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Yujun Shi - Publications

Affiliations: 
University of Calgary, Calgary, Alberta, Canada 
Area:
Organic Chemistry, Molecular Chemistry
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Stevenson JM, Ampong E, Shi Y. Understanding the Reaction Chemistry of 1,1,3,3-Tetramethyldisilazane as a Precursor Gas in a Catalytic Chemical Vapor Deposition Process. The Journal of Physical Chemistry. A. PMID 37882654 DOI: 10.1021/acs.jpca.3c04761  0.497
2022 Yadav A, Stevenson J, Ampong E, Shi Y. Theoretical Study on the Decomposition Kinetics and Thermochemistry of Tetramethyldisilazane and Hexamethyldisilazane─Formation of Silanimine and Silene Species. The Journal of Physical Chemistry. A. PMID 36315958 DOI: 10.1021/acs.jpca.2c05349  0.454
2021 Stevenson JM, Shi Y. Theoretical Study of Decomposition Kinetics and Thermochemistry of Bis(dimethylamino)silane-Formation of Methyleneimine and Silanimine Species. The Journal of Physical Chemistry. A. 125: 8175-8186. PMID 34515485 DOI: 10.1021/acs.jpca.1c04940  0.424
2019 Badran I, Rauk A, Shi Y. New Orbital Symmetry Allowed Route for Cycloreversion of Silacyclobutane and Its Methyl Derivatives. The Journal of Physical Chemistry. A. PMID 30735382 DOI: 10.1021/Acs.Jpca.8B08071  0.353
2019 Owusu-Ansah E, Rajendran A, Shi Y. Catalytic dissociation of tris(dimethylamino)silane on hot tungsten and tantalum filament surfaces. Physical Chemistry Chemical Physics : Pccp. PMID 30714585 DOI: 10.1039/C8Cp06669H  0.515
2018 Fulton AJ, Kollath VO, Karan K, Shi Y. Macroporous silicon formation by electrochemical anodization of n-type silicon without illumination Journal of Applied Physics. 124: 095701. DOI: 10.1063/1.5041373  0.336
2017 Badran I, Shi Y. A kinetic study of the gas-phase reactions of 1-methylsilacyclobutane in hot wire chemical vapor deposition. Physical Chemistry Chemical Physics : Pccp. PMID 29170772 DOI: 10.1039/C7Cp06082C  0.479
2017 Owusu-Ansah E, Cairns E, Shi Y. Characterization of Si atomic transitions using pulsed electric discharge and resonance-enhanced multiphoton ionization techniques Journal of Analytical Atomic Spectrometry. 32: 2423-2432. DOI: 10.1039/C7Ja00275K  0.342
2017 Shi Y. Role of free-radical chain reactions and silylene chemistry in using methyl-substituted silane molecules in hot-wire chemical vapor deposition Thin Solid Films. 635: 42-47. DOI: 10.1016/J.Tsf.2016.12.007  0.599
2017 Shi Y, Badran I, Mulmi S. Crystalline tantalum carbide and ditungsten carbide formation via hot wire chemical vapor deposition using the precursor of 1-methylsilacyclobutane Surface and Coatings Technology. 326: 103-110. DOI: 10.1016/J.Surfcoat.2017.07.047  0.447
2016 Toukabri R, Shi Y. Hydrogen elimination from the dissociation of methyl-substituted silanes on tungsten and tantalum surfaces Canadian Journal of Chemistry. 94: 265-272. DOI: 10.1139/Cjc-2015-0166  0.748
2016 Shi Y, Tong L, Mulmi S. Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 34: 051517. DOI: 10.1116/1.4961932  0.442
2015 Shi Y. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds. Accounts of Chemical Research. 48: 163-73. PMID 25586211 DOI: 10.1021/Ar500241X  0.571
2015 Shi Y. Hot wire chemical vapor deposition chemistry in the gas phase and on the catalyst surface with organosilicon compounds Accounts of Chemical Research. 48: 163-173. DOI: 10.1021/ar500241x  0.493
2014 Toukabri R, Shi YJ. Dominance of silylene chemistry in the decomposition of monomethylsilane in the presence of a heated metal filament. The Journal of Physical Chemistry. A. 118: 3866-74. PMID 24821598 DOI: 10.1021/Jp502795U  0.781
2014 Toukabri R, Shi Y. Unraveling the complex chemistry using dimethylsilane as a precursor gas in hot wire chemical vapor deposition. Physical Chemistry Chemical Physics : Pccp. 16: 7896-906. PMID 24647875 DOI: 10.1039/C4Cp00275J  0.77
