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Chuan Xu, Ph.D. - Publications

Affiliations: 
2012 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Computer Engineering/ Electronics & Photonics
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22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Xu C, Kolluri SK, Endo K, Banerjee K. Correction to “Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability” Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 39: 277-277. DOI: 10.1109/Tcad.2019.2944583  0.519
2013 Xu C, Banerjee K. Physical modeling of the capacitance and capacitive coupling noise of through-oxide vias in FDSOI-based ultra-high density 3-D ICs Ieee Transactions On Electron Devices. 60: 123-131. DOI: 10.1109/Ted.2012.2227966  0.575
2013 Xu C, Kolluri SK, Endo K, Banerjee K. Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 32: 1045-1058. DOI: 10.1109/Tcad.2013.2248194  0.57
2012 Xu C, Suaya R, Banerjee K. Some clarifications on "compact modeling and analysis of through-si-via induced electrical noise coupling in three-dimensional ICs" Ieee Transactions On Electron Devices. 59: 2861-2862. DOI: 10.1109/Ted.2012.2209431  0.523
2012 Khatami Y, Li H, Xu C, Banerjee K. Metal-to-multilayer-graphene contact part II: Analysis of contact resistance Ieee Transactions On Electron Devices. 59: 2453-2460. DOI: 10.1109/Ted.2012.2205257  0.731
2012 Khatami Y, Li H, Xu C, Banerjee K. Metal-to-multilayer-graphene contact part I: Contact resistance modeling Ieee Transactions On Electron Devices. 59: 2444-2452. DOI: 10.1109/Ted.2012.2205256  0.747
2012 Xu C, Srivastava N, Suaya R, Banerjee K. Fast high-frequency impedance extraction of horizontal interconnects and inductors in 3-D ICs with multiple substrates Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 31: 1698-1710. DOI: 10.1109/Tcad.2012.2203598  0.669
2011 Xu C, Suaya R, Banerjee K. Compact modeling and analysis of through-Si-Via-induced electrical noise coupling in three-dimensional ICs Ieee Transactions On Electron Devices. 58: 4024-4034. DOI: 10.1109/Ted.2011.2166156  0.551
2011 Xu C, Kourkoulos V, Suaya R, Banerjee K. A fully analytical model for the series impedance of through-silicon vias with consideration of substrate effects and coupling with horizontal interconnects Ieee Transactions On Electron Devices. 58: 3529-3540. DOI: 10.1109/Ted.2011.2162846  0.584
2011 Sarkar D, Xu C, Li H, Banerjee K. High-frequency behavior of graphene-based interconnect-sPart II: Impedance analysis and implications for inductor design Ieee Transactions On Electron Devices. 58: 853-859. DOI: 10.1109/Ted.2010.2102035  0.586
2011 Sarkar D, Xu C, Li H, Banerjee K. High-frequency behavior of graphene-based interconnects-Part I: Impedance modeling Ieee Transactions On Electron Devices. 58: 843-852. DOI: 10.1109/Ted.2010.2102031  0.588
2011 Rasouli SH, Xu C, Singh N, Banerjee K. A physical model for work-function variation in ultra-short channel metal-gate mosfets Ieee Electron Device Letters. 32: 1507-1509. DOI: 10.1109/Led.2011.2166531  0.712
2011 Liu W, Li H, Xu C, Khatami Y, Banerjee K. Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition Carbon. 49: 4122-4130. DOI: 10.1016/J.Carbon.2011.05.047  0.714
2010 Xu C, Li H, Suaya R, Banerjee K. Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs Ieee Transactions On Electron Devices. 57: 3405-3417. DOI: 10.1109/Ted.2010.2076382  0.606
2010 Srivastava N, Xu C, Suaya R, Banerjee K. Corrections to “Analytical Expressions for High-Frequency VLSI Interconnect Impedance Extraction in the Presence of a Multilayer Conductive Substrate” [Jul 09 1047-1060 Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 29: 849-849. DOI: 10.1109/Tcad.2010.2047753  0.63
2010 Jiang L, Xu C, Rubin BJ, Weger AJ, Deutsch A, Smith H, Caron A, Banerjee K. A thermal simulation process based on electrical modeling for complex interconnect, packaging, and 3DI structures Ieee Transactions On Advanced Packaging. 33: 777-786. DOI: 10.1109/Tadvp.2010.2090348  0.558
2010 Li H, Xu C, Banerjee K. Carbon nanomaterials: The ideal interconnect technology for next-generation ICs Ieee Design and Test of Computers. 27: 20-31. DOI: 10.1109/Mdt.2010.55  0.556
2009 Li H, Xu C, Srivastava N, Banerjee K. Carbon Nanomaterials for Next-Generation Interconnects and Passives: Physics, Status, and Prospects Ieee Transactions On Electron Devices. 56: 1799-1821. DOI: 10.7567/Ssdm.2009.D-8-1  0.693
2009 Xu C, Li H, Banerjee K. Modeling, analysis, and design of graphene nano-ribbon interconnects Ieee Transactions On Electron Devices. 56: 1567-1578. DOI: 10.1109/Ted.2009.2024254  0.602
2009 Xu C, Jiang L, Kolluri SK, Rubin BJ, Deutsch A, Smith H, Banerjee K. Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies Ieee/Acm International Conference On Computer-Aided Design, Digest of Technical Papers, Iccad. 658-665.  0.517
2007 Xu C, Wang J, Chen H, Xu F, Dong Z, Hao Y, Wen PC. The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure Ieee Electron Device Letters. 28: 942-944. DOI: 10.1109/Led.2007.906932  0.304
2006 Xu C, Wang J, Wang M, Jin H, Hao Y, Wen CP. Reeves's circular transmission line model and its scope of application to extract specific contact resistance Solid-State Electronics. 50: 843-847. DOI: 10.1016/J.Sse.2006.03.007  0.338
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