Year |
Citation |
Score |
2022 |
Lee J, Bang J, Kang J. Nonequilibrium Charge-Density-Wave Melting in 1-TaS Triggered by Electronic Excitation: A Real-Time Time-Dependent Density Functional Theory Study. The Journal of Physical Chemistry Letters. 5711-5718. PMID 35713637 DOI: 10.1021/acs.jpclett.2c01352 |
0.633 |
|
2019 |
Lee J, Kang J. Metal-free N2-to-NH3 thermal conversion at the boron-terminated zigzag edges of hexagonal boron nitride: Mechanism and kinetics Journal of Catalysis. 375: 68-73. DOI: 10.1016/J.Jcat.2019.05.018 |
0.303 |
|
2018 |
Kim H, Bang J, Kang J. Robust ferromagnetism in hydrogenated graphene mediated by spin-polarized pseudospin. Scientific Reports. 8: 13940. PMID 30224827 DOI: 10.1038/S41598-018-31934-0 |
0.676 |
|
2017 |
Kang J, Park J, Stradins P, Wei S. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases Physical Review B. 96. DOI: 10.1103/Physrevb.96.045203 |
0.628 |
|
2017 |
Jeong YC, Song SY, Kim HW, Shin H, Kang J, Seo J. Probing Franck–Condon-like Excitations in Anchoring of Phthalocyanine Molecules on Au(111) The Journal of Physical Chemistry C. 121: 17402-17408. DOI: 10.1021/Acs.Jpcc.7B06158 |
0.303 |
|
2016 |
Park JS, Kang J, Yang JH, McMahon WE, Wei SH. Polymerization of defect states at dislocation cores in InAs Journal of Applied Physics. 119. DOI: 10.1063/1.4940743 |
0.643 |
|
2015 |
Park JS, Kang J, Yang JH, Metzger W, Wei SH. Stability and electronic structure of the low-Σ grain boundaries in CdTe: A density functional study New Journal of Physics. 17. DOI: 10.1088/1367-2630/17/1/013027 |
0.637 |
|
2015 |
Huo N, Wei Z, Meng X, Kang J, Wu F, Li SS, Wei SH, Li J. Interlayer coupling and optoelectronic properties of ultrathin two-dimensional heterostructures based on graphene, MoS2 and WS2 Journal of Materials Chemistry C. 3: 5467-5473. DOI: 10.1039/C5Tc00698H |
0.32 |
|
2015 |
Park JS, Huang B, Wei SH, Kang J, McMahon WE. Period-doubling reconstructions of semiconductor partial dislocations Npg Asia Materials. 7. DOI: 10.1038/Am.2015.102 |
0.363 |
|
2014 |
Kim J, Yin WJ, Kang J, Yan Y, Wei SH, Al-Jassim MM. Creating intermediate bands in ZnTe via co-alloying approach Applied Physics Express. 7: 121201. DOI: 10.7567/Apex.7.121201 |
0.349 |
|
2014 |
Yang JH, Park JS, Kang J, Metzger W, Barnes T, Wei SH. Tuning the Fermi level beyond the equilibrium doping limit through quenching: The case of CdTe Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.245202 |
0.644 |
|
2013 |
Kang J, Wei SH. Tunable Anderson localization in hydrogenated graphene based on the electric field effect. Physical Review Letters. 111: 216801. PMID 24313510 DOI: 10.1103/Physrevlett.111.216801 |
0.334 |
|
2013 |
Kang J, Glatzmaier GC, Wei SH. Origin of the bismuth-induced decohesion of nickel and copper grain boundaries. Physical Review Letters. 111: 055502. PMID 23952417 DOI: 10.1103/Physrevlett.111.055502 |
0.325 |
|
2012 |
Kang J, Zhu J, Curtis C, Blake D, Glatzmaier G, Kim YH, Wei SH. Atomically abrupt liquid-oxide interface stabilized by self-regulated interfacial defects: the case of Al/Al2O3 interfaces. Physical Review Letters. 108: 226105. PMID 23003629 DOI: 10.1103/Physrevlett.108.226105 |
0.33 |
|
2012 |
Lee AT, Kang J, Wei S, Chang K, Kim Y. Carrier-mediated long-range ferromagnetism in electron-doped Fe-C4 and Fe-N4 incorporated graphene Physical Review B. 86: 165403-165403. DOI: 10.1103/Physrevb.86.165403 |
0.649 |
|
2012 |
Kang J, Jung YS, Wei SH, Dillon AC. Implications of the formation of small polarons in Li 2O 2 for Li-air batteries Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035210 |
0.311 |
|
2012 |
Zhao Y, Ban C, Kang J, Santhanagopalan S, Kim GH, Wei SH, Dillon AC. P-type doping of lithium peroxide with carbon sheets Applied Physics Letters. 101. DOI: 10.1063/1.4733480 |
0.327 |
|
2012 |
Bak JH, Le V, Kang J, Wei S, Kim Y. First-Principles Study of Electronic Structure and Hydrogen Adsorption of 3d Transition Metal Exposed Paddle Wheel Frameworks Journal of Physical Chemistry C. 116: 7386-7392. DOI: 10.1021/Jp210985A |