2013 Toukabri R, Alkadhi N, Shi YJ. Formation of methyl radicals from decomposition of methyl-substituted silanes over tungsten and tantalum filament surfaces. The Journal of Physical Chemistry. A. 117: 7697-704. PMID 23876080 DOI: 10.1021/Jp404882T  0.744
2013 Toukabri R, Shi Y. Effect of trimethylsilane pressure on hot-wire chemical vapor deposition chemistry using vacuum ultraviolet laser ionization mass spectrometry Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 061606. DOI: 10.1116/1.4825105  0.753
2013 Shi Y, Badran I, Tkalych A, Kan WH, Thangadurai V. Growth of crystalline tungsten carbides using 1,1,3,3-tetramethyl-1,3- disilacyclobutane on a heated tungsten filament Journal of Physical Chemistry C. 117: 3389-3395. DOI: 10.1021/Jp3112777  0.41
2013 Coclite AM, Shi Y, Gleason KK. Super-hydrophobic and oloephobic crystalline coatings by initiated Chemical Vapor Deposition Physics Procedia. 46: 56-61. DOI: 10.1016/J.Phpro.2013.07.045  0.307
2012 Coclite AM, Shi Y, Gleason KK. Controlling the degree of crystallinity and preferred crystallographic orientation in poly-perfluorodecylacrylate thin films by initiated chemical vapor deposition Advanced Functional Materials. 22: 2167-2176. DOI: 10.1002/Adfm.201103035  0.35
2011 Shi YJ, Li XM, Toukabri R, Tong L. Effect of Si-H bond on the gas-phase chemistry of trimethylsilane in the hot wire chemical vapor deposition process. The Journal of Physical Chemistry. A. 115: 10290-8. PMID 21834557 DOI: 10.1021/Jp203966H  0.786
2011 Sveen CE, Shi Y. Effect of filament temperature and deposition time on the formation of tungsten silicide with silane Thin Solid Films. 519: 4447-4450. DOI: 10.1016/J.Tsf.2011.01.327  0.413
2009 Liu Y, Consta S, Shi Y, Lipson RH, Goddard WA. Prediction of the size distributions of methanol-ethanol clusters detected in VUV laser/time-of-flight mass spectrometry. The Journal of Physical Chemistry. A. 113: 6865-75. PMID 19489603 DOI: 10.1021/Jp900487X  0.315
2009 Tong L, Shi Y. A mechanistic study of gas-phase reactions with 1,1,3,3-tetramethyl-1,3-disilacyclobutane in the hot-wire chemical vapor deposition process Thin Solid Films. 517: 3461-3465. DOI: 10.1016/J.TSF.2009.01.058  0.405
2008 Shi Y, Li X, Tong L, Toukabri R, Eustergerling B. Decomposition of hexamethyldisilane on a hot tungsten filament and gas-phase reactions in a hot-wire chemical vapor deposition reactor. Physical Chemistry Chemical Physics : Pccp. 10: 2543-51. PMID 18446255 DOI: 10.1039/B718743B  0.765
2008 Eustergerling BD, Shi Y. Formation of aminosilanes in the hot-wire chemical vapor deposition process using SiH4-NH3 gas mixtures Arkivoc. 2009. DOI: 10.3998/Ark.5550190.0010.508  0.556
2008 Tong L, Sveen CE, Shi Y. Study of tungsten filament aging in hot-wire chemical vapor deposition with silacyclobutane as a source gas and the H2 etching effect Journal of Applied Physics. 103: 123534. DOI: 10.1063/1.2949278  0.473
2008 Shi Y, Eustergerling B, Li X. Mass spectrometric study of gas-phase chemistry in the hot-wire CVD processes of SiH4/NH3 mixtures Thin Solid Films. 516: 506-510. DOI: 10.1016/J.TSF.2007.06.029  0.311
2007 Eustergerling B, Hèden M, Shi Y. Application of laser induced electron impact ionization to the deposition chemistry in the hot-wire chemical vapor deposition process with SiH4-NH3 gas mixtures. Journal of the American Society For Mass Spectrometry. 18: 1950-8. PMID 17869128 DOI: 10.1016/J.Jasms.2007.08.012  0.463
2007 Li X, Eustergerling B, Shi Y. Mass spectrometric study of gas-phase chemistry in a hot-wire chemical vapor deposition reactor with tetramethylsilane International Journal of Mass Spectrometry. 263: 233-242. DOI: 10.1016/J.IJMS.2007.02.051  0.34
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