| Year |
Citation |
Score |
| 2020 |
Arsalan M, Liu J, Zaslavsky A, Cristoloveanu S, Wan J. Deep-Depletion Effect in SOI Substrates and its Application in Photodetectors With Tunable Responsivity and Detection Range Ieee Transactions On Electron Devices. 67: 3256-3262. DOI: 10.1109/Ted.2020.2998453 |
0.407 |
|
| 2020 |
Rezaei E, Donato M, Patterson WR, Zaslavsky A, Bahar RI. Fundamental Thermal Limits on Data Retention in Low-Voltage CMOS Latches and SRAM Ieee Transactions On Device and Materials Reliability. 20: 488-497. DOI: 10.1109/Tdmr.2020.2996627 |
0.345 |
|
| 2020 |
Liu J, Zhu K-, Zaslavsky A, Cristoloveanu S, Arsalan M, Wan J. Photodiode with low dark current built in silicon-on-insulator using electrostatic doping Solid-State Electronics. 168: 107733. DOI: 10.1016/J.Sse.2019.107733 |
0.402 |
|
| 2019 |
Kumar A, Laux SE, Stern F, Zaslavsky A, Hong JM, Smith TP. Effect of nonequilibrium deep donors in heterostructure modeling. Physical Review. B, Condensed Matter. 48: 4899-4902. PMID 10008987 DOI: 10.1103/Physrevb.48.4899 |
0.328 |
|
| 2019 |
Liu J, Cao XY, Lu BR, Chen YF, Zaslavsky A, Cristoloveanu S, Wan J. Dynamic Coupling Effect in Z 2 -FET and Its Application for Photodetection Ieee Journal of the Electron Devices Society. 7: 846-854. DOI: 10.1109/Jeds.2019.2918203 |
0.401 |
|
| 2019 |
Siontas S, Li D, Wang H, S AAVP, Zaslavsky A, Pacifici D. High-performance germanium quantum dot photodetectors in the visible and near infrared Materials Science in Semiconductor Processing. 92: 19-27. DOI: 10.1016/J.Mssp.2018.03.024 |
0.351 |
|
| 2018 |
Donato M, Bahar RI, Patterson WR, Zaslavsky A. A Sub-Threshold Noise Transient Simulator Based on Integrated Random Telegraph and Thermal Noise Modeling Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 37: 643-656. DOI: 10.1109/Tcad.2017.2717705 |
0.302 |
|
| 2018 |
Deng J, Shao J, Lu B, Chen Y, Zaslavsky A, Cristoloveanu S, Bawedin M, Wan J. Interface Coupled Photodetector (ICPD) With High Photoresponsivity Based on Silicon-on-Insulator Substrate (SOI) Ieee Journal of the Electron Devices Society. 6: 557-564. DOI: 10.1109/Jeds.2017.2788403 |
0.418 |
|
| 2018 |
Siontas S, Wang H, Li D, Zaslavsky A, Pacifici D. Broadband visible-to-telecom wavelength germanium quantum dot photodetectors Applied Physics Letters. 113: 181101. DOI: 10.1063/1.5052252 |
0.365 |
|
| 2018 |
Siontas S, Li D, Liu P, Aujla S, Zaslavsky A, Pacifici D. Low‐Temperature Operation of High‐Efficiency Germanium Quantum Dot Photodetectors in the Visible and Near Infrared Physica Status Solidi (a). 215: 1700453. DOI: 10.1002/Pssa.201700453 |
0.306 |
|
| 2017 |
Song Y, Katsman A, Butcher AL, Paine DC, Zaslavsky A. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors Solid-State Electronics. 136: 43-50. DOI: 10.1016/J.Sse.2017.06.023 |
0.393 |
|
| 2017 |
Umana-Membreno GA, Song Y, Akhavan ND, Antoszewski J, Paine DC, Zaslavsky A, Faraone L. Electronic transport parameters of indium zinc oxide thin films after Al2O3/HfO2 top-dielectric formation annealing Microelectronic Engineering. 178: 164-167. DOI: 10.1016/J.Mee.2017.05.040 |
0.34 |
|
| 2016 |
Cristoloveanu S, Wan J, Zaslavsky A. A review of sharp-switching devices for ultra-low power applications Ieee Journal of the Electron Devices Society. 4: 215-226. DOI: 10.1109/Jeds.2016.2545978 |
0.429 |
|
| 2016 |
Siontas S, Liu P, Zaslavsky A, Pacifici D. Noise performance of high-efficiency germanium quantum dot photodetectors Applied Physics Letters. 109: 53508. DOI: 10.1063/1.4960532 |
