Year |
Citation |
Score |
2021 |
Wang X, Wang B, Wu Y, Wang E, Luo H, Sun Y, Fu D, Sun Y, Liu K. Two-Dimensional Lateral Heterostructures Made by Selective Reaction on a Patterned Monolayer MoS Matrix. Acs Applied Materials & Interfaces. PMID 34043911 DOI: 10.1021/acsami.1c00725 |
0.303 |
|
2020 |
Fu W, Qiao J, Zhao X, Chen Y, Fu D, Yu W, Leng K, Song P, Chen Z, Yu T, Pennycook SJ, Quek SY, Loh KP. Room Temperature Commensurate Charge Density Wave on Epitaxially Grown Bilayer 2H-Tantalum Sulfide on Hexagonal Boron Nitride. Acs Nano. PMID 32049489 DOI: 10.1021/Acsnano.0C00303 |
0.342 |
|
2018 |
Poh SM, Zhao X, Tan SJR, Fu D, Fei W, Chu L, Jiadong D, Zhou W, Pennycook SJ, Castro Neto AH, Loh KP. Molecular Beam Epitaxy of Highly Crystalline MoSe on Hexagonal Boron Nitride. Acs Nano. PMID 29985581 DOI: 10.1021/Acsnano.8B04037 |
0.373 |
|
2018 |
Hong S, Fu D, Hou J, Zhou D, Wang B, Sun Y, Liu P, Liu K. Robust photoluminescence energy of MoS2/graphene heterostructure against electron irradiation Science China Materials. 61: 1351-1359. DOI: 10.1007/S40843-018-9255-9 |
0.416 |
|
2017 |
Zhao X, Fu D, Ding Z, Zhang Y, Wan D, Tan SJR, Chen Z, Leng K, Dan J, Fu W, Geng D, Song P, Du Y, Venkatesan T, Pantelides ST, et al. Mo-terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film. Nano Letters. PMID 29253330 DOI: 10.1021/Acs.Nanolett.7B04426 |
0.333 |
|
2017 |
Peng B, Li Q, Liang X, Song P, Li J, He K, Fu D, Li Y, Shen C, Wang H, Wang C, Liu T, Zhang L, Lu H, Wang X, et al. Valley Polarization of Trions and Magnetoresistance in Heterostructures of MoS2 and Yttrium Iron Garnet. Acs Nano. PMID 29182851 DOI: 10.1021/Acsnano.7B05743 |
0.371 |
|
2017 |
Fu D, Zhao X, Zhang YY, Li L, Xu H, Jang AR, Yoon SI, Song P, Poh SM, Ren T, Ding Z, Fu W, Shin TJ, Shin HS, Pantelides ST, et al. Molecular Beam Epitaxy of Highly-Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride. Journal of the American Chemical Society. PMID 28633527 DOI: 10.1021/Jacs.7B05131 |
0.34 |
|
2017 |
Chen J, Zhao X, Tan SJ, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum TC, et al. Chemical Vapor Deposition of Large-size Monolayer MoSe2 Crystals on Molten Glass. Journal of the American Chemical Society. PMID 28051869 DOI: 10.1021/Jacs.6B12156 |
0.306 |
|
2016 |
Tong SW, Balapanuru J, Fu D, Loh KP. Thermally Stable Mesoporous Perovskite Solar Cells incorporating Low-Temperature Processed Graphene/Polymer Electron Transporting Layer. Acs Applied Materials & Interfaces. PMID 27730813 DOI: 10.1021/Acsami.6B10278 |
0.364 |
|
2016 |
Hou J, Wang X, Fu D, Ko C, Chen Y, Sun Y, Lee S, Wang KX, Dong K, Sun Y, Tongay S, Jiao L, Yao J, Liu K, Wu J. Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal-Insulator Phase Transition in Active Substrates. Small (Weinheim An Der Bergstrasse, Germany). PMID 27335137 DOI: 10.1002/Smll.201601021 |
0.756 |
|
2016 |
Peng B, Yu G, Zhao Y, Xu Q, Xing G, Liu X, Fu D, Liu B, Tan JR, Tang W, Lu H, Xie J, Deng L, Sum TC, Loh KP. Achieving Ultrafast Hole Transfer at the Monolayer MoS2 and CH3NH3PbI3 Perovskite Interface by Defect Engineering. Acs Nano. PMID 27243103 DOI: 10.1021/Acsnano.6B02845 |
0.407 |
|
2016 |
Ko C, Lee Y, Chen Y, Suh J, Fu D, Suslu A, Lee S, Clarkson JD, Choe HS, Tongay S, Ramesh R, Wu J. Ferroelectrically Gated Atomically Thin Transition-Metal Dichalcogenides as Nonvolatile Memory. Advanced Materials (Deerfield Beach, Fla.). PMID 26894866 DOI: 10.1002/Adma.201504779 |
0.751 |
|
2016 |
