| Year |
Citation |
Score |
| 2023 |
Kim BJ, Bonacchini GE, Ostrovsky-Snider NA, Omenetto FG. Bimodal Gating Mechanism in Hybrid Thin-Film Transistors Based on Dynamically Reconfigurable Nanoscale Biopolymer Interfaces. Advanced Materials (Deerfield Beach, Fla.). e2302062. PMID 37640508 DOI: 10.1002/adma.202302062 |
0.48 |
|
| 2022 |
Wang Y, Kim BJ, Guidetti G, Omenetto FG. Generation of Complex Tunable Multispectral Signatures with Reconfigurable Protein-Based, Plasmonic-Photonic Crystal Hybrid Nanostructures. Small (Weinheim An Der Bergstrasse, Germany). e2201036. PMID 35527342 DOI: 10.1002/smll.202201036 |
0.41 |
|
| 2021 |
Wang Y, Li M, Chang JK, Aurelio D, Li W, Kim BJ, Kim JH, Liscidini M, Rogers JA, Omenetto FG. Light-activated shape morphing and light-tracking materials using biopolymer-based programmable photonic nanostructures. Nature Communications. 12: 1651. PMID 33712607 DOI: 10.1038/s41467-021-21764-6 |
0.397 |
|
| 2019 |
Wang Y, Kim BJ, Peng B, Li W, Wang Y, Li M, Omenetto FG. Controlling silk fibroin conformation for dynamic, responsive, multifunctional, micropatterned surfaces. Proceedings of the National Academy of Sciences of the United States of America. PMID 31591247 DOI: 10.1073/Pnas.1911563116 |
0.43 |
|
| 2019 |
Yu K, Jeon J, Kim J, Oh CW, Yoon Y, Kim BJ, Cho JH, Choi EJ. Infrared study of carrier scattering mechanism in ion-gated graphene Applied Physics Letters. 114: 083503. DOI: 10.1063/1.5087302 |
0.504 |
|
| 2016 |
Kim JS, Kim BJ, Choi YJ, Lee MH, Kang MS, Cho JH. An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes. Advanced Materials (Deerfield Beach, Fla.). PMID 27071794 DOI: 10.1002/Adma.201505378 |
0.534 |
|
| 2016 |
Kim H, Kim BJ, Sun Q, Kang MS, Cho JH. Graphene Transistors Gated by Salted Proton Conductor Advanced Electronic Materials. 2. DOI: 10.1002/Aelm.201600122 |
0.554 |
|
| 2015 |
Kim BJ, Hwang E, Kang MS, Cho JH. Transistors: Electrolyte-Gated Graphene Schottky Barrier Transistors (Adv. Mater. 39/2015). Advanced Materials (Deerfield Beach, Fla.). 27: 5849. PMID 26466929 DOI: 10.1002/Adma.201570258 |
0.546 |
|
| 2015 |
Kim BJ, Hwang E, Kang MS, Cho JH. Electrolyte-Gated Graphene Schottky Barrier Transistors. Advanced Materials (Deerfield Beach, Fla.). PMID 26315936 DOI: 10.1002/Adma.201502020 |
0.556 |
|
| 2015 |
Sun Q, Seung W, Kim BJ, Seo S, Kim SW, Cho JH. Active Matrix Electronic Skin Strain Sensor Based on Piezopotential-Powered Graphene Transistors. Advanced Materials (Deerfield Beach, Fla.). 27: 3411-7. PMID 25914310 DOI: 10.1002/adma.201500582 |
0.465 |
|
| 2015 |
Lee MH, Kim BJ, Lee KH, Shin IS, Huh W, Cho JH, Kang MS. Apparent pH sensitivity of solution-gated graphene transistors. Nanoscale. 7: 7540-4. PMID 25850005 DOI: 10.1039/C5Nr00414D |
0.489 |
|
| 2014 |
Cho I, Kim BJ, Ryu SW, Cho JH, Cho J. Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array. Nanotechnology. 25: 505604. PMID 25426661 DOI: 10.1088/0957-4484/25/50/505604 |
0.455 |
|
| 2014 |
Kim BJ, Um SH, Song WC, Kim YH, Kang MS, Cho JH. Water-gel for gating graphene transistors. Nano Letters. 14: 2610-6. PMID 24773325 DOI: 10.1021/nl500446s |
0.514 |
|
| 2014 |
Lee SK, Kabir SM, Sharma BK, Kim BJ, Cho JH, Ahn JH. Photo-patternable ion gel-gated graphene transistors and inverters on plastic. Nanotechnology. 25: 014002. PMID 24334373 DOI: 10.1088/0957-4484/25/1/014002 |
0.555 |
|
| 2013 |
Yu SH, Kim BJ, Kang MS, Kim SH, Han JH, Lee JY, Cho JH. In/Ga-free, inkjet-printed charge transfer doping for solution-processed ZnO. Acs Applied Materials & Interfaces. 5: 9765-9. PMID 24033188 DOI: 10.1021/Am402919F |
0.486 |
|
| 2013 |
Kim BJ, Ko Y, Cho JH, Cho J. Organic field-effect transistor memory devices using discrete ferritin nanoparticle-based gate dielectrics. Small (Weinheim An Der Bergstrasse, Germany). 9: 3784-91. PMID 23666682 DOI: 10.1002/Smll.201300522 |
0.475 |
|
| 2013 |
Min SY, Kim TS, Kim BJ, Cho H, Noh YY, Yang H, Cho JH, Lee TW. Large-scale organic nanowire lithography and electronics. Nature Communications. 4: 1773. PMID 23653185 DOI: 10.1038/Ncomms2785 |
