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Russell Gwilliam - Publications

Affiliations: 
Faculty of Engineering and Physical Sciences, Electronic Engineering University of Surrey (United Kingdom) 
Area:
Materials Science Engineering, Optics Physics, Inorganic Chemistry, Chemical Engineering
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203 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Schneider EB, England J, Antwis L, Royle A, Webb R, Gwilliam R. A study of the formation of isotopically pure 28Si layers for quantum computers using conventional ion implantation Journal of Physics D: Applied Physics. 54: 355105. DOI: 10.1088/1361-6463/ac0a07  0.356
2019 Peaker AR, Markevich V, Slotte J, Rummukainen M, Capan I, Pivac B, Gwilliam R, Jeynes C, Dobaczewski L. Understanding Ion Implantation Defects in Germanium Ecs Transactions. 3: 67-76. DOI: 10.1149/1.2356265  0.308
2019 Chicilo F, Koughia C, Curry R, Gwilliam R, Ahumada-Lazo R, Edgar A, Binks DJ, Chapman D, Kasap S. X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurement Journal of Materials Science: Materials in Electronics. 30: 16740-16746. DOI: 10.1007/S10854-019-01212-4  0.311
2018 Pastor D, Gandhi HH, Monmeyran CP, Akey AJ, Milazzo R, Cai Y, Napolitani E, Gwilliam RM, Crowe IF, Michel J, Kimerling LC, Agarwal A, Mazur E, Aziz MJ. High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting Journal of Applied Physics. 123: 165101. DOI: 10.1063/1.5012512  0.302
2018 Monmeyran C, Crowe IF, Gwilliam RM, Heidelberger C, Napolitani E, Pastor D, Gandhi HH, Mazur E, Michel J, Agarwal AM, Kimerling LC. Improved retention of phosphorus donors in germanium using a non-amorphizing fluorine co-implantation technique Journal of Applied Physics. 123: 161524. DOI: 10.1063/1.4999210  0.342
2017 Litvinenko KL, Bowyer ET, Greenland PT, Stavrias N, Li J, Gwilliam R, Villis BJ, Matmon G, Pang MLY, Redlich B, van der Meer AFG, Pidgeon CR, Aeppli G, Murdin BN. Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out. Nature Communications. 8: 15445. PMID 28425434 DOI: 10.1038/Ncomms15445  0.333
2017 Lamb DA, Underwood CI, Barrioz V, Gwilliam R, Hall J, Baker MA, Irvine SJC. Proton irradiation of CdTe thin film photovoltaics deposited on cerium‐doped space glass Progress in Photovoltaics. 25: 1059-1067. DOI: 10.1002/Pip.2923  0.352
2016 Wisby IS, Graaf SEd, Gwilliam R, Adamyan A, Kubatkin SE, Meeson PJ, Tzalenchuk AY, Lindström T. Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd 3 + :Al 2 O 3 Physical Review Applied. 6: 24021. DOI: 10.1103/Physrevapplied.6.024021  0.391
2015 Litvinenko KL, Bowyer ET, Greenland PT, Stavrias N, Li J, Gwilliam R, Villis BJ, Matmon G, Pang ML, Redlich B, van der Meer AF, Pidgeon CR, Aeppli G, Murdin BN. Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out. Nature Communications. 6: 6549. PMID 25790967 DOI: 10.1038/Ncomms7549  0.333
2015 Colaux JL, Jeynes C, Heasman KC, Gwilliam RM. Certified ion implantation fluence by high accuracy RBS. The Analyst. 140: 3251-61. PMID 25773724 DOI: 10.1039/c4an02316a  0.301
2015 Fedorenko YG, Hughes MA, Colaux JL, Jeynes C, Gwilliam RM, Homewood K, Gholipour B, Yao J, Hewak DW, Lee T, Elliott SR, Curry RJ. Electrical properties of Bi-implanted amorphous chalcogenide films Thin Solid Films. 589: 369-375. DOI: 10.1016/J.Tsf.2015.05.036  0.324
2015 Secchi M, Demenev E, Colaux JL, Giubertoni D, Dell'Anna R, Iacob E, Gwilliam RM, Jeynes C, Bersani M. Development of nanotopography during SIMS characterization of thin films of Ge1-xSnx alloy Applied Surface Science. 356: 422-428. DOI: 10.1016/j.apsusc.2015.08.083  0.319
2014 Hughes MA, Fedorenko Y, Gholipour B, Yao J, Lee TH, Gwilliam RM, Homewood KP, Hinder S, Hewak DW, Elliott SR, Curry RJ. n-type chalcogenides by ion implantation. Nature Communications. 5: 5346. PMID 25376988 DOI: 10.1038/Ncomms6346  0.316
2014 Fedorenko YG, Hughes MA, Colaux JL, Jeynes C, Gwilliam RM, Homewood KP, Yao J, Hewak DW, Lee TH, Elliott SR, Gholipour B, Curry RJ. Electrical properties of amorphous chalcogenide/silicon heterojunctions modified by ion implantation Proceedings of Spie - the International Society For Optical Engineering. 8982. DOI: 10.1117/12.2037965  0.405
2014 Hughes MA, Federenko Y, Lee TH, Yao J, Gholipour B, Gwilliam RM, Homewood KP, Hewak DW, Elliott SR, Curry RJ. Optical and electronic properties of bismuth-implanted glasses Proceedings of Spie - the International Society For Optical Engineering. 8982. DOI: 10.1117/12.2036933  0.312
2014 Wisby I, Graaf SEd, Gwilliam R, Adamyan A, Kubatkin SE, Meeson PJ, Tzalenchuk AY, Lindström T. Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator Applied Physics Letters. 105: 102601. DOI: 10.1063/1.4894455  0.379
2014 Razali MA, Secchi M, Bersani M, Gwilliam RM. Point defect engineering study of phosphorus ion implanted germanium Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 9-11. DOI: 10.1002/pssc.201300155  0.344
2014 Alzanki T, Bennett N, Gwilliam R, Jeynes C, Bailey P, Noakes T, Sealy B. Ion beam analysis for hall scattering factor measurements in antimony implanted bulk and strained silicon Journal of Engineering Research. 2: 122-132.  0.306
2013 Dudeck KJ, Huante-Ceron E, Knights AP, Gwilliam RM, Botton GA. Direct observation of indium precipitates in silicon following high dose ion implantation Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/12/125012  0.403
2012 Graham C, Gwilliam R, Seeds A. Nitrogen ion implanted InP based photo-switch. Optics Express. 20: 26696-703. PMID 23187522 DOI: 10.1364/Oe.20.026696  0.394
2012 Mazzucato S, Royall B, Ketlhwaafetse R, Balkan N, Salmi J, Puustinen J, Guina M, Smith A, Gwilliam R. Dilute nitride and GaAs n-i-p-i solar cells. Nanoscale Research Letters. 7: 631. PMID 23167964 DOI: 10.1186/1556-276X-7-631  0.459
2012 Sandall I, Tan CH, Smith A, Gwilliam R. Planar InAs photodiodes fabricated using He ion implantation. Optics Express. 20: 8575-83. PMID 22513566 DOI: 10.1109/IPCon.2012.6358542  0.358
