tu K, Angilello J. Contact reaction between Si and Pd‐W alloy films Journal of Applied Physics. 50: 6316-6320. DOI: 10.1063/1.325772  0.406
1979 Koester U, Campbell DR, Tu KN. CONTACT REACTIONS BETWEEN AMORPHOUS SILICON AND SINGLE-CRYSTAL METALLIC FILMS Thin Solid Films Pap Presented At the Int Conf On Metall Coat San Francisco Calif Apr 3-7 1978. 53: 129-134. DOI: 10.1016/0040-6090(78)90025-1  0.369
1978 Tu K, Howie A. Forbidden 200 diffraction spots in silicon Philosophical Magazine Part B. 37: 73-81. DOI: 10.1080/13642817808245308  0.342
1978 Ohdomari I, Tu K, D'Heurle FM, Kuan TS, Petersson S. Schottky‐barrier height of iridium silicide Applied Physics Letters. 33: 1028-1030. DOI: 10.1063/1.90256  0.392
1978 Chu WK, Tu K. Identification of diffusion species in V‐SiO2 reactions Applied Physics Letters. 33: 83-85. DOI: 10.1063/1.90154  0.334
1978 Lau SS, Mayer JW, Tu KN. Interactions in the Co/Si thin-film system. I. Kinetics Journal of Applied Physics. 49: 4005-4010. DOI: 10.1063/1.325359  0.4
1977 Köster U, Tu KN, Ho PS. Effect of substrate temperature on the microstructure of thin-film silicide Applied Physics Letters. 31: 634-636. DOI: 10.1063/1.89779  0.374
1977 Tu K. Kinetics of thin-film reactions between Pb and the AgPd alloy Journal of Applied Physics. 48: 3400-3404. DOI: 10.1063/1.324182  0.334
1977 Tu K. Analysis of marker motion in thin‐film silicide formation Journal of Applied Physics. 48: 3379-3382. DOI: 10.1063/1.324178  0.388
1976 Poate J, Brown W, Homer R, Augustyniak W, Mayer J, Tu K, van der Weg W. The sputtering of PtSi and NiSi Nuclear Instruments and Methods. 132: 345-349. DOI: 10.1016/0029-554X(76)90756-4  0.382
1975 Gupta D, Tu K, Asai KW. Diffusion in the amorphous phase of Pd-19-at.%-Si metallic alloy Physical Review Letters. 35: 796-799. DOI: 10.1103/Physrevlett.35.796  0.341
1975 Tu K. Selective growth of metal‐rich silicide of near‐noble metals Applied Physics Letters. 27: 221-224. DOI: 10.1063/1.88436  0.369
1975 Campbell DR, Tu KN, Schwenker RO. Diffusion of arsenic along dislocations in epitaxial silicon films Thin Solid Films. 25: 213-220. DOI: 10.1016/0040-6090(75)90257-6  0.364
1975 Chu WK, Lau SS, Mayer JW, Müller H, Tu K. Implanted noble gas atoms as diffusion markers in silicide formation Thin Solid Films. 25: 393-402. DOI: 10.1016/0040-6090(75)90057-7  0.372
1974 Tu K, Alessandrini EI, Chu WK, Krautle H, Mayer JW. Epitaxial Growth of Nickel Silicide NiSi2 on Silicon Japanese Journal of Applied Physics. 13: 669. DOI: 10.7567/Jjaps.2S1.669  0.432
1974 Tu K, Rosenberg R. Room temperature interaction in bimetallic thin film couples Japanese Journal of Applied Physics. 13: 633-636. DOI: 10.7567/Jjaps.2S1.633  0.339
1974 Mayer JW, Tu K. Analysis of thin-film structures with nuclear backscattering and x-ray diffraction Journal of Vacuum Science and Technology. 11: 86-93. DOI: 10.1116/1.1318668  0.33
1974 Chu WK, Kraütle H, Mayer JW, Müller H, Nicolet MA, Tu K. Identification of the dominant diffusing species in silicide formation Applied Physics Letters. 25: 454-457. DOI: 10.1063/1.1655546  0.318
1973 Ziegler JF, Mayer JW, Kircher CJ, Tu KN. Kinetics of the formation of hafnium silicides on silicon Journal of Applied Physics. 44: 3851-3857. DOI: 10.1063/1.1662861  0.443
1973 Tu KN, Ziegler JF, Kircher CJ. Formation of vanadium silicides by the interactions of v with bare and oxidized Si wafers Applied Physics Letters. 23: 493-495. DOI: 10.1063/1.1654972  0.371
1973 Kircher CJ, Mayer JW, Tu KN, Ziegler JF. Analysis of formation of hafnium silicide on silicon Applied Physics Letters. 22: 81-83. DOI: 10.1063/1.1654565  0.389
1973 Tu K. Interdiffusion and Reaction in Bimetallic Cu-Sn Thin Films Acta Metallurgica. 21: 347-354. DOI: 10.1016/0001-6160(73)90190-9  0.394
1972 Tu K, Ahn K, Suits J. Epitaxial growth of EuS films and magnetooptical properties Ieee Transactions On Magnetics. 8: 651-653. DOI: 10.1109/Tmag.1972.1067412  0.324
1972 Tu KN, Berry BS. X-ray study of interdiffusion in bimetallic CuSingle Bond signAu films Journal of Applied Physics. 43: 3283-3290. DOI: 10.1063/1.1661708  0.401
1970 Tu K, Turnbull D. Direct observation of twinning in tin lamellae Acta Metallurgica. 18: 915-929. DOI: 10.1016/0001-6160(70)90019-2  0.496
1967 Tu K, Turnbull D. Morphology of cellular precipitation of tin from lead-tin bicrystals Acta Metallurgica. 15: 369-376. DOI: 10.1016/0001-6160(67)90214-3  0.489
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