☰

Bongmook Lee, Ph.D. - Publications

Affiliations: 
2010 North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
Tree Info Similar researchers PubMed Report error

41 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Mohaddes F, da Silva R, Akbulut F, Zhou Y, Tanneeru A, Lobaton E, Lee B, Misra V. A Pipeline for Adaptive Filtering and Transformation of Noisy Left-Arm ECG to Its Surrogate Chest Signal Electronics. 9: 866. DOI: 10.3390/Electronics9050866  0.447
2020 Azam F, Tanneeru A, Lee B, Misra V. Engineering a Unified Dielectric Solution for AlGaN/GaN MOS-HFET Gate and Access Regions Ieee Transactions On Electron Devices. 67: 881-887. DOI: 10.1109/Ted.2020.2969394  0.617
2019 Yang X, Lee B, Misra V. Effects of LaSiOx Thickness and Forming Gas Anneal Temperature on Threshold Voltage Instability of 4H-SiC MOSFETs With LaSiOx Ieee Transactions On Electron Devices. 66: 539-545. DOI: 10.1109/Ted.2018.2875094  0.611
2018 Yang X, Lee B, Misra V. Improvement of Threshold Voltage Reliability of 4H-SiC MOSFETs With Lanthanum Silicate by High Temperature Forming Gas Anneal Ieee Electron Device Letters. 39: 244-247. DOI: 10.1109/Led.2017.2785851  0.611
2018 Lim M, Mills S, Lee B, Misra V. Investigation of O3 Adsorption on Ultra-Thin ALD SnO2 by QCM Ieee Sensors Journal. 18: 3590-3594. DOI: 10.1109/Jsen.2018.2815698  0.482
2018 Jiang Y, Sung W, Baliga J, Wang S, Lee B, Huang A. Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height Journal of Electronic Materials. 47: 927-931. DOI: 10.1007/S11664-017-5812-2  0.479
2017 Sarkar B, Mills S, Lee B, Pitts WS, Misra V, Franzon PD. On Using the Volatile Mem-Capacitive Effect of TiO2 Resistive Random Access Memory to Mimic the Synaptic Forgetting Process Journal of Electronic Materials. 47: 994-997. DOI: 10.1007/S11664-017-5914-X  0.547
2016 Kim DE, Kang MJ, Park GR, Lee BJ, Kwon YS, Shin HK. White OLED in Hybrid Structure for Enhancing Color Purity. Journal of Nanoscience and Nanotechnology. 16: 6374-7. PMID 27427721 DOI: 10.1166/jnn.2016.12131  0.303
2016 Dieffenderfer J, Goodell H, Mills S, McKnight M, Yao S, Lin F, Beppler E, Bent B, Lee B, Misra V, Zhu Y, Oralkan O, Strohmaier J, Muth J, Peden D, et al. Low Power Wearable Systems for Continuous Monitoring of Environment and Health for Chronic Respiratory Disease. Ieee Journal of Biomedical and Health Informatics. PMID 27249840 DOI: 10.1109/Jbhi.2016.2573286  0.477
2016 Lee D, Yoon J, Lee J, Lee BH, Seol ML, Bae H, Jeon SB, Seong H, Im SG, Choi SJ, Choi YK. Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric. Scientific Reports. 6: 26121. PMID 27184121 DOI: 10.1038/Srep26121  0.374
2016 Singamaneni SR, Prater J, Lee B, Misra V, Narayan J. Memristive behavior in BaTiO3/La0.7Sr0.3MnO3 heterostructures integrated with semiconductors Mrs Advances. 1: 275-280. DOI: 10.1557/Adv.2016.70  0.629
2016 Yang X, Lee B, Misra V. Electrical Characteristics of SiO2 Deposited by Atomic Layer Deposition on 4H-SiC after Nitrous Oxide Anneal Ieee Transactions On Electron Devices. 63: 2826-2830. DOI: 10.1109/Ted.2016.2565665  0.658
2016 Ramanan N, Lee B, Misra V. Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/3/035016  0.794
2015 Mills S, Lim M, Lee B, Misra V. Atomic Layer Deposition of SnO2 for selective room temperature low ppb level O3 sensing Ecs Journal of Solid State Science and Technology. 4: S3059-S3061. DOI: 10.1149/2.0111510Jss  0.574
2015 Lim M, Mills S, Lee B, Misra V. Application of AlGaN/GaN heterostructures for ultra-low power nitrogen dioxide sensing Ecs Journal of Solid State Science and Technology. 4: S3034-S3037. DOI: 10.1149/2.0101510Jss  0.496
2015 Yang X, Lee B, Misra V. Investigation of Lanthanum Silicate Conditions on 4H-SiC MOSFET Characteristics Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2015.2480047  0.627
2015 Ramanan N, Lee B, Misra V. Comparison of methods for accurate characterization of interface traps in GaN MOS-HFET devices Ieee Transactions On Electron Devices. 62: 546-553. DOI: 10.1109/Ted.2014.2382677  0.802
2015 Yang X, Lee B, Misra V. High Mobility 4H-SiC Lateral MOSFETs Using Lanthanum Silicate and Atomic Layer Deposited SiO2 Ieee Electron Device Letters. 36: 312-314. DOI: 10.1109/Led.2015.2399891  0.65
2015 Ramanan N, Lee B, Misra V. ALD gate dielectrics for improved threshold voltage stability in AlGaN/GaN MOS-HFETs for power applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/12/125017  0.836
2015 Sarkar B, Lee B, Misra V. Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105014  0.565
2015 Ramanan N, Lee B, Misra V. Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory Applied Physics Letters. 106. DOI: 10.1063/1.4922799  0.819
