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Paul Ruden - Publications

Affiliations: 
Electrical Engineering University of Minnesota, Twin Cities, Minneapolis, MN 
Area:
Electronics and Electrical Engineering
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Yin S, Nie W, Mohite AD, Saxena A, Smith DL, Ruden PP. Current-voltage characteristics of organic heterostructure devices with insulating spacer layers Organic Electronics: Physics, Materials, Applications. 24: 26-29. DOI: 10.1016/J.Orgel.2015.05.018  0.31
2012 Liu F, Ruden PP, Campbell IH, Smith DL. Electrostatic capacitance in single and double layer organic diodes Applied Physics Letters. 101. DOI: 10.1063/1.4734379  0.301
2012 Steinke IP, Ruden PP. Percolation model for the threshold voltage of field-effect transistors with nanocrystalline channels Journal of Applied Physics. 111. DOI: 10.1063/1.3676217  0.757
2008 Steinke IP, Ruden PP, Ni X, Morko̧ H, Son KA. Current versus voltage characteristics of GaNAlGaNGaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure Journal of Applied Physics. 103. DOI: 10.1063/1.2844484  0.81
2008 Schroepfer DD, Ruden PP, Xia Y, Frisbie CD, Shaheen SE. Hydrostatic pressure effects on poly(3-hexylthiophene) thin film transistors Applied Physics Letters. 92. DOI: 10.1063/1.2830330  0.782
2007 Steinke I, Kauser MZ, Ruden PP, Ni X, Morkoc H, Son K. Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-19  0.807
2007 Ni X, Xie J, Fu Y, Morkoç H, Steinke IP, Liu Y, Ruden PP, Son KA, Yang B. Investigation of current-voltage characteristics of n-GaN/i-Al xGa1-xN/n-GaN structures Proceedings of Spie - the International Society For Optical Engineering. 6473. DOI: 10.1117/12.706793  0.791
2007 Kauser MZ, Ruden PP. Effects of chirality and diameter on the transport properties of semiconducting carbon nanotubes Journal of Applied Physics. 102. DOI: 10.1063/1.2767224  0.719
2007 Smith DL, Ruden PP. Device modeling of light-emitting ambipolar organic semiconductor field-effect transistors Journal of Applied Physics. 101. DOI: 10.1063/1.2715490  0.305
2007 Kauser MZ, Ruden PP. Effects of chirality and diameter on electron transport properties in individual semiconducting carbon nanotubes Materials Research Society Symposium Proceedings. 1017: 70-75.  0.717
2006 Kauser MZ, Ruden PP. Electron transport in semiconducting chiral carbon nanotubes Applied Physics Letters. 89. DOI: 10.1063/1.2362973  0.726
2006 Liu Y, Kauser MZ, Schroepfer DD, Ruden PP, Xie J, Moon YT, Onojima N, Morko̧ H, Son KA, Nathan MI. Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices Journal of Applied Physics. 99. DOI: 10.1063/1.2200742  0.77
2006 Liu Y, Kauser MZ, Ruden PP, Hassan Z, Lee YC, Ng SS, Yam FK. Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2164909  0.768
2006 Liu Y, Ruden PP, Xie J, Morkoç H, Son KA. Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field effect transistors Applied Physics Letters. 88. DOI: 10.1063/1.2161812  0.491
2006 Kauser MZ, Verma A, Ruden PP. Low- and high-field transport studies for semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 34: 666-669. DOI: 10.1016/J.Physe.2006.03.055  0.73
2006 Hassan Z, Lee YC, Ng SS, Yam FK, Liu Y, Rang Z, Kauser MZ, Ruden PP, Nathan MI. AlGaN metal-semiconductor-metal structure for pressure sensing applications Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2287-2290. DOI: 10.1002/Pssc.200565155  0.792
2005 Verma A, Kauser MZ, Ruden PP. Effects of radial breathing mode phonons on charge transport in semiconducting zigzag carbon nanotubes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2043244  0.728
2005 Verma A, Kauser MZ, Lee BW, Brennan KF, Ruden PP. Ensemble Monte Carlo transport simulations for semiconducting carbon nano-tubes Aip Conference Proceedings. 772: 1049-1050. DOI: 10.1063/1.1994472  0.725
2005 Verma A, Kauser MZ, Ruden PP. Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes Journal of Applied Physics. 97. DOI: 10.1063/1.1925763  0.731
