Zhongda Li, Ph.D.

Affiliations: 
2013 Electrical Engineering Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics
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"Zhongda Li"

Parents

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Tat-Sing P. Chow grad student 2013 RPI
 (High-voltage gallium nitride mos-channel hemts.)
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Publications

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Aiexandrov P, Bhalla A, Li Z, et al. (2016) 650V SiC cascode: A breakthrough for wide-bandgap switches Materials Science Forum. 897: 673-676
Li Z, Waldron J, Chowdhury S, et al. (2015) High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal Physica Status Solidi (a) Applications and Materials Science. 212: 1110-1115
Takashima S, Li Z, Chow TP. (2013) Metal-oxide-semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN Japanese Journal of Applied Physics. 52
Li Z, Pala V, Chow TP. (2013) Avalanche breakdown design parameters in GaN Japanese Journal of Applied Physics. 52
Takashima S, Li Z, Chow TP. (2013) Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-Channel-HEMTs Ieee Transactions On Electron Devices. 60: 3025-3031
Li Z, Chow TP. (2013) Design and simulation of 5-20-kV GaN enhancement-mode vertical superjunction HEMT Ieee Transactions On Electron Devices. 60: 3230-3237
Li Z, Waldron J, Detchprohm T, et al. (2013) Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate Applied Physics Letters. 102
Naik H, Li Z, Issa H, et al. (2012) Study of high temperature microwave annealing on the performance of 4H-SiC MOS capacitors Materials Science Forum. 717: 769-772
Marron T, Takashima S, Li Z, et al. (2012) Impact of annealing on ALD Al 2O 3 gate dielectric for GaN MOS devices Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 907-910
Li Z, Zhang J, Chow TP. (2012) Study of CF 4 plasma treatment in drift region optimization of high-voltage GaN MOSC-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 861-863
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