| Year |
Citation |
Score |
| 2018 |
Fernando NS, Carrasco RA, Hickey R, Hart J, Hazbun R, Schoeche S, Hilfiker JN, Kolodzey J, Zollner S. Band gap and strain engineering of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs for photonic applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 21202. DOI: 10.1116/1.5001948 |
0.413 |
|
| 2018 |
Imbrenda D, Hickey R, Carrasco RA, Fernando NS, VanDerslice J, Zollner S, Kolodzey J. Infrared dielectric response, index of refraction, and absorption of germanium-tin alloys with tin contents up to 27% deposited by molecular beam epitaxy Applied Physics Letters. 113: 122104. DOI: 10.1063/1.5040853 |
0.437 |
|
| 2017 |
Hickey R, Fernando N, Zollner S, Hart J, Hazbun R, Kolodzey J. Properties of pseudomorphic and relaxed germanium1−xtinx alloys (x < 0.185) grown by MBE Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 21205. DOI: 10.1116/1.4975149 |
0.401 |
|
| 2017 |
Bhargava N, Gupta JP, Faleev N, Wielunski L, Kolodzey J. Thermal Stability of Annealed Germanium-Tin Alloys Grown by Molecular Beam Epitaxy Journal of Electronic Materials. 46: 1620-1627. DOI: 10.1007/S11664-016-5205-Y |
0.635 |
|
| 2016 |
Hart J, Adam T, Kim Y, Huang YC, Reznicek A, Hazbun R, Gupta J, Kolodzey J. Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11% Journal of Applied Physics. 119. DOI: 10.1063/1.4942851 |
0.47 |
|
| 2016 |
Hart J, Hazbun R, Eldridge D, Hickey R, Fernando N, Adam T, Zollner S, Kolodzey J. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys Thin Solid Films. 604: 23-27. DOI: 10.1016/J.Tsf.2016.03.010 |
0.42 |
|
| 2016 |
Zhang D, Hart J, Kolodzey J, Liao Y, Jin L, Fernando MN, Rao Y, Hong C. Microstructure and optoelectronic performance of SiGe/Si heterostructures Microelectronics Reliability. DOI: 10.1016/J.Microrel.2016.11.013 |
0.474 |
|
| 2016 |
Hazbun R, Hart J, Hickey R, Ghosh A, Fernando N, Zollner S, Adam TN, Kolodzey J. Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition Journal of Crystal Growth. 444: 21-27. DOI: 10.1016/J.Jcrysgro.2016.03.018 |
0.453 |
|
| 2016 |
Zhang D, Liao Y, Li J, Wen T, Jin L, Wang X, Kolodzey J. Effect of in-situ annealing on the structural and optical properties of GeSn films grown by MBE Journal of Alloys and Compounds. 684: 643-648. DOI: 10.1016/J.Jallcom.2016.05.238 |
0.387 |
|
| 2016 |
Zhang D, Jin L, Li J, Wen T, Liu C, Xu F, Kolodzey J, Liao Y. MBE growth of ultra-thin GeSn film with high Sn content and its infrared/terahertz properties Journal of Alloys and Compounds. 665: 131-136. DOI: 10.1016/J.Jallcom.2016.01.038 |
0.382 |
|
| 2016 |
Zhang D, Sun D, Wen Q, Wen T, Kolodzey J, Zhang H. Tuning the optical modulation of wideband terahertz waves by the gate voltage of graphene field effect transistors Composites Part B: Engineering. 89: 54-59. DOI: 10.1016/J.Compositesb.2015.10.049 |
0.343 |
|
| 2015 |
Zhang D, Ji L, Kolodzey J. Integration of microwave termination based on TaN thin films on ferrite substrates Epj Applied Physics. 72. DOI: 10.1051/Epjap/2015140497 |
0.317 |
|
| 2015 |
Hazbun R, Bhargava N, Rodriguez-Toro VA, Goossen K, Kolodzey J, Ram-Mohan LR, Aina L, Fathimulla A, Hier H. Theoretical study of the effects of strain balancing on the bandgap of dilute nitride InGaSbN/InAs superlattices on GaSb substrates Infrared Physics and Technology. 69: 211-217. DOI: 10.1016/J.Infrared.2015.01.023 |
0.614 |
|
| 2014 |
Kim S, Bhargava N, Gupta J, Coppinger M, Kolodzey J. Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy. Optics Express. 22: 11029-34. PMID 24921801 DOI: 10.1364/Oe.22.011029 |
0.813 |
|
| 2014 |
Kolodzey J. High power, high temperature terahertz emitters based on electronic processes in semiconductors International Conference On Fibre Optics and Photonics, 2014. DOI: 10.1364/Photonics.2014.M2B.2 |
0.346 |
|
| 2014 |
Bhargava N, Gupta JP, Adam T, Kolodzey J. Structural properties of boron-doped germanium-Tin alloys grown by molecular beam epitaxy Journal of Electronic Materials. 43: 931-937. DOI: 10.1007/S11664-014-3088-3 |
0.65 |
|
| 2013 |
Kolodzey J, Gupta JP. Terahertz emitters based on intracenter transitions in semiconductors Proceedings of Spie - the International Society For Optical Engineering. 8846. DOI: 10.1117/12.2024447 |
0.449 |
|
| 2013 |
Kim S, Gupta J, Bhargava N, Coppinger M, Kolodzey J. Current-voltage characteristics of GeSn/Ge heterojunction diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 34: 1217-1219. DOI: 10.1109/Led.2013.2278371 |
0.81 |
|
| 2013 |
Bhargava N, Coppinger M, Prakash Gupta J, Wielunski L, Kolodzey J. Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4816660 |
0.815 |
|
| 2013 |
Gupta JP, Bhargava N, Kim S, Adam T, Kolodzey J. Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4812747 |
0.681 |
|
| 2013 |
Coppinger M, Hart J, Bhargava N, Kim S, Kolodzey J. Photoconductivity of germanium tin alloys grown by molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800448 |
0.815 |
|
| 2013 |
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Kazimirov AY, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(0 0 1) and Ge(0 0 1) substrates: I - High-resolution x-ray diffraction and x-ray topography Journal of Crystal Growth. 365: 44-53. DOI: 10.1016/J.Jcrysgro.2012.12.002 |
0.801 |
|
| 2013 |
