☰

Kangguo Cheng, Ph.D. - Publications

Affiliations: 
2001 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
scanning tunneling microscopy, nanofabrication, nanoelectronics, and IC chip reliability
Tree Info Similar researchers PubMed Report error

17 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2003 Cheng K, Lyding JW. Corrections to "An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps" Ieee Electron Device Letters. 24: 710-710. DOI: 10.1109/Led.2003.820017  0.315
2003 Cheng K, Lyding JW. An Analytical Model to Project MOS Transistor Lifetime Improvement by Deuterium Passivation of Interface Traps Ieee Electron Device Letters. 24: 655-657. DOI: 10.1109/Led.2003.817377  0.565
2003 Cheng K, Lyding JW. Hot-carrier stress effects on gate-induced-drain leakage current in n-channel MOSFETs studied by hydrogen/deuterium isotope effect Ieee Electron Device Letters. 24: 487-489. DOI: 10.1109/Led.2003.815003  0.586
2002 Cheng K, Lee J, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Improved hot-carrier reliability of SOI transistors by deuterium passivation of defects at oxide/silicon interfaces Ieee Transactions On Electron Devices. 49: 529-531. DOI: 10.1109/16.987128  0.623
2001 Cheng K, Lee J, Chen Z, Shah SA, Hess K, Leburton JP, Lyding JW. Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1119-1123. DOI: 10.1116/1.1385687  0.58
2001 Cheng K, Hess K, Lyding JW. Deuterium passivation of interface traps in MOS devices Ieee Electron Device Letters. 22: 441-443. DOI: 10.1109/55.944333  0.593
2001 Chen Z, Cheng K, Lee J, Lyding JW, Hess K, Chetlur S. Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: A comparison study Ieee Transactions On Electron Devices. 48: 813-815. DOI: 10.1109/16.915732  0.527
2001 Hess K, Haggag A, McMahon W, Cheng K, Lee J, Lyding J. The physics of determining chip reliability Ieee Circuits and Devices Magazine. 17: 33-38. DOI: 10.1109/101.933789  0.519
2001 Cheng K, Hess K, Lyding JW. Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces Journal of Applied Physics. 90: 6536-6538. DOI: 10.1063/1.1412265  0.579
2001 Cheng K, Leburton JP, Hess K, Lyding JW. On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal-oxide-semiconductor field-effect transistors Applied Physics Letters. 79: 863-865. DOI: 10.1063/1.1389318  0.601
2001 Cheng K, Lee J, Hess K, Lyding JW. Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Applied Physics Letters. 78: 1882-1884. DOI: 10.1063/1.1359143  0.608
2001 Cheng K, Lee J, Chen Z, Shah S, Hess K, Lyding JW, Kim YK, Kim YW, Suh KP. Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices Microelectronic Engineering. 56: 353-358. DOI: 10.1016/S0167-9317(01)00572-X  0.558
2000 Jinju L, Cheng K, Chen Z, Hess K, Lyding JW, Young-Kwang K, Seung L, Young-Wug K, Kwang-Pyuk S. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors Ieee Electron Device Letters. 21: 221-223. DOI: 10.1109/55.841302  0.558
2000 Cheng K, Lee J, Lyding JW. Experimental evidence of Si-H bond energy variation at SiO2-Si interface Applied Physics Letters. 77: 3388-3390. DOI: 10.1063/1.1327277  0.345
2000 Cheng K, Lee J, Lyding JW. Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices Applied Physics Letters. 77: 2358-2360. DOI: 10.1063/1.1317546  0.423
1993 Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng K. Structure of GaAs(100)-c(8 x 2) determined by scanning tunneling microscopy. Physical Review. B, Condensed Matter. 48: 9138-9141. PMID 10007140  0.42
1993 Skala SL, Hubacek JS, Tucker JR, Lyding JW, Chou ST, Cheng KY. Structure of GaAs(100)-c(8×2) determined by scanning tunneling microscopy Physical Review B. 48: 9138-9141. DOI: 10.1103/PhysRevB.48.9138  0.447
Show low-probability matches.