2005 Rang Z, Nathan MI, Ruden PP, Podzorov V, Gershenson ME, Newman CR, Frisbie CD. Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1875761  0.799
2004 Rang Z, Nathan MI, Ruden PP, Chesterfield R, Frisbie CD. Hydrostatic-pressure dependence of organic thin-film transistor current versus voltage characteristics Applied Physics Letters. 85: 5760-5762. DOI: 10.1063/1.1829388  0.8
2004 Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dogan S, Morkoç H, Park SS, Lee KY. Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN Applied Physics Letters. 84: 2112-2114. DOI: 10.1063/1.1689392  0.753
2002 Liu Y, Kauser MZ, Nathan MI, Ruden PP, Dabiran AM, Hertog B, Chow PP. Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer Applied Physics Letters. 81: 3398-3400. DOI: 10.1063/1.1517713  0.752
2001 Zhang Y, Ruden PP. Current Gain of an AlGaN/GaN Heterojunction Bipolar Transistor Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E9.14  0.344
2001 Liu Y, Rang ZL, Fung AK, Cai C, Ruden PP, Nathan MI, Shtrikman H. Uniaxial-stress dependence of Hall effect in an AlGaAs/GaAs modulation-doped heterojunction Applied Physics Letters. 79: 4586-4588. DOI: 10.1063/1.1427753  0.73
2001 Rang Z, Haraldsson A, Kim DM, Ruden PP, Nathan MI, Chesterfield RJ, Frisbie CD. Hydrostatic-pressure dependence of the photoconductivity of single-crystal pentacene and tetracene Applied Physics Letters. 79: 2731-2733. DOI: 10.1063/1.1410878  0.764
2000 Albrecht JD, Ruden PP, Ancona MG. New materials-theory-based model for output characteristics of AlGaN/GaN heterostructure field effect transistors Materials Research Society Symposium - Proceedings. 595.  0.302
2000 Zhang Y, Cai C, Ruden PP. AlGaN/GaN heterojunction bipolar transistor structures-design considerations Journal of Applied Physics. 88: 1067-1072.  0.355
2000 Zhang Y, Cai C, Ruden PP. Design of AlGaN/GaN heterojunction bipolar transistor structures Materials Research Society Symposium - Proceedings. 622.  0.351
1997 Fung AK, Cong L, Albrecht JD, Nathan MI, Ruden PP, Shtrikman H. Linear in-plane uniaxial stress effects on the device characteristics of AlGaAs/GaAs modulation doped field effect transistors Journal of Applied Physics. 81: 502-505.  0.324
1996 Albrecht JD, Cong L, Ruden PP, Nathan MI, Smith DL. Resonant tunneling in (001)- and (111)-oriented III-V double-barrier heterostructures under transverse and longitudinal stresses Journal of Applied Physics. 79: 7763-7769.  0.368
1996 Horning RD, Akinwande AI, Ruden PP, Goldenberg BL, King J. Electron emission from GaN/LaB6 cold cathodes Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 660.  0.333
1988 Ruden PP, Han CJ, Shur M. Gate current of modulation-doped field-effect transistors Journal of Applied Physics. 64: 1541-1546. DOI: 10.1063/1.341830  0.325
1987 Ruden PP, Engelhardt DC, Walterson RA, Hibbs-Brenner MK. Current versus voltage measurements on GaAs doping superlattices Journal of Applied Physics. 62: 2401-2403. DOI: 10.1063/1.339473  0.38
1983 Ruden P, Döhler GH. Electronic excitations in semiconductors with doping superlattices Physical Review B. 27: 3547-3553. DOI: 10.1103/Physrevb.27.3547  0.301
1983 Ruden P, Döhler GH. Semiconductors with hetero-n-i-p-i superlattices Surface Science. 132: 540-542. DOI: 10.1016/0039-6028(83)90560-5  0.362
1982 Künzel H, Döhler GH, Ruden P, Ploog K. Tunable electroluminescence from GaAs doping superlattices Applied Physics Letters. 41: 852-854. DOI: 10.1063/1.93717  0.37
1982 Jung H, Döhler GH, Künzel H, Ploog K, Ruden P, Stolz HJ. Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices Solid State Communications. 43: 291-294. DOI: 10.1016/0038-1098(82)90094-1  0.347
1981 Döhler GH, K̈nzel H, Olego D, Ploog K, Ruden P, Stolz HJ, Abstreiter G. Observation of tunable band gap and two-dimensional subbands in a novel GaAs superlattice Physical Review Letters. 47: 864-867. DOI: 10.1103/Physrevlett.47.864  0.359
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