Faleev N, Sustersic N, Bhargava N, Kolodzey J, Magonov S, Smith DJ, Honsberg C. Structural investigations of SiGe epitaxial layers grown by molecular beam epitaxy on Si(001) and Ge(001) substrates: II - Transmission electron microscopy and atomic force microscopy Journal of Crystal Growth. 365: 35-43. DOI: 10.1016/J.Jcrysgro.2012.11.067 |
0.814 |
|
| 2011 |
Coppinger M, Sustersic NA, Kolodzey J, Allik TH. Sensitivity of a vanadium oxide uncooled microbolometer array for terahertz imaging Optical Engineering. 50. DOI: 10.1117/1.3574066 |
0.765 |
|
| 2011 |
Kolodzey J, Coppinger M, Kim S, Bhargava N, Gupta J, Ni C, Yeo YK. The properties of germanium-tin alloys for infrared device applications 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135273 |
0.577 |
|
| 2011 |
Antonova IV, Vinokurov PV, Smagulova SA, Kagan MS, Ray SK, Kolodzey J. Resonant tunneling in Si/SiGe/Si structures with a single quantum well under surface passivation Journal of Applied Physics. 110. DOI: 10.1063/1.3671058 |
0.479 |
|
| 2011 |
Shah LR, Bhargava N, Kim S, Stearrett R, Kou X, Sun X, Sun S, Kolodzey J, Nowak ER, Xiao JQ. Magnetic tunneling junction based magnetic field sensors: Role of shape anisotropy versus free layer thickness Journal of Applied Physics. 109. DOI: 10.1063/1.3563096 |
0.527 |
|
| 2010 |
Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and optical characterization of Germanium-rich islands on silicon grown by Molecular Beam Epitaxy Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fmh2 |
0.804 |
|
| 2010 |
Nataraj L, Sustersic N, Coppinger M, Gerlein LF, Kolodzey J, Cloutier SG. Structural and optoelectronic properties of germanium-rich islands grown on silicon using molecular beam epitaxy Applied Physics Letters. 96. DOI: 10.1063/1.3371759 |
0.814 |
|
| 2009 |
Antonova IV, Neustroev EP, Smagulova SA, Kagan MS, Alekseev PS, Ray SK, Sustersic N, Kolodzey J. Confinement levels in passivated SiGe/Si quantum well structures Solid State Phenomena. 156: 541-546. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.541 |
0.829 |
|
| 2009 |
Faleev N, Sustersic N, Bhargava N, Coppinger M, Kolodzey J. SiGe lattice-mismatched epitaxial heterostructures: Types and density of crystalline defects related to epitaxial growth conditions 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378083 |
0.546 |
|
| 2009 |
Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Structural and light-emission properties of bulk Germanium islands grown on Silicon using Molecular Beam Epitaxy Ieee International Conference On Group Iv Photonics Gfp. 190-192. DOI: 10.1109/GROUP4.2009.5338321 |
0.318 |
|
| 2009 |
Antonova IV, Neustroev EP, Smagulova SA, Kagan MS, Alekseev PS, Ray SK, Sustersic N, Kolodzey J. Deep-level spectroscopy studies of confinement levels in SiGe quantum wells Journal of Applied Physics. 106. DOI: 10.1063/1.3153974 |
0.806 |
|
| 2009 |
Sustersic N, Nataraj L, Weiland C, Coppinger M, Shaleev MV, Novikov AV, Opila R, Cloutier SG, Kolodzey J. Effects of boron and phosphorus doping on the photoluminescence of self-assembled germanium quantum dots Applied Physics Letters. 94. DOI: 10.1063/1.3114377 |
0.805 |
|
| 2009 |
Aina L, Hier H, Fathimulla A, Lecates M, Kolodzey J, Goossen K, Coppinger M, Bhargava N. High detectivity dilute nitride strained layer superlattice detectors for LWIR and VLWIR applications Infrared Physics and Technology. 52: 310-316. DOI: 10.1016/J.Infrared.2009.05.011 |
0.791 |
|
| 2009 |
Kagan M, Antonova I, Neustroev E, Smagulova S, Alekseev P, Ray S, Sustersic N, Kolodzey J. Confinement levels in SiGe quantum wells studied by charge spectroscopy Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2707-2709. DOI: 10.1002/Pssc.200982542 |
0.804 |
|
| 2009 |
Nataraj L, Sustersic N, Coppinger M, Gerlein F, Kolodzey J, Cloutier SG. Optoelectronic properties of Germanium islands formed on silicon using Stranski-Krastanov growth by MBE Optics Infobase Conference Papers. |
0.339 |
|
| 2008 |
Moriyama T, Cao R, Fan X, Xuan G, Nikoli? BK, Tserkovnyak Y, Kolodzey J, Xiao JQ. Tunnel barrier enhanced voltage signal generated by magnetization precession of a single ferromagnetic layer. Physical Review Letters. 100: 067602. PMID 18352517 DOI: 10.1103/Physrevlett.100.067602 |
0.558 |
|
| 2008 |
Xuan G, Adam TN, Lv PC, Sustersic N, Coppinger MJ, Kolodzey J, Suehle J, Fitzgerald E. Dry etching of SiGe alloys by xenon difluoride Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 385-388. DOI: 10.1116/1.2891245 |
0.787 |
|
| 2008 |
Xuan G, Lv PC, Zhang X, Kolodzey J, Desalvo G, Powell A. Silicon carbide terahertz emitting devices Journal of Electronic Materials. 37: 726-729. DOI: 10.1007/S11664-007-0371-6 |
0.664 |
|
| 2007 |
Kagan MS, Altukhov IV, Paprotskiy SK, Sinis VP, Yassievich IN, Kolodzey J. Transient characteristics of SiGe/Si QW structures at THz lasing International Journal of Nanoscience. 6: 279-282. DOI: 10.1142/S0219581X07004729 |
0.366 |
|
| 2007 |
Xuan G, Ghosh S, Kim S, Lv PC, Buma T, Weng B, Bamer K, Kolodzey J. Terahertz sensing of materials International Journal of High Speed Electronics and Systems. 17: 121-126. DOI: 10.1142/9789812770332_0020 |
0.526 |
|
| 2007 |
