☰

Davood Shahrjerdi, Ph.D. - Publications

Affiliations: 
2008 Electrical Engineering University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Cuniberto E, Alharbi A, Huang Z, Wu T, Kiani R, Shahrjerdi D. Anomalous sensitivity enhancement of nano-graphitic electrochemical micro-sensors with reducing the operating voltage. Biosensors & Bioelectronics. 177: 112966. PMID 33450612 DOI: 10.1016/j.bios.2021.112966  0.524
2020 You KD, Cuniberto E, Hsu SC, Wu B, Huang Z, Pei X, Shahrjerdi D. An Electrochemical Biochip for Measuring Low Concentrations of Analytes with Adjustable Temporal Resolutions. Ieee Transactions On Biomedical Circuits and Systems. PMID 32746358 DOI: 10.1109/Tbcas.2020.3009303  0.309
2020 Zheng X, Calò A, Cao T, Liu X, Huang Z, Das PM, Drndic M, Albisetti E, Lavini F, Li TD, Narang V, King WP, Harrold JW, Vittadello M, Aruta C, ... Shahrjerdi D, et al. Spatial defects nanoengineering for bipolar conductivity in MoS. Nature Communications. 11: 3463. PMID 32651374 DOI: 10.1038/S41467-020-17241-1  0.329
2020 Huang Z, Alharbi A, Mayer W, Cuniberto E, Taniguchi T, Watanabe K, Shabani J, Shahrjerdi D. Versatile construction of van der Waals heterostructures using a dual-function polymeric film. Nature Communications. 11: 3029. PMID 32541673 DOI: 10.1038/S41467-020-16817-1  0.403
2020 Cuniberto E, Alharbi A, Wu T, Huang Z, Sardashti K, You KD, Kisslinger K, Taniguchi T, Watanabe K, Kiani R, Shahrjerdi D. Nano-engineering the material structure of preferentially oriented nano-graphitic carbon for making high-performance electrochemical micro-sensors. Scientific Reports. 10: 9444. PMID 32523076 DOI: 10.1038/S41598-020-66408-9  0.596
2019 Alharbi A, Huang Z, Taniguchi T, Watanabe K, Shahrjerdi D. Effect of Substrate Coupling on the Performance and Variability of Monolayer MoS2 Transistors Ieee Electron Device Letters. 40: 135-138. DOI: 10.1109/Led.2018.2883808  0.38
2019 Wu T, Alharbi A, Kiani R, Shahrjerdi D. Graphene Electrodes: Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors (Adv. Mater. 6/2019) Advanced Materials. 31: 1970037. DOI: 10.1002/Adma.201970037  0.558
2018 Wu T, Alharbi A, Kiani R, Shahrjerdi D. Quantitative Principles for Precise Engineering of Sensitivity in Graphene Electrochemical Sensors. Advanced Materials (Deerfield Beach, Fla.). e1805752. PMID 30548684 DOI: 10.1002/Adma.201805752  0.591
2018 Alharbi A, Shahrjerdi D. Analyzing the Effect of High-k Dielectric-Mediated Doping on Contact Resistance in Top-Gated Monolayer MoS2 Transistors Ieee Transactions On Electron Devices. 65: 4084-4092. DOI: 10.1109/Ted.2018.2866772  0.393
2017 Nasri B, Wu T, Alharbi A, You KD, Gupta M, Sebastian SP, Kiani R, Shahrjerdi D. Hybrid CMOS-Graphene Sensor Array for Subsecond Dopamine Detection. Ieee Transactions On Biomedical Circuits and Systems. 11: 1192-1203. PMID 29293417 DOI: 10.1109/Tbcas.2017.2778048  0.603
2017 Alharbi A, Armstrong D, Alharbi S, Shahrjerdi D. Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2. Acs Nano. PMID 29144734 DOI: 10.1021/Acsnano.7B07568  0.365
2017 Wu T, Alharbi A, You KD, Kisslinger K, Stach EA, Shahrjerdi D. Experimental Study of the Detection Limit in Dual-Gate Biosensors Using Ultra-Thin Silicon Transistors. Acs Nano. PMID 28636326 DOI: 10.1021/Acsnano.7B02986  0.319