Klionsky DJ, Abdelmohsen K, Abe A, Abedin MJ, Abeliovich H, Acevedo Arozena A, Adachi H, Adams CM, Adams PD, Adeli K, Adhihetty PJ, Adler SG, Agam G, Agarwal R, Aghi MK, ... ... Fu D, et al. Guidelines for the use and interpretation of assays for monitoring autophagy (3rd edition). Autophagy. 12: 1-222. PMID 26799652 DOI: 10.1080/15548627.2015.1100356 |
0.553 |
|
2016 |
Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Metal-Insulator Transitions: Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition (Adv. Mater. Interfaces 2/2016) Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201670006 |
0.628 |
|
2016 |
Kim JH, Fu D, Kwon S, Liu K, Wu J, Park JY. Crossing Thermal Lubricity and Electronic Effects in Friction: Vanadium Dioxide under the Metal-Insulator Transition Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500388 |
0.639 |
|
2015 |
Liu K, Hsin CL, Fu D, Suh J, Tongay S, Chen M, Sun Y, Yan A, Park J, Yu KM, Guo W, Zettl A, Zheng H, Chrzan DC, Wu J. Self-Passivation of Defects: Effects of High-Energy Particle Irradiation on the Elastic Modulus of Multilayer Graphene. Advanced Materials (Deerfield Beach, Fla.). PMID 26437308 DOI: 10.1002/Adma.201501752 |
0.743 |
|
2015 |
Kocer H, Butun S, Palacios E, Liu Z, Tongay S, Fu D, Wang K, Wu J, Aydin K. Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films. Scientific Reports. 5: 13384. PMID 26294085 DOI: 10.1038/Srep13384 |
0.7 |
|
2015 |
Tosun M, Fu D, Desai SB, Ko C, Seuk Kang J, Lien DH, Najmzadeh M, Tongay S, Wu J, Javey A. MoS2 Heterojunctions by Thickness Modulation. Scientific Reports. 5: 10990. PMID 26121940 DOI: 10.1038/Srep10990 |
0.674 |
|
2015 |
Suh J, Yu KM, Fu D, Liu X, Yang F, Fan J, Smith DJ, Zhang YH, Furdyna JK, Dames C, Walukiewicz W, Wu J. Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi₂Te₃ by Multifunctionality of Native Defects. Advanced Materials (Deerfield Beach, Fla.). 27: 3681-6. PMID 25974062 DOI: 10.1002/Adma.201501350 |
0.725 |
|
2015 |
Kocer H, Butun S, Palacios E, Liu Z, Tongay S, Fu D, Wang K, Wu J, Aydin K. Intensity tunable infrared broadband absorbers based on VO 2 phase transition using planar layered thin films Scientific Reports. 5. DOI: 10.1038/srep13384 |
0.522 |
|
2015 |
Cheng C, Fu D, Liu K, Guo H, Xu S, Ryu SG, Ho O, Zhou J, Fan W, Bao W, Salmeron M, Wang N, Grigoropoulos CP, Wu J. Directly metering light absorption and heat transfer in single nanowires using metal-insulator transition in VO2 Advanced Optical Materials. 3: 336-341. DOI: 10.1002/Adom.201400483 |
0.697 |
|
2014 |
Suh J, Park TE, Lin DY, Fu D, Park J, Jung HJ, Chen Y, Ko C, Jang C, Sun Y, Sinclair R, Chang J, Tongay S, Wu J. Doping against the native propensity of MoS2: degenerate hole doping by cation substitution. Nano Letters. 14: 6976-82. PMID 25420217 DOI: 10.1021/Nl503251H |
0.763 |
|
2014 |
Liu K, Yan Q, Chen M, Fan W, Sun Y, Suh J, Fu D, Lee S, Zhou J, Tongay S, Ji J, Neaton JB, Wu J. Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures. Nano Letters. 14: 5097-103. PMID 25120033 DOI: 10.1021/Nl501793A |
0.754 |
|
2014 |
Cheng C, Guo H, Amini A, Liu K, Fu D, Zou J, Song H. Self-assembly and horizontal orientation growth of VO2 nanowires. Scientific Reports. 4: 5456. PMID 24965899 DOI: 10.1038/Srep05456 |
0.589 |
|
2014 |
Liu K, Cheng C, Suh J, Tang-Kong R, Fu D, Lee S, Zhou J, Chua LO, Wu J. Powerful, multifunctional torsional micromuscles activated by phase transition. Advanced Materials (Deerfield Beach, Fla.). 26: 1746-50. PMID 24765648 DOI: 10.1002/Adma.201304064 |
0.734 |
|
2014 |
