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Benjamin A. Haskell, Ph.D. - Publications

Affiliations: 
2005 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Electronics & Photonics
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48 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Imer B, Haskell B, Rajan S, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Electrical characterization of low defect density nonpolar (1120) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) Journal of Materials Research. 23: 551-555. DOI: 10.1557/Jmr.2008.0069  0.776
2008 Law JJM, Yu ET, Haskell BA, Fini PT, Nakamura S, Speck JS, Denbaars SP. Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy Journal of Applied Physics. 103. DOI: 10.1063/1.2828161  0.636
2008 Barabash RI, Ice GE, Haskell BA, Nakamura S, Speck JS, Liu W. White X-ray microdiffraction analysis of defects, strain and tilts in a free standing GaN film Physica Status Solidi (B) Basic Research. 245: 899-902. DOI: 10.1002/Pssb.200778579  0.442
2008 Imer B, Schmidt M, Haskell B, Rajan S, Zhong B, Kim K, Wu F, Mates T, Keller S, Mishra UK, Nakamura S, Speck JS, DenBaars SP. Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) Physica Status Solidi (a) Applications and Materials Science. 205: 1705-1712. DOI: 10.1002/Pssa.200723403  0.793
2008 Haskell BA, Fini PT, Nakamura S. Growth of Planar and Reduced-defect Density Nonpolar GaN Films by Hydride Vapor Phase Epitaxy Nitrides With Nonpolar Surfaces: Growth, Properties, and Devices. 31-51. DOI: 10.1002/9783527623150.ch2  0.657
2007 Chakraborty A, Haskell BA, Wu F, Keller S, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Structural and optical properties of nonpolar InGaN/GaN multiple quantum wells grown on planar and lateral epitaxially overgrown m-plane GaN films Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 542-546. DOI: 10.1143/Jjap.46.542  0.51
2007 Onuma T, Koyama T, Chakraborty A, McLaurin M, Haskell BA, Fini PT, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Radiative and nonradiative lifetimes in nonpolar m -plane Inx Ga1-x NGaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1524-1528. DOI: 10.1116/1.2746354  0.718
2007 Darakchieva V, Paskova T, Schubert M, Arwin H, Paskov PP, Monemar B, Hommel D, Heuken M, Off J, Scholz F, Haskell BA, Fini PT, Speck JS, Nakamura S. Anisotropic strain and phonon deformation potentials in GaN Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.195217  0.605
2007 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques Philosophical Magazine. 87: 2019-2039. DOI: 10.1080/14786430701241689  0.69
2007 Kröger R, Paskova T, Rosenauer A, Hommel D, Monemar B, Fini P, Haskell B, Speck J, Nakamura S. On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxy Aip Conference Proceedings. 893: 341-342. DOI: 10.1063/1.2729907  0.643
2007 Rudin S, Garrett GA, Shen H, Wraback M, Imer B, Haskell B, Speck JS, Keller S, Nakamura S, DenBaars SP. Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells Aip Conference Proceedings. 893: 315-316. DOI: 10.1063/1.2729894  0.76
2007 Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126  0.647
2007 Darakchieva V, Paskova T, Schubert M, Paskov PP, Arwin H, Monemar B, Hommel D, Heuken M, Off J, Haskell BA, Fini PT, Speck JS, Nakamura S. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers Journal of Crystal Growth. 300: 233-238. DOI: 10.1016/J.Jcrysgro.2006.11.023  0.677
2007 Haskell BA, Nakamura S, DenBaars SP, Speck JS. Progress in the growth of nonpolar gallium nitride Physica Status Solidi (B) Basic Research. 244: 2847-2858. DOI: 10.1002/Pssb.200675625  0.483
2006 Chichibu SF, Uedono A, Onuma T, Haskell BA, Chakraborty A, Koyama T, Fini PT, Keller S, Denbaars SP, Speck JS, Mishra UK, Nakamura S, Yamaguchi S, Kamiyama S, Amano H, et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nature Materials. 5: 810-6. PMID 16951678 DOI: 10.1038/Nmat1726  0.725
