Ching-Huang Lu, Ph.D. - Publications
Affiliations: | 2007 | Stanford University, Palo Alto, CA |
Area:
Materials Science Engineering, Electronics and Electrical EngineeringYear | Citation | Score | |||
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2015 | Wang C, Lee WY, Kong D, Pfattner R, Schweicher G, Nakajima R, Lu C, Mei J, Lee TH, Wu HC, Lopez J, Diao Y, Gu X, Himmelberger S, Niu W, et al. Significance of the double-layer capacitor effect in polar rubbery dielectrics and exceptionally stable low-voltage high transconductance organic transistors. Scientific Reports. 5: 17849. PMID 26658331 DOI: 10.1038/Srep17849 | 0.393 | |||
2010 | Birringer RP, Lu CH, Deal M, Nishi Y, Dauskardt RH. Bilayer metal gate electrodes with tunable work function: Adhesion and interface characterization Journal of Applied Physics. 108. DOI: 10.1063/1.3466957 | 0.476 | |||
2010 | Lu CH, Wong GMT, Birringer R, Dauskardt R, Deal MD, Clemens BM, Nishi Y. Bilayer metal gate electrodes with tunable work function: Mechanism and proposed model Journal of Applied Physics. 107. DOI: 10.1063/1.3326237 | 0.492 | |||
2005 | Lu CH, Wong GMT, Deal MD, Tsai W, Majhi P, Chui CO, Visokay MR, Chambers JJ, Colombo L, Clemens BM, Nishi Y. Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO2 and HfO2 Ieee Electron Device Letters. 26: 445-447. DOI: 10.1109/Led.2005.851232 | 0.502 | |||
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