2017 Hsieh C, Chang Y, Chen Y, Shahrjerdi D, Banerjee SK. Highly Non-linear and Reliable Amorphous Silicon Based Back-to-Back Schottky Diode as Selector Device for Large Scale RRAM Arrays Ecs Journal of Solid State Science and Technology. 6: N143-N147. DOI: 10.1149/2.0041709Jss  0.556
2017 Hsieh C, Chang Y, Jeon Y, Roy A, Shahrjerdi D, Banerjee SK. Short-Term Relaxation in HfOx/CeOx Resistive Random Access Memory With Selector Ieee Electron Device Letters. 38: 871-874. DOI: 10.1109/Led.2017.2710955  0.453
2017 Alharbi A, Zahl P, Shahrjerdi D. Material and device properties of superacid-treated monolayer molybdenum disulfide Applied Physics Letters. 110: 033503. DOI: 10.1063/1.4974046  0.362
2016 Hsieh C, Roy A, Chang Y, Shahrjerdi D, Banerjee SK. A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems Applied Physics Letters. 109: 223501. DOI: 10.1063/1.4971188  0.473
2016 Alharbi A, Shahrjerdi D. Electronic properties of monolayer tungsten disulfide grown by chemical vapor deposition Applied Physics Letters. 109: 193502. DOI: 10.1063/1.4967188  0.379
2016 Shahrjerdi D, Bedell SW, Khakifirooz A, Cheng K. Mechanically flexible nanoscale silicon integrated circuits powered by photovoltaic energy harvesters Solid-State Electronics. 117: 117-122. DOI: 10.1016/J.Sse.2015.11.023  0.357
2016 Alharbi A, Shahrjerdi D. Energy band engineering of flexible gallium arsenide through substrate cracking with pre-tensioned films Physica Status Solidi - Rapid Research Letters. 10: 627-633. DOI: 10.1002/Pssr.201600163  0.363
2014 Bedell SW, Shahrjerdi D, Fogel K, Lauro P, Bayram C, Hekmatshoar B, Li N, Ott J, Sadana D. Advanced flexible electronics: Challenges and opportunities Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2051716  0.361
2014 Hekmatshoar B, Shahrjerdi D, Hopstaken M. High-efficiency heterojunction solar cells on crystalline germanium substrates Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2045632  0.358
2013 Shahrjerdi D, Franklin AD, Oida S, Ott JA, Tulevski GS, Haensch W. High-performance air-stable n-type carbon nanotube transistors with erbium contacts. Acs Nano. 7: 8303-8. PMID 24006886 DOI: 10.1021/Nn403935V  0.368
2013 Shahrjerdi D, Bedell SW. Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic. Nano Letters. 13: 315-20. PMID 23249265 DOI: 10.1021/Nl304310X  0.421
2013 Bedell SW, Fogel K, Lauro P, Shahrjerdi D, Ott JA, Sadana D. Layer transfer by controlled spalling Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/15/152002  0.387
2013 Ramón ME, Akyol T, Shahrjerdi D, Young CD, Cheng J, Register LF, Banerjee SK. Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric Applied Physics Letters. 102. DOI: 10.1063/1.4776678  0.519
2013 Shahrjerdi D, Bedell SW, Bayram C, Lubguban CC, Fogel K, Lauro P, Ott JA, Hopstaken M, Gayness M, Sadana D. Ultralight high-efficiency flexible InGaP/(In)GaAs tandem solar cells on plastic Advanced Energy Materials. 3: 566-571. DOI: 10.1002/Aenm.201200827  0.303
2012 Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HS, Haensch W. Variability in carbon nanotube transistors: improving device-to-device consistency. Acs Nano. 6: 1109-15. PMID 22272749 DOI: 10.1021/Nn203516Z  0.381
2012 Hekmatshoar B, Shahrjerdi D, Hopstaken M, Ott JA, Sadana DK. Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4751339  0.408
2012 Shahrjerdi D, Bedell SW, Ebert C, Bayram C, Hekmatshoar B, Fogel K, Lauro P, Gaynes M, Gokmen T, Ott JA, Sadana DK. High-efficiency thin-film InGaP/InGaAs/Ge tandem solar cells enabled by controlled spalling technology Applied Physics Letters. 100. DOI: 10.1063/1.3681397  0.334