0.363 |
|
| 2016 |
Liu P, Longo P, Zaslavsky A, Pacifici D. Optical bandgap of single- and multi-layered amorphous germanium ultra-thin films Journal of Applied Physics. 119. DOI: 10.1063/1.4939296 |
0.301 |
|
| 2015 |
Zhang P, Liu P, Siontas S, Zaslavsky A, Pacifici D, Ha JY, Krylyuk S, Davydov AV. Dense nanoimprinted silicon nanowire arrays with passivated axial p-i-n junctions for photovoltaic applications Journal of Applied Physics. 117. DOI: 10.1063/1.4916535 |
0.377 |
|
| 2015 |
Song Y, Zaslavsky A, Paine DC. High performance top-gated indium-zinc-oxide thin film transistors with in-situ formed HfO2 gate insulator Thin Solid Films. DOI: 10.1016/J.Tsf.2016.04.017 |
0.411 |
|
| 2014 |
Revelant A, Villalon A, Wu Y, Zaslavsky A, Le Royer C, Iwai H, Cristoloveanu S. Electron-hole bilayer TFET: Experiments and Comments Ieee Transactions On Electron Devices. 61: 2674-2681. DOI: 10.1109/Ted.2014.2329551 |
0.447 |
|
| 2014 |
Song Y, Xu R, He J, Siontas S, Zaslavsky A, Paine DC. Top-gated indium-zinc-oxide thin-film transistors with in situ Al2O3/HfO2 gate oxide Ieee Electron Device Letters. 35: 1251-1253. DOI: 10.1109/Led.2014.2360922 |
0.408 |
|
| 2014 |
Zhang P, Le ST, Hou X, Zaslavsky A, Perea DE, Dayeh SA, Picraux ST. Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor Applied Physics Letters. 105. DOI: 10.1063/1.4892950 |
0.442 |
|
| 2014 |
Solaro Y, Wan J, Fonteneau P, Fenouillet-Beranger C, Le Royer C, Zaslavsky A, Ferrari P, Cristoloveanu S. Z2-FET: A promising FDSOI device for ESD protection Solid-State Electronics. 97: 23-29. DOI: 10.1016/J.Sse.2014.04.032 |
0.409 |
|
| 2013 |
Cristoloveanu S, Wan J, Le Royer C, Zaslavsky A. Innovative sharp-switching devices Ecs Transactions. 54: 65-75. DOI: 10.1149/05401.0065ecst |
0.325 |
|
| 2013 |
Zaslavsky A, Wan J, Le ST, Jannaty P, Cristoloveanu S, Le Royer C, Perea DE, Dayeh SA, Picraux ST. Sharp-switching high-current tunneling devices Ecs Transactions. 53: 63-74. DOI: 10.1149/05305.0063ecst |
0.353 |
|
| 2013 |
Cristoloveanu S, Wan J, Le Royer C, Zaslavsky A. Sharp-switching SOI devices Ecs Transactions. 53: 3-13. DOI: 10.1149/05305.0003ecst |
0.323 |
|
| 2013 |
Wan J, Zaslavsky A, Le Royer C, Cristoloveanu S. Novel bipolar-enhanced tunneling FET with simulated high on-current Ieee Electron Device Letters. 34: 24-26. DOI: 10.1109/Led.2012.2228159 |
0.435 |
|
| 2013 |
Cosentino S, Mirabella S, Liu P, Le ST, Miritello M, Lee S, Crupi I, Nicotra G, Spinella C, Paine D, Terrasi A, Zaslavsky A, Pacifici D. Role of Ge nanoclusters in the performance of photodetectors compatible with Si technology Thin Solid Films. 548: 551-555. DOI: 10.1016/J.Tsf.2013.09.028 |
0.373 |
|
| 2013 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. A systematic study of the sharp-switching Z2-FET device: From mechanism to modeling and compact memory applications Solid-State Electronics. 90: 2-11. DOI: 10.1016/J.Sse.2013.02.060 |
0.42 |
|
| 2013 |
Wan J, Le Royer C, Zaslavsky A, Cristoloveanu S. Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage Solid-State Electronics. 84: 147-154. DOI: 10.1016/J.Sse.2013.02.010 |
0.348 |
|
| 2012 |
Le ST, Jannaty P, Luo X, Zaslavsky A, Perea DE, Dayeh SA, Picraux ST. Axial SiGe heteronanowire tunneling field-effect transistors. Nano Letters. 12: 5850-5. PMID 23113718 DOI: 10.1021/Nl3032058 |
0.436 |
|
| 2012 |
Jannaty P, Sabou FC, Le ST, Donato M, Bahar RI, Patterson W, Mundy J, Zaslavsky A. Shot-noise-induced failure in nanoscale flip-flops part II: Failure rates in 10-nm ultimate CMOS Ieee Transactions On Electron Devices. 59: 807-812. DOI: 10.1109/Ted.2011.2180604 |