Sustersic N, Kim S, Lv PC, Coppinger M, Troeger T, Kolodzey J. Terahertz emission from electrically pumped silicon germanium evtersubband devices International Journal of High Speed Electronics and Systems. 17: 115-120. DOI: 10.1142/9789812770332_0019 |
0.8 |
|
| 2007 |
Adam TN, Kim S, Lv PC, Xuan G, Ray SK, Troeger RT, Prather D, Kolodzey J. Cyclic deep reactive ion etching with mask replenishment Journal of Micromechanics and Microengineering. 17: 1773-1780. DOI: 10.1088/0960-1317/17/9/004 |
0.787 |
|
| 2007 |
Sturm J, Fitzgerald E, Koester S, Kolodzey J, Muroto J, Paul D, Tillack B, Zaima S, Ghyselen B, Takagi S. Papers from the 3rd international SiGe technology and device meeting (Princeton, New Jersey, USA, 15-17 May 2006) (ISTDM 2006) Semiconductor Science and Technology. 22. DOI: 10.1088/0268-1242/22/1/E01 |
0.397 |
|
| 2007 |
Antonova IV, Soots RA, Guliaev MB, Prinz VY, Kagan MS, Kolodzey J. Electrical passivation of SiSiGeSi structures by 1-octadecene monolayers Applied Physics Letters. 91. DOI: 10.1063/1.2775083 |
0.397 |
|
| 2007 |
Xuan G, Kim S, Coppinger M, Sustersic N, Kolodzey J, Lv PC. Increasing the operating temperature of boron doped silicon terahertz electroluminescence devices Applied Physics Letters. 91. DOI: 10.1063/1.2768195 |
0.8 |
|
| 2007 |
Kagan MS, Altukhov IV, Sinis VP, Paprotskly SK, Yassievich IN, Kolodzey J. Carrier injection as a cause of THz lasing excitation in SiGe/Si QW structures Physica Status Solidi (B) Basic Research. 244: 192-196. DOI: 10.1002/Pssb.200672548 |
0.401 |
|
| 2006 |
Kagan MS, Altukhov IV, Sinis VP, Chirkova EG, Paprotskiy SK, Yassievich IN, Odnoblyudov MA, Prokofiev AA, Kolodzey J. Stimulated THz emission of strained p-Ge and SiGe/Si quantum-well structures doped with shallow acceptors Ecs Transactions. 3: 745-757. DOI: 10.1149/1.2355869 |
0.305 |
|
| 2006 |
Weng B, Xuan G, Kolodzey J, Barner KE. Empirical mode decomposition as a tool for DNA sequence analysis from terahertz spectroscopy measurements 2006 Ieee International Workshop On Genomic Signal Processing and Statistics, Gensips 2006. 63-64. DOI: 10.1109/GENSIPS.2006.353157 |
0.459 |
|
| 2006 |
Guangchi X, Adam TN, Suehle J, Fitzgerald E, Lv P, Sustersic N, Coppinger MJ, Kolodzey J. Xenon Difluoride dry etching of Si, SiGe alloy and Ge Third International Sige Technology and Device Meeting, Istdm 2006 - Conference Digest. 2006. |
0.81 |
|
| 2005 |
Antonova IV, Golik LL, Kagan MS, Polyakov VI, Rukavischnikov AI, Rossukanyi NM, Kolodzey J. Quantum well related conductivity and deep traps in SiGe/Si structures Solid State Phenomena. 108: 489-494. DOI: 10.4028/Www.Scientific.Net/Ssp.108-109.489 |
0.469 |
|
| 2005 |
Lv P, Kolodzey J, Thomas RT, Kim S, Ray SK. The emission of Terahertz radiation from doped silicon devices Materials Research Society Symposium Proceedings. 832: 81-89. DOI: 10.1557/Proc-832-F4.3 |
0.441 |
|
| 2005 |
Antonova IV, Obodnikov VI, Kagan MS, Troeger RT, Ray SK, Kolodzey J. Capacitance study of selectively doped SiGe/Si heterostructures Semiconductor Science and Technology. 20: 335-339. DOI: 10.1088/0268-1242/20/5/001 |
0.794 |
|
| 2005 |
Lv PC, Zhang X, Kolodzey J, Powell A. Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142294 |
0.383 |
|
| 2005 |
Lv PC, Zhang X, Kolodzey J, Odnoblyudov MA, Yassievich IN. The effects of uniaxial compressive stress on the terahertz emission from phosphorus-doped silicon devices Journal of Applied Physics. 98. DOI: 10.1063/1.2132516 |
0.363 |
|
| 2005 |
Lv PC, Troeger RT, Zhang X, Adam TN, Kolodzey J, Odnoblyudov MA, Yassievich IN. Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters Journal of Applied Physics. 98. DOI: 10.1063/1.2128045 |
0.755 |
|
| 2005 |
Xuan G, Kolodzey J, Kapoor V, Gonye G. Characteristics of field-effect devices with gate oxide modification by DNA Applied Physics Letters. 87. DOI: 10.1063/1.2041826 |
0.59 |
|
| 2005 |
Antonova IV, Kagan MS, Polyakov VI, Golik LL, Kolodzey J. Effect of interface states on population of quantum wells in SiGe/Si structures Physica Status Solidi C: Conferences. 2: 1924-1928. DOI: 10.1002/Pssc.200460526 |
0.415 |
|
| 2004 |
Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Yassievich I, Odnoblyudov M, Kagan M. Terahertz emitters and detectors based on SiGe nanostructures International Journal of Nanoscience. 3: 171-176. DOI: 10.1142/S0219581X0400195X |
0.801 |
|
| 2004 |
Xuan G, Kolodzey J, Kapoor V, Gonye G. Electrical effects of DNA molecules on silicon field effect transistor International Journal of High Speed Electronics and Systems. 14: 684-689. DOI: 10.1142/S0129156404002673 |
0.554 |
|
| 2004 |
Troeger RT, Adam TN, Ray SK, Lv PC, Kim S, Kolodzey J. Temperature dependence of terahertz emission from silicon devices doped with boron International Journal of High Speed Electronics and Systems. 14: 670-675. DOI: 10.1142/S012915640400265X |
0.782 |
|
| 2004 |
Lv PC, Troeger RT, Kim S, Ray SK, Goossen KW, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Terahertz emission from electrically pumped gallium doped silicon devices Applied Physics Letters. 85: 3660-3662. DOI: 10.1063/1.1808878 |
0.774 |
|
| 2004 |
Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741 |
0.787 |
|
| 2004 |
Lv PC, Troeger RT, Adam TN, Kim S, Kolodzey J, Yassievich IN, Odnoblyudov MA, Kagan MS. Electroluminescence at 7 terahertz from phosphorus donors in silicon Applied Physics Letters. 85: 22-24. DOI: 10.1063/1.1769589 |