Suh J, Fu D, Liu X, Furdyna JK, Yu KM, Walukiewicz W, Wu J. Fermi-level stabilization in the topological insulators Bi 2 Se 3 and Bi 2 Te 3: Origin of the surface electron gas Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115307 |
0.733 |
|
2014 |
Shi Z, Jin C, Yang W, Ju L, Horng J, Lu X, Bechtel HA, Martin MC, Fu D, Wu J, Watanabe K, Taniguchi T, Zhang Y, Bai X, Wang E, et al. Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices Nature Physics. DOI: 10.1038/Nphys3075 |
0.552 |
|
2013 |
Fu D, Zhou J, Tongay S, Liu K, Fan W, King Liu TJ, Wu J. Mechanically modulated tunneling resistance in monolayer MoS2 Applied Physics Letters. 103. DOI: 10.1063/1.4827301 |
0.705 |
|
2013 |
Tong T, Fu D, Levander AX, Schaff WJ, Pantha BN, Lu N, Liu B, Ferguson I, Zhang R, Lin JY, Jiang HX, Wu J, Cahill DG. Suppression of thermal conductivity in InxGa1-xN alloys by nanometer-scale disorder Applied Physics Letters. 102. DOI: 10.1063/1.4798838 |
0.748 |
|
2013 |
Fu D, Liu K, Tao T, Lo K, Cheng C, Liu B, Zhang R, Bechtel HA, Wu J. Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films Journal of Applied Physics. 113. DOI: 10.1063/1.4788804 |
0.709 |
|
2013 |
Fang H, Zhang R, Liu B, Li Y, Fu D, Li Y, Xie Z, Zhuang Z, Zheng Y, Wu J, Jin B, Chen J, Wu P. Temperature dependence of the point defect properties of GaN thin films studied by terahertz time-domain spectroscopy Science China Physics, Mechanics and Astronomy. 56: 2059-2064. DOI: 10.1007/S11433-013-5202-6 |
0.336 |
|
2012 |
Liu K, Fu D, Cao J, Suh J, Wang KX, Cheng C, Ogletree DF, Guo H, Sengupta S, Khan A, Yeung CW, Salahuddin S, Deshmukh MM, Wu J. Dense electron system from gate-controlled surface metal-insulator transition. Nano Letters. 12: 6272-7. PMID 23163634 DOI: 10.1021/Nl303379T |
0.762 |
|
2012 |
Miller C, Triplett M, Lammatao J, Suh J, Fu D, Wu J, Yu D. Unusually long free carrier lifetime and metal-insulator band offset in vanadium dioxide Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.085111 |
0.751 |
|
2012 |
Xie Z, Zhang R, Fu D, Liu B, Xiu X, Hua X, Zhao H, Chen P, Han P, Shi Y, Zheng Y. The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition Science China Physics, Mechanics and Astronomy. 55: 1249-1252. DOI: 10.1007/S11433-012-4717-6 |
0.352 |
|
2011 |
Seidel J, Fu D, Yang SY, Alarcón-Lladó E, Wu J, Ramesh R, Ager JW. Efficient photovoltaic current generation at ferroelectric domain walls. Physical Review Letters. 107: 126805. PMID 22026787 DOI: 10.1103/Physrevlett.107.126805 |
0.543 |
|
2011 |
Fu D, Zou J, Wang K, Zhang R, Yu D, Wu J. Electrothermal dynamics of semiconductor nanowires under local carrier modulation. Nano Letters. 11: 3809-15. PMID 21790187 DOI: 10.1021/Nl2018806 |
0.612 |
|
2011 |
Fu D, Levander AX, Zhang R, Ager JW, Wu J. Electrothermally driven current vortices in inhomogeneous bipolar semiconductors Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.045205 |
0.762 |
|
2011 |
Levander AX, Tong T, Yu KM, Suh J, Fu D, Zhang R, Lu H, Schaff WJ, Dubon O, Walukiewicz W, Cahill DG, Wu J. Effects of point defects on thermal and thermoelectric properties of InN Applied Physics Letters. 98. DOI: 10.1063/1.3536507 |
0.746 |
|
2009 |
Fu D, Zhang R, Wang B, Zhang Z, Liu B, Xie Z, Xiu X, Lu H, Zheng Y, Edwards G. Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain Journal of Applied Physics. 106: 023714. DOI: 10.1063/1.3174436 |
0.332 |
|
2008 |
Zhang Q, Fu D, Wang B, Zhang R, Xing DY. Signals for specular Andreev reflection. Physical Review Letters. 101: 047005. PMID 18764360 DOI: 10.1103/Physrevlett.101.047005 |
0.314 |
|
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