2015 Singamaneni SR, Prater JT, Nori S, Kumar D, Lee B, Misra V, Narayan J. Ferroelectric and magnetic properties of multiferroic BiFeO3-La0.7Sr0.3MnO3 heterostructures integrated with Si (100) Journal of Applied Physics. 117. DOI: 10.1063/1.4913811  0.59
2014 Ramanan N, Lee B, Misra V. Device modeling for understanding AlGaN/GaN HEMT gate-lag Ieee Transactions On Electron Devices. 61: 2012-2018. DOI: 10.1109/Ted.2014.2313814  0.797
2014 Sarkar B, Ramanan N, Jayanti S, Spigna ND, Lee B, Franzon P, Misra V. Dual floating gate unified memory MOSFET with simultaneous dynamic and non-volatile operation Ieee Electron Device Letters. 35: 48-50. DOI: 10.1109/Led.2013.2289751  0.764
2014 Kirkpatrick C, Lee B, Ramanan N, Misra V. Flash MOS-HFET operational stability for power converter circuits Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 875-878. DOI: 10.1002/Pssc.201300547  0.804
2013 Lee B, Choi YH, Kirkpatrick C, Huang AQ, Misra V. Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high-k dielectric Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074016  0.788
2013 Ramanan N, Lee B, Kirkpatrick C, Suri R, Misra V. Properties of atomic layer deposited dielectrics for AlGaN/GaN device passivation Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074004  0.808
2012 Lee B, Novak SR, Biswas N, Misra V. The Role of Rare Earth Metals on Effective Work Function Modulation of Nickel Fully-Silicided Gate/High-$k$ Dielectric Stacks for n-Channel Metal Oxide Semiconductor Device Applications Japanese Journal of Applied Physics. 51: 011802. DOI: 10.1143/Jjap.51.011802  0.826
2012 Kirkpatrick CJ, Lee B, Suri R, Yang X, Misra V. Atomic layer deposition of SiO 2 for AlGaN/GaN MOS-HFETs Ieee Electron Device Letters. 33: 1240-1242. DOI: 10.1109/Led.2012.2203782  0.839
2012 Kaushal V, Íñiguez-De-La-Torre I, Gonzalez T, Mateos J, Lee B, Misra V, Margala M. Effects of a high-k dielectric on the performance of III-V ballistic deflection transistors Ieee Electron Device Letters. 33: 1120-1122. DOI: 10.1109/Led.2012.2197669  0.68
2012 Lee B, Kirkpatrick C, Choi YH, Yang X, Huang AQ, Misra V. Normally-off AlGaN/GaN MOSHFET using ALD SiO 2 tunnel dielectric and ALD HfO 2 charge storage layer for power device application Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 868-870. DOI: 10.1002/Pssc.201100422  0.788
2012 Kirkpatrick C, Lee B, Choi Y, Huang A, Misra V. Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 864-867. DOI: 10.1002/Pssc.201100421  0.752
2011 Lee B, Lichtenwalner DJ, Novak SR, Misra V. Impact of AlTaO Dielectric Capping on Device Performance and Reliability for Advanced Metal Gate/High-$k$ PMOS Application Ieee Transactions On Electron Devices. 58: 2928-2935. DOI: 10.1109/Ted.2011.2160064  0.818
2011 Lee B, Novak SR, Lichtenwalner DJ, Yang X, Misra V. Investigation of the Origin of $V_{T}/V_{\rm FB}$ Modulation by $\hbox{La}_{2}\hbox{O}_{3}$ Capping Layer Approaches for NMOS Application: Role of La Diffusion, Effect of Host High- $k$ Layer, and Interface Properties Ieee Transactions On Electron Devices. 58: 3106-3115. DOI: 10.1109/Ted.2011.2159306  0.812
2011 Jeff RC, Yun M, Ramalingam B, Lee B, Misra V, Triplett G, Gangopadhyay S. Charge storage characteristics of ultra-small Pt nanoparticle embedded GaAs based non-volatile memory Applied Physics Letters. 99: 072104. DOI: 10.1063/1.3625426  0.629
2011 Kirkpatrick C, Lee B, Yang X, Misra V. Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics Physica Status Solidi (C). 8: 2445-2447. DOI: 10.1002/Pssc.201001064  0.799
2010 Novak S, Lee B, Yang X, Misra V. Platinum Nanoparticles Grown by Atomic Layer Deposition for Charge Storage Memory Applications Journal of the Electrochemical Society. 157: H589. DOI: 10.1149/1.3365031  0.795
2008 Suri R, Lee B, Lichtenwalner DJ, Biswas N, Misra V. Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric Applied Physics Letters. 93: 193504. DOI: 10.1063/1.3007978  0.839
2007 Lee B, Biswas N, Novak SR, Misra V. Characteristics of Ni/Gd FUSI for NMOS Gate Electrode Applications Ieee Electron Device Letters. 28: 555-557. DOI: 10.1109/Led.2007.897889  0.805
2007 Chen Z, Lee B, Sarkar S, Gowda S, Misra V. A molecular memory device formed by HfO2 encapsulation of redox-active molecules Applied Physics Letters. 91: 173111. DOI: 10.1063/1.2800824  0.821
2006 Chen B, Jha R, Lazar H, Biswas N, Lee J, Lee B, Wielunski L, Garfunkel E, Misra V. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes Ieee Electron Device Letters. 27: 228-230. DOI: 10.1109/Led.2006.871184  0.779
Show low-probability matches.