| Year |
Citation |
Score |
| 2020 |
Seol M, Lee MH, Kim H, Shin KW, Cho Y, Jeon I, Jeong M, Lee HI, Park J, Shin HJ. High-Throughput Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenide via Vertical Ostwald Ripening. Advanced Materials (Deerfield Beach, Fla.). e2003542. PMID 32935911 DOI: 10.1002/Adma.202003542 |
0.375 |
|
| 2019 |
Xu R, Jang H, Lee MH, Amanov D, Cho Y, Kim H, Park S, Shin HJ, Ham D. Vertical MoS double layer memristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100 mV. Nano Letters. PMID 30896171 DOI: 10.1021/Acs.Nanolett.8B05140 |
0.363 |
|
| 2019 |
Cho S, Kim M, Kim M, Lee M, Kim K. Effect of Cu surface treatment in graphene growth by chemical vapor deposition Materials Letters. 236: 403-407. DOI: 10.1016/J.Matlet.2018.10.134 |
0.495 |
|
| 2018 |
Lee MH, Cho Y, Byun KE, Shin KW, Nam S, Kim C, Kim H, Han SA, Kim SW, Shin HJ, Park S. Two-dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor Device Contacts. Nano Letters. PMID 30036065 DOI: 10.1021/Acs.Nanolett.8B01509 |
0.332 |
|
| 2016 |
Lee Y, Jeon W, Cho Y, Lee MH, Jeong SJ, Park J, Park S. Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors. Acs Nano. PMID 27355098 DOI: 10.1021/Acsnano.6B01734 |
0.322 |
|
| 2016 |
Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors. Scientific Reports. 6: 20907. PMID 26861833 DOI: 10.1038/Srep20907 |
0.353 |
|
| 2015 |
Lim MC, Lee MH, Kim KB, Jeon TJ, Kim YR. A Mask-Free Passivation Process for Low Noise Nanopore Devices. Journal of Nanoscience and Nanotechnology. 15: 5971-7. PMID 26369183 DOI: 10.1166/Jnn.2015.10500 |
0.562 |
|
| 2015 |
Cho SJ, Cho CH, Kim KB, Lee MH, Kim JH, Lee S, Cho J, Jung S, Kim DM, Shim YB. Interference Reduction in Glucose Detection by Redox Potential Tuning: New Glucose Meter Development. Analytical Sciences : the International Journal of the Japan Society For Analytical Chemistry. 31: 705-10. PMID 26165295 DOI: 10.2116/analsci.31.705 |
0.403 |
|
| 2014 |
Lee MH, Kumar A, Park KB, Cho SY, Kim HM, Lim MC, Kim YR, Kim KB. A low-noise solid-state nanopore platform based on a highly insulating substrate. Scientific Reports. 4: 7448. PMID 25502421 DOI: 10.1038/Srep07448 |
0.598 |
|
| 2014 |
Lee MH, Lee JH, Kim HM, Kim YR, Jeon TJ, Eugene Pak Y, Kim KB. Leakage current in a Si-based nanopore structure and its influence on noise characteristics Microfluidics and Nanofluidics. 16: 123-130. DOI: 10.1007/S10404-013-1192-Y |
0.539 |
|
| 2013 |
Cho S, Kim K, Kim H, Lee D, Lee M, Kim K. Gas transport controlled synthesis of graphene by employing a micro-meter scale gap jig Rsc Advances. 3: 26376. DOI: 10.1039/C3Ra43066A |
0.657 |
|
| 2012 |
Cho SY, Kim HM, Lee MH, Lee DJ, Kim KB. Single-step formation of a graphene-metal hybrid transparent and electrically conductive film. Nanotechnology. 23: 115301. PMID 22383433 DOI: 10.1088/0957-4484/23/11/115301 |
0.667 |
|
| 2012 |
Lee M, Kim H, Lee H, Nam S, Park W, Kim K. Electrical Properties of Silicon Nanowire Fabricated by Patterning and Oxidation Process Ieee Transactions On Nanotechnology. 11: 565-569. DOI: 10.1109/Tnano.2012.2186150 |
0.33 |
|
| 2012 |
Cho S, Kim H, Lee M, Lee D, Kim K. Direct formation of graphene layers on top of SiC during the carburization of Si substrate Current Applied Physics. 12: 1088-1091. DOI: 10.1016/J.Cap.2012.01.013 |
0.658 |
|
| 2011 |
Kim HM, Lee MH, Kim KB. Theoretical and experimental study of nanopore drilling by a focused electron beam in transmission electron microscopy. Nanotechnology. 22: 275303. PMID 21597159 DOI: 10.1088/0957-4484/22/27/275303 |
0.492 |
|
| 2011 |
Lee M, Kim H, Cho S, Lim K, Park S, Jong Lee J, Kim K. Fabrication of ultra-high-density nanodot array patterns (∼3 Tbits/in.2) using electron-beam lithography Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 061602. DOI: 10.1116/1.3646469 |
0.59 |
|
| 2010 |
Nam SW, Lee MH, Lee SH, Lee DJ, Rossnagel SM, Kim KB. Sub-10-nm nanochannels by self-sealing and self-limiting atomic layer deposition. Nano Letters. 10: 3324-9. PMID 20687522 DOI: 10.1021/Nl100999E |
0.648 |
|
| 2009 |
Nam S, Rooks MJ, Yang JKW, Berggren KK, Kim H, Lee M, Kim K, Sim JH, Yoon DY. Contrast enhancement behavior of hydrogen silsesquioxane in a salty developer Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 27: 2635. DOI: 10.1116/1.3245991 |
0.47 |
|
| 2007 |
Nam S, Lee T, Wi J, Lee D, Lee H, Jin K, Lee M, Kim H, Kim K. Electron-Beam Lithography Patterning of Ge[sub 2]Sb[sub 2]Te[sub 5] Nanostructures Using Hydrogen Silsesquioxane and Amorphous Si Intermediate Layer Journal of the Electrochemical Society. 154: H844. DOI: 10.1149/1.2756992 |
0.57 |
|
| 2007 |
Ahn D, Lee T, Lee D, Yim S, Wi J, Jin K, Lee M, Kim K, Kang D, Jeong H, Cheong B. High Speed Phase Change Random Access Memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1Complete Solid Solution Japanese Journal of Applied Physics. 46: 5719-5723. DOI: 10.1143/Jjap.46.5719 |
0.493 |
|
| 2006 |
Kim KB, Lee MH, Sok SR. [The effect of music therapy on anxiety and depression in patients undergoing hemodialysis]. Taehan Kanho Hakhoe Chi. 36: 321-9. PMID 16691049 |
0.381 |
|
| 2006 |
Lee T, Yim S, Lee D, Lee M, Ahn D, Kim K. Separate domain formation in Ge2Sb2Te5–SiOx mixed layer Applied Physics Letters. 89: 163503. DOI: 10.1063/1.2362981 |
0.51 |
|
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