0.783 |
|
| 2004 |
Ray SK, Adam TN, Troeger RT, Kolodzey J, Looney G, Rosen A. Characteristics of THz waves and carrier scattering in boron-doped epitaxial Si and Si 1-xGe x films Journal of Applied Physics. 95: 5301-5304. DOI: 10.1063/1.1690487 |
0.803 |
|
| 2004 |
Kolodzey J, Lv P, Troeger RT, Kim S. Terahertz emitting devices based on dopant transitions in silicon 2004 1st Ieee International Conference On Group Iv Photonics. 37-39. |
0.781 |
|
| 2004 |
Troeger RT, Adam TN, Ray SK, Lv P, Kim S, Xuan G, Ghosh S, Kolodzey J. Terahertz-emitting devices based on boron-doped silicon Ieee Mtt-S International Microwave Symposium Digest. 1: 361-364. |
0.827 |
|
| 2003 |
Kagan MS, Altukhov IV, Chirkova EG, Korolev KA, Sinis VP, Troeger RT, Ray SK, Kolodzey J. Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures Proceedings of Spie - the International Society For Optical Engineering. 5023: 401-404. DOI: 10.1117/12.514394 |
0.776 |
|
| 2003 |
Adam TN, Troeger RT, Ray SK, Lehmann U, Kolodzey J. Terahertz emitting devices based on intersubband transitions in SiGe quantum wells Proceedings of Spie - the International Society For Optical Engineering. 5023: 398-400. DOI: 10.1117/12.514391 |
0.774 |
|
| 2003 |
Venkataraman S, Murakowski J, Adam TN, Kolodzey J, Prather DW. Fabrication of high-fill-factor photonic crystal devices on silicon-on-insulator substrates Journal of Microlithography, Microfabrication and Microsystems. 2: 248-254. DOI: 10.1117/1.1610477 |
0.394 |
|
| 2003 |
Kolodzey J, Adam TN, Troeger RT, Lv PC, Ray SK, Looney G, Rosen A, Kagan MS, Yassievich IN. The design and operation of TeraHertz sources based on silicon germanium alloys 2003 Topical Meeting On Silicon Monolithic Integrated Circuits in Rf Systems - Digest of Papers. 1-5. DOI: 10.1109/SMIC.2003.1196654 |
0.785 |
|
| 2003 |
Adam TN, Troeger RT, Ray SK, Lv PC, Kolodzey J. Terahertz electroluminescence from boron-doped silicon devices Applied Physics Letters. 83: 1713-1715. DOI: 10.1063/1.1605263 |
0.79 |
|
| 2003 |
Altukhov IV, Chirkova EG, Sinis VP, Kagan MS, Troeger RT, Ray SK, Kolodzey J, Prokofiev AA, Odnoblyudov MA, Yassievich IN. Effect of potential and doping profiles on excitation of stimulated THz emission of SiGe/Si quantum-well structures Physica B: Condensed Matter. 340: 831-834. DOI: 10.1016/J.Physb.2003.09.219 |
0.796 |
|
| 2003 |
Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing due to resonant acceptor states in strained p-Ge and SiGe quantum-well structures Physica Status Solidi (B) Basic Research. 235: 293-296. DOI: 10.1002/Pssb.200301571 |
0.787 |
|
| 2003 |
Kagan MS, Altukhov IV, Chirkova EG, Sinis VP, Troeger RT, Ray SK, Kolodzey J. THz lasing of SiGe/Si quantum-well structures due to shallow acceptors Physica Status Solidi Conferences. 135-138. DOI: 10.1002/Pssb.200301536 |
0.792 |
|
| 2002 |
Ray SK, Adam TN, Kar GS, Swann CP, Kolodzey J. Low thermal budget NiSi films on SiGe alloys Materials Research Society Symposium - Proceedings. 745: 247-252. DOI: 10.1557/Proc-745-N6.6 |
0.438 |
|
| 2002 |
Troeger RT, Adam TN, Ray SK, Lv P, Lehmann U, Kolodzey J. Terahertz-emitting silicon-germanium devices Materials Research Society Symposium - Proceedings. 744: 43-48. DOI: 10.1557/Proc-744-M2.4 |
0.829 |
|
| 2002 |
Dashiell MW, Xuan G, Zhang X, Ansorge E, Kolodzey J. Strained SiC:Ge layers in 4H SiC formed by Ge implantation Materials Research Society Symposium - Proceedings. 742: 321-326. DOI: 10.1557/Proc-742-K6.7 |
0.797 |
|
| 2002 |
Dashiell MW, Kolodzey J, Crozat P, Aniel F, Lourtioz JM. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy Ieee Electron Device Letters. 23: 357-359. DOI: 10.1109/Led.2002.1004234 |
0.737 |
|
| 2002 |
Hattab A, Aboelfotoh MO, Tremblay G, Meyer F, Kolodzey J, Osten HJ, Dubois C. Diffusion and electrical activity of copper in Si1-x-yGexCy alloys Microelectronic Engineering. 60: 283-288. DOI: 10.1016/S0167-9317(01)00605-0 |
0.371 |
|
| 2002 |
Katulka G, Roe KJ, Kolodzey J, Swann CP, Desalvo G, Clarke RC, Eldridge G, Messham R. A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation Journal of Electronic Materials. 31: 346-350. DOI: 10.1007/S11664-002-0080-0 |
0.729 |
|
| 2002 |
Adam TN, Shi S, Ray SK, Troeger RT, Prather D, Kolodzey J. The Design and Fabrication of Microdisk Resonators for Terahertz Frequency Operation Proceedings Ieee Lester Eastman Conference On High Performance Devices. 402-408. |
0.739 |
|
| 2002 |
Dashiell MW, Kalambur AT, Leeson R, Roe KJ, Rabolt JF, Kolodzey J. Electrical Effects of DNA as the Gate Electrode of MOS transistors Proceedings Ieee Lester Eastman Conference On High Performance Devices. 259-264. |
0.763 |
|
| 2002 |
Roe KJ, Dashiell MW, Xuan G, Ansorge E, Katulka G, Sustersic N, Zhang X, Kolodzey J. Ge Incorporation in SiC and the Effects on Device Performance Proceedings Ieee Lester Eastman Conference On High Performance Devices. 201-206. |
0.796 |
|
| 2001 |
Chen F, Kolodzey J. Current transport mechanisms of Ge1-yCy/Si heterojunction diodes 2001 6th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2001 - Proceedings. 1: 592-595. DOI: 10.1109/ICSICT.2001.981548 |
0.371 |
|
| 2001 |