2012 Shahrjerdi D, Hekmatshoar B, Bedell SW, Hopstaken M, Sadana DK. Low-temperature epitaxy of compressively strained silicon directly on silicon substrates Journal of Electronic Materials. 41: 494-497. DOI: 10.1007/S11664-011-1807-6  0.358
2011 Shahrjerdi D, Hekmatshoar B, Sadana DK. Low-temperature a-Si:H/GaAs Hheterojunction solar cells Ieee Journal of Photovoltaics. 1: 104-107. DOI: 10.1109/Jphotov.2011.2164391  0.363
2011 Hekmatshoar B, Shahrjerdi D, Sadana DK. Novel heterojunction solar cells with conversion efficiencies approaching 21% on p-type crystalline silicon substrates Technical Digest - International Electron Devices Meeting, Iedm. 36.6.1-36.6.4. DOI: 10.1109/IEDM.2011.6131687  0.302
2010 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406  0.506
2010 Shahrjerdi D, Nah J, Hekmatshoar B, Akyol T, Ramon M, Tutuc E, Banerjee SK. Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2 O3 gate dielectric Applied Physics Letters. 97. DOI: 10.1063/1.3521284  0.498
2009 Banerjee S, Tutuc E, Kim S, Akyol T, Jamil M, Shahrjerdi D, Donnelly J, Colombo L. High-k dielectrics for Ge, III-V and graphene MOSFETs Ecs Transactions. 25: 285-299. DOI: 10.1149/1.3206627  0.327
2009 Garcia-Gutierrez DI, Shahrjerdi D, Kaushik V, Banerjee SK. Physical and electrical characterizations of metal-oxide-semiconductor capacitors fabricated on GaAs substrates with different surface chemical treatments and Al2O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2390-2395. DOI: 10.1116/1.3256229  0.558
2009 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain Device Research Conference - Conference Digest, Drc. 15-16. DOI: 10.1109/DRC.2009.5354970  0.305
2009 Nah J, Liu ES, Shahrjerdi D, Varahramyan KM, Banerjee SK, Tutuc E. Realization of dual-gated Ge- SixGe1-x core-shell nanowire field effect transistors with highly doped source and drain Applied Physics Letters. 94. DOI: 10.1063/1.3079410  0.565
2009 Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021  0.572
2009 Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. Protein-assembled nanocrystal-based vertical flash memory devices with Al 2O 3 integration Journal of Electronic Materials. 38: 438-442. DOI: 10.1007/S11664-008-0645-7  0.742
2008 Jamil M, Donnelly JP, Lee S, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A Comprehensive Study of Growth Techniques & Characterization of Epitaxial Ge1−xCx (111) Layers Grown Directly on Si (111) for MOS Applications Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C07-03  0.638
2008 Shahrjerdi D, Garcia-Gutierrez DI, Kim S, Hasan M, Varahramyan K, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode n-channel GaAs MOSFETs employing a wet clean process for GaAs substrates Ecs Transactions. 16: 59-67. DOI: 10.1149/1.2979981  0.349
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type InP MOSFETs with EOT of 21 Å using atomic layer deposited Al2 O3 gate dielectric Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2938728  0.579
2008 Shahrjerdi D, Nuntawong N, Balakrishnan G, Garcia-Gutierrez DI, Khoshakhlagh A, Tutuc E, Huffaker D, Lee JC, Banerjee SK. Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge Si1-x Gex Si substrates with Al2 O3 gate dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1182-1186. DOI: 10.1116/1.2835061  0.57