2012 Halsall MP, Crowe IF, Southern R, Yang P, Gwilliam RM. Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 23-24. DOI: 10.1109/COMMAD.2012.6472341  0.346
2012 Coleman PG, Edwardson CJ, Knights AP, Gwilliam RM. Vacancy-type defects created by single-shot and chain ion implantation of silicon New Journal of Physics. 14. DOI: 10.1088/1367-2630/14/2/025007  0.348
2012 Antwis L, Gwilliam R, Smith A, Homewood K, Jeynes C. Characterization of a-FeSi 2/c-Si heterojunctions for photovoltaic applications Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/3/035016  0.695
2012 Razali MA, Smith AJ, Jeynes C, Gwilliam RM. Temperature-dependant study of phosphorus ion implantation in germanium Aip Conference Proceedings. 1496: 193-196. DOI: 10.1063/1.4766522  0.319
2012 Peng N, Jeynes C, Gwilliam RM, Webb RP. On Fabrication of High Concentration Mn Doped Si by Ion Implantation: Problem and Challenge Physics Procedia. 32: 408-411. DOI: 10.1016/J.PHPRO.2012.03.577  0.387
2012 Scapellato GG, Bruno E, Smith AJ, Napolitani E, Salvador DD, Mirabella S, Mastromatteo M, Carnera A, Gwilliam R, Priolo F. Role of self-interstitials on B diffusion in Ge Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 282: 8-11. DOI: 10.1016/J.Nimb.2011.08.041  0.302
2012 England J, Phaneuf MW, Laquerre A, Smith A, Gwilliam R. Ion beam assisted crystallization of amorphous silicon layers using high current density Gallium beams Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 272: 409-413. DOI: 10.1016/J.Nimb.2011.01.111  0.43
2011 Loiacono R, Reed GT, Mashanovich GZ, Gwilliam R, Henley SJ, Hu Y, Feldesh R, Jones R. Laser erasable implanted gratings for integrated silicon photonics. Optics Express. 19: 10728-34. PMID 21643329 DOI: 10.1364/Oe.19.010728  0.386
2011 Lourenço M, Gwilliam R, Homewood K. Eye-safe 2 μm luminescence from thulium-doped silicon Optics Letters. 36: 169-171. PMID 21263489 DOI: 10.1364/Ol.36.000169  0.361
2011 Milosavljević M, Lourenço MA, Gwilliam RM, Homewood KP. Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes Journal of Applied Physics. 110: 033508. DOI: 10.1063/1.3614036  0.322
2010 Crowe IF, Hulko O, Knights AP, Hylton NP, Halsall MP, Ruffell S, Gwilliam RM. Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processing Proceedings of Spie - the International Society For Optical Engineering. 7606. DOI: 10.1117/12.852924  0.392
2010 Hylton NP, Crowe IF, Knights AP, Halsall MP, Ruffell S, Gwilliam RM. Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion implantation into SiO2 Proceedings of Spie - the International Society For Optical Engineering. 7606. DOI: 10.1117/12.852922  0.409
2010 Wright NM, Smith AJ, Litvinenko K, Gwilliam R, Mashanovich G, Reed GT. Effects of annealing silicon ion irradiated rib waveguides with respect to free carrier lifetime Proceedings of Spie - the International Society For Optical Engineering. 7606. DOI: 10.1117/12.838582  0.328
2010 Antwis L, Wong L, Smith A, Homewood K, Jeynes C, Gwilliam R. Optimization and characterisation of amorphous iron disilicide formed by ion beam mixing of Fe/Si multilayer structures for photovoltaic applications Aip Conference Proceedings. 1321: 278-281. DOI: 10.1063/1.3548379  0.684
2009 Vassilevski K, Nikitina I, Horsfall A, Wright N, O'Neill AG, Gwilliam R, Johnson CM. Silicon carbide static induction transistor with implanted buried gate Materials Science Forum. 615: 735-738. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.735  0.454
2009 Ali-Boucetta H, Bensalem R, Alleg S, Smith A, Gwilliam R, Sealy B. Simulation of electrical properties in ion implanted GaAs Physics Procedia. 2: 797-801. DOI: 10.1016/J.Phpro.2009.11.027  0.524
2009 Knights AP, Milgram JN, Wojcik J, Mascher P, Crowe I, Sherliker B, Halsall MP, Gwilliam RM. Observation of non-radiative de-excitation processes in silicon nanocrystals Physica Status Solidi (a) Applications and Materials Science. 206: 969-972. DOI: 10.1002/Pssa.200881306  0.301
2008 Wright NM, Thomson DJ, Litvinenko KL, Headley WR, Smith AJ, Knights AP, Deane JH, Gardes FY, Mashanovich GZ, Gwilliam R, Reed GT. Free carrier lifetime modification for silicon waveguide based devices. Optics Express. 16: 19779-84. PMID 19030063 DOI: 10.1364/Oe.16.019779  0.467
2008 Cowern NEB, Smith AJ, Bennett NS, Sealy BJ, Gwilliam R, Webb RP, Colombeau B, Paul S, Lerch W, Pakfar A. Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping Materials Science Forum. 295-304. DOI: 10.4028/Www.Scientific.Net/Msf.573-574.295  0.451
2008 Kah M, Smith AJ, Hamilton JJ, Sharp J, Yeong SH, Colombeau B, Gwilliam R, Webb RP, Kirkby KJ. Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 347-350. DOI: 10.1116/1.2816936  0.475
2008 Logan DF, Jessop PE, Knights AP, Gwilliam RM, Halsall MP. The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 152-155. DOI: 10.1109/COMMAD.2008.4802114  0.323
2008 Slotte J, Rummukainen M, Tuomisto F, Markevich V, Peaker A, Jeynes C, Gwilliam R. Evolution of vacancy-related defects upon annealing of ion-implanted germanium Physical Review B. 78: 85202. DOI: 10.1103/Physrevb.78.085202  0.483
2008 Rudawski NG, Jones KS, Gwilliam R. Dopant-stress synergy in Si solid-phase epitaxy Applied Physics Letters. 92. DOI: 10.1063/1.2945291  0.326
2008 Milosavljević M, Lourenço MA, Shao G, Gwilliam RM, Homewood KP. Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 266: 2470-2474. DOI: 10.1016/j.nimb.2008.03.021  0.311
2008 Rudawski NG, Jones KS, Gwilliam R. Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon Materials Science and Engineering R: Reports. 61: 40-58. DOI: 10.1016/J.Mser.2008.02.002  0.301
2007 Pantouvaki M, Renaud CC, Cannard P, Robertson MJ, Gwilliam R, Seeds AJ. Fast Tuneable InGaAsP DBR Laser Using Quantum-Confined Stark-Effect-Induced Refractive Index Change Ieee Journal of Selected Topics in Quantum Electronics. 13: 1112-1121. DOI: 10.1109/Jstqe.2007.906046  0.303