Roe KJ, Katulka G, Kolodzey J, Saddow SE, Jacobson D. Silicon carbide and silicon carbide:Germanium heterostructure bipolar transistors Applied Physics Letters. 78: 2073-2075. DOI: 10.1063/1.1358851 |
0.771 |
|
| 2001 |
Roe KJ, Kolodzey J, Swann CP, Tsao MW, Rabolt JF, Chen J, Brandes GR. The electrical and optical properties of thin film diamond implanted with silicon Applied Surface Science. 175: 468-473. DOI: 10.1016/S0169-4332(01)00120-9 |
0.774 |
|
| 2001 |
Katulka G, Roe K, Kolodzey J, Eldridge G, Clarke RC, Swann CP, Wilson RG. The electrical characteristics of silicon carbide alloyed with germanium Applied Surface Science. 175: 505-511. DOI: 10.1016/S0169-4332(01)00111-8 |
0.768 |
|
| 2001 |
Adam T, Kolodzey J, Swann CP, Tsao MW, Rabolt JF. The electrical properties of MIS capacitors with ALN gate dielectrics Applied Surface Science. 175: 428-435. DOI: 10.1016/S0169-4332(01)00091-5 |
0.414 |
|
| 2000 |
Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz J-. Heterostructures of pseudomorphic Ge1−yCy and Ge1−x−ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science & Technology B. 18: 1728-1731. DOI: 10.1116/1.591462 |
0.751 |
|
| 2000 |
Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. Influence of underlying interlevel dielectric films on extrusion formation in aluminum interconnects Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2826-2834. DOI: 10.1116/1.1319691 |
0.679 |
|
| 2000 |
Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581 |
0.823 |
|
| 2000 |
Kolodzey J, Chowdhury EA, Adam TN, Qui G, Rau I, Olowolafe JO, Suehle JS, Chen Y. Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon Ieee Transactions On Electron Devices. 47: 121128. DOI: 10.1109/16.817577 |
0.329 |
|
| 2000 |
Dashiell MW, Kolodzey J, Boucaud P, Yam V, Lourtioz JM. Heterostructures of pseudomorphic Ge1-yCy and G1-x-ySixCy alloys grown on Ge (001) substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1728-1731. |
0.736 |
|
| 2000 |
Chen F, Li B, Sullivan TD, Gonzalez CL, Muzzy CD, Lee HK, Levy MD, Dashiell MW, Kolodzey J. The mechanical properties of common interlevel dielectric films and their influences on aluminum interconnect extrusions Materials Research Society Symposium - Proceedings. 594: 421-426. |
0.686 |
|
| 1999 |
Roe KJ, Dashiell MW, Kolodzey J, Boucaud P, Lourtioz J. Molecular beam epitaxy growth of Ge[sub 1−y]C[sub y] alloys on Si (100) with high carbon contents Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1301. DOI: 10.1116/1.590745 |
0.839 |
|
| 1999 |
Katulka GL, Kolodzey J, Olowolafe J. Analysis of high-temperature materials for application to electric weapon technology Ieee Transactions On Magnetics. 35: 356-360. DOI: 10.1109/20.738431 |
0.805 |
|
| 1999 |
Shao X, Jonczyk R, Dashiell M, Hits D, Orner BA, Khan AS, Roe K, Kolodzey J, Berger PR, Kaba M, Barteau MA, Unruh KM. Strain modification in thin Si1-x-yGexCy alloys on (100) Si for formation of high density and uniformly sized quantum dots Journal of Applied Physics. 85: 578-582. DOI: 10.1063/1.369492 |
0.816 |
|
| 1999 |
Duschl R, Schmidt OG, Winter W, Eberl K, Dashiell MW, Kolodzey J, Jin-Phillipp NY, Phillipp F. Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001) Applied Physics Letters. 74: 1150-1152. DOI: 10.1063/1.123470 |
0.736 |
|
| 1999 |
Katulka G, Guedj C, Kolodzey J, Wilson RG, Swann C, Tsao MW, Rabolt J. Electrical and optical properties of Ge–implanted 4H–SiC Applied Physics Letters. 74: 540-542. DOI: 10.1063/1.123186 |
0.412 |
|
| 1999 |
Guedj C, Kolodzey J. Substitutional Ge in 3C-SiC Applied Physics Letters. 74: 691-693. DOI: 10.1063/1.122989 |
0.393 |
|
| 1999 |
Kulik LV, Guedj C, Dashiell MW, Kolodzey J, Hairie A. Phonon spectra of substitutional carbon in Si1-xGex alloys Physical Review B - Condensed Matter and Materials Physics. 59: 15753-15759. |
0.692 |
|
| 1999 |
Katulka G, Guedj C, Kolodzey J, Wilson RG, Swann C, Tsao MW, Rabolt J. Electrical and optical properties of Ge-implanted 4H-SiC Applied Physics Letters. 74: 540-542. |
0.318 |
|
| 1998 |
Junge KE, Lange R, Dolan JM, Zollner S, Humlfcek J, Dashiell MW, Hits DA, Orner BA, Kolodzey J. Ellipsometry Studies, Optical Properties, And Band Structure of Gel. 1- y C y , Ge-RICH Si 1- x-y Ge x C y , And Boron-Doped Si 1- x Ge x Alloys Mrs Proceedings. 533: 125. DOI: 10.1557/Proc-533-125 |
0.743 |
|
| 1998 |
Dashiell MW, Kulik LV, Hits D, Kolodzey J. MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures Proceedings of Spie - the International Society For Optical Engineering. 3278: 270-277. DOI: 10.1117/12.298210 |
0.764 |
|
| 1998 |
Jonczyk R, Hits DA, Kulik LV, Kolodzey J, Kaba M, Barteau MA. Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1142-1144. DOI: 10.1116/1.590023 |
0.423 |
|
| 1998 |
Piprek J, Tröger T, Schröter B, Kolodzey J, Ih CS. Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors Ieee Photonics Technology Letters. 10: 81-83. DOI: 10.1109/68.651113 |
0.305 |
|
| 1998 |
Kolodzey J, Gauthier-Lafaye O, Sauvage S, Perrossier JL, Boucaud P, Julien FH, Lourtioz JM, Chen F, Orner BA, Roe K, Guedj C, Wilson RG, Spear J. The effects of composition and doping on the response of GeC-Si photodiodes Ieee Journal On Selected Topics in Quantum Electronics. 4: 964-968. DOI: 10.1109/2944.736085 |
0.789 |
|
| 1998 |
Guedj C, Dashiell MW, Kulik L, Kolodzey J, Hairie A. Precipitation of β-SiC in Si1-yCY alloys Journal of Applied Physics. 84: 4631-4633. DOI: 10.1063/1.368703 |
