Eugene A. Fitzgerald
Affiliations: | Materials Science and Engineering | Massachusetts Institute of Technology, Cambridge, MA, United States |
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"Eugene Fitzgerald"Parents
Sign in to add mentor| Jerry M. Woodall | research assistant | 1986-1988 | (E-Tree) |
| Dieter G. Ast | grad student | 1985-1988 | (E-Tree) |
Children
Sign in to add trainee| Minjoo Larry Lee | grad student | 1999-2003 | MIT |
| Nathaniel J. Quitoriano | grad student | 2000-2006 | MIT |
| Kunal Mukherjee | grad student | 2009-2014 | MIT |
BETA: Related publications
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Publications
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| Ran S, Glen TS, Li B, et al. (2020) The Limits of Electromechanical Coupling in Highly-Tensile Strained Germanium. Nano Letters |
| Khai LW, Ing NG, Fitzgerald EA, et al. (2020) High-Frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers Ieee Journal of the Electron Devices Society. 8: 122-125 |
| Wang B, Syaranamual GJ, Lee KH, et al. (2020) Effectiveness of InGaAs/GaAs superlattice dislocation filter layers epitaxially grown on 200 mm Si wafers with and without Ge buffers Semiconductor Science and Technology. 35: 95036 |
| Wang J, Heidelberger C, Fitzgerald EA, et al. (2020) Liquid phase epitaxy SiGe films on a CVD-grown SiGe/Si (0 0 1) graded film Journal of Crystal Growth. 535: 125541 |
| Choi P, Antoniadis DA, Fitzgerald EA. (2019) Towards Millimeter-Wave Phased Array Circuits and Systems For Small Form Factor and Power Efficient 5G Mobile Devices Past & Present |
| Zhang L, Lee KH, Kadir A, et al. (2018) Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding Japanese Journal of Applied Physics. 57: 51002 |
| Wang Y, Wang B, Sasangka WA, et al. (2018) High-performance AlGaInP light-emitting diodes integrated on silicon through a superior quality germanium-on-insulator Photonics Research. 6: 290-295 |
| Zhao X, Heidelberger C, Fitzgerald EA, et al. (2018) Sub-10-nm-Diameter InGaAs Vertical Nanowire MOSFETs: Ni Versus Mo Contacts Ieee Transactions On Electron Devices. 65: 3762-3768 |
| Lee KH, Wang Y, Wang B, et al. (2018) Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process Ieee Journal of the Electron Devices Society. 6: 571-578 |
| Loke WK, Lee KH, Wang Y, et al. (2018) MOCVD growth of InGaP/GaAs heterojunction bipolar transistors on 200 mm Si wafers for heterogeneous integration with Si CMOS Semiconductor Science and Technology. 33: 115011 |