2007 Rudawski NG, Jones KS, Gwilliam R. Solid phase epitaxy in uniaxially stressed (001) Si Applied Physics Letters. 91. DOI: 10.1063/1.2801518  0.379
2007 Peng N, Jeynes C, Gwilliam RM, Kirkby KJ, Webb RP. Depth profile analysis for MgB2 thin films, formed by B implantation in Mg ribbons using energetic ion backscatterings Physica C: Superconductivity and Its Applications. 460: 600-601. DOI: 10.1016/J.Physc.2007.04.120  0.315
2007 Gwilliam R, Cowern NEB, Colombeau B, Sealy B, Smith AJ. Vacancy engineering for ultra-shallow junction formation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 600-603. DOI: 10.1016/J.Nimb.2007.04.048  0.435
2007 Mistry P, Gomez-Morilla I, Smith RC, Thomson D, Grime GW, Webb RP, Gwilliam R, Jeynes C, Cansell A, Merchant M, Kirkby KJ. Maskless proton beam writing in gallium arsenide Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 260: 437-441. DOI: 10.1016/J.Nimb.2007.02.059  0.401
2006 Bennett N, Smith AJ, Beer CS, O'Reilly L, Colombeau B, Dilliway GD, Harper R, McNally PJ, Gwilliam R, Cowern NEB, Sealy BJ. Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon Mrs Proceedings. 912: 59-64. DOI: 10.1557/Proc-0912-C02-03  0.328
2006 Gennaro S, Giubertoni D, Bersani M, Foggiato J, Yoo WS, Gwilliam R. Nonconventional flash annealing on shallow indium implants in silicon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 473-477. DOI: 10.1116/1.2132321  0.483
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.38
2006 Smith AJ, Cowern NEB, Gwilliam R, Sealy BJ, Colombeau B, Collart EJH, Gennaro S, Giubertoni D, Bersani M, Barozzi M. Vacancy-engineering implants for high boron activation in silicon on insulator Applied Physics Letters. 88: 82112. DOI: 10.1063/1.2178487  0.46
2006 Han SY, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Choi HK, Lee WO, Park YD, Zavada JM, Gwilliam R. Effect of Gd implantation on the structural and magnetic properties of GaN and AlN Applied Physics Letters. 88: 042102. DOI: 10.1063/1.2167790  0.44
2006 Webb M, Jeynes C, Gwilliam R, Royle A, Sealy B. Characterising ion-cut in GaAs by Rutherford backscattering spectroscopy Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 429-431. DOI: 10.1016/J.Nimb.2006.04.045  0.428
2006 Jeynes C, Peng N, Barradas NP, Gwilliam RM. Quality assurance in an implantation laboratory by high accuracy RBS Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 249: 482-485. DOI: 10.1016/j.nimb.2006.03.171  0.368
2006 Mistry P, Gomez-Morilla I, Grime GW, Webb R, Jeynes C, Gwilliam R, Cansell A, Merchant M, Kirkby KJ. Proton beam lithography at the University of Surrey's Ion Beam Centre Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 387-389. DOI: 10.1016/J.Nimb.2005.08.128  0.329
2006 Alzanki T, Gwilliam R, Emerson N, Smith A, Webb R, Sealy BJ. Electrical profiles of 20 nm junctions in Sb implanted silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 242: 693-695. DOI: 10.1016/J.Nimb.2005.08.091  0.469
2006 White N, Chen J, Mulcahy C, Biswas S, Gwilliam R. Chicane deceleration - An innovative energy contamination control technique in low energy ion implantation Aip Conference Proceedings. 866: 335-339.  0.308
2006 Gennaro S, Giubertoni D, Bersani M, Foggiato J, Yoo WS, Gwilliam R, Anderle M. The effect of flash annealing on the electrical properties of indium/carbon Co-implants in silicon Aip Conference Proceedings. 866: 113-116.  0.318
2005 Smith AJ, Colombeau B, Bennett N, Gwilliam R, Cowern N, Sealy B. Low temperature B activation in SOI using optimised vacancy engineering implants Materials Research Society Symposium Proceedings. 864: 321-325. DOI: 10.1557/Proc-864-E7.1  0.468
2005 Peng N, Jeynes C, Gwilliam RM, Kirkby KJ, Webb RP, Shao G, Astill DM, Liang WY. A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantation Ieee Transactions On Applied Superconductivity. 15: 3265-3268. DOI: 10.1109/Tasc.2005.848848  0.31
2005 Gomez-Morilla I, Sofield CJ, Grime GW, Gwilliam R. Rapid deep micromachining of polytetrafluoroethylene by MeV ion bombardment in oxygen-rich atmospheres Journal of Micromechanics and Microengineering. 15: 698-701. DOI: 10.1088/0960-1317/15/4/004  0.348
2005 Whelan S, Kelly MJ, Yan J, Gwilliam R. Radiation damage formation and annealing in Mg-implanted GaN Aip Conference Proceedings. 772: 249-250. DOI: 10.1063/1.1994086  0.343
2005 Whelan S, Kelly MJ, Gwilliam R, Jeynes C, Bongiorno C. The dependence of the radiation damage formation on the substrate implant temperature in GaN during Mg ion implantation Journal of Applied Physics. 98. DOI: 10.1063/1.1940142  0.46
2005 Too P, Ahmed S, Gwilliam R, Sealy BJ. Implant isolation of InP by nitrogen irradiation: Effect of dose, initial carrier concentration and implantation temperature Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 240: 178-182. DOI: 10.1016/J.Nimb.2005.06.111  0.396
2005 Mefo J, Sealy BJ, Collart EJH, Armour DG, Gwilliam R. Characterisation of an indirectly heated cathode source using Langmuir probe diagnostics Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 240: 13-17. DOI: 10.1016/J.Nimb.2005.06.079  0.357
2005 Gwilliam R, Gennaro S, Claudio G, Sealy BJ, Mulcahy C, Biswas S. Ultra shallow junction formation and dopant activation study of Ga implanted Si Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 237: 121-125. DOI: 10.1016/J.Nimb.2005.04.113  0.501
2005 Gwilliam R, Wang YY, Kelly MJ, Kearney MJ. Manufacturability of fully ion implanted planer-doped-barrier diodes in GaAs Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 237: 208-212. DOI: 10.1016/J.Nimb.2005.04.102  0.467
2005 Webb M, Jeynes C, Gwilliam R, Too P, Kozanecki A, Domagala J, Royle A, Sealy B. The influence of the ion implantation temperature and the dose rate on smart-cut© in GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 237: 142-145. DOI: 10.1016/J.Nimb.2005.04.100  0.433
