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Kok-Keong Lew, Ph.D. - Publications

Affiliations: 
2005 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering
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40 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Hutagalung SD, Lew KC, Darsono T. Nanoscale patterning by afm lithography and its application on the fabrication of silicon nanowire devices Sains Malaysiana. 43: 267-272.  0.376
2012 Hutagalung SD, Lew KC. Effect of TMAH etching duration on the formation of silicon nanowire transistor patterned by AFM nanolithography Sains Malaysiana. 41: 1023-1028.  0.464
2011 Hutagalung SD, Lew KC. Current-voltage characteristics of side-gated silicon nanowire transistor fabricated by AFM lithography Advanced Materials Research. 277: 84-89. DOI: 10.4028/www.scientific.net/AMR.277.84  0.373
2010 Lew KC, Hutagalung SD. Silicon nanowire transistor fabricated by AFM nanolithography followed by wet chemical etching process International Journal of Nanoscience. 9: 289-293. DOI: 10.1142/S0219581X1000682X  0.422
2010 Hutagalung SD, Lew KC. Electrical characteristics of silicon nanowire transistor fabricated by AFM lithography Ieee International Conference On Semiconductor Electronics, Proceedings, Icse. 358-362. DOI: 10.1109/SMELEC.2010.5549507  0.425
2009 Redwing JM, Nimmatoori P, Lew KK, Zhang X, Zhang Q, Clark TE, Pan L, Dickey EC. Growth mechanisms and size-dependent characteristics of Si and Si 1-xGex nanowires Ecs Transactions. 25: 1145-1152. DOI: 10.1149/1.3207718  0.813
2009 Chen KP, Yoon SF, Ng TK, Tanoto H, Lew KL, Dohrman CL, Fitzgerald EA. Study of surface microstructure origin and evolution for GaAs grown on Ge/Si1-xGex/Si substrate Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/3/035303  0.409
2009 Tanoto H, Yoon SF, Lew KL, Loke WK, Dohrman C, Fitzgerald EA, Tang LJ. Electroluminescence and structural characteristics of InAs/ In0.1 Ga0.9 As quantum dots grown on graded Si1-x Gex /Si substrate Applied Physics Letters. 95. DOI: 10.1063/1.3243984  0.352
2009 VanMil BL, Lew KK, Myers-Ward RL, Holm RT, Gaskill DK, Eddy CR, Wang L, Zhao P. Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8 Journal of Crystal Growth. 311: 238-243. DOI: 10.1016/j.jcrysgro.2008.11.030  0.354
2009 Ng TK, Yoon SF, Tan KH, Chen KP, Tanoto H, Lew KL, Wicaksono S, Loke WK, Dohrman C, Fitzgerald EA. Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate Journal of Crystal Growth. 311: 1754-1757. DOI: 10.1016/J.Jcrysgro.2008.09.207  0.4
2008 Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059  0.746
2008 Li M, Bhiladvala RB, Morrow TJ, Sioss JA, Lew KK, Redwing JM, Keating CD, Mayer TS. Bottom-up assembly of large-area nanowire resonator arrays. Nature Nanotechnology. 3: 88-92. PMID 18654467 DOI: 10.1038/Nnano.2008.26  0.562
2008 Clark TE, Nimmatoori P, Lew KK, Pan L, Redwing JM, Dickey EC. Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires. Nano Letters. 8: 1246-52. PMID 18321076 DOI: 10.1021/Nl072849K  0.799
2008 VanMil BL, Stahlbush RE, Myers-Ward RL, Lew KK, Eddy CR, Gaskill DK. Basal plane dislocation reduction for 8° off-cut, 4H-SiC using in situ variable temperature growth interruptions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1504-1507. DOI: 10.1116/1.2918317  0.327
2008 Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333  0.754
2008 Hu J, Xin X, Li X, Zhao JH, VanMil BL, Lew KK, Myers-Ward RL, Eddy CR, Gaskill DK. 4H-SiC visible-blind single-photon avalanche diode for ultraviolet detection at 280 and 350 nm Ieee Transactions On Electron Devices. 55: 1977-1983. DOI: 10.1109/Ted.2008.926669  0.314
2008 Chen KP, Yoon SF, Ng TK, Tanoto H, Lew KL, Dohrman CL, Fitzgerald EA. Characterization of GaAs grown on SiGe/Si graded substrates using p-n junction diodes Journal of Applied Physics. 104. DOI: 10.1063/1.2988294  0.485
2008 Lew KL, Yoon SF, Tanoto H, Chen KP, Dohrman CL, Isaacson DM, Fitzgerald EA. InGaP/GaAs heterojunction bipolar transistor grown on Si substrate with SiGe graded buffer layer Electronics Letters. 44: 243-244. DOI: 10.1049/El:20083328  0.418
2008 Lu Q, Adu KW, Gutiérrez HR, Chen G, Lew KK, Nimmatoori P, Zhang X, Dickey EC, Redwing JM, Eklund PC. Raman scattering from Si1-xGex alloy nanowires Journal of Physical Chemistry C. 112: 3209-3215. DOI: 10.1021/Jp074764D  0.786