0.352 |
|
| 2012 |
Jannaty P, Sabou FC, Le ST, Donato M, Donato RI, Donato W, Mundy J, Zaslavsky A. Shot-noise-induced failure in nanoscale flip-flops-Part I: Numerical framework Ieee Transactions On Electron Devices. 59: 800-806. DOI: 10.1109/Ted.2011.2177983 |
0.311 |
|
| 2012 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration Ieee Electron Device Letters. 33: 179-181. DOI: 10.1109/Led.2011.2176908 |
0.389 |
|
| 2012 |
Liu P, Cosentino S, Le ST, Lee S, Paine D, Zaslavsky A, Pacifici D, Mirabella S, Miritello M, Crupi I, Terrasi A. Transient photoresponse and incident power dependence of high-efficiency germanium quantum dot photodetectors Journal of Applied Physics. 112. DOI: 10.1063/1.4759252 |
0.335 |
|
| 2012 |
Wan J, Cristoloveanu S, Le Royer C, Zaslavsky A. A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection Solid-State Electronics. 76: 109-111. DOI: 10.1016/J.Sse.2012.05.061 |
0.424 |
|
| 2011 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. A tunneling field effect transistor model combining interband tunneling with channel transport Journal of Applied Physics. 110: 104503. DOI: 10.1063/1.3658871 |
0.407 |
|
| 2011 |
Cosentino S, Liu P, Le ST, Lee S, Paine D, Zaslavsky A, Pacifici D, Mirabella S, Miritello M, Crupi I, Terrasi A. High-efficiency silicon-compatible photodetectors based on Ge quantum dots Applied Physics Letters. 98. DOI: 10.1063/1.3597360 |
0.397 |
|
| 2011 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. Tunneling FETs on SOI: Suppression of ambipolar leakage, low-frequency noise behavior, and modeling Solid-State Electronics. 65: 226-233. DOI: 10.1016/J.Sse.2011.06.012 |
0.43 |
|
| 2011 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. Gate-induced drain leakage in FD-SOI devices: What the TFET teaches us about the MOSFET Microelectronic Engineering. 88: 1301-1304. DOI: 10.1016/J.Mee.2011.03.092 |
0.462 |
|
| 2010 |
Goodnick S, Korkin A, Krstic P, Mascher P, Preston J, Zaslavsky A. Semiconductor nanotechnology: novel materials and devices for electronics, photonics and renewable energy applications. Nanotechnology. 21: 130201. PMID 20234072 DOI: 10.1088/0957-4484/21/13/130201 |
0.325 |
|
| 2010 |
Jannaty P, Sabou FC, Gadlage M, Bahar RI, Mundy J, Patterson W, Reed RA, Weller RA, Schrimpf RD, Zaslavsky A. Two-dimensional Markov chain analysis of radiation-induced soft errors in subthreshold nanoscale CMOS devices Ieee Transactions On Nuclear Science. 57: 3768-3774. DOI: 10.1109/Tns.2010.2068561 |
0.315 |
|
| 2010 |
Wan J, Royer CL, Zaslavsky A, Cristoloveanu S. Low-frequency noise behavior of tunneling field effect transistors Applied Physics Letters. 97: 243503. DOI: 10.1063/1.3526722 |
0.338 |
|
| 2010 |
Le ST, Jannaty P, Zaslavsky A, Dayeh SA, Picraux ST. Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires Applied Physics Letters. 96: 262102. DOI: 10.1063/1.3457862 |
0.372 |
|
| 2009 |
Sabou FC, Kazazis D, Bahar RI, Mundy J, R. Patterson W, Zaslavsky A. Markov chain analysis of thermally induced soft errors in subthreshold nanoscale CMOS circuits Ieee Transactions On Device and Materials Reliability. 9: 494-504. DOI: 10.1109/Tdmr.2009.2026571 |
0.657 |
|
| 2009 |
Kazazis D, Guha S, Bojarczuk NA, Zaslavsky A, Kim HC. Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2 /Si films Applied Physics Letters. 95. DOI: 10.1063/1.3196314 |