2005 Mistry P, Gomez-Morilla I, Grime GW, Webb RP, Gwilliam R, Cansell A, Merchant M, Kirkby KJ, Teo EJ, Breese MBH, Bettiol AA, Blackwood DJ, Watt F. New developments in the applications of proton beam writing Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 237: 188-192. DOI: 10.1016/J.Nimb.2005.04.099  0.342
2005 Sharp JA, Gwilliam RM, Sealy BJ, Jeynes C, Hamilton JJ, Kirkby KJ. Comparison of elemental boron and boron halide implants into silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 237: 93-97. DOI: 10.1016/J.Nimb.2005.04.084  0.362
2005 Gennaro S, Barozzi M, Bersani M, Sealy BJ, Gwilliam R. Diffusion of indium implanted in silicon: The effect of the pre-amorphisation treatment and of the presence of carbon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 237: 88-92. DOI: 10.1016/J.Nimb.2005.04.083  0.471
2005 Mistry P, Gomez-Morilla I, Grime GW, Webb R, Jeynes C, Gwilliam R, Cansell A, Merchant M, Kirkby KJ. New developments on the Surrey microbeam applications to lithography Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 231: 428-432. DOI: 10.1016/J.Nimb.2005.01.095  0.359
2005 Grime GW, Sofield CJ, Gomez-Morilla I, Gwilliam R, Ynsa MD, Enguita O. Rapid direct micromachining of PTFE using MeV ions in an oxygen rich atmosphere Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 231: 378-383. DOI: 10.1016/J.Nimb.2005.01.086  0.344
2005 Smith AJ, Colombeau B, Gwilliam R, Cowern NEB, Sealy BJ, Milosavljevic M, Collart E, Gennaro S, Bersani M, Barozzi M. Suppression of boron interstitial clusters in SOI using vacancy engineering Materials Science and Engineering B-Advanced Functional Solid-State Materials. 210-214. DOI: 10.1016/J.Mseb.2005.08.128  0.38
2005 Galata SF, Lourenço MA, Gwilliam RM, Homewod KP. Sulphur doped silicon light emitting diodes Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 124: 435-439. DOI: 10.1016/j.mseb.2005.08.081  0.346
2005 Sharp JA, Gwilliam RM, Sealy BJ, Jeynes C, Hamilton JJ, Kirkby KJ. Evaluation of BBr2+ and B+ + Br + implants in silicon Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 124: 196-199. DOI: 10.1016/J.Mseb.2005.08.065  0.346
2005 Gwilliam R, Lourenço MA, Milosavljevic M, Homewood KP, Shao G. Dislocation engineering for Si-based light emitting diodes Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 124: 86-92. DOI: 10.1016/J.Mseb.2005.08.050  0.41
2005 Bennett NS, Smith AJ, Colombeau B, Gwilliam R, Cowern NEB, Sealy BJ. Differential Hall profiling of ultra-shallow junctions in Si and SOI Materials Science and Engineering B-Advanced Functional Solid-State Materials. 124: 305-309. DOI: 10.1016/J.Mseb.2005.08.020  0.406
2004 Coleman PG, Pi XD, Gwilliam RM, Sealy BJ. Nanocrystalline Si studied by beam-based positron annihilation spectroscopy Materials Science Forum. 445: 66-68. DOI: 10.4028/Www.Scientific.Net/Msf.445-446.66  0.415
2004 Alzanki T, Gwilliam R, Emerson N, Sealy BJ, Collart E. Electrical profiles of ultra-low energy antimony implants in silicon Materials Research Society Symposium - Proceedings. 810: 241-246. DOI: 10.1557/Proc-810-C5.7  0.474
2004 Smith AJ, Colombeau B, Gwilliam R, Collart E, Cowern NEB, Sealy BJ. Doping and mobility profiles in defect-engineered ultra-shallow junctions: Bulk and SOI Materials Research Society Symposium - Proceedings. 810: 109-114. DOI: 10.1557/Proc-810-C3.8  0.489
2004 Alzanki T, Gwilliam R, Emerson N, Tabatabaian Z, Jeynes C, Sealy BJ. Concentration profiles of antimony-doped shallow layers in silicon Semiconductor Science and Technology. 19: 728-732. DOI: 10.1088/0268-1242/19/6/012  0.443
2004 Alzanki T, Gwilliam R, Emerson N, Sealy BJ. Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon Applied Physics Letters. 85: 1979-1980. DOI: 10.1063/1.1792378  0.434
2004 Claudio G, Kirkby KJ, Bersani M, Low R, Sealy BJ, Gwilliam R. Effect of the tilt angle on antimony in silicon implanted wafers Journal of Applied Physics. 95: 5471-5474. DOI: 10.1063/1.1702096  0.421
2004 Too P, Ahmed S, Gwilliam R, Sealy BJ. Electrical isolation of InP and InGaAs using iron and krypton Electronics Letters. 40: 1302-1304. DOI: 10.1049/El:20045922  0.436
2004 Alzanki T, Gwilliam R, Emerson N, Sealy BJ. Carrier and mobility profiling of ultra-shallow junctions in sb implanted silicon Electronics Letters. 40: 774-775. DOI: 10.1049/El:20040493  0.474
2004 Bolorizadeh MA, Ruffell S, Mitchell IV, Gwilliam R. Quantitative depth profiling of ultra-shallow phosphorus implants in silicon using time-of-flight secondary ion mass spectrometry and the nuclear reaction 31P(α,p0)34S Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 225: 345-352. DOI: 10.1016/J.Nimb.2004.04.180  0.407
2004 Alzanki T, Gwilliam R, Emerson NG, Sealy BJ. Low-temperature processing of antimony-implanted silicon Journal of Electronic Materials. 33: 767-769. DOI: 10.1007/S11664-004-0238-Z  0.469
2003 Pi XD, Burrows CP, Coleman PG, Gwilliam RM, Sealy BJ. Oxygen-related vacancy-type defects in ion-implanted silicon Journal of Physics Condensed Matter. 15. DOI: 10.1088/0953-8984/15/39/007  0.382
2003 Ahmed S, Sealy BJ, Gwilliam R. Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 206: 1008-1012. DOI: 10.1016/S0168-583X(03)00923-6  0.367
2003 Ahmed S, Sealy BJ, Gwilliam R. Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 206: 1003-1007. DOI: 10.1016/S0168-583X(03)00922-4  0.4
2003 Webb RP, Winston SH, Gwilliam RM, Sealy BJ, Boudreault G, Jeynes C, Kirkby KJ. Comparison of boron halide, decaborane and B implants in Si from molecular dynamics simulations Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 202: 143-148. DOI: 10.1016/S0168-583X(02)01844-X  0.341
2003 Too P, Ahmed S, Sealy BJ, Gwilliam R. Electrical isolation of p-type InP and InGaAs layers by iron implantation: Effects of substrate temperature Institute of Physics Conference Series. 174: 41-44.  0.363
2003 Pantouvaki M, Gwilliam R, Burr EP, Krysa AB, Roberts JS, Seeds AJ. Ultrafast recovery times and increased absorption nonlinearity in InGaAsP MQW saturable absorbers implanted at 200°C Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 355-358.  0.313
