Zhongda Li, Ph.D.
Affiliations: | 2013 | Electrical Engineering | Rensselaer Polytechnic Institute, Troy, NY, United States |
Area:
Electronics and Electrical Engineering, Condensed Matter PhysicsGoogle:
"Zhongda Li"Parents
Sign in to add mentorTat-Sing P. Chow | grad student | 2013 | RPI | |
(High-voltage gallium nitride mos-channel hemts.) |
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Publications
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Aiexandrov P, Bhalla A, Li Z, et al. (2016) 650V SiC cascode: A breakthrough for wide-bandgap switches Materials Science Forum. 897: 673-676 |
Li Z, Waldron J, Chowdhury S, et al. (2015) High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal Physica Status Solidi (a) Applications and Materials Science. 212: 1110-1115 |
Takashima S, Li Z, Chow TP. (2013) Metal-oxide-semiconductor interface and dielectric properties of atomic layer deposited SiO2 on GaN Japanese Journal of Applied Physics. 52 |
Li Z, Pala V, Chow TP. (2013) Avalanche breakdown design parameters in GaN Japanese Journal of Applied Physics. 52 |
Takashima S, Li Z, Chow TP. (2013) Sidewall dominated characteristics on fin-gate AlGaN/GaN MOS-Channel-HEMTs Ieee Transactions On Electron Devices. 60: 3025-3031 |
Li Z, Chow TP. (2013) Design and simulation of 5-20-kV GaN enhancement-mode vertical superjunction HEMT Ieee Transactions On Electron Devices. 60: 3230-3237 |
Li Z, Waldron J, Detchprohm T, et al. (2013) Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate Applied Physics Letters. 102 |
Naik H, Li Z, Issa H, et al. (2012) Study of high temperature microwave annealing on the performance of 4H-SiC MOS capacitors Materials Science Forum. 717: 769-772 |
Marron T, Takashima S, Li Z, et al. (2012) Impact of annealing on ALD Al 2O 3 gate dielectric for GaN MOS devices Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 907-910 |
Li Z, Zhang J, Chow TP. (2012) Study of CF 4 plasma treatment in drift region optimization of high-voltage GaN MOSC-HEMTs Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 861-863 |