2008 Liu H, Winkenwerder W, Liu Y, Ferrer D, Shahrjerdi D, Stanley SK, Ekerdt JG, Banerjee SK. Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications Ieee Transactions On Electron Devices. 55: 3610-3614. DOI: 10.1109/Ted.2008.2006889  0.612
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  0.526
2008 Ferdousi F, Sarkar J, Tang S, Shahrjerdi D, Akyol T, Donnelly JP, Tutuc E, Banerjee SK. Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide Device Research Conference - Conference Digest, Drc. 57-58. DOI: 10.1109/DRC.2008.4800732  0.713
2008 Zhao H, Shahrjerdi D, Zhu F, Kim HS, Ok I, Zhang M, Yum JH, Banerjee SK, Lee JC. Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx HfO2 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2943186  0.562
2008 Shahrjerdi D, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937404  0.532
2008 Zhao H, Shahrjerdi D, Zhu F, Zhang M, Kim HS, Ok I, Yum JH, Park SI, Banerjee SK, Lee JC. Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2937117  0.564
2008 Shahrjerdi D, Akyol T, Ramon M, Garcia-Gutierrez DI, Tutuc E, Banerjee SK. Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric Applied Physics Letters. 92. DOI: 10.1063/1.2931708  0.567
2008 Garcia-Gutierrez DI, Kaushik V, Shahrjerdi D, Banerjee SK. Physical and electrical characterization of the interface between atomic-layer-deposited Al2O3 on GaAs substrates for CMOS applications Microscopy and Microanalysis. 14: 446-447. DOI: 10.1017/S1431927608083001  0.523
2008 Jamil M, Donnelly JP, Lee SH, Shahrjerdi D, Akyol T, Tutuc E, Banerjee SK. A comprehensive study of growth techniques and characterization of epitaxial Ge1-xCx (111) layers grown directly on Si (111) for MOS applications Materials Research Society Symposium Proceedings. 1068: 273-278.  0.317
2007 Banerjee SK, Tang S, Mao C, Sarkar J, Liu H, Shahrjerdi D, Lee CH, Trent JD. Bio-Nano Approaches to Fabrication of Quantum Dot Floating Gate Flash Memories The Japan Society of Applied Physics. 2007: 948-949. DOI: 10.7567/Ssdm.2007.D-8-1  0.463
2007 Donnelly JP, Shahrjerdi D, Kelly DQ, Tutuc E, Banerjee SK. Enhanced channel mobility materials for MOSFETs on Si substrates Ecs Transactions. 11: 47-60. DOI: 10.1149/1.2780764  0.332
2007 Oye MM, Shahrjerdi D, Ok I, Hurst JB, Lewis SD, Dey S, Kelly DQ, Joshi S, Mattord TJ, Yu X, Wistey MA, Harris JS, Holmes AL, Lee JC, Banerjee SK. Molecular-beam epitaxy growth of device-compatible GaAs on silicon substrates with thin (∼80 nm) Si1-x Gex step-graded buffer layers for high- κ III-V metal-oxide-semiconductor field effect transistor applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1098-1102. DOI: 10.1116/1.2713119  0.672
2007 Shahrjerdi D, Garcia-Gutierrez DI, Banerjee SK. Fabrication of Ni nanocrystal flash memories using a polymeric self-assembly approach Ieee Electron Device Letters. 28: 793-796. DOI: 10.1109/Led.2007.902612  0.496
2007 Sarkar J, Dey S, Shahrjerdi D, Banerjee SK. Vertical flash memory cell with nanocrystal floating gate for ultradense integration and good retention Ieee Electron Device Letters. 28: 449-451. DOI: 10.1109/Led.2007.895445  0.628
2007 Shahrjerdi D, Garcia-Gutierrez DI, Akyol T, Bank SR, Tutuc E, Lee JC, Banerjee SK. GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO 2 gate dielectric: Fabrication and characterization Applied Physics Letters. 91. DOI: 10.1063/1.2806190  0.563
2007 Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438  0.545