0.325 |
|
2011 |
Zhai YT, Chen S, Yang JH, Xiang HJ, Gong XG, Walsh A, Kang J, Wei SH. Structural diversity and electronic properties of Cu2SnX 3 (X=S, Se): A first-principles investigation Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075213 |
0.331 |
|
2009 |
Kim YH, Sun YY, Choi WI, Kang J, Zhang SB. Enhanced dihydrogen adsorption in symmetry-lowered metal-porphyrin-containing frameworks. Physical Chemistry Chemical Physics : Pccp. 11: 11400-3. PMID 20024409 DOI: 10.1039/B913711D |
0.332 |
|
2008 |
Lee W, Kang J, Chang KJ. p-type doping and compensation in ZnO Journal of the Korean Physical Society. 53: 196-201. DOI: 10.3938/Jkps.53.196 |
0.564 |
|
2008 |
Kang Y, Kang J, Chang KJ. Electronic structure of graphene and doping effect onSiO2 Physical Review B. 78. DOI: 10.1103/Physrevb.78.115404 |
0.622 |
|
2008 |
Kang J, Bang J, Ryu B, Chang KJ. Effect of atomic-scale defects on the low-energy electronic structure of graphene: Perturbation theory and local-density-functional calculations Physical Review B. 77. DOI: 10.1103/Physrevb.77.115453 |
0.738 |
|
2008 |
Kang J, Chang KJ. The electronic structure of Ga‐vacancy in Mn‐doped GaN Physica Status Solidi (C). 5: 3035-3037. DOI: 10.1002/Pssc.200779180 |
0.34 |
|
2007 |
Lee W, Kang J, Chang KJ. The Origin of p-Type Conductivity in P-Doped ZnO Journal of the Korean Physical Society. 50: 602-607. DOI: 10.3938/Jkps.50.602 |
0.449 |
|
2007 |
Bang J, Kang J, Lee W, Chang KJ, Kim H. Chemical bonding effect of Ge atoms on B diffusion in Si Physical Review B. 76. DOI: 10.1103/Physrevb.76.064118 |
0.703 |
|
2007 |
Kang J, Chang KJ. The effect of Ga vacancies on the defect and magnetic properties of Mn-doped GaN Journal of Applied Physics. 102: 083910. DOI: 10.1063/1.2799962 |
0.391 |
|
2007 |
Bang J, Kim H, Kang J, Lee W, Chang K. Retardation of boron diffusion in SiGe alloy Physica B-Condensed Matter. 401: 196-199. DOI: 10.1016/J.Physb.2007.08.145 |
0.68 |
|
2007 |
Kang Y, Kang J, Kim Y, Chang KJ. First-principles approach to the electron transport and applications for devices based on carbon nanotubes and ultrathin oxides Computer Physics Communications. 177: 30-33. DOI: 10.1016/J.Cpc.2007.02.031 |
0.594 |
|
2006 |
Choi E, Kang J, Chang KJ. Energetics of cubic and hexagonal phases in Mn-dopedGaN: First-principles pseudopotential calculations Physical Review B. 74. DOI: 10.1103/Physrevb.74.245218 |
0.664 |
|
2006 |
Lee W, Kang J, Chang KJ. Defect properties and p -type doping efficiency in phosphorus-doped ZnO Physical Review B. 73: 24117. DOI: 10.1103/Physrevb.73.024117 |
0.419 |
|
2006 |
Kim DY, Kang J, Chang KJ. Physical origin of threshold voltage problems in polycrystalline silicon/HfO2 gate stacks Applied Physics Letters. 88: 162107. DOI: 10.1063/1.2193054 |
0.351 |
|
2006 |
Lee WJ, Kang J, Chang K. Electronic structure of phosphorus dopants in ZnO Physica B-Condensed Matter. 376: 699-702. DOI: 10.1016/J.Physb.2005.12.175 |
0.396 |
|
2006 |
Kang J, Chang KJ. The electronic and magnetic properties of Mn-doped GaN Physica B-Condensed Matter. 376: 635-638. DOI: 10.1016/J.Physb.2005.12.160 |
0.472 |
|
2005 |
Hong H, Kang Y, Kang J, Lee E, Kim Y, Chang KJ. Effect of chemical bonding on the magnetic stability and magnetic moment in Mn-based binary compounds Physical Review B. 72. DOI: 10.1103/Physrevb.72.144408 |
0.582 |
|
2005 |
Kang J, Chang K, Katayama-Yoshida H. First-principles study of ferromagnetism in Mn-doped GaN Journal of Superconductivity. 18: 55-60. DOI: 10.1007/S10948-005-2150-Z |
0.452 |
|
2004 |
Kang J, Lee E, Chang KJ, Jin Y. H-related defect complexes in HfO2: A model for positive fixed charge defects Applied Physics Letters. 84: 3894-3896. DOI: 10.1063/1.1738946 |
0.317 |
|
2003 |
Kang J, Lee E, Chang KJ. First-principles study of the structural phase transformation of hafnia under pressure Physical Review B. 68. DOI: 10.1103/Physrevb.68.054106 |
0.385 |
|
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