2002 Phelps GJ, Wright NG, Chester EG, Johnson CM, O’Neill AG, Ortolland S, Horsfall AB, Vassilevski K, Gwilliam RM. Enhanced dopant diffusion effects in 4H silicon carbide Materials Science Forum. 389: 855-858. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.855  0.317
2002 Horsfall AB, Vassilevski K, Johnson CM, Wright NG, O'Neill AG, Gwilliam R. Optimisation of implanted guard-ring terminations in 4H-SiC Schottky diodes Materials Science Forum. 1149-1152. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1149  0.358
2002 Gwilliam RM, Knights AP, Burrows CP, Coleman PG. Room-temperature evolution of vacancy-type damage created by 2 keV B+ implantation of Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 427-430. DOI: 10.1116/1.1447249  0.367
2002 Claudio G, Jeynes C, Kirkby KJ, Sealy BJ, Gwilliam R, Low R. Electrical behaviour of arsenic implanted silicon wafers at large tilt angle Proceedings of the International Conference On Ion Implantation Technology. 22: 614-617. DOI: 10.1109/IIT.2002.1258080  0.355
2002 Too P, Ahmed S, Sealy BJ, Gwilliam R. An effective electrical isolation scheme by iron implantation at different substrate temperatures Proceedings of the International Conference On Ion Implantation Technology. 22: 610-613. DOI: 10.1109/IIT.2002.1258079  0.351
2002 Butler TM, McKinty CN, Homewood KP, Gwilliam RM, Kirkby KJ, Shao G, Edwards S. Effect of implant conditions on the optical and structural properties of β-FeSi2 Proceedings of the International Conference On Ion Implantation Technology. 22: 579-582. DOI: 10.1109/IIT.2002.1258071  0.369
2002 Gennaro S, Sealy BJ, Jeynes C, Gwilliam R, Collart EHJ, Licciardello A. Effects of carbon content and annealing conditions, on the electrical activation of indium implanted silicon Proceedings of the International Conference On Ion Implantation Technology. 22: 552-555. DOI: 10.1109/IIT.2002.1258064  0.374
2002 Winston SH, Gwilliam RM, Sealy BJ, Boudreault G, Jeynes C, Webb RP, Kirkby KJ. Evaluation of the boron activation and depth distribution using BBr2+ implants Proceedings of the International Conference On Ion Implantation Technology. 22: 115-118. DOI: 10.1109/IIT.2002.1257952  0.344
2002 Ahmed S, Sealy BJ, Gwilliam R. Electrical isolation of n-GaAs by proton implantation - Effects of doping implant, isolation implant and implant temperature Proceedings of the International Conference On Ion Implantation Technology. 22: 60-63. DOI: 10.1109/IIT.2002.1257938  0.374
2002 Van Tuyen V, Subramaniam SC, Hu Z, Rezazadeh AA, Gwilliam R. On the study of electrical isolation of multi-layer GaAs planar doped barrier diode structures by proton bombardment Ieee International Symposium On Electron Devices For Microwave and Optoelectronic Applications. 2002: 311-315. DOI: 10.1109/EDMO.2002.1174977  0.312
2002 Too P, Ahmed S, Sealy BJ, Gwilliam R. Comparison of two different isolation schemes for n-type InP by helium implantation Ieee International Symposium On Electron Devices For Microwave and Optoelectronic Applications. 2002: 160-165. DOI: 10.1109/EDMO.2002.1174948  0.326
2002 Ahmed S, Sealy BJ, Gwilliam R. Electrical isolation of n-type GaAs devices by MeV/MeV-like implantation of various ion species Ieee International Symposium On Electron Devices For Microwave and Optoelectronic Applications. 2002: 18-23. DOI: 10.1109/EDMO.2002.1174924  0.354
2002 Too P, Ahmed S, Sealy BJ, Gwilliam R. Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures Applied Physics Letters. 80: 3745-3747. DOI: 10.1063/1.1480879  0.48
2002 Too P, Ahmed S, Jeynes C, Sealy BJ, Gwilliam R. Electrical isolation of n-type InP using MeV iron implantation at different doses and substrate temperatures Electronics Letters. 38: 1225-1226. DOI: 10.1049/El:20020803  0.461
2002 Ahmed S, Sealy BJ, Gwilliam R. Dose dependence of proton-isolated n-type GaAs layers implanted at room temperature and 200°C Electronics Letters. 38: 250-252. DOI: 10.1049/El:20020154  0.405
2002 Too P, Ahmed S, Gwilliam R, Sealy BJ. Electrical isolation of n-type InP layers by helium implantation at variable substrate temperatures Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 188: 205-209. DOI: 10.1016/S0168-583X(01)01091-6  0.464
2002 Ahmed S, Gwilliam R, Sealy BJ. Implant isolation in GaAs device technology: Effect of substrate temperature Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 188: 196-200. DOI: 10.1016/S0168-583X(01)01086-2  0.476
2002 Ahmed S, Too P, Sealy BJ, Gwilliam R. Proton implantation for effective electrical isolation of InP, InGaAs and GaAs: Role of variable doses and implant temperature Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 225-228.  0.333
2002 Subramaniam SC, Rezazadeh AA, Too P, Ahmed S, Sealy BJ, Gwilliam R. Annealing characteristics of He+-ion implant isolation of InP/InGaAs HBT structures Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 205-208.  0.371
2001 Ng WL, Lourenço MA, Gwilliam RM, Ledain S, Shao G, Homewood KP. An efficient room-temperature silicon-based light-emitting diode Nature. 410: 192-194. PMID 11242075 DOI: 10.1038/35065571  0.334
2001 Gwilliam RM. Current trends in ion implantation Materials Science Forum. 363: 20-24. DOI: 10.4028/Www.Scientific.Net/Msf.363-365.20  0.433
2001 Ahmed S, Gwilliam R, Sealy BJ. Proton implantation for isolation of n-type GaAs layers at different substrate temperatures Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/5/103  0.478
2001 Ahmed S, Knights AP, Gwilliam R, Sealy BJ. The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/3/102  0.444
2001 Ahmed S, Gwilliam R, Sealy BJ. Ion-beam-induced isolation of GaAs layers by 4He+ implantation: Effects of hot implants Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/10/102  0.474
2001 Ahmed S, Too P, Gwilliam R, Sealy BJ. Electrical isolation of n-type GaAs and InP using helium ion irradiation at variable target temperatures Applied Physics Letters. 79: 3533-3535. DOI: 10.1063/1.1420779  0.426