0.75 |
|
| 1998 |
Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419 |
0.778 |
|
| 1998 |
Kulik LV, Hits DA, Dashiell MW, Kolodzey J. The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures Applied Physics Letters. 72: 1972-1974. DOI: 10.1063/1.121238 |
0.767 |
|
| 1998 |
Shao X, Rommel SL, Orner BA, Feng H, Dashiell MW, Troeger RT, Kolodzey J, Berger PR, Laursen T. 1.3 μm photoresponsivity in Si-based Ge1-xCx photodiodes Applied Physics Letters. 72: 1860-1862. DOI: 10.1063/1.121207 |
0.828 |
|
| 1998 |
Dashiell MW, Kulik LV, Hits D, Kolodzey J, Watson G. Carbon incorporation in Si1-yCy alloys grown by molecular beam epitaxy using a single silicon-graphite source Applied Physics Letters. 72: 833-835. DOI: 10.1063/1.120908 |
0.759 |
|
| 1998 |
Dashiell MW, Troeger RT, Roe KJ, Khan AS, Orner B, Olowolafe JO, Berger PR, Wilson RG, Kolodzey J. Electrical and optical properties of phosphorus doped Ge1-yCy Thin Solid Films. 321: 47-50. DOI: 10.1016/S0040-6090(98)00441-6 |
0.824 |
|
| 1998 |
Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J. Optical properties and band structure of Ge1−yCy and Ge-rich Si1−x−yGexCy alloys Thin Solid Films. 313: 172-176. DOI: 10.1016/S0040-6090(97)00806-7 |
0.738 |
|
| 1998 |
Chowdhury EA, Dashiell M, Qiu G, Olowolafe JO, Jonczyk R, Smith D, Barnett A, Kolodzey J, Unruh KM, Swann CP, Suehle J, Chen Y. Structural, optical and electronic properties of oxidized AIN thin films at different temperatures Journal of Electronic Materials. 27: 918-922. DOI: 10.1007/S11664-998-0119-Y |
0.708 |
|
| 1998 |
Junge KE, Voss NR, Lange R, Dolan JM, Zollner S, Dashiell M, Hits DA, Orner BA, Jonczyk R, Kolodzey J. Optical properties and band structure of Ge1-yCy and Ge-rich Si1-x-yGexCy alloys Thin Solid Films. 313: 172-176. |
0.328 |
|
| 1997 |
Shao X, Rommel SL, Orner BA, Kolodzey J, Berger PR. A p-Ge1-xCx/n-Si heterojunction diode grown by molecular beam epitaxy Ieee Electron Device Letters. 18: 411-413. DOI: 10.1109/55.622513 |
0.424 |
|
| 1997 |
Shao X, Rommel SL, Orner BA, Berger PR, Kolodzey J, Unruh KM. Low resistance ohmic contacts to p-Ge1-xCx on Si Ieee Electron Device Letters. 18: 7-9. DOI: 10.1109/55.553059 |
0.373 |
|
| 1997 |
Kolodzey J, Chowdhury EA, Qui G, Olowolafe J, Swann CP, Unruh KM, Suehle J, Wilson RG, Zavada JM. The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AIN films on Si Applied Physics Letters. 71: 3802-3804. DOI: 10.1063/1.120510 |
0.409 |
|
| 1997 |
Chowdhury EA, Kolodzey J, Olowolafe JO, Qiu G, Katulka G, Hits D, Dashiell M, Van Der Weide D, Swann CP, Unruh KM. Thermally oxidized AIN thin films for device insulators Applied Physics Letters. 70: 2732-2734. DOI: 10.1063/1.118980 |
0.71 |
|
| 1997 |
Kolodzey J, Chen F, Orner BA, Guerin D, Ismat Shah S. Energy band offsets of sigec heterojunctions Thin Solid Films. 302: 201-203. DOI: 10.1016/S0040-6090(97)00027-8 |
0.415 |
|
| 1997 |
Chen F, Tröger RT, Roe K, Dashell MD, Jonczyk R, Holmes DS, Wilson RG, Kolodzey J. Electrical properties of Si 1−x−y Ge x C y and Ge 1−y C y alloys Journal of Electronic Materials. 26: 1371-1375. DOI: 10.1007/S11664-997-0053-4 |
0.769 |
|
| 1997 |
Chen F, Tröger RT, Roe K, Dashell MD, Jonczyk R, Holmes DS, Wilson RG, Kolodzey J. Electrical properties of Si1-x-yGexCy and Ge1-yCy alloys Journal of Electronic Materials. 26: 1371-1375. |
0.369 |
|
| 1996 |
Chen F, Orner BA, Guerin D, Khan A, Berger PR, Shah SI, Kolodzey J. Current transport characteristics of SiGeC/Si heterojunction diode Ieee Electron Device Letters. 17: 589-591. DOI: 10.1109/55.545780 |
0.462 |
|
| 1996 |
Orner BA, Hits D, Kolodzey J, Guarin FJ, Powell AR, Iyer SS. Optical absorption in alloys of Si, Ge, C, and Sn Journal of Applied Physics. 79: 8656-8659. DOI: 10.1063/1.362489 |
0.422 |
|
| 1996 |
Junge KE, Lange R, Dolan JM, Zollner S, Dashiell M, Orner BA, Kolodzey J. Dielectric response of thick low dislocation-density Ge epilayers grown on (001) Si Applied Physics Letters. 69: 4084-4086. DOI: 10.1063/1.117826 |
0.772 |
|
| 1996 |
Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1−x−yGexCy alloys Applied Physics Letters. 69: 2557-2559. DOI: 10.1063/1.117738 |
0.748 |
|
| 1996 |
Kolodzey J, O’Neil PA, Zhang S, Orner BA, Roe K, Unruh KM, Swann CP, Waite MM, Shah SI. Erratum: ‘‘Growth of germanium‐carbon alloys on silicon substrates by molecular beam epitaxy’’ [Appl. Phys. Lett. 67, 1865 (1995)] Applied Physics Letters. 68: 1168-1169. DOI: 10.1063/1.116796 |
0.736 |
|
| 1996 |
Chen F, Waite MM, Shah SI, Orner BA, Iyer SS, Kolodzey J. Measurements of the energy band offsets of Si1-xGex/Si and Ge1-yCy/Ge heterojunctions Applied Surface Science. 104: 615-620. DOI: 10.1016/S0169-4332(96)00211-5 |
0.459 |
|
| 1996 |
Orner BA, Khan A, Hits D, Chen F, Roe K, Pickett J, Shao X, Berger PR, Kolodzey J, Wilson RG. Optical properties of Ge1-yCy alloys Journal of Electronic Materials. 25: 297-300. DOI: 10.1007/Bf02666259 |
0.496 |
|
| 1996 |
Orner BA, Olowolafe J, Roe K, Kolodzey J, Laursen T, Mayer JW, Spear J. Band gap of Ge rich Si1-x-yGexCy alloys Applied Physics Letters. 69: 2557-2559. |
0.349 |
|
| 1996 |
Orner BA, Hits D, Kolodzey J, Guarin FJ, Powell AR, Iyer SS. Optical absorption in alloys of Si, Ge, C, and Sn Journal of Applied Physics. 79: 8656-8659. |
