Year |
Citation |
Score |
2010 |
Dai M, Kwon J, Halls MD, Gordon RG, Chabal YJ. Surface and interface processes during atomic layer deposition of copper on silicon oxide. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 3911-7. PMID 20092316 DOI: 10.1021/La903212C |
0.506 |
|
2010 |
Michalak DJ, Amy SR, Aureau D, Dai M, Estève A, Chabal YJ. Nanopatterning Si(111) surfaces as a selective surface-chemistry route. Nature Materials. 9: 266-71. PMID 20062049 DOI: 10.1038/Nmat2611 |
0.506 |
|
2010 |
Kwon J, Dai M, Halls MD, Chabal YJ. Suppression of substrate oxidation during ozone based atomic layer deposition of Al2 O3: Effect of ozone flow rate Applied Physics Letters. 97. DOI: 10.1063/1.3500821 |
0.526 |
|
2009 |
Seitz O, Dai M, Aguirre-Tostado FS, Wallace RM, Chabal YJ. Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices. Journal of the American Chemical Society. 131: 18159-67. PMID 19924992 DOI: 10.1021/Ja907003W |
0.512 |
|
2009 |
Dai M, Wang Y, Kwon J, Halls MD, Chabal YJ. Nitrogen interaction with hydrogen-terminated silicon surfaces at the atomic scale. Nature Materials. 8: 825-30. PMID 19684585 DOI: 10.1038/Nmat2514 |
0.517 |
|
2009 |
Li M, Dai M, Chabal YJ. Atomic layer deposition of aluminum oxide on carboxylic acid-terminated self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 1911-4. PMID 19140733 DOI: 10.1021/La803581K |
0.511 |
|
2009 |
Dai M, Kwon J, Chabal YJ, Halls MD, Gordon RG. FTIR study of copper agglomeration during atomic layer deposition of copper Mrs Proceedings. 1155. DOI: 10.1557/Proc-1155-C11-06 |
0.524 |
|
2009 |
Kwon J, Dai M, Halls MD, Langereis E, Chabal YJ, Gordon RG. In situ infrared characterization during atomic layer deposition of lanthanum oxide Journal of Physical Chemistry C. 113: 654-660. DOI: 10.1021/Jp806027M |
0.521 |
|
2009 |
Dai M, Kwon J, Chabal YJ, Halls MD, Gordon RG. FTIR study of copper agglomeration during atomic layer deposition of copper Materials Research Society Symposium Proceedings. 1155: 41-46. |
0.428 |
|
2008 |
Kwon J, Dai M, Halls MD, Chabal YJ. Detection of a formate surface intermediate in the atomic layer deposition of high-k dielectrics using ozone Chemistry of Materials. 20: 3248-3250. DOI: 10.1021/Cm703667H |
0.506 |
|
2007 |
Dai M, Kwon J, Ho MT, Wang Y, Rivillon S, Li M, Chabal YJ, Boleslawski M. In-situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces Mrs Proceedings. 996. DOI: 10.1557/Proc-0996-H07-04 |
0.541 |
|
2007 |
Wang Y, Dai M, Ho MT, Wielunski LS, Chabal YJ. Infrared characterization of hafnium oxide grown by atomic layer deposition using ozone as the oxygen precursor Applied Physics Letters. 90. DOI: 10.1063/1.2430908 |
0.519 |
|
2006 |
Wang Y, Dai M, Ho MT, Rivillon S, Chabal YJ. In situ infrared absorption spectroscopy for thin film growth by atomic layer deposition Materials Research Society Symposium Proceedings. 967: 549-568. DOI: 10.1117/12.681331 |
0.507 |
|
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