2007 Sarkar J, Tang S, Shahrjerdi D, Banerjee SK. Vertical flash memory with protein-mediated assembly of nanocrystal floating gate Applied Physics Letters. 90. DOI: 10.1063/1.2711528  0.518
2007 Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG. Selective silicon nanoparticle growth on high-density arrays of silicon nitride Journal of Crystal Growth. 308: 269-277. DOI: 10.1016/J.Jcrysgro.2007.08.024  0.484
2006 Oye MM, Hurst JB, Shahrjerdi D, Kulkarni NN, Muller A, Beck AL, Sidhu R, Shih CK, Banerjee SK, Campbell JC, Holmes AL, Mattord TJ, Reifsnider JM. Atomic force microscopy study of sapphire surfaces annealed with a H 2O flux from a baffled molecular-beam epitaxy effusion cell loaded with Al(OH) 3 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1572-1576. DOI: 10.1116/1.2200384  0.46
2006 Shahrjerdi D, Oye MM, Holmes AL, Banerjee SK. Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization Applied Physics Letters. 89. DOI: 10.1063/1.2234837  0.571
2005 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Afzali-Kusha A, Robertson MD, Tonita A. Low-temperature copper-induced lateral growth of polycrystalline germanium assisted by external compressive stress Journal of Applied Physics. 97. DOI: 10.1063/1.1836012  0.334
2005 Donnelly JP, Kelly DQ, Joshi S, Dey S, Shahrjerdi D, Wiedeman I, Ahmad D, Banerjee SK. High mobility strained Ge MOSFETs with high-k gate dielectric on Si 2005 International Semiconductor Device Research Symposium. 2005: 150.  0.341
2004 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Robertson M, Asl Soliemani E. Polycrystalline germanium and silicon-germanium alloys on plastic for realization of thin-film transistors Materials Research Society Symposium Proceedings. 814: 101-105. DOI: 10.1557/Proc-814-I6.2  0.391
2004 Makki BS, Moradi M, Moafi A, Mohajerzadeh S, Hekmatshoar B, Shahrjerdi D. Fabrication of poly-Ge-based thermopiles on plastic Ieee Sensors Journal. 4: 743-748. DOI: 10.1109/Jsen.2004.836862  0.359
2004 Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium Applied Physics Letters. 85: 1054-1056. DOI: 10.1063/1.1779946  0.376
2004 Shahrjerdi D, Fathipour M, Hekmatshoar B, Khakifirooz A. A lateral structure for low-cost fabrication of COOLMOS™ Solid-State Electronics. 48: 1953-1957. DOI: 10.1016/J.Sse.2004.05.041  0.354
2004 Hekmatshoar B, Khajooeizadeh A, Mohajerzadeh S, Shahrjerdi D, Asl-Soleimani E. Low-temperature non-metal-induced crystallization of germanium for fabrication of thin-film transistors Materials Science in Semiconductor Processing. 7: 419-422. DOI: 10.1016/J.Mssp.2004.09.019  0.409
2004 Shahrjerdi D, Hekmatshoar B, Mohajerzadeh SS, Khakifirooz A, Robertson M. High Mobility Poly-Ge Thin-Film Transistors Fabricated on Flexible Plastic Substrates at Temperatures below 130°C Journal of Electronic Materials. 33: 353-357. DOI: 10.1007/S11664-004-0142-6  0.377
2003 Hekmatshoar B, Shahrjerdi D, Mohajerzadeh S, Khakifirooz A, Goodarzi A, Robertson M. Low temperature crystallization of germanium on plastic by externally applied compressive stress Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 752-755. DOI: 10.1116/1.1569923  0.334
2003 Shahrjerdi D, Hekmatshoar B, Rezaee L, Mohajerzadeh SS. Low temperature stress-induced crystallization of germanium on plastic Thin Solid Films. 427: 330-334. DOI: 10.1016/S0040-6090(02)01200-2  0.323
Show low-probability matches.