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Amitabh Chatterjee, Ph.D. - Publications

Affiliations: 
2011 Electrical & Computer Engineering University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Computer Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Sinha DK, Ansari MS, Ray A, Trivedi G, Chatterjee A, Schrimpf RD. Fast Ionization-Front-Induced Anomalous Switching Behavior in Trigger Bipolar Transistors of Marx-Bank Circuits Under Base-Drive Conditions Ieee Transactions On Plasma Science. 46: 2064-2071. DOI: 10.1109/Tps.2018.2835465  0.406
2017 Roy S, Chatterjee A, Sinha DK, Pirogova R, Baishya S. 2-D Analytical Modeling of Surface Potential and Threshold Voltage for Vertical Super-Thin Body FET Ieee Transactions On Electron Devices. 64: 2106-2112. DOI: 10.1109/Ted.2017.2687465  0.347
2017 Prajapati J, Bharadwaj M, Chatterjee A, Bhattacharjee R. Circuit modeling and performance analysis of photoconductive antenna Optics Communications. 394: 69-79. DOI: 10.1016/J.Optcom.2017.03.004  0.363
2017 Sinha DK, Chatterjee A. SPICE level implementation of physics of filamentation in ESD protection devices Microelectronics Reliability. 79: 239-247. DOI: 10.1016/J.Microrel.2017.05.022  0.359
2016 Sinha DK, Chatterjee A, Schrimpf RD. Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures under Dynamic Avalanche Conditions Ieee Transactions On Electron Devices. 63: 3185-3192. DOI: 10.1109/Ted.2016.2584102  0.388
2011 Chatterjee A, Shrivastava M, Gossner H, Pendharkar S, Brewer F, Duvvury C. An insight into ESD behavior of nanometer-scale drain extended NMOS (DeNMOS) devices: Part II (two-dimensional study-biasing & comparison with NMOS) Ieee Transactions On Electron Devices. 58: 318-326. DOI: 10.1109/Ted.2010.2093011  0.558
2011 Chatterjee A, Shrivastava M, Gossner H, Pendharkar S, Brewer F, Duvvury C. An insight into the ESD behavior of the nanometer-scale drain-extended NMOS device - Part I: Turn-on behavior of the parasitic bipolar Ieee Transactions On Electron Devices. 58: 309-317. DOI: 10.1109/Ted.2010.2093010  0.559
2005 Chatterjee A, Schrimpf RD, Pendharkar S, Banerjee K. Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted Journal of Applied Physics. 97. DOI: 10.1063/1.1874294  0.396
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