2001 Chen YL, Shao G, Sharpe J, Gwilliam RM, Reeson Kirkby K, Homewood KP, Goringe MJ. Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ions Journal of Materials Science. 36: 321-327. DOI: 10.1023/A:1004803907430  0.377
2001 Curry RJ, Gillin WP, Knights AP, Gwilliam R. 1.5 μm electroluminescence from organic light emitting diodes integrated on silicon substrates Optical Materials. 17: 161-163. DOI: 10.1016/S0925-3467(01)00077-5  0.39
2001 Lourenço MA, Butler TM, Kewell AK, Gwilliam RM, Kirkby KJ, Homewood KP. Electrical, electronic and optical characterisation of ion beam synthesised β-FeSi2 light emitting devices Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 159-163. DOI: 10.1016/S0168-583X(00)00663-7  0.33
2001 Lourenço MA, Knights AP, Homewood KP, Gwilliam RM, Simpson PJ, Mascher P. A comparative study of vacancies produced by proton implantation of silicon using positron annihilation and deep level transient spectroscopy Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 300-304. DOI: 10.1016/S0168-583X(00)00640-6  0.309
2001 Milosavljevic M, Shao G, Gwilliam RM, Jeynes C, McKinty CN, Homewood KP. Properties of β-FeSi2 grown by combined ion irradiation and annealing of Fe/Si bilayers Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 309-313. DOI: 10.1016/S0168-583X(00)00639-X  0.32
2001 Gwilliam RM, Knights AP, Nejim A, Sealy BJ, Burrows CP, Malik F, Coleman PG. The study of lattice damage using slow positrons following low energy B+ implantation of silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 175: 62-67. DOI: 10.1016/S0168-583X(00)00528-0  0.376
2001 Ahmed S, Gwilliam R, Sealy BJ. An effective electrical isolation scheme by oxygen implantation-effect of damage accumulation and target temperature Workshop On High Performance Electron Devices For Microwave and Optoelectronic Applications, Edmo. 43-48.  0.337
2001 Too P, Ahmed S, Gwilliam R, Sealy BJ. Implant isolation of InP and InGaAs by proton irradiation at variable doses and substrate temperatures Workshop On High Performance Electron Devices For Microwave and Optoelectronic Applications, Edmo. 125-130.  0.359
2001 Liu CL, Sealy BJ, Nejim A, Gwilliam RM. Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon Kao Neng Wu Li Yu Ho Wu Li/High Energy Physics and Nuclear Physics. 25: 1243-1244.  0.384
2001 Emerson NG, Gwilliam RM, Sealy BJ. Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials Journal of Electronic Materials. 30.  0.373
2000 Curry RJ, Gillin WP, Knights AP, Gwilliam R. Silicon-based organic light-emitting diode operating at a wavelength of 1.5 μm Applied Physics Letters. 77: 2271-2273. DOI: 10.1063/1.1316064  0.348
1999 Knights A, Morrison D, Wright N, Johnson C, O'Neill A, Ortolland S, Homewood K, Lourenco M, Gwilliam R, Coleman P. The Effect of Annealing on Argon Implanted Edge Terminations for 4H-SiC Schottky Diodes Mrs Proceedings. 572: 129. DOI: 10.1557/Proc-572-129  0.412
1999 Knights AP, Malik F, Coleman PG, Gwilliam R, Sealy BJ. Applying slow positrons to the study of ion implantation induced defects in GaAs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 66: 146-150. DOI: 10.1016/S0921-5107(99)00089-6  0.483
1999 Hutchinson S, Kelly MJ, Gwilliam R, Sealy BJ, Carr M. Bulk unipolar diodes formed in GaAs by ion implantation Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 148: 478-480. DOI: 10.1016/S0168-583X(98)00709-5  0.437
1999 Hutchinson S, Gwilliam R, Kelly MJ, Sealy BJ, Chew A, Stephens J. Acceptor profile control in GaAs using co-implantation of Zn and P Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 148: 459-462. DOI: 10.1016/S0168-583X(98)00674-0  0.395
1999 Coleman PG, Knights AP, Gwilliam RM. Diagnostic measurement of ion implantation dose and uniformity with a laboratory-based positron probe Journal of Applied Physics. 86: 5988-5992.  0.302
1998 Knights AP, Nejim A, Barradas NP, Gwilliam R, Coleman PG, Malik F, Kherandish H, Romani S. Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling Mrs Proceedings. 532. DOI: 10.1557/Proc-532-79  0.467
1998 Malik F, Coleman PG, Knights AP, Gwilliam R, Nejim A, Ho OY. Positron spectroscopy of vacancy-type defects in Si created by 5 keV B+ implantation Journal of Physics Condensed Matter. 10: 10403-10408. DOI: 10.1088/0953-8984/10/46/008  0.489
1998 Knights AP, Apiwatwaja R, Gwilliam R, Sealy BJ, Coleman PG. A study of the evolution of carrier and vacancy depth profiles with annealing temperature of Si-implanted GaAs Semiconductor Science and Technology. 13: 1266-1271. DOI: 10.1088/0268-1242/13/11/006  0.467
1998 Alves E, Silva MFd, Soares JC, Henry MO, Gwilliam R, Sealy BJ, Freitag K, Vianden R, Stievenard D. Lattice site location of thulium and erbium implanted GaAs Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 421-425. DOI: 10.1016/S0168-583X(97)00715-5  0.369
1998 Sealy B, Gwilliam R, Shannon J, Jeynes C, Angelov C, Tsvetkova T. Surface electrical conductivity of Co+-implanted a-SiC : H films Vacuum. 51: 281-284. DOI: 10.1016/S0042-207X(98)00175-4  0.399
1998 Gwilliam RM, Hutchinson S, Shannon JM, Emerson NG, Sealy BJ. Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation Electronics Letters. 34: 2441-2442.  0.372
1997 Rahrlack G, Freitag K, Von Nathusius C, Vianden R, Gwilliam R, Sealy BJ. Hall effect measurements on transmutation doped semiconductors Materials Science Forum. 248: 119-124. DOI: 10.4028/Www.Scientific.Net/Msf.248-249.119  0.456
1997 Billen K, Kelly MJ, Gwilliam RM, Hutchinson S, Henini M. The electronic transport through ion-implanted double-barrier diodes Semiconductor Science and Technology. 12: 1282-1290. DOI: 10.1088/0268-1242/12/10/016  0.364
1997 Billen K, Kelly MJ, Gwilliam RM, Hutchinson S, Eaves L, Henini M, Foster TJ. Multi-stage annealing of defects in ion-implanted double-barrier diodes Semiconductor Science and Technology. 12: 1273-1281. DOI: 10.1088/0268-1242/12/10/015  0.328