2006 Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02  0.718
2006 Baker TJ, Haskell BA, Wu F, Speck JS, Nakamura S. Characterization of planar semipolar gallium nitride films on sapphire substrates Japanese Journal of Applied Physics, Part 2: Letters. 45: L154-L157. DOI: 10.1143/JJAP.45.L154  0.415
2006 Chakraborty A, Kim KC, Wu F, Haskell BA, Keller S, Speck JS, Nakamura S, Denbaars SP, Mishra UK. Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-plane GaN Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 8659-8661. DOI: 10.1143/Jjap.45.8659  0.461
2006 Chakraborty A, Haskell BA, Masui H, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 45: 739-741. DOI: 10.1143/Jjap.45.739  0.677
2006 Paskova T, Kroeger R, Paskov PP, Figge S, Hommel D, Monemar B, Haskell B, Fini P, Speck JS, Nakamura S. Microscopic emission properties of nonpolar a-plane GaN grown by HVPE Proceedings of Spie - the International Society For Optical Engineering. 6121. DOI: 10.1117/12.645672  0.63
2006 Roder C, Einfeldt S, Figge S, Paskova T, Hommel D, Paskov PP, Monemar B, Behn U, Haskell BA, Fini PT, Nakamura S. Stress and wafer bending of a -plane GaN layers on r -plane sapphire substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2386940  0.654
2006 Koyama T, Onuma T, Masui H, Chakraborty A, Haskell BA, Keller S, Mishra UK, Speck JS, Nakamura S, DenBaars SP, Sota T, Chichibu SF. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane inxGa1-xN/GaN blue light emitting diodes fabricated on freestanding GaN substrates Applied Physics Letters. 89. DOI: 10.1063/1.2337085  0.72
2006 Paskov PP, Paskova T, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S. Optical properties of nonpolar a-plane GaN layers Superlattices and Microstructures. 40: 253-261. DOI: 10.1016/J.Spmi.2006.06.014  0.676
2006 Kamber DS, Wu Y, Haskell BA, Newman S, DenBaars SP, Speck JS, Nakamura S. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy Journal of Crystal Growth. 297: 321-325. DOI: 10.1016/J.Jcrysgro.2006.10.097  0.461
2006 Onuma T, Chakraborty A, Haskell BA, Keller S, Sota T, Mishra UK, DenBaars SP, Speck JS, Nakamura S, Chichibu SF. Exciton dynamics in nonpolar (112̄0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 2082-2086. DOI: 10.1002/Pssc.200565444  0.466
2006 Paskov PP, Schifano R, Malinauskas T, Paskova T, Bergman JP, Monemar B, Figge S, Hommel D, Haskell BA, Fini PT, Speck JS, Nakamura S. Photoluminescence of a-plane GaN: Comparison between MOCVD and HVPE grown layers Physica Status Solidi (C) Current Topics in Solid State Physics. 3: 1499-1502. DOI: 10.1002/Pssc.200565416  0.678
2006 Darakchieva V, Paskova T, Paskov PP, Arwin H, Schubert M, Monemar B, Figge S, Homme D, Haskell BA, Fini PT, Nakamura S. Assessment of phonon mode characteristics via infrared spectroscopic ellipsometry on a-plane GaN Physica Status Solidi (B) Basic Research. 243: 1594-1598. DOI: 10.1002/Pssb.200565400  0.624
2006 Roder C, Einfeldt S, Figge S, Hommel D, Paskova T, Monemar B, Haskell BA, Fini PT, Speck JS, Nakamura S. Strain in a-plane GaN layers grown on r-plane sapphire substrates Physica Status Solidi (a) Applications and Materials Science. 203: 1672-1675. DOI: 10.1002/Pssa.200565447  0.652
2005 Hashimoto T, Fujito K, Wu F, Haskell BA, Fini PT, Speck JS, Nakamura S. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia Materials Research Society Symposium Proceedings. 831: 81-86. DOI: 10.1557/Proc-831-E2.8  0.666
2005 Chakraborty A, Baker TJ, Haskell BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates Japanese Journal of Applied Physics, Part 2: Letters. 44: L945-L947. DOI: 10.1143/Jjap.44.L945  0.46
2005 Baker TJ, Haskell BA, Wu F, Fini PT, Speck JS, Nakamura S. Characterization of planar semipolar gallium nitride films on spinel substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L920-L922. DOI: 10.1143/Jjap.44.L920  0.703