0.484 |
|
| 2013 |
Park SY, Kim K, Lim K, Kim Bj, Lee E, Cho JH, Kim YS. The structural, optical and electrical characterization of high-performance, low-temperature and solution-processed alkali metal-doped ZnO TFTs Journal of Materials Chemistry C. 1: 1383. DOI: 10.1039/C2TC00559J |
0.455 |
|
| 2013 |
Kim BJ, Yu H, Oh JH, Kang MS, Cho JH. Electrical Transport through Single Nanowires of Dialkyl Perylene Diimide The Journal of Physical Chemistry C. 117: 10743-10749. DOI: 10.1021/Jp400807T |
0.424 |
|
| 2013 |
Kim BJ, Lee HS, Lee JS, Cho S, Kim H, Son HJ, Ko MJ, Park S, Kang MS, Oh SY, Kim B, Cho JH. Correlation between crystallinity, charge transport, and electrical stability in an ambipolar polymer field-effect transistor based on poly(naphthalene- alt -diketopyrrolopyrrole) Journal of Physical Chemistry C. 117: 11479-11486. DOI: 10.1021/Jp400664R |
0.464 |
|
| 2012 |
Joo P, Kim BJ, Jeon EK, Cho JH, Kim BS. Optical switching of the Dirac point in graphene multilayer field-effect transistors functionalized with spiropyran. Chemical Communications (Cambridge, England). 48: 10978-80. PMID 23032739 DOI: 10.1039/C2Cc35933B |
0.51 |
|
| 2012 |
Kim BJ, Lee SK, Kang MS, Ahn JH, Cho JH. Coplanar-gate transparent graphene transistors and inverters on plastic. Acs Nano. 6: 8646-51. PMID 22954200 DOI: 10.1021/Nn3020486 |
0.555 |
|
| 2012 |
Park SY, Kim BJ, Kim K, Kang MS, Lim KH, Lee TI, Myoung JM, Baik HK, Cho JH, Kim YS. Low-Temperature, solution-processed and alkali metal doped ZnO for high-performance thin-film transistors. Advanced Materials (Deerfield Beach, Fla.). 24: 834-8. PMID 22228295 DOI: 10.1002/Adma.201103173 |
0.5 |
|
| 2012 |
Han JT, Jang JI, Jeong BH, Kim BJ, Jeong SY, Jeong HJ, Cho JH, Lee GW. Spontaneous reduction and dispersion of graphene nano-platelets with in situ synthesized hydrazine assisted by hexamethyldisilazane Journal of Materials Chemistry. 22: 20477-20481. DOI: 10.1039/c2jm34691e |
0.491 |
|
| 2012 |
Kim BJ, Park YI, Kim HJ, Ahn K, Lee DR, Kim DH, Oh SY, Park JW, Cho JH. Crystalline nanostructure and morphology of TriF-IF-dione for high-performance stable n-type field-effect transistors Journal of Materials Chemistry. 22: 14617-14623. DOI: 10.1039/c2jm31698f |
0.452 |
|
| 2012 |
Lee HS, Kang MS, Kang SK, Kim BJ, Yoo Y, Lim HS, Um SH, Ryu DY, Lee DR, Cho JH. Surface viscoelasticity of an organic interlayer affects the crystalline nanostructure of an organic semiconductor and its electrical performance Journal of Physical Chemistry C. 116: 21673-21678. DOI: 10.1021/Jp305820R |
0.423 |
|
| 2011 |
Han JT, Kim BJ, Kim BG, Kim JS, Jeong BH, Jeong SY, Jeong HJ, Cho JH, Lee GW. Enhanced electrical properties of reduced graphene oxide multilayer films by in-situ insertion of a TiO2 layer. Acs Nano. 5: 8884-91. PMID 22017193 DOI: 10.1021/nn203054t |
0.51 |
|
| 2011 |
Lee SK, Kim BJ, Jang H, Yoon SC, Lee C, Hong BH, Rogers JA, Cho JH, Ahn JH. Stretchable graphene transistors with printed dielectrics and gate electrodes. Nano Letters. 11: 4642-6. PMID 21973013 DOI: 10.1021/Nl202134Z |
0.556 |
|
| 2011 |
Kim BJ, Kang MS, Pham VH, Cuong TV, Kim EJ, Chung JS, Hur SH, Cho JH. Low-voltage solution-processed graphene transistors based on chemically and solvothermally reduced graphene oxide Journal of Materials Chemistry. 21: 13068-13073. DOI: 10.1039/C1Jm11691F |
0.541 |
|
| 2011 |
Park Y, Lee JS, Kim BJ, Kim B, Lee J, Kim DH, Oh S, Cho JH, Park J. High-Performance Stablen-Type Indenofluorenedione Field-Effect Transistors Chemistry of Materials. 23: 4038-4044. DOI: 10.1021/CM2016824 |
0.438 |
|
| 2010 |
Kim BJ, Jang H, Lee SK, Hong BH, Ahn JH, Cho JH. High-performance flexible graphene field effect transistors with ion gel gate dielectrics. Nano Letters. 10: 3464-6. PMID 20704323 DOI: 10.1021/Nl101559N |
0.572 |
|
| 2010 |
Bong H, Lee WH, Lee DY, Kim BJ, Cho JH, Cho K. High-mobility low-temperature ZnO transistors with low-voltage operation Applied Physics Letters. 96: 192115. DOI: 10.1063/1.3428357 |
0.605 |
|
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