0.645 |
|
| 2009 |
Kazazis D, Jannaty P, Zaslavsky A, Le Royer C, Tabone C, Clavelier L, Cristoloveanu S. Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator Applied Physics Letters. 94. DOI: 10.1063/1.3168646 |
0.697 |
|
| 2008 |
Goldman VJ, Liu J, Zaslavsky A. Electron tunneling spectroscopy of a quantum antidot in the integer quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.115328 |
0.347 |
|
| 2007 |
Zaslavsky A, Soliveres S, Royer CL, Cristoloveanu S, Clavelier L, Deleonibus S. Negative transconductance in double-gate germanium-on-insulator field effect transistors Applied Physics Letters. 91: 183511. DOI: 10.1063/1.2802074 |
0.356 |
|
| 2007 |
Luryi S, Zaslavsky A. Nonclassical devices in SOI: Genuine or copyright from III-V Solid-State Electronics. 51: 212-218. DOI: 10.1016/J.Sse.2007.01.008 |
0.437 |
|
| 2007 |
Nepal K, Bahar RI, Mundy J, Patterson WR, Zaslavsky A. Designing nanoscale logic circuits based on Markov random fields Journal of Electronic Testing: Theory and Applications (Jetta). 23: 255-266. DOI: 10.1007/S10836-006-0553-9 |
0.364 |
|
| 2006 |
Luryi S, Zaslavsky A. On the possibility of an intersubband laser in silicon-on-insulator International Journal of High Speed Electronics and Systems. 16: 411-420. DOI: 10.1142/S0129156406003746 |
0.412 |
|
| 2006 |
Nepal K, Bahar RI, Mundy J, Patterson WR, Zaslavsky A. MRF reinforcer: A probabilistic element for space redundancy in nanoscale circuits Ieee Micro. 26: 19-27. DOI: 10.1109/Mm.2006.96 |
0.332 |
|
| 2005 |
Ohata A, Pretet J, Cristoloveanu S, Zaslavsky A. Correct biasing rules for virtual DG mode operation in SOI-MOSFETs Ieee Transactions On Electron Devices. 52: 124-125. DOI: 10.1109/Ted.2004.841273 |
0.331 |
|
| 2005 |
Goldman VJ, Liu J, Zaslavsky A. Fractional statistics of Laughlin quasiparticles in quantum antidots Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.153303 |
0.305 |
|
| 2005 |
Wang DP, Perkins BR, Yin AJ, Zaslavsky A, Xu JM, Beresford R, Snider GL. Carbon nanotube gated lateral resonant tunneling field-effect transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2089177 |
0.401 |
|
| 2005 |
Perkins BR, Wang DP, Soltman D, Yin AJ, Xu JM, Zaslavsky A. Differential current amplification in three-terminal Y-junction carbon nanotube devices Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2048812 |
0.366 |
|
| 2005 |
Preisler EJ, Guha S, Perkins BR, Kazazis D, Zaslavsky A. Ultrathin epitaxial germanium on crystalline oxide metal-oxide- semiconductor-field-effect transistors Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1941451 |
0.684 |
|
| 2004 |
Aydin C, Zaslavsky A, Luryi S, Cristoloveanu S, Mariolle D, Fraboulet D, Deleonibus S. Lateral interband tunneling transistor in silicon-on-insulator Applied Physics Letters. 84: 1780-1782. DOI: 10.1063/1.1668321 |
0.457 |
|
| 2004 |
Luryi S, Zaslavsky A. Blue sky in SOI: New opportunities for quantum and hot-electron devices Solid-State Electronics. 48: 877-885. DOI: 10.1016/J.Sse.2003.12.031 |
0.453 |
|
| 2003 |
Zaslavsky A, Aydin C, Luryi S, Cristoloveanu S, Mariolle D, Fraboulet D, Deleonibus S. Ultrathin silicon-on-insulator vertical tunneling transistor Applied Physics Letters. 83: 1653-1655. DOI: 10.1063/1.1600832 |
0.435 |
|
| 2002 |
Liu J, Zaslavsky A, Freund LB. Strain-induced quantum ring hole states in a gated vertical quantum dot. Physical Review Letters. 89: 096804. PMID 12190427 DOI: 10.1103/Physrevlett.89.096804 |
0.346 |
|
| 2002 |