2005 Hashimoto T, Fujito K, Feng WU, Haskell BA, Fini PT, Speck JS, Nakamura S. Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia Japanese Journal of Applied Physics, Part 2: Letters. 44: L797-L799. DOI: 10.1143/Jjap.44.L797  0.685
2005 Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L173-L175. DOI: 10.1143/Jjap.44.L173  0.434
2005 Masui H, Chakraborty A, Haskell BA, Mishra UK, Speck JS, Nakamura S, DenBaars SP. Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate Japanese Journal of Applied Physics, Part 2: Letters. 44: L1329-L1332. DOI: 10.1143/Jjap.44.L1329  0.703
2005 Sharma R, Pattison PM, Masui H, Farrell RM, Baker TJ, Haskell BA, Wu F, Denbaars SP, Speck JS, Nakamura S. Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139841  0.697
2005 Onuma T, Chakraborty A, Haskell BA, Keller S, Denbaars SP, Speck JS, Nakamura S, Mishra UK, Sota T, Chichibu SF. Localized exciton dynamics in nonpolar (11 2- 0) InxGa 1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1900947  0.471
2005 Haskell BA, Baker TJ, McLaurin MB, Wu F, Fini PT, Denbaars SP, Speck JS, Nakamura S. Defect reduction in (11̄00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1866225  0.675
2005 Chichibu SF, Uedono A, Onuma T, Sota T, Haskell BA, Denbaars SP, Speck JS, Nakamura S. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques Applied Physics Letters. 86: 021914-1-021914-3. DOI: 10.1063/1.1851619  0.447
2005 Chakraborty A, Keller S, Meier C, Haskell BA, Waltereit P, DenBaars SP, Nakamura S, Speck JS, Mishra UK. Properties of nonpolar a -plane InGaNGaN multiple quantum wells grown on lateral epitaxially overgrown a -plane GaN Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1851007  0.545
2005 Hashimoto T, Fujito K, Haskell BA, Fini PT, Speck JS, Nakamura S. Growth of gallium nitride via fluid transport in supercritical ammonia Journal of Crystal Growth. 275: e525-e530. DOI: 10.1016/J.Jcrysgro.2004.11.024  0.655
2005 Haskell BA, Chakraborty A, Wu F, Sasano H, Fini PT, Denbaars SP, Speck JS, Nakamura S. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy Journal of Electronic Materials. 34: 357-360. DOI: 10.1007/S11664-005-0110-9  0.7
2005 Chichibu SF, Koida T, Craven MD, Haskell BA, Onuma T, Sota T, Speck JS, DenBaars SP, Nakamura S. Reduction of bound-state and nonradiative defect densities in nonpolar (1120) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique Physica Status Solidi C: Conferences. 2: 2700-2703. DOI: 10.1002/Pssc.200461423  0.749
2005 Garrett GA, Shen H, Wraback M, Imer B, Haskell B, Speck JS, Keller S, Nakamura S, Denbaars SP. Intensity dependent time-resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a-plane and planar c-plane GaN Physica Status Solidi (a) Applications and Materials Science. 202: 846-849. DOI: 10.1002/Pssa.200461599  0.779
2004 Chakraborty A, Haskell BA, Keller S, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak Applied Physics Letters. 85: 5143-5145. DOI: 10.1063/1.1825612  0.492
2004 McLaurin M, Haskell B, Nakamura S, Speck JS. Gallium adsorption onto (112̄0) gallium nitride surfaces Journal of Applied Physics. 96: 327-334. DOI: 10.1063/1.1759086  0.427
2004 Koida T, Chichibu SF, Sota T, Craven MD, Haskell BA, Speck JS, DenBaars SP, Nakamura S. Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth Applied Physics Letters. 84: 3768-3770. DOI: 10.1063/1.1738185  0.723
2003 Haskell BA, Wu F, Craven MD, Matsuda S, Fini PT, Fujii T, Fujito K, DenBaars SP, Speck JS, Nakamura S. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy Applied Physics Letters. 83: 644-646. DOI: 10.1063/1.1866225  0.783
2003 Haskell BA, Wu F, Matsuda S, Craven MD, Fini PT, DenBaars SP, Speck JS, Nakamura S. Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy Applied Physics Letters. 83: 1554-1556. DOI: 10.1063/1.1604174  0.756
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