0.327 |
|
| 1996 |
Orner BA, Khan A, Hits D, Chen F, Roe K, Pickett J, Shao X, Wilson RG, Berger PR, Kolodzey J. Optical properties of Ge1-yCy alloys Journal of Electronic Materials. 25: 297-300. |
0.397 |
|
| 1995 |
Kolodzey J, O'Neil PA, Zhang S, Orner BA, Roe K, Unruh KM, Swann CP, Waite MM, Shah SI. Growth of germanium-carbon alloys on silicon substrates by molecular beam epitaxy Applied Physics Letters. 67: 1865. DOI: 10.1063/1.114358 |
0.783 |
|
| 1995 |
Kolodzey J, Berger PR, Orner BA, Hits D, Chen F, Khan A, Shao X, Waite MM, Shah SI, Swann CP, Unruh KM. Optical and electronic properties of SiGeC alloys grown on Si substrates Journal of Crystal Growth. 157: 386-391. DOI: 10.1016/0022-0248(95)00329-0 |
0.496 |
|
| 1992 |
Kolodzey J, Schwarz R, Wang F, Muschik T, Krajewski J, Shekhar R, Barteau M, Plättner R, Günzel E. Optoelectronic Properties of Amorphous SiGec Alloys Mrs Proceedings. 258. DOI: 10.1557/Proc-258-637 |
0.444 |
|
| 1992 |
Schwarz R, Fischer T, Hanesch P, Lanz J, Schirmacher W, Kolodzey J, Zorn G, Goebel H. Anomalous Carbon Interdiffusion in a-Si:H/a-SiC:H Multilayers Mrs Proceedings. 258. DOI: 10.1557/Proc-258-559 |
0.365 |
|
| 1992 |
Maranowski S, Laskar J, Feng M, Kolodzey J. Cryogenic Microwave Performance of 0.5-μm InGaAs MESFET's Ieee Electron Device Letters. 13: 64-66. DOI: 10.1109/55.144953 |
0.304 |
|
| 1992 |
Laskar J, Bigelow J, Leburton J, Kolodzey J. Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's Ieee Transactions On Electron Devices. 39: 257-263. DOI: 10.1109/16.121681 |
0.323 |
|
| 1992 |
Kolodzey J, Hanesch P, Fischer T, Schwarz R, Zorn G, Göbel H. Interdiffusion in amorphous Si/SiC multilayers Materials Science and Engineering B. 11: 43-46. DOI: 10.1016/0921-5107(92)90187-E |
0.431 |
|
| 1991 |
Zorn G, Kolodzey J, Göbel H, Fischer T, Hanesch P, Schwarz R. Hydrogen Loss and Interdiffusion in Amorphous Si/SiC Multlayers Materials Science Forum. 887-892. DOI: 10.4028/Www.Scientific.Net/Msf.79-82.887 |
0.384 |
|
| 1991 |
Laskar J, Hanson A, Cunningham B, Kolodzey J, Stillman G, Prasad S. Effect of reduced temperature on the f/sub T/ of AlGaAs/GaAs heterojunction bipolar transistors Ieee Electron Device Letters. 12: 329-331. DOI: 10.1109/55.82077 |
0.337 |
|
| 1991 |
Laskar J, Maranowski S, Caracci S, Feng M, Kolodzey J. Reduced lattice temperature high-speed operation of pseudomorphic InGaAs/GaAs field-effect transistors Applied Physics Letters. 59: 2412-2414. DOI: 10.1063/1.106032 |
0.346 |
|
| 1991 |
Feng M, Laskar J, Miller W, Kolodzey J, Stillman GE, Lau CL. Characterization of ion-implanted InxGa1-xAs/GaAs 0.25 μm gate metal semiconductor field-effect transistors with F t>100 GHz Applied Physics Letters. 58: 2690-2691. DOI: 10.1063/1.104809 |
0.324 |
|
| 1991 |
Nummila K, Ketterson AA, Caracci S, Kolodzey J, Adesida I. Short-channel effects in sub-100 nm GaAs MESFETs Electronics Letters. 27: 1519-1521. DOI: 10.1049/El:19910955 |
0.348 |
|
| 1991 |
Wang F, Muschik T, Fischer T, Bollu M, Kolodzey J, Schwarz R. Asymmetric degradation of electron and hole μτ-products in a-Si:H/a-SiC:H multilayers under illumination Journal of Non-Crystalline Solids. 137: 1143-1146. DOI: 10.1016/S0022-3093(05)80325-4 |
0.34 |
|
| 1991 |
Schwarz R, Fischer T, Hanesch P, Muschik T, Kolodzey J, Cerva H, Meyerheim HL, Scherzer BMU. Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers Applied Surface Science. 50: 456-461. DOI: 10.1016/0169-4332(91)90217-8 |
0.411 |
|
| 1990 |
Kolodzey J. Direct-current and radio-frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8: 360. DOI: 10.1116/1.585071 |
0.361 |
|
| 1990 |
Laskar J, Kolodzey J, Ketterson AA, Adesida I, Cho AY. Characteristics of GaAs/AlGaAs-Doped Channel MISFET's at Cryogenic Temperatures Ieee Electron Device Letters. 11: 300-302. DOI: 10.1109/55.56481 |
0.35 |
|
| 1990 |
Adesida I, Ketterson A, Laskar J, Agarwala S, Brock T, Kolodzey J, Morkoc H. 0.2 μm T-gate InAlAs/InGaAs MODFET with FT = 170 GHz Microelectronic Engineering. 11: 69-72. DOI: 10.1016/0167-9317(90)90075-5 |
0.35 |
|
| 1990 |
Laskar J, Kolodzey J, Ketterson A, Caracci S, Adesida I. Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures Cryogenics. 30: 1134-1139. DOI: 10.1016/0011-2275(90)90221-W |
0.328 |
|
| 1990 |
Laskar J, Kolodzey J, Boor S, Hsieh KC, Kalem S, Caracci S, Ketterson AA, Brock T, Adesida I, Sivco D, Cho AY. High indium content graded channel GainAs/AlinAs pseudomorphic MODFETs Journal of Electronic Materials. 19: 249-252. DOI: 10.1007/Bf02733814 |
0.371 |
|
| 1989 |
Laskar J, Ketterson AA, Baillargeon JN, Brock T, Adesida I, Cheng KY, Kolodzey J. Gate-Controlled Negative Differential Resistance in Drain Current Characteristics of AlGaAs/InGaAs/GaAs Pseudomorphic MODFET’s Ieee Electron Device Letters. 10: 528-530. DOI: 10.1109/55.43129 |
0.337 |
|
| 1989 |
Ketterson AA, Aina OA, Laskar J, Hier H, Brock TL, Adesida I, Kolodzey J. DC and RF Characterization of Short-Gate-Length InGaAs/InAlAs MODFET's Ieee Transactions On Electron Devices. 36: 2361-2363. DOI: 10.1109/16.40922 |
0.356 |
|
| 1989 |
Baillargeon JN, Cheng KY, Laskar J, Kolodzey J. Three-terminal delta-doped barrier switching device with S-shaped negative differential resistance Applied Physics Letters. 55: 663-665. DOI: 10.1063/1.101815 |