Liu J, Zaslavsky A, Freund LB. Publisher's Note: Strain-Induced Quantum Ring Hole States in a Gated Vertical Quantum Dot [ Phys. Rev. Lett. 89 , 096804 (2002) ] Physical Review Letters. 89: 119901. DOI: 10.1103/Physrevlett.89.119901 |
0.32 |
|
| 2002 |
Liu J, Zaslavsky A, Perkins BR, Aydin C, Freund LB. Single-hole tunneling into a strain-induced SiGe quantum ring Physical Review B. 66: 161304. DOI: 10.1103/Physrevb.66.161304 |
0.357 |
|
| 2001 |
Karakurt I, Goldman VJ, Liu J, Zaslavsky A. Absence of compressible edge channel rings in quantum antidots. Physical Review Letters. 87: 146801. PMID 11580667 DOI: 10.1103/Physrevlett.87.146801 |
0.342 |
|
| 2001 |
Goldman VJ, Karakurt I, Liu J, Zaslavsky A. Invariance of charge of Laughlin quasiparticles Physical Review B - Condensed Matter and Materials Physics. 64: 853191-853195. DOI: 10.1103/Physrevb.64.085319 |
0.307 |
|
| 2001 |
Kholod AN, Liniger M, Zaslavsky A, d’Avitaya FA. Cascaded resonant tunneling diode quantizer for analog-to-digital flash conversion Applied Physics Letters. 79: 129-131. DOI: 10.1063/1.1377622 |
0.379 |
|
| 2001 |
Allibert F, Ernst T, Pretet J, Hefyene N, Perret C, Zaslavsky A, Cristoloveanu S. From SOI materials to innovative devices Solid-State Electronics. 45: 559-566. DOI: 10.1016/S0038-1101(01)00074-0 |
0.379 |
|
| 2000 |
Liu J, Zaslavsky A, Akyüz CD, Perkins BR, Freund LB. Magnetotunneling spectroscopic probe of quantization due to inhomogeneous strain in a Si/SiGe vertical quantum dot Physical Review B. 62: R7731-R7734. DOI: 10.1103/Physrevb.62.R7731 |
0.339 |
|
| 2000 |
Zaslavsky A, Mastrapasqua M, King CA, Johnson RW, Pillarisetty R, Liu J, Luryi S. VLSI-COMPATIBLE PROCESSING AND LOW-VOLTAGE OPERATION OF MULTIEMITTER Si/SiGe HETEROJUNCTION BIPOLAR TRANSISTORS International Journal of High Speed Electronics and Systems. 10: 75-81. DOI: 10.1016/S0129-1564(00)00010-6 |
0.438 |
|
| 1999 |
Akyüz CD, Johnson HT, Zaslavsky A, Freund LB, Syphers DA. Inhomogeneous strain relaxation in triple-barrier p-Si/SiGe nanostructures Physical Review B - Condensed Matter and Materials Physics. 60: 16597-16602. DOI: 10.1103/Physrevb.60.16597 |
0.351 |
|
| 1999 |
Kholod AN, Borisenko VE, Zaslavsky A, D'avitaya FA. Current oscillations in semiconductor-insulator multiple quantum wells Physical Review B. 60: 15975-15979. DOI: 10.1103/Physrevb.60.15975 |
0.346 |
|
| 1998 |
Johnson HT, Freund LB, Akyüz CD, Zaslavsky A. Finite element analysis of strain effects on electronic and transport properties in quantum dots and wires Journal of Applied Physics. 84: 3714-3725. DOI: 10.1063/1.368549 |
0.319 |
|
| 1998 |
Akyüz CD, Zaslavsky A, Freund LB, Syphers DA, Sedgwick TO. Inhomogeneous strain in individual quantum dots probed by transport measurements Applied Physics Letters. 72: 1739-1741. DOI: 10.1063/1.121169 |
0.342 |
|
| 1998 |
Gassot P, Gennser U, Symons DM, Zaslavsky A, Grützmacher DA, Portal JC. Stress and pressure effects on a Si/SiGe double-barrier structure studied by magnetotunnelling spectroscopy Physica E-Low-Dimensional Systems & Nanostructures. 2: 758-762. DOI: 10.1016/S1386-9477(98)00155-6 |
0.342 |
|
| 1997 |
Zaslavsky A, Luryi S, King CA, Johnson RW. Multi-emitter Si/GexSi1-x heterojunction bipolar transistor with no base contact and enhanced logic functionality Ieee Electron Device Letters. 18: 453-455. DOI: 10.1109/55.622528 |
0.41 |
|
| 1996 |
Gennser U, Zaslavsky A, Grützmacher DA, Gassot P, Portal JC. Uniaxial stress effects on a Si/Si1−xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy Applied Surface Science. 102: 242-246. DOI: 10.1016/0169-4332(96)00056-6 |