1997 Apiwatwaja R, Gwilliam R, Wilson R, Sealy BJ. Activation modeling of Si implanted GaAs Journal of Applied Physics. 81: 1131-1134. DOI: 10.1063/1.363858  0.489
1997 Curello G, Gwilliam R, Harry M, Sealy BJ, Rodriguez T. Thermal evolution of ion beam synthesised CoSi2 layers in Si0.64Ge0.36 alloy Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 328-332. DOI: 10.1016/S0168-583X(97)00950-6  0.486
1997 Curello G, Gwilliam R, Harry M, Jackson S, Sealy BJ. Beam-power heating effect on the synthesis of graded composition epitaxial Si1−xGex alloy layers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 129: 377-386. DOI: 10.1016/S0168-583X(97)00326-1  0.499
1997 Curello G, Gwilliam R, Harry M, Sealy BJ, Rodriguez T. Thermal evolution of ion beam synthesised CoSi2 layers in Si0.64Ge0.36 alloy Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 127: 328-332.  0.391
1997 Curello G, Gwilliam R, Harry M, Jackson S, Sealy BJ. Beam-power heating effect on the synthesis of graded composition epitaxial Si1-xGex alloy layers Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 129: 377-386.  0.418
1997 Chen SM, Gwilliam RM, Sealy BJ. MOS device fabrication via plasma immersion ion implantation Solid-State Electronics. 41: 535-537.  0.348
1997 Chen SM, Shannon JM, Gwilliam RM, Sealy BJ. Electrical characterization of silicon nitride produced by plasma immersion ion implantation Surface and Coatings Technology. 93: 269-273.  0.336
1997 Chen SM, Shannon JM, Gwilliam RM, Sealy BJ. Electrical effects of nitrogen plasma immersion ion implantation on silicon Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 127: 901-904.  0.417
1997 Webb RP, Foad MA, Gwilliam RM, Knights AP, Thomas G. Anomalous diffusion of ultra low energy boron implants in silicon Materials Research Society Symposium - Proceedings. 469: 59-63.  0.335
1996 Daly SE, Henry MO, Alves E, Soares JC, Gwilliam R, Sealy BJ, Freitag K, Vianden R, Stievenard D. Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs Mrs Proceedings. 422: 173. DOI: 10.1557/Proc-422-173  0.404
1996 Rohrlack G, Freitag K, Vianden R, Gwilliam R, Sealy BJ, Jafri Z. Recrystallisation of preamorphized silicon investigated by RBS and PAC Materials Research Society Symposium - Proceedings. 420: 313-316. DOI: 10.1557/Proc-420-313  0.449
1996 Komoda T, Kelly J, Gwilliam R, Hemment P, Sealy B. Effect of the gas ambient on the intensity of the visible photoluminescence from Si microcrystallites in a SiO2 matrix formed by ion implantation Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 112: 219-222. DOI: 10.1016/0168-583X(95)01002-5  0.359
1996 Curello G, Gwilliam R, Harry M, Sealy BJ, Rodriguez T, Clement M. Ion beam processed Ir/SiGe structures Materials Research Society Symposium - Proceedings. 402: 393-398.  0.402
1996 Billen K, Kelly MJ, Gwilliam RM, Wilson RJ, Henini M. Moderate-dose proton implantation through double-barrier structures Electronics Letters. 32: 140-141.  0.324
1996 Gwilliam RM, Anjum M, Sealy BJ, Mynard JE, Chereckdjian S. Electrical characterization of magnesium and tellurium implanted indium gallium arsenide Proceedings of the International Conference On Ion Implantation Technology. 702-704.  0.357
1995 Curello G, Gwilliam R, Harry M, Wilson RJ, Sealy BJ, Rodriguez T, Jimenez-Leube J. Iridium Silicides Formation on High Doses Ge+ Implanted Si Layers Mrs Proceedings. 402. DOI: 10.1557/Proc-402-411  0.495
1995 Hutchinson S, Carr M, Gwilliam R, Kelly MJ, Sealy BJ. Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes Electronics Letters. 31: 583-585. DOI: 10.1049/El:19950401  0.414
1995 Rohrlack G, Freitag K, Vianden R, Gwilliam R, Sealy BJ, Correia JG, Forkel-Wirth D. Time dependent electrical properties of GaAs doped with radioactive isotopes 67Ga and 71As Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 106: 267-270. DOI: 10.1016/0168-583X(96)80023-1  0.332
1995 Sealy BJ, Gwilliam RM, Reeson KJ, Mynard JE, Stephens KG. Recent developments in the use of ion beams at Surrey Nuclear Inst. and Methods in Physics Research, B. 99: 580-582. DOI: 10.1016/0168-583X(95)00765-2  0.39
1995 Gwilliam R, Apiwatwaja R, Wilson R, Sealy BJ. Silicon implant annealing kinetics in GaAs Nuclear Inst. and Methods in Physics Research, B. 106: 318-322. DOI: 10.1016/0168-583X(95)00726-1  0.492
1995 Komoda T, Kelly J, Cristiano F, Nejim A, Hemment PLF, Homewood KP, Gwilliam R, Mynard JE, Sealy BJ. Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation Nuclear Inst. and Methods in Physics Research, B. 96: 387-391. DOI: 10.1016/0168-583X(94)00525-7  0.492
1995 Curello G, Gwilliam R, Harry M, Reeson KJ, Sealy BJ, Rodriguez T, Almendra A. Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing Journal of Crystal Growth. 157: 236-241. DOI: 10.1016/0022-0248(95)00410-6  0.404
1993 Finney MS, Yang Z, Harry MA, Reeson KJ, Homewood KP, Gwilliam RM, Sealy BJ. Effects of annealing and cobalt implantation on the optical properties of βFeSi2. Mrs Proceedings. 316. DOI: 10.1557/PROC-316-433  0.354
1993 Meekison CD, Booker GR, Reeson KJ, Spraggs RS, Gwilliam RM, Sealy BJ. Microstructural studies of epitaxial CoSi2layers on silicon produced by ion beam synthesis and rapid thermal annealing Journal of Applied Physics. 74: 7129-7133. DOI: 10.1063/1.355029  0.311
1993 Gillin WP, Bradley IV, Howard LK, Gwilliam R, Homewood KP. The effects of silicon and beryllium on the interdiffusion of GaAs/ Al xGa1-xAs and InxGa1-xAs/GaAs quantum well structures Journal of Applied Physics. 73: 7715-7719. DOI: 10.1063/1.353969  0.43
1993 Vianden R, Gwilliam R, Sealy B. Incorporation of In into Si preamorphized with Si, Ge and Sn Nuclear Inst. and Methods in Physics Research, B. 80: 644-646. DOI: 10.1016/0168-583X(93)96200-V  0.502
1993 Zhang J, Fan T, Gwilliam R, Hemment P, Wen J, Qian Y, Efeoglu H, Evans J, Peaker A. Structural defects and their electrical activity in germanium implanted silicon Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 74: 127-130. DOI: 10.1016/0168-583X(93)95028-4  0.339
