Xinming Huang, Ph.D.
Affiliations: | 2001 | Virginia Polytechnic Institute and State University, Blacksburg, VA, United States |
Area:
Electronics and Electrical Engineering, Mechanical EngineeringGoogle:
"Xinming Huang"Parents
Sign in to add mentor| William T. Baumann | grad student | 2001 | Virginia Tech | |
| (Development of reduced -order flame models for prediction of combustion instability.) | ||||
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Publications
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| Hoshikawa T, Huang X, Hoshikawa K, et al. (2008) Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve Japanese Journal of Applied Physics. 47: 8691-8695 |
| Arivanandhan M, Huang X, Uda S, et al. (2008) Directional growth of organic NLO crystal by different growth methods: A comparative study by means of XRD, HRXRD and laser damage threshold Journal of Crystal Growth. 310: 4587-4592 |
| Kimura H, Uda S, Buzanov O, et al. (2008) The effect of growth atmosphere and Ir contamination on electric properties of La3Ta0.5Ga5.5O14 single crystal grown by the floating zone and Czochralski method Journal of Electroceramics. 20: 73-80 |
| Huang X, Baumann WT. (2007) Reduced-order modeling of dynamic heat release for thermoacoustic instability prediction Combustion Science and Technology. 179: 617-636 |
| Huang X, Uda S, Tanabe H, et al. (2007) In situ observations of crystal growth of spherical Si single crystals Journal of Crystal Growth. 307: 341-347 |
| Hoshikawa T, Taishi T, Huang X, et al. (2007) Si multicrystals grown by the Czochralski method with multi-seeds Journal of Crystal Growth. 307: 466-471 |
| Taishi T, Hoshikawa T, Yamatani M, et al. (2007) Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime Journal of Crystal Growth. 306: 452-457 |
| Huang X, Hoshikawa T, Uda S. (2007) Analysis of the reaction at the interface between Si melt and Ba-doped silica glass Journal of Crystal Growth. 306: 422-427 |
| Huang X, Wu K, Chen M, et al. (2006) Temperature dependence of Raman scattering in Si crystals with heavy B and/or Ge doping Materials Science in Semiconductor Processing. 9: 257-260 |
| Koh S, Uda S, Nishida M, et al. (2006) Study of the mechanism of crystallization electromotive force during growth of congruent LiNbO3 using a micro-pulling-down method Journal of Crystal Growth. 297: 247-258 |