0.38 |
|
| 1995 |
Zaslavsky A, Milkove KR, Lee YH, Ferland B, Sedgwick TO. Strain relaxation in silicon‐germanium microstructures observed by resonant tunneling spectroscopy Applied Physics Letters. 67: 3921-3923. DOI: 10.1063/1.115318 |
0.318 |
|
| 1995 |
Kurdak Ç, Zaslavsky A, Tsui DC, Santos MB, Shayegan M. High field transport in an edge overgrown lateral superlattice Applied Physics Letters. 66: 323-325. DOI: 10.1063/1.113532 |
0.32 |
|
| 1995 |
Grützmacher D, Sedgwick T, Scandella L, Zaslavsky A, Powell A, lyer S. SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition Vacuum. 46: 947-950. DOI: 10.1016/0042-207X(95)00079-8 |
0.359 |
|
| 1994 |
Zaslavsky A, Milkove KR, Lee YH, Chan KK, Stern F, Grützmacher DA, Rishton SA, Stanis C, Sedgwick TO. Fabrication of three-terminal resonant tunneling devices in silicon-based material Applied Physics Letters. 64: 1699-1701. DOI: 10.1063/1.111838 |
0.453 |
|
| 1994 |
Zaslavsky A, Grützmacher D, Lin S, Smith T, Sedgwick T. Valence band Landau level mixing and anisotropy in Si1−xGex investigated by resonant magnetotunneling Surface Science. 305: 307-311. DOI: 10.1016/0039-6028(94)90906-7 |
0.367 |
|
| 1993 |
Zaslavsky A, Smith TP, Grützmacher DA, Lin SY, Sedgwick TO, Syphers DA. In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells. Physical Review. B, Condensed Matter. 48: 15112-15115. PMID 10008043 DOI: 10.1103/Physrevb.48.15112 |
0.355 |
|
| 1993 |
Zaslavsky A, Grützmacher DA, Lin SY, Smith TP, Kiehl RA, Sedgwick TO. Observation of valence-band Landau-level mixing by resonant magnetotunneling. Physical Review B. 47: 16036-16039. PMID 10006020 DOI: 10.1103/Physrevb.47.16036 |
0.35 |
|
| 1993 |
Grützmacher DA, Sedgwick TO, Northrop GA, Zaslavsky A, Powell AR, Kesan VP. Very narrow SiGe/Si quantum wells deposited by low‐temperature atmospheric pressure chemical vapor deposition Journal of Vacuum Science & Technology B. 11: 1083-1088. DOI: 10.1116/1.587012 |
0.398 |
|
| 1993 |
Sedgwick TO, Grützmacher DA, Zaslavsky A, Kesan VP. Selective SiGe and heavily As doped Si deposited at low temperature by atmospheric pressure chemical vapor deposition Journal of Vacuum Science & Technology B. 11: 1124-1128. DOI: 10.1116/1.586825 |
0.347 |
|
| 1993 |
Grützmacher DA, Sedgwick TO, Zaslavsky A, Powell AR, Kiehl RA, Ziegler W, Cotte J. Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition Journal of Electronic Materials. 22: 303-308. DOI: 10.1007/Bf02661381 |
0.4 |
|
| 1992 |
Zaslavsky A, Grützmacher DA, Lee YH, Ziegler W, Sedgwick TO. Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition Applied Physics Letters. 61: 2872-2874. DOI: 10.1063/1.108061 |
0.378 |
|
| 1991 |
Zaslavsky A, Tsui DC, Santos M, Shayegan M. Resonant tunneling of two‐dimensional electrons into one‐dimensional subbands of a quantum wire Applied Physics Letters. 58: 1440-1442. DOI: 10.1063/1.105192 |
0.35 |
|
| 1990 |
Li YP, Zaslavsky A, Tsui DC, Santos M, Shayegan M. Noise characteristics of double-barrier resonant-tunneling structures below 10 kHz. Physical Review. B, Condensed Matter. 41: 8388-8391. PMID 9993163 DOI: 10.1103/Physrevb.41.8388 |
0.302 |
|
| 1988 |
Zaslavsky A, Goldman VJ, Tsui DC, Cunningham JE. Resonant tunneling and intrinsic bistability in asymmetric double-barrier heterostructures Applied Physics Letters. 53: 1408-1410. DOI: 10.1063/1.99956 |
0.413 |
|
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