1993 Gwilliam RM, Wilson RJ, Hunt TD, Sealy BJ. The use of multi-species implantation for carrier profile control in GaAs MESFETs fabricated using silicon ion implantation Nuclear Inst. and Methods in Physics Research, B. 74: 94-97. DOI: 10.1016/0168-583X(93)95021-V  0.426
1993 Kozanecki A, Scaly BJ, Gwilliam R, Kidd P. X-ray and channeling analysis of ion implanted gallium arsenide Nuclear Inst. and Methods in Physics Research, B. 80: 798-801. DOI: 10.1016/0168-583X(93)90685-Y  0.332
1993 Hunt TD, Reeson KJ, Gwilliam RM, Homewood KP, Wilson RJ, Sealy BJ. Investigation of the luminescence properties of Si/βFeSi2/Si heterojunction structures fabricated by ion beam synthesis Journal of Luminescence. 57: 25-27. DOI: 10.1016/0022-2313(93)90100-2  0.355
1992 Hunt TD, Sealy BJ, Hanebeck J, Reeson KJ, Homewood KP, Gwilliam RM, Meekison CD, Roger Booker G. Fabrication and Evaluation of Ternary Co-Fe-Si Structures Produced by Ion Beam Synthesis Mrs Proceedings. 279. DOI: 10.1557/PROC-279-893  0.389
1992 Hunt TD, Reeson KJ, Gwilliam RM, Homewood KP, Wilson RJ, Spraggs RS, Sealy BJ, Meekison CD, Booker GR, Oberschachtsiek P. Determination of the Optical & Materials Properties of βFeSi2 Layers Fabricated Using Ion Beam Synthesis Mrs Proceedings. 260. DOI: 10.1557/PROC-260-239  0.392
1992 Spraggs RS, Pananakakis G, Bauza D, Reeson KJ, Gwilliam RM, Hunt TD, Sealy BJ. Electrical Characterization of Phosphorus Doped Ion Beam Synthesised CoSi2/Si Schottky Barrier Diodes. Mrs Proceedings. 260. DOI: 10.1557/PROC-260-169  0.388
1992 Reeson KJ, Spraggs RS, Gwilliam RM, Sealy BJ. Analysis of the structure and defects in heteroepitaxial Si/CoSi2/Si layers produced by ion beam synthesis and rapid thermal annealing Materials Science and Engineering B. 12: 123-127. DOI: 10.1016/0921-5107(92)90271-A  0.374
1992 Reeson KJ, Spraggs RS, Gwilliam RM, Sealy BJ. Ion beam synthesis of epitaxial CoSi2 layers and the redistribution of dopants within them Nuclear Inst. and Methods in Physics Research, B. 68: 369-379. DOI: 10.1016/0168-583X(92)96108-B  0.343
1992 Fan TW, Zhang JP, Gwilliam RM, Hemment PLF. Secondary defects in recrystallised 400 keV Ge+ ion implanted Si Nuclear Inst. and Methods in Physics Research, B. 71: 17-21. DOI: 10.1016/0168-583X(92)95334-N  0.435
1992 Wilson RJ, Sealy BJ, Gwilliam RM. The effect of high energy boron co-implantation on the activation of silicon implants in GaAs Nuclear Inst. and Methods in Physics Research, B. 62: 361-363. DOI: 10.1016/0168-583X(92)95257-R  0.386
1992 Gwilliam R, Sealy BJ, Vianden R. The electrical and radioactive assessment of the transmutation doping of GaAs following implantation by 111In Nuclear Inst. and Methods in Physics Research, B. 63: 106-108. DOI: 10.1016/0168-583X(92)95178-T  0.374
1991 Gwilliam RM, Reeson KJ, Webb RP, Spraggs RS, Sealy BJ. Dependence of Substrate Orientation on the Synthesis of CoSi2 Layers Formed by Ion Implantation & Rapid Thermal Annealing Mrs Proceedings. 224. DOI: 10.1557/PROC-224-103  0.363
1991 Hašlar V, Seidl P, Hazdra P, Gwilliam R, Sealy B. Shallow junction formation by dual Ge/B, Sn/B and Pb/B implants Nuclear Inst. and Methods in Physics Research, B. 55: 569-572. DOI: 10.1016/0168-583X(91)96232-A  0.414
1991 Stephens KG, Sealy BJ, Gwilliam RM, Reeson KJ. High energy implantation at the University of Surrey Nuclear Inst. and Methods in Physics Research, B. 56: 630-633. DOI: 10.1016/0168-583X(91)96112-X  0.336
1991 Marsh JH, Bradshaw SA, Bryce AC, Gwilliam R, Glew RW. Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP . 592-595. DOI: 10.1007/Bf03030191  0.415
1991 Bryce AC, Marsh JH, Gwilliam R, Glew RW. Impurity induced disordering in InGaAs/InGaAlAs quantum wells using implanted fluorine and boron Iee Proceedings. Part J, Optoelectronics. 138: 87-90.  0.339
1990 De Veirman A, Van Landuyt J, Reeson KJ, Gwilliam R, Jeynes C, Sealy BJ. Identification of CoSi inclusions within buried CoSi2 layers formed by ion implantation Journal of Applied Physics. 68: 3792-3794. DOI: 10.1063/1.346308  0.468
1990 Stephens KG, Reeson KJ, Sealy BJ, Gwilliam RM, Hemment PLF. The formation of compound layers in silicon by ion beam synthesis Nuclear Inst. and Methods in Physics Research, B. 50: 368-378. DOI: 10.1016/0168-583X(90)90383-6  0.37
1989 Reeson KJ, Veirman AD, Gwilliam R, Jeynes C, Sealy BJ, Landuyt J, Bussmann U, Lindner JKN, Kaat EHt. Fabrication of High Quality Silicide Layers by Ion Implantation Mrs Proceedings. 147. DOI: 10.1557/PROC-147-217  0.327
1989 Gwilliam RM, Ma MX, Mynard JE, Whitehead NJ, Sealy BJ, Blunt RT. Megaelectronvolt implants into GaAs using a hot-cathode penning ion source Materials Science and Engineering B. 2: 249-253. DOI: 10.1016/0921-5107(89)90105-0  0.37
1989 Whitehead N, Gwilliam R, Gillin W, Sealy B. The use of Hall effect profiling to monitor the reactivation of silicon implants after oxygen implantation in gallium arsenide Vacuum. 39: 1149-1151. DOI: 10.1016/0042-207X(89)91110-X  0.412
1987 Gwilliam R, Deol RS, Blunt R, Sealy BJ. Si implants into Preamorphised GaAs Mrs Proceedings. 92. DOI: 10.1557/Proc-92-437  0.485
1986 Gwilliam R, Shahid MA, Sealy BJ. STUDY OF Se** plus IMPLANTS INTO ENCAPSULATED GaAs Materials Research Society Symposia Proceedings. 52: 391-396.  0.392
1985 Gwilliam R, Shahid MA, Sealy BJ. A Study of Se+ Implants into Encapsulated GaAs Mrs Proceedings. 52. DOI: 10.1557/PROC-52-391  0.398
1985 Shahid M, Gwilliam R, Sealy B. Se+ ion implantation into encapsulated GaAs Electronics Letters. 21: 729. DOI: 10.1049/EL:19850514  0.32
1985 Gwilliam R, Bensalem R, Sealy B, Stephens K. Transient annealing for the production of n+ contact layers in GaAs Physica B+C. 129: 440-444. DOI: 10.1016/0378-4363(85)90619-9  0.407
1985 Shahid MA, Gwilliam R, Sealy BJ. SE** plus ION IMPLANTATION INTO ENCAPSULATED GaAs Electronics Letters. 21: 729-730.  0.448
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