| Year |
Citation |
Score |
| 2009 |
Yang JJ, Xiang H, Ji C, Stickle WF, Stewart DR, Ohlberg DAA, Williams RS, Chang YA. Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface Applied Physics Letters. 95. DOI: 10.1063/1.3272684 |
0.383 |
|
| 2007 |
Lim DK, Lee D, Lee H, Bae SS, Choi J, Kim S, Ji C, Ragan R, Ohlberg DAA, Chang YA, Williams RS. Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100) Nanotechnology. 18. DOI: 10.1088/0957-4484/18/9/095706 |
0.362 |
|
| 2006 |
Yang JJ, Ji C, Chang YA, Ke X, Rzchowski MS. Over 70% tunneling magnetoresistance at room temperature for a CoFe and AlOx based magnetic tunnel junction Applied Physics Letters. 89. DOI: 10.1063/1.2387568 |
0.375 |
|
| 2006 |
Yang JJ, Ji C, Yang Y, Chang YA, Liu FX, Pant BB, Schultz AE. Thickness determination of ultrathin oxide films and its application in magnetic tunnel junctions Journal of Electronic Materials. 35: 2142-2146. DOI: 10.1007/S11664-006-0324-5 |
0.388 |
|
| 2005 |
Yang Y, Chang YA, Yang J, Ji C, Ladwig PF, Liu F, Pant BB, Schultz AE. Thermal stability of the interfaces between Co-, Ni-, and Fe-based ferromagnets in contact with selected nitrides MN (M=Al, B, Nb, Ta, Ti, and V) Journal of Applied Physics. 98. DOI: 10.1063/1.2040002 |
0.336 |
|
| 2005 |
Yang JJ, Ladwig PF, Yang Y, Ji C, Chang YA, Liu FX, Pant BB, Schultz AE. Oxidation of tunnel barrier metals in magnetic tunnel junctions Journal of Applied Physics. 97. DOI: 10.1063/1.1854011 |
0.332 |
|
| 2005 |
Ji C, Ragan R, Kim S, Chang YA, Chen Y, Ohlberg DAA, Williams RS. Surface Reconstruction of Pt/Si(001) Applied Physics a: Materials Science and Processing. 80: 1301-1304. DOI: 10.1007/S00339-004-3150-8 |
0.305 |
|
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