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Yoontae Hwang, Ph.D.

Affiliations: 
2011 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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Susanne Stemmer grad student 2011 UC Santa Barbara
 (High dielectric constant gate oxides for III-V CMOS.)

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Publications

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Dai X, Nguyen B, Hwang Y, et al. (2014) Novel Heterogeneous Integration Technology of III–V Layers and InGaAs FinFETs to Silicon Advanced Functional Materials. 24: 4420-4426
Hwang Y, Nguyen B, Dayeh SA. (2013) Atomic layer deposition of platinum with enhanced nucleation and coalescence by trimethylaluminum pre-pulsing Applied Physics Letters. 103: 263115
Burek GJ, Hwang Y, Carter AD, et al. (2011) Influence of gate metallization processes on the electrical characteristics of high-k/In 0.53Ga0.47 As interfaces Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29
Hwang Y, Chobpattana V, Zhang JY, et al. (2011) Al-doped HfO2/In0.53Ga0.47 As metal-oxide-semiconductor capacitors Applied Physics Letters. 98
Hwang Y, Engel-Herbert R, Stemmer S. (2011) Influence of trimethylaluminum on the growth and properties of HfO 2 / In0.53 Ga0.47 As interfaces Applied Physics Letters. 98
Engel-Herbert R, Hwang Y, Stemmer S. (2010) Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces Journal of Applied Physics. 108
Engel-Herbert R, Hwang Y, Stemmer S. (2010) Quantification of trap densities at dielectric/III-V semiconductor interfaces Applied Physics Letters. 97
Hwang Y, Engel-Herbert R, Rudawski NG, et al. (2010) Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks Journal of Applied Physics. 108
Hwang Y, Engel-Herbert R, Rudawski NG, et al. (2010) Analysis of trap state densities at HfO2/In0.53 Ga0.47 As interfaces Applied Physics Letters. 96
Engel-Herbert R, Hwang Y, LeBeau JM, et al. (2009) Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As Materials Research Society Symposium Proceedings. 1155: 111-117
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