0.359 |
|
| 1989 |
Kolodzey J, Laskar J, Boor S, Reis S, Ketterson A, Adesida I, Sivco D, Fischer R, Cho AY. Cryogenic temperature performance of modulation-doped field-effect transistors Electronics Letters. 25: 777-779. DOI: 10.1049/El:19890525 |
0.307 |
|
| 1989 |
Ketterson AA, Laskar J, Brock TL, Adesida I, Kolodzey J, Aina OA, Hier H. Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs Electronics Letters. 25: 440-442. DOI: 10.1049/El:19890302 |
0.321 |
|
| 1989 |
Adesida I, Ketterson AA, Brock TL, Laskar J, Kolodzey J, Aina O, Hier H. Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS Microelectronic Engineering. 9: 345-348. DOI: 10.1016/0167-9317(89)90075-0 |
0.347 |
|
| 1988 |
Leburton JP, Kolodzey J. Tunneling Injection into Modulation Doping Structures: A Mechanism for Negative Differential Resistance Three-Terminal High-Speed Devices Ieee Transactions On Electron Devices. 35: 1530-1532. DOI: 10.1109/16.2587 |
0.331 |
|
| 1988 |
Kolodzey J, Schwarz R, Aljishi S, Chu V, Shen DS, Fauchet PM, Wagner S. Optical and electronic properties of an amorphous silicon-germanium alloy with a 1.28 eV optical gap Applied Physics Letters. 52: 477-479. DOI: 10.1063/1.99449 |
0.56 |
|
| 1988 |
Leburton JP, Kolodzey J, Briggs S. Bipolar tunneling field-effect transistor: A three-terminal negative differential resistance device for high-speed applications Applied Physics Letters. 52: 1608-1610. DOI: 10.1063/1.99056 |
0.336 |
|
| 1987 |
Schwarz R, Dietrich K, Goedecker S, Kolodzey J, Slobodin D, Wagner S. Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F Mrs Proceedings. 95. DOI: 10.1557/Proc-95-353 |
0.523 |
|
| 1987 |
Aljishi S, Shen DS, Chu V, Smith ZE, Conde JP, Kolodzey J, Slobodin D, Wagner S. Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys Mrs Proceedings. 95. DOI: 10.1557/Proc-95-323 |
0.544 |
|
| 1987 |
Smith ZE, Chu V, Shepard K, Aljishi S, Slobodin D, Kolodzey J, Wagner S, Chu TL. Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films Applied Physics Letters. 50: 1521-1523. DOI: 10.1063/1.97819 |
0.478 |
|
| 1987 |
Schwarz R, Kolodzey JS, Wagner S, Kouzes RT. Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films Applied Physics Letters. 50: 188-190. DOI: 10.1063/1.97657 |
0.413 |
|
| 1987 |
Aljishi S, Chu V, Smith ZE, Shen DS, Conde JP, Slobodin D, Kolodzey J. Steady state and transient transport in a-Si, Ge : H, F alloys Journal of Non-Crystalline Solids. 97: 1023-1026. DOI: 10.1016/0022-3093(87)90246-8 |
0.393 |
|
| 1986 |
Kolodzey J, Aljishi S, Schwarz R, Shen DS, Quinlan S, Lyon SA, Wagner S. ELECTRON AND HOLE TRANSPORT PERPENDICULAR TO THE PLANES OF a-Si:H/a-Si,Ge:H COMPOSITIONAL SUPERLATTICES Materials Research Society Symposia Proceedings. 70: 429-434. DOI: 10.1557/Proc-70-429 |
0.531 |
|
| 1986 |
Shen DS, Kolodzey J, Slobodin D, Conde JP, Lane C, Campbell IH, Fauchet PM, Wagner S. Microcrystallinity in α-Si, Ge:H, F Alloys Mrs Proceedings. 70. DOI: 10.1557/Proc-70-301 |
0.585 |
|
| 1986 |
Schwarz R, Okada Y, Chou SF, Kolodzey J, Slobodin D, Wagner S. FLUORINE INCORPORATION AND ANNEALING PROPERTIES OF a-Si,Ge:H,F ALLOYS STUDIED BY ELASTIC PROTON SCATTERING AND IR ABSORPTION Materials Research Society Symposia Proceedings. 70: 283-288. DOI: 10.1557/Proc-70-283 |
0.517 |
|
| 1986 |
Aljishi S, Smith ZE, Slobodin D, Kolodzey J, Chu V, Schwarz R, Wagner S. ELECTRONIC TRANSPORT AND THE DENSITY OF STATES DISTRIBUTION IN a-(Si,Ge):H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 269-274. DOI: 10.1557/Proc-70-269 |
0.528 |
|
| 1986 |
Kolodzey J, Aljishi S, Smith ZE, Chu V, Schwarz R, Wagner S. MEASUREMENTS OF LIGHT-INDUCED DEGRADATION IN a-Si,Ge:H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 237-242. DOI: 10.1557/Proc-70-237 |
0.557 |
|
| 1986 |
Kolodzey J, Aljishi S, Schwarz R, Slobodin D, Wagner S. Properties of a-Si, Ge: H, F alloys prepared by rf glow discharge in an ultrahigh vacuum reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2499-2504. DOI: 10.1116/1.573717 |
0.532 |
|
| 1986 |
Chiang CL, Schwarz R, Slobodin DE, Kolodzey J, Wagner S. Measurement of the Minority-Carrier Diffusion Length in Thin Semiconductor Films Ieee Transactions On Electron Devices. 33: 1587-1592. DOI: 10.1109/T-Ed.1986.22711 |
0.48 |
|
| 1986 |
Kolodzey J, Schwarz R, Aljishi S, Shen DS, Campbell I, Fauchet PM, Lyon SA, Wagner S. Carrier scattering at periodic a-Si:H,F barriers in a-Si,Ge:H,F alloys Superlattices and Microstructures. 2: 391-396. DOI: 10.1016/0749-6036(86)90054-6 |
0.539 |
|
| 1986 |
Shen DS, Kolodzey J, Slobodin D, Conde JP, Lane C, Campbell IH, Fauchet PM, Wagner S. MICROCRYSTALLINITY IN alpha -Si, Ge:H,F ALLOYS Materials Research Society Symposia Proceedings. 70: 301-306. |
0.355 |
|
| 1985 |
Kolodzey J, Slobodin D, Aljishi S, Quinlan S, Schwarz R, Shen DS, Fauchet PM, Wagner S. Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges Journal of Non-Crystalline Solids. 77: 897-900. DOI: 10.1016/0022-3093(85)90805-1 |
0.534 |
|
| 1985 |
Schwarz R, Kolodzey J, Aljishi S, Wagner S, Kouzes RT. RADIATION DAMAGE BY 12 MEV PROTONS AND ANNEALING OF HYDROGENATED AMORPHOUS SILICON Conference Record of the Ieee Photovoltaic Specialists Conference. 903-908. |
0.302 |
|
| Show low-probability matches. |