2008 Vanmil BL, Lew KK, Myers-Ward RL, Eddy CR, Gaskill DK. Real-time in situ tracking of gas-phase carbon-to-silicon ratio during hot-wall CVD growth of SiC Journal of Electronic Materials. 37: 685-690. DOI: 10.1007/s11664-007-0306-2  0.389
2007 Zhang X, Lew KK, Nimmatoori P, Redwing JM, Dickey EC. Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires. Nano Letters. 7: 3241-5. PMID 17894516 DOI: 10.1021/Nl071132U  0.769
2007 Goodey AP, Eichfeld SM, Lew KK, Redwing JM, Mallouk TE. Silicon nanowire array photelectrochemical cells. Journal of the American Chemical Society. 129: 12344-5. PMID 17892289 DOI: 10.1021/Ja073125D  0.8
2007 Lew KL, Yoon SF, Loke WK, Tanoto H, Dohrman CL, Isaacson DM, Fitzgerald EA. High gain AlGaAsGaAs heterojunction bipolar transistor fabricated on SiGeSi substrate Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 902-905. DOI: 10.1116/1.2740278  0.305
2007 Ho TT, Wang Y, Liu B, Eichfeld S, Lew KK, Mohney S, Redwing J, Mayer T. Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422515  0.737
2006 Lew KK, Pan L, Dickey EC, Redwing JM. Effect of growth conditions on the composition and structure of Si1-xGex nanowires grown by vapor-liquid-solid growth Journal of Materials Research. 21: 2876-2881. DOI: 10.1557/Jmr.2006.0349  0.748
2006 Shir D, Liu BZ, Mohammad AM, Lew KK, Mohney SE. Oxidation of silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1333-1336. DOI: 10.1116/1.2198847  0.399
2005 Wang Y, Lew KK, Ho TT, Pan L, Novak SW, Dickey EC, Redwing JM, Mayer TS. Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires. Nano Letters. 5: 2139-43. PMID 16277441 DOI: 10.1021/Nl051442H  0.598
2005 Pan L, Lew KK, Redwing JM, Dickey EC. Stranski-Krastanow growth of germanium on silicon nanowires. Nano Letters. 5: 1081-5. PMID 15943447 DOI: 10.1021/Nl050605Z  0.752
2005 Dilts SM, Mohmmad A, Lew KK, Redwing JM, Mohney SE. Fabrication and electrical characterization of silicon nanowire arrays Materials Research Society Symposium Proceedings. 832: 287-292. DOI: 10.1557/Proc-832-F9.10  0.687
2005 Redwing JM, Dilts SM, Lew KK, Cranmer A, Mohney SE. High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.632745  0.691
2005 Wang Y, Lew KK, Mattzela J, Redwing J, Mayer T. Top-gated field effect devices using oxidized silicon nanowires Device Research Conference - Conference Digest, Drc. 2005: 159-160. DOI: 10.1109/DRC.2005.1553101  0.413
2005 Pan L, Lew KK, Redwing JM, Dickey EC. Effect of diborane on the microstructure of boron-doped silicon nanowires Journal of Crystal Growth. 277: 428-436. DOI: 10.1016/J.Jcrysgro.2005.01.091  0.73
2005 Bogart TE, Dey S, Lew KK, Mohney SE, Redwing JM. Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes Advanced Materials. 17: 114-117. DOI: 10.1002/Adma.200400373  0.587
2004 Lew KK, Pan L, Bogart TE, Dilts SM, Dickey EC, Redwing JM, Wang Y, Cabassi M, Mayer TS, Novak SW. Structural and electrical properties of trimethylboron-doped silicon nanowires Applied Physics Letters. 85: 3101-3103. DOI: 10.1063/1.1792800  0.632
2004 Dickey EC, Pan L, Lew KK, Redwing JM. Development of doped and heterostructured Si-Ge nanowires Microscopy and Microanalysis. 10: 22-23. DOI: 10.1017/S143192760488574X  0.714
2003 Mohammad AM, Dey S, Lew KK, Redwing JM, Mohney SE. Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598966  0.699
2003 Lew KK, Redwing JM. Growth characteristics of silicon nanowires synthesized by vapor-liquid-solid growth in nanoporous alumina templates Journal of Crystal Growth. 254: 14-22. DOI: 10.1016/S0022-0248(03)01146-1  0.684
2003 Lew KK, Pan L, Dickey EC, Redwing JM. Vapor-Liquid-Solid Growth of Silicon-Germanium Nanowires Advanced Materials. 15: 2073-2076. DOI: 10.1002/Adma.200306035  0.687
2002 Lew KK, Reuther C, Carim AH, Redwing JM, Martin BR. Template-directed vapor-liquid-solid growth of silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 389-392. DOI: 10.1116/1.1430240  0.753
2001 Carim AH, Lew K, Redwing JM. Bicrystalline Silicon Nanowires Advanced Materials. 13: 1489-1491. DOI: 10.1002/1521-4095(200110)13:19<1489::AID-ADMA1489>3